DATA SHEET
Preliminary specification
Supersedes data of October 1993
1996 Jun 07
DISCRETE SEMICONDUCTORS
BZG03 series
Voltage regulator diodes
handbook, halfpage
M3D168
1996 Jun 07
2
Philips Semiconductors
Preliminary specification
Voltage regulator diodes
BZG03 series
FEATURES
Glass passivatedb
High maximum operating
temperature
Low leakage current
Excellent stability
UL 94V-O classified plastic
package
Zener working voltage range:
10 to 270 V for 35 types
Supplied in 12 mm embossed tape.
DESCRIPTION
DO-214AC surface mountable
package with glass passivated chip.
The well-defined void-free case is of a
transfer-moulded thermo-setting
plastic.
Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.
handbook, 4 columns
MSA473
cathode
band
Top view
Side view
,,
,,
,,
k
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
P
tot
total power dissipation
T
tp
= 100
C; see Fig.2
-
3.00
W
P
tot
total power dissipation
T
amb
= 50
C; see Fig.2; device
mounted on an Al
2
O
3
PCB (see Fig.5)
-
1.25
W
P
ZSM
non-repetitive peak reverse power
dissipation
t
p
= 100
s; square pulse;
T
j
= 25
C prior to surge; see Fig.3
-
600
W
T
stg
storage temperature
-
65
+175
C
T
j
junction temperature
-
65
+175
C
1996 Jun 07
3
Philips Semiconductors
Preliminary specification
Voltage regulator diodes
BZG03 series
ELECTRICAL CHARACTERISTICS
Total series
T
j
= 25
C unless otherwise specified.
Per type
T
j
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
V
F
forward voltage
I
F
= 0.5 A; see Fig.4
1.2
V
TYPE
No.
SUFFIX
(1)
WORKING VOLTAGE
DIFFERENTIAL
RESISTANCE
TEMPERATURE
COEFFICIENT
TEST
CURRENT
REVERSE CURRENT
at REVERSE VOLTAGE
V
Z
(V) at I
Z
r
dif
(
) at I
Z
S
Z
(%/K) at I
Z
I
Z
(mA)
I
R
(
A)
V
R
(V)
MIN.
NOM.
MAX.
TYP.
MAX.
MIN.
MAX.
MAX.
C10
9.4
10
10.6
2
4
0.05
0.09
50
7
7.5
C11
10.4
11
11.6
4
7
0.05
0.10
50
4
8.2
C12
11.4
12
12.7
4
7
0.05
0.10
50
3
9.1
C13
12.4
13
14.1
5
10
0.05
0.10
50
2
10
C15
13.8
15
15.6
5
10
0.05
0.10
50
1
11
C16
15.3
16
17.1
6
15
0.06
0.11
25
1
12
C18
16.8
18
19.1
6
15
0.06
0.11
25
1
13
C20
18.8
20
21.2
6
15
0.06
0.11
25
1
15
C22
20.8
22
23.3
6
15
0.06
0.11
25
1
16
C24
22.8
24
25.6
7
15
0.06
0.11
25
1
18
C27
25.1
27
28.9
7
15
0.06
0.11
25
1
20
C30
28
30
32
8
15
0.06
0.11
25
1
22
C33
31
33
35
8
15
0.06
0.11
25
1
24
C36
34
36
38
21
40
0.06
0.11
10
1
27
C39
37
39
41
21
40
0.06
0.11
10
1
30
C43
40
43
46
24
45
0.07
0.12
10
1
33
C47
44
47
50
24
45
0.07
0.12
10
1
36
C51
48
51
54
25
60
0.07
0.12
10
1
39
C56
52
56
60
25
60
0.07
0.12
10
1
43
C62
58
62
66
25
80
0.08
0.13
10
1
47
C68
64
68
72
25
80
0.08
0.13
10
1
51
C75
70
75
79
30
100
0.08
0.13
10
1
56
C82
77
82
87
30
100
0.08
0.13
10
1
62
C91
85
91
96
60
200
0.09
0.13
5
1
68
C100
94
100
106
60
200
0.09
0.13
5
1
75
C110
104
110
116
80
250
0.09
0.13
5
1
82
C120
114
120
127
80
250
0.09
0.13
5
1
91
1996 Jun 07
4
Philips Semiconductors
Preliminary specification
Voltage regulator diodes
BZG03 series
Note
1. To complete the type number the suffix is added to the basic type number, e.g. BZG03-C130.
THERMAL CHARACTERISTICS
Notes
1. Device mounted on an Al
2
O
3
printed-circuit board, 0.7 mm thick; thickness of Cu-layer
35
m, see Fig.5.
2. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer
40
m, see Fig.5.
For more information please refer to the
"General Part of associated Handbook".
C130
124
130
141
110
300
0.09
0.13
5
1
100
C150
138
150
156
130
300
0.09
0.13
5
1
110
C160
153
160
171
150
350
0.09
0.13
5
1
120
C180
168
180
191
180
400
0.09
0.13
5
1
130
C200
188
200
212
200
500
0.09
0.13
5
1
150
C220
208
220
233
350
750
0.09
0.13
2
1
160
C240
228
240
256
400
850
0.09
0.13
2
1
180
C270
251
270
289
450
1000
0.09
0.13
2
1
200
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
thermal resistance from junction to tie-point
25
K/W
R
th j-a
thermal resistance from junction to ambient
note 1
100
K/W
note 2
150
K/W
TYPE
No.
SUFFIX
(1)
WORKING VOLTAGE
DIFFERENTIAL
RESISTANCE
TEMPERATURE
COEFFICIENT
TEST
CURRENT
REVERSE CURRENT
at REVERSE VOLTAGE
V
Z
(V) at I
Z
r
dif
(
) at I
Z
S
Z
(%/K) at I
Z
I
Z
(mA)
I
R
(
A)
V
R
(V)
MIN.
NOM.
MAX.
TYP.
MAX.
MIN.
MAX.
MAX.
1996 Jun 07
5
Philips Semiconductors
Preliminary specification
Voltage regulator diodes
BZG03 series
GRAPHICAL DATA
Fig.2
Maximum total power dissipation as a
function of temperature.
Solid line: tie-point temperature.
Dotted line: ambient temperature; device mounted on an Al
2
O
3
PCB
as shown in Fig.5.
handbook, halfpage
0
200
4
0
2
1
3
MBH451
Ptot
(W)
100
T (
C)
T
j
= 25
C prior to surge.
Fig.3
Maximum non-repetitive peak reverse
power dissipation as a function of pulse
duration (square pulse).
handbook, halfpage
10
-
2
10
10
2
10
3
10
4
10
-
1
1
tp (ms)
PZSM
(W)
10
MBH452
T
j
= 25
C.
Fig.4
Forward current as a function of forward
voltage; typical values.
handbook, halfpage
0
2
3
0
1
2
MBH453
IF
(A)
1
VF (V)
Fig.5 Printed-circuit board for surface mounting.
Dimensions in mm.
MSB213
4.5
2.5
1.25
50
50
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