Philips Semiconductors
Product specification
Rectifier diodes
BYW29EB, BYW29ED series
ultrafast, rugged
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
V
R
= 150 V/ 200 V
Fast switching
Soft recovery characteristic
V
F
0.895 V
Reverse surge capability
High thermal cycling performance
I
F(AV)
= 8 A
Low thermal resistance
I
RRM
= 0.2 A
t
rr
25 ns
GENERAL DESCRIPTION
Ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies.
The BYW29EB series is supplied in the SOT404 surface mounting package.
The BYW29ED series is supplied in the SOT428 surface mounting package.
PINNING
SOT404
SOT428
PIN
DESCRIPTION
1
no connection
2
cathode
1
3
anode
tab
cathode
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
BYW29EB/ BYW29ED
-150
-200
V
RRM
Peak repetitive reverse
-
150
200
V
voltage
V
RWM
Working peak reverse
-
150
200
V
voltage
V
R
Continuous reverse voltage
-
150
200
V
I
F(AV)
Average rectified forward
square wave;
= 0.5; T
mb
128 C
-
8
A
current
I
FRM
Repetitive peak forward
square wave;
= 0.5; T
mb
128 C
-
16
A
current
I
FSM
Non-repetitive peak forward
t = 10 ms
-
80
A
current
t = 8.3 ms
-
88
A
sinusoidal; with reapplied V
RRM(max)
I
RRM
Peak repetitive reverse
t
p
= 2
s;
= 0.001
-
0.2
A
surge current
I
RSM
Peak non-repetitive reverse
t
p
= 100
s
-
0.2
A
surge current
T
j
Operating junction
-
150
C
temperature
T
stg
Storage temperature
- 40
150
C
1. It is not possible to make connection to pin 2 of the SOT428 or SOT404 packages.
k
a
tab
3
1
2
3
tab
1
3
tab
2
November 1998
1
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
BYW29EB, BYW29ED series
ultrafast, rugged
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge
Human body model;
-
8
kV
capacitor voltage
C = 250 pF; R = 1.5 k
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction
-
-
2.7
K/W
to mounting base
R
th j-a
Thermal resistance junction
SOT404 and SOT428 packages, pcb
-
50
-
K/W
to ambient
mounted, minimum footprint, FR4 board
ELECTRICAL CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
V
F
Forward voltage
I
F
= 8 A; T
j
= 150C
-
0.8
0.895
V
I
F
= 8 A
-
0.92
1.05
V
I
F
= 20 A
-
1.1
1.3
V
I
R
Reverse current
V
R
= V
RWM
-
2
10
A
V
R
= V
RWM
; T
j
= 100C
-
0.2
0.6
mA
Q
rr
Reverse recovered charge
I
F
= 2 A; V
R
30 V; -dI
F
/dt = 20 A/
s
-
4
11
nC
t
rr1
Reverse recovery time
I
F
= 1 A; V
R
30 V; -dI
F
/dt = 100 A/
s
20
25
ns
t
rr2
Reverse recovery time
I
F
= 0.5 A to I
R
= 1 A; I
rec
= 0.25 A
-
15
20
ns
V
fr
Forward recovery voltage
I
F
= 1 A; dI
F
/dt = 10 A/
s
-
1
-
V
November 1998
2
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
BYW29EB, BYW29ED series
ultrafast, rugged
Fig.1. Definition of t
rr1
, Q
s
and I
rrm
Fig.2. Definition of V
fr
Fig.3. Circuit schematic for t
rr2
Fig.4. Definition of t
rr2
Fig.5. Maximum forward dissipation P
F
= f(I
F(AV)
);
square current waveform where I
F(AV)
=I
F(RMS)
x
D.
Fig.6. Maximum forward dissipation P
F
= f(I
F(AV)
);
sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Q
s
100%
10%
time
dI
dt
F
I
R
I
F
I
rrm
t
rr
I = 1A
R
rec
I
= 0.25A
0A
trr2
0.5A
IF
IR
time
time
V F
V
fr
V F
I
F
0
2
4
6
8
10
12
0
2
4
6
8
10
12
D = 1.0
0.5
0.2
0.1
BYW29
IF(AV) / A
PF / W
D =
t
p
t
p
T
T
t
I
Tmb(max) / C
150
143
136
129
122
115
108
Vo = 0.791 V
Rs = 0.013 Ohms
shunt
Current
to 'scope
D.U.T.
Voltage Pulse Source
R
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
a = 1.57
1.9
2.2
2.8
4
BYW29
IF(AV) / A
PF / W
Tmb(max) / C
150
146.5
143
139.5
136
132.5
129
125.5
122
Vo = 0.791 V
Rs = 0.013 Ohms
November 1998
3
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
BYW29EB, BYW29ED series
ultrafast, rugged
Fig.7. Maximum t
rr
at T
j
= 25 C.
Fig.8. Maximum I
rrm
at T
j
= 25 C.
Fig.9. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.10. Maximum Q
s
at T
j
= 25 C.
Fig.11. Transient thermal impedance; Z
th j-mb
= f(t
p
).
1
10
trr / ns
1
10
100
1000
100
dIF/dt (A/us)
IF=1A
IF=10A
10
1.0
1.0
10
100
-dIF/dt (A/us)
Qs / nC
IF=10A
5A
2A
1A
100
10
1
0.1
0.01
Irrm / A
1
10
100
-dIF/dt (A/us)
IF=1A
IF=10A
1us
10us
100us
1ms
10ms
100ms
1s
10s
0.001
0.01
0.1
1
10
PBYL1025
pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W)
D =
t
p
t
p
T
T
P
t
D
0
1
2
30
20
10
0
typ
max
IF / A
0.5
1.5
VF / V
Tj=150 C
Tj=25 C
BYW29
November 1998
4
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
BYW29EB, BYW29ED series
ultrafast, rugged
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.4 g
Fig.12. SOT404 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
Fig.13. SOT404 : soldering pattern for surface mounting.
Notes
1. Epoxy meets UL94 V0 at 1/8".
11 max
4.5 max
1.4 max
10.3 max
0.5
15.4
2.5
0.85 max
(x2)
2.54 (x2)
17.5
11.5
9.0
5.08
3.8
2.0
November 1998
5
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
BYW29EB, BYW29ED series
ultrafast, rugged
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.1 g
Fig.14. SOT428 : centre pin connected to tab.
MOUNTING INSTRUCTIONS
Dimensions in mm
Fig.15. SOT428 : minimum pad sizes for surface mounting.
Notes
1. Plastic meets UL94 V0 at 1/8".
6.22 max
2.38 max
0.93 max
6.73 max
0.3
10.4 max
0.5
0.8 max
(x2)
2.285 (x2)
0.5
seating plane
1.1
0.5 min
5.4
4 min
4.6
1
2
3
tab
7.0
7.0
2.15
2.5
4.57
1.5
November 1998
6
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
BYW29EB, BYW29ED series
ultrafast, rugged
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
November 1998
7
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
BYW29EB, BYW29ED series
ultrafast, rugged
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
November 1998
8
Rev 1.300
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