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Электронный компонент: BZX399-C18

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DATA SHEET
Product specification
1999 Jun 04
DISCRETE SEMICONDUCTORS
BZX399 series
Voltage regulator diodes
book, halfpage
M3D049
1999 Jun 04
2
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX399 series
FEATURES
Total power dissipation: max. 300 mW
Tolerance:
5%
Working voltage range: nom. 1.8 to 43 V (E24 range)
Improved I
Z
/V
Z
characteristic at low currents
(I
Z
= 50
A). This results in a noise free and sharp
breakdown knee.
APPLICATIONS
General regulation functions, where low noise at low
currents is required
Low power consumption applications
(e.g. hand-held applications).
DESCRIPTION
Low-power low noise voltage regulator diodes in SOD323
plastic SMD package.
The diodes are available in the normalized E24
5%
tolerance range. The series consists of 34 types with
nominal working voltages from 1.8 to 43 V.
PINNING
PIN
DESCRIPTION
1
cathode
2
anode
Fig.1 Simplified outline (SOD323) and symbol.
handbook, halfpage
,
1
2
Top view
MAM387
MARKING
TYPE NUMBER
MARKING
CODE
TYPE NUMBER
MARKING
CODE
TYPE NUMBER
MARKING
CODE
TYPE NUMBER
MARKING
CODE
BZX399-C1V8
B1
BZX399-C4V3
B0
BZX399-C10
BJ
BZX399-C24
BT
BZX399-C2V0
B2
BZX399-C4V7
BA
BZX399-C11
BK
BZX399-C27
BU
BZX399-C2V2
B3
BZX399-C5V1
BB
BZX399-C12
BL
BZX399-C30
BV
BZX399-C2V4
B4
BZX399-C5V6
BC
BZX399-C13
BM
BZX399-C33
BW
BZX399-C2V7
B5
BZX399-C6V2
BD
BZX399-C15
BN
BZX399-C36
BX
BZX399-C3V0
B6
BZX399-C6V8
BE
BZX399-C16
BP
BZX399-C39
BY
BZX399-C3V3
B7
BZX399-C7V5
BF
BZX399-C18
BQ
BZX399-C43
BZ
BZX399-C3V6
B8
BZX399-C8V2
BG
BZX399-C20
BR
BZX399-C3V9
B9
BZX399-C9V1
BH
BZX399-C22
BS
1999 Jun 04
3
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX399 series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a FR4 printed circuit-board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
F
continuous forward current
-
250
mA
I
ZSM
non-repetitive peak reverse current
t
p
= 100
s; square wave;
T
amb
= 25
C prior to surge
see Tables 1 and 2
P
tot
total power dissipation
T
amb
= 25
C; note 1
-
300
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
ELECTRICAL CHARACTERISTICS
Total BZX399-C series
T
j
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
V
F
forward voltage
I
F
= 10 mA; see Fig.5
0.9
V
I
F
= 100 mA; see Fig.5
1.0
V
I
R
reverse current
BZX399-C1V8
V
R
= 1 V
2
A
BZX399-C2V0
V
R
= 1 V
1
A
BZX399-C2V2
V
R
= 1 V
0.5
A
BZX399-C2V4
V
R
= 1 V
0.2
A
BZX399-C2V7
V
R
= 1 V
0.05
A
BZX399-C3V0
V
R
= 1 V
0.02
A
BZX399-C3V3
V
R
= 2 V
2
A
BZX399-C3V6
V
R
= 2 V
1
A
BZX399-C3V9
V
R
= 2 V
0.5
A
BZX399-C4V3
V
R
= 2 V
0.1
A
BZX399-C4V7
V
R
= 3 V
2
A
BZX399-C5V1
V
R
= 3 V
1
A
BZX399-C5V6
V
R
= 4 V
1
A
BZX399-C6V2
V
R
= 5 V
0.1
A
BZX399-C6V8
V
R
= 5 V
0.01
A
BZX399-C7V5
V
R
= 5 V
0.1
A
BZX399-C8V2
V
R
= 6 V
0.2
A
BZX399-C9V1
V
R
= 7 V
0.1
A
BZX399-C10
V
R
= 7 V
0.1
A
BZX399-C11
V
R
= 8 V
0.05
A
BZX399-C12
V
R
= 9 V
0.05
A
BZX399-C13
V
R
= 10 V
0.05
A
BZX399-C15 to 43
V
R
= 0.7V
Znom
0.01
A
1999 Jun 04
4
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX399 series
Table 1
Per type BZX399-C1V8 to C15
T
j
= 25
C unless otherwise specified.
