Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4506AF
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional
tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE
= 0 V
-
1500
V
V
CEO
Collector-emitter voltage (open base)
-
800
V
I
C
Collector current (DC)
-
5
A
I
CM
Collector current peak value
-
8
A
P
tot
Total power dissipation
T
hs
25 C
-
45
W
V
CEsat
Collector-emitter saturation voltage
I
C
= 3 A; I
B
= 0.75 A
-
3.0
V
I
Csat
Collector saturation current
f = 16 kHz
3.0
-
A
t
f
Fall time
I
Csat
= 3.0 A;f = 16 kHz
300
450
ns
PINNING - SOT199
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE
= 0 V
-
1500
V
V
CEO
Collector-emitter voltage (open base)
-
800
V
I
C
Collector current (DC)
-
5
A
I
CM
Collector current peak value
-
8
A
I
B
Base current (DC)
-
3
A
I
BM
Base current peak value
-
5
A
-I
BM
Reverse base current peak value
1
-
4
A
P
tot
Total power dissipation
T
hs
25 C
-
45
W
T
stg
Storage temperature
-65
150
C
T
j
Junction temperature
-
150
C
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-hs
Junction to heatsink
with heatsink compound
-
2.8
K/W
R
th j-a
Junction to ambient
in free air
32
-
K/W
1
2
3
case
b
c
e
1 Turn-off current.
July 1999
1
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4506AF
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
Repetitive peak voltage from all
R.H.
65 % ; clean and dustfree
-
-
2500
V
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
-
22
-
pF
heatsink
STATIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES
Collector cut-off current
2
V
BE
= 0 V; V
CE
= V
CESMmax
-
-
1.0
mA
I
CES
V
BE
= 0 V; V
CE
= V
CESMmax
;
-
-
2.0
mA
T
j
= 125 C
BV
EBO
Emitter-base breakdown voltage
I
B
= 1 mA
7.5
13.5
-
V
V
CEOsust
Collector-emitter sustaining voltage
I
B
= 0 A; I
C
= 100 mA;
800
-
-
V
L = 25 mH
V
CEsat
Collector-emitter saturation voltage
I
C
= 3.0 A; I
B
= 0.75 A
-
-
3.0
V
V
BEsat
Base-emitter saturation voltage
I
C
= 3.0 A; I
B
= 0.75 A
0.8
0.89
0.98
V
h
FE
DC current gain
I
C
= 0.5 A; V
CE
= 5 V
-
10
-
h
FE
I
C
= 3 A; V
CE
= 5 V
4.2
5.5
7.3
DYNAMIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Switching times (16kHz line
I
Csat
= 3.0 A; I
B1
= 0.6 A; (I
B2
= -1.5 A)
deflection circuit)
t
s
Turn-off storage time
3.7
4.6
s
t
f
Turn-off fall time
300
450
ns
Fig.1. Test circuit for V
CEOsust
.
Fig.2. Oscilloscope display for V
CEOsust
.
+ 50v
100-200R
Horizontal
Vertical
Oscilloscope
1R
6V
30-60 Hz
100R
VCE / V
min
VCEOsust
IC / mA
100
200
250
0
2 Measured with half sine-wave voltage (curve tracer).
July 1999
2
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4506AF
Fig.3. Switching times waveforms (16 kHz).
Fig.4. Switching times definitions.
Fig.5. Switching times test circuit.
Fig.6. High and low DC current gain.
Fig.7. High and low DC current gain.
Fig.8. Typical collector-emitter saturation voltage.
IC
IB
VCE
ICsat
IB1
64us
26us
20us
t
t
t
TRANSISTOR
DIODE
IB2
0.01
0.1
1
10
1
10
100
hFE
IC / A
VCE = 1 V
Ths = 25 C
Ths = 85 C
ICsat
90 %
10 %
tf
ts
IB1
IC
IB
t
t
- IB2
0.01
0.1
1
10
1
10
100
VCE = 5 V
hFE
IC / A
Ths = 25 C
Ths = 85 C
+ 150 v nominal
adjust for ICsat
Lc
Cfb
T.U.T.
LB
IBend
-VBB
0.1
1
10
0
0.2
0.4
0.6
0.8
1
IC / A
VCESAT / V
Ths = 25 C
Ths = 85 C
July 1999
3
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4506AF
Fig.9. Typical base-emitter saturation voltage.
Fig.10. Typical collector storage and fall time.
I
C
=3 A; T
j
= 85C; f = 16kHz
Fig.11. Normalised power dissipation.
PD% = 100
P
D
/P
D 25C
Fig.12. Transient thermal impedance.
0
1
2
3
4
0.6
0.7
0.8
0.9
1
1.1
1.2
VBESAT / V
IB / A
IC = 3 A
Ths = 25 C
Ths = 85 C
0
20
40
60
80
100
120
140
Ths / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
0
0.5
1
1.5
2
0
2
4
6
8
10
IB / A
ts/tf/ us
ICsat = 3 A
Ths = 85 C
Freq = 16 kHz
0.001
0.01
0.1
1
10
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00 1E+01
t / s
`
D = 0.5
0.2
0.1
0.05
0.02
D = 0
tp
D = tp/T
T
P
t
D
BU4506DF/DX
Zth (K/W)
July 1999
4
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4506AF
MECHANICAL DATA
Dimensions in mm
Net Mass: 5.5 g
Fig.13. SOT199; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
6.2
5.8
3.5
21.5
max
15.7
min
1
2
3
2.1 max
1.2
1.0
0.4
2.0
0.7 max
45
o
3.2
5.2 max
3.1
3.3
7.3
15.3 max
0.7
5.45
seating
plane
5.45
3.5 max
not tinned
M
July 1999
5
Rev 1.000
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