Philips Semiconductors
Product specification
Rectifier diodes
BYW29EX series
ultrafast, rugged
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass
passivated
epitaxial
rectifier
SYMBOL
PARAMETER
MAX.
MAX.
UNIT
diodes in a full pack plastic envelope,
featuring low forward voltage drop,
BYW29EX-
150
200
ultra-fast recovery times, soft recovery
V
RRM
Repetitive peak reverse
150
200
V
characteristic and guaranteed reverse
voltage
surge and ESD capability. They are
V
F
Forward voltage
0.895
0.895
V
intended for use in switched mode power
I
F(AV)
Forward current
8
8
A
supplies and high frequency circuits in
t
rr
Reverse recovery time
25
25
ns
general where low conduction and
I
RRM
Repetitive peak reverse
0.2
0.2
A
switching losses are essential.
current
PINNING - SOD113
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
cathode
2
anode
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-150
-200
V
RRM
Repetitive peak reverse voltage
-
150
200
V
V
RWM
Crest working reverse voltage
-
150
200
V
V
R
Continuous reverse voltage
-
150
200
V
I
F(AV)
Average forward current
1
square wave;
= 0.5;
T
hs
106 C
-
8
A
sinusoidal; a = 1.57;
T
hs
109 C
-
7.3
A
I
F(RMS)
RMS forward current
-
11.3
A
I
FRM
Repetitive peak forward current t = 25
s;
= 0.5;
-
16
A
T
hs
106 C
I
FSM
Non-repetitive peak forward
t = 10 ms
-
80
A
current
t = 8.3 ms
-
88
A
sinusoidal; with reapplied
V
RWM(max)
I
2
t
I
2
t for fusing
t = 10 ms
-
32
A
2
s
I
RRM
Repetitive peak reverse current t
p
= 2
s;
= 0.001
-
0.2
A
I
RSM
Non-repetitive peak reverse
t
p
= 100
s
-
0.2
A
current
T
stg
Storage temperature
-40
150
C
T
j
Operating junction temperature
-
150
C
1
2
case
k
a
1
2
1 Neglecting switching and reverse current losses
October 1998
1
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
BYW29EX series
ultrafast, rugged
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge
Human body model;
-
8
kV
capacitor voltage
C = 250 pF; R = 1.5 k
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
R.M.S. isolation voltage from
f = 50-60 Hz; sinusoidal
-
2500
V
both terminals to external
waveform;
heatsink
R.H.
65% ; clean and dustfree
C
isol
Capacitance from both terminals f = 1 MHz
-
10
-
pF
to external heatsink
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-hs
Thermal resistance junction to
with heatsink compound
-
-
5.5
K/W
heatsink
without heatsink compound
-
-
7.2
K/W
R
th j-a
Thermal resistance junction to
in free air
-
55
-
K/W
ambient
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
Forward voltage
I
F
= 8 A; T
j
= 150C
-
0.80
0.895
V
I
F
= 8 A
-
0.92
1.05
V
I
F
= 20 A
-
1.1
1.3
V
I
R
Reverse current
V
R
= V
RWM
; T
j
= 100 C
-
0.2
0.6
mA
V
R
= V
RWM
-
2
10
A
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Q
s
Reverse recovery charge
I
F
= 2 A; V
R
30 V; -dI
F
/dt = 20 A/
s
-
4
11
nC
t
rr1
Reverse recovery time
I
F
= 1 A; V
R
30 V;
-
20
25
ns
-dI
F
/dt = 100 A/
s
t
rr2
Reverse recovery time
I
F
= 0.5 A to I
R
= 1 A; I
rec
= 0.25 A
-
15
20
ns
V
fr
Forward recovery voltage
I
F
= 1 A; dI
F
/dt = 10 A/
s
-
1
-
V
October 1998
2
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
BYW29EX series
ultrafast, rugged
Fig.1. Definition of t
rr1
, Q
s
and I
rrm
Fig.2. Definition of V
fr
Fig.3. Circuit schematic for t
rr2
Fig.4. Definition of t
rr2
Fig.5. Maximum forward dissipation P
F
= f(I
F(AV)
);
square current waveform where I
F(AV)
=I
F(RMS)
x
D.
Fig.6. Maximum forward dissipation P
F
= f(I
F(AV)
);
sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Q
s
100%
10%
time
dI
dt
F
I
R
I
F
I
rrm
t
rr
I = 1A
R
rec
I
= 0.25A
0A
trr2
0.5A
IF
IR
time
time
V F
V
fr
V F
I
F
0
2
4
6
8
10
12
0
2
4
6
8
10
12
D = 1.0
0.5
0.2
0.1
BYW29
IF(AV) / A
PF / W
D =
t
p
t
p
T
T
t
I
Ths(max) / C
150
139
128
117
106
95
84
Vo = 0.791 V
Rs = 0.013 ohms
shunt
Current
to 'scope
D.U.T.
Voltage Pulse Source
R
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
a = 1.57
1.9
2.2
2.8
4
BYW29
IF(AV) / A
PF / W
Ths(max) / C
150
144.5
139
133.5
128
122.5
117
111.5
106
Vo = 0.791 V
Rs = 0.013 Ohms
October 1998
3
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
BYW29EX series
ultrafast, rugged
Fig.7. Maximum t
rr
at T
j
= 25 C.
Fig.8. Maximum I
rrm
at T
j
= 25 C.
Fig.9. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.10. Maximum Q
s
at T
j
= 25 C.
Fig.11. Transient thermal impedance; Z
th j-hs
= f(t
p
).
1
10
trr / ns
1
10
100
1000
100
dIF/dt (A/us)
IF=1A
IF=10A
10
1.0
1.0
10
100
-dIF/dt (A/us)
Qs / nC
IF=10A
5A
2A
1A
100
10
1
0.1
0.01
Irrm / A
1
10
100
-dIF/dt (A/us)
IF=1A
IF=10A
1us
10us
100us
1ms
10ms
100ms
1s
10s
0.001
0.01
0.1
1
10
BYW29F/EX
pulse width, tp (s)
Transient thermal impedance, Zth j-hs (K/W)
D =
t
p
t
p
T
T
P
t
D
0
1
2
30
20
10
0
typ
max
IF / A
0.5
1.5
VF / V
Tj=150 C
Tj=25 C
BYW29
October 1998
4
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
BYW29EX series
ultrafast, rugged
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.12. SOD113; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10.3
max
3.2
3.0
4.6
max
2.9 max
2.8
seating
plane
6.4
15.8
max
0.6
2.5
2.54
5.08
1
2
3 max.
not tinned
3
0.5
2.5
0.9
0.7
M
0.4
15.8
max.
19
max.
13.5
min.
Recesses (2x)
2.5
0.8 max. depth
1.0 (2x)
October 1998
5
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
BYW29EX series
ultrafast, rugged
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
October 1998
6
Rev 1.200
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