Note
1.
V
Z
= V
Z
at 100
A minus V
Z
at 10
A.
BZX399-C
XXX
WORKING
VOLTAGE
V
Z
(V)
I
Z
= 50
A
VOLTAGE
CHANGE
V
Z
(V)
(note 1)
TEMP. COEFF.
S
Z
(mV/K)
I
Z
= 50
A
(see Figs 2, 3 and 4)
DIODE CAP.
C
d
(pF)
at f = 1 MHz;
V
R
= 0 V
NON-REPETITIVE PEAK
REVERSE CURRENT
I
ZSM
(A) at t
p
= 100
s;
T
amb
= 25
C
Tol.
5%
MIN.
MAX.
MAX.
TYP.
MAX.
MAX.
1V8
1.71
1.89
0.65
-
0.85
425
6.0
2V0
1.90
2.10
0.70
-
0.95
410
6.0
2V2
2.09
2.31
0.75
-
1.05
390
6.0
2V4
2.28
2.52
0.80
-
1.15
370
6.0
2V7
2.57
2.84
0.85
-
1.35
350
6.0
3V0
2.85
3.15
0.90
-
1.50
325
6.0
3V3
3.14
3.47
0.93
-
1.65
310
6.0
3V6
3.42
3.78
0.95
-
1.80
300
6.0
3V9
3.71
4.10
0.97
-
1.95
290
6.0
4V3
4.09
4.52
0.99
-
2.05
280
6.0
4V7
4.47
4.94
0.97
-
1.90
275
6.0
5V1
4.85
5.36
0.60
0.15
300
5.0
5V6
5.32
5.88
0.20
1.75
275
4.0
6V2
5.89
6.51
0.10
2.35
250
3.0
6V8
6.46
7.14
0.10
3.00
215
3.0
7V5
7.13
7.88
0.15
3.60
170
3.0
8V2
7.79
8.61
0.15
4.25
150
3.0
9V1
8.65
9.56
0.10
5.00
120
3.0
10
9.50
10.50
0.10
5.80
110
3.0
11
10.45
11.55
0.11
6.70
110
2.5
12
11.40
12.60
0.12
7.65
105
2.5
13
12.35
13.65
0.13
8.60
105
2.5
15
14.25
15.75
0.15
10.50
100
2.0
1999 Jun 04
5
Philips Semiconductors
Product specification
Voltage regulator diodes
BZX399 series
Table 2
Per type BZX399-C16 to C43
T
j
= 25
C unless otherwise specified.
Note
1.
V
Z
= V
Z
at 100
A minus V
Z
at 10
A.
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a FR4 printed circuit-board.
2. Soldering point of the cathode tab.
BZX399- C
XXX
WORKING
VOLTAGE
V
Z
(V)
I
Z
= 50
A
VOLTAGE
CHANGE
V
Z
(V)
(note 1)
TEMP. COEFF.
S
Z
(mV/K)
I
Z
= 50
A
(see Fig.4)
DIODE CAP.
C
d
(pF)
at f = 1 MHz;
V
R
= 0 V
NON-REPETITIVE PEAK
REVERSE CURRENT
I
ZSM
(A) at t
p
= 100
s;
T
amb
= 25
C
Tol.
5%
MIN.
MAX.
MAX.
TYP.
MAX.
MAX.
16
15.20
16.80
0.16
11.4
95
1.5
18
17.10
18.90
0.18
13.3
95
1.5
20
19.00
21.00
0.20
15.3
90
1.5
22
20.90
23.10
0.22
17.2
85
1.25
24
22.80
25.20
0.24
19.2
80
1.25
27
25.65
28.35
0.27
22.0
75
1.0
30
28.50
31.50
0.30
25.2
65
1.0
33
31.35
34.65
0.30
28.5
60
0.9
36
34.20
37.80
0.30
32.0
60
0.8
39
37.05
40.95
0.30
35.1
60
0.7
43
40.85
45.15
0.30
39.4
55
0.6
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
415
K/W
R
th j-s
thermal resistance from junction to soldering point note 2
110
K/W