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Электронный компонент: HEF4502BT

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DATA SHEET
Product specification
File under Integrated Circuits, IC04
January 1995
INTEGRATED CIRCUITS
HEF4502B
buffers
Strobed hex inverter/buffer
For a complete data sheet, please also download:
The IC04 LOCMOS HE4000B Logic
Family Specifications HEF, HEC
The IC04 LOCMOS HE4000B Logic
Package Outlines/Information HEF, HEC
January 1995
2
Philips Semiconductors
Product specification
Strobed hex inverter/buffer
HEF4502B
buffers
DESCRIPTION
The HEF4502B consists of six inverter/buffers with 3-state
outputs. When the output enable input (EO) is HIGH all six
outputs (O
1
to O
6
) are in the high impedance OFF-state.
When the enable input (E) is HIGH all six outputs are
switched to LOW. The outputs have a 2-TTL load drive
capability.
Fig.1 Functional diagram.
PINNING
HEF4502BP(N):
16-lead DIL; plastic (SOT38-1)
HEF4502BD(F):
16-lead DIL; ceramic (cerdip) (SOT74)
HEF4502BT(D):
16-lead SO; plastic (SOT109-1)
( ): Package Designator North America
D
1
to D
6
data inputs
E
enable input
EO
output enable input
O
1
to O
6
3-state outputs
Fig.2 Pinning diagram.
TRUTH TABLE
Notes
1. H = HIGH state (the more pos. voltage)
L = LOW state (the less pos. voltage)
X = state is immaterial
Z = high impedance off state
INPUTS
OUTPUT
D
n
E
EO
O
n
L
L
L
H
H
L
L
L
X
H
L
L
X
X
H
Z
FAMILY DATA, I
DD
LIMITS category BUFFERS
See Family Specifications
Fig.3 Logic diagram.
January 1995
3
Philips Semiconductors
Product specification
Strobed hex inverter/buffer
HEF4502B
buffers
DC CHARACTERISTICS
V
SS
= 0 V
AC CHARACTERISTICS
V
SS
= 0 V; T
amb
= 25
C; input transition times
20 ns
V
DD
V
V
OH
V
V
OL
V
SYMBOL
T
amb
(
C)
-
40
+
25
+
85
MIN.
MAX.
MIN.
MAX.
MIN.
MAX.
Output current
5
4,6
1,2
1,0
0,8
mA
HIGH
10
9,5
-
I
OH
3,8
3,2
2,5
mA
15
13,5
12,0
10,0
8,0
mA
Output current
HIGH
5
2,5
-
I
OH
3,8
3,2
2,5
mA
Output current
4,75
0,4
3,5
2,9
2,3
mA
LOW
10
0,5
I
OL
12,0
10,0
8,0
mA
15
1,5
24,0
20,0
16,0
mA
V
DD
V
TYPICAL FORMULA FOR P (
W)
Dynamic power
5
5 000 f
i
+
(f
o
C
L
)
V
DD
2
where
dissipation per
10
25 000 f
i
+
(f
o
C
L
)
V
DD
2
f
i
= input freq. (MHz)
package (P)
15
85 000 f
i
+
(f
o
C
L
)
V
DD
2
f
o
= output freq. (MHz)
C
L
= load capacitance (pF)
(f
o
C
L
) = sum of outputs
V
DD
= supply voltage (V)
January 1995
4
Philips Semiconductors
Product specification
Strobed hex inverter/buffer
HEF4502B
buffers
AC CHARACTERISTICS
V
SS
= 0 V; T
amb
= 25
C; C
L
= 50 pF; input transition times
20 ns
V
DD
V
SYMBOL
TYP.
MAX.
TYPICAL EXTRAPOLATION
FORMULA
Propagation delays
D
n
, E
O
n
5
85
170 ns
77 ns
+
(0,17 ns/pF) C
L
HIGH to LOW
10
t
PHL
40
80 ns
37 ns
+
(0,06 ns/pF) C
L
15
35
70 ns
33 ns
+
(0,04 ns/pF) C
L
5
80
160 ns
66 ns
+
(0,28 ns/pF) C
L
LOW to HIGH
10
t
PLH
35
70 ns
28 ns
+
(0,13 ns/pF) C
L
15
30
60 ns
25 ns
+
(0,10 ns/pF) C
L
Output transition times
5
25
50 ns
10 ns
+
(0,30 ns/pF) C
L
HIGH to LOW
10
t
THL
12
24 ns
7 ns
+
(0,11 ns/pF) C
L
15
8
15 ns
5 ns
+
(0,07 ns/pF) C
L
5
30
60 ns
5 ns
+
(0,50 ns/pF) C
L
LOW to HIGH
10
t
TLH
15
30 ns
3 ns
+
(0,24 ns/pF) C
L
15
12
24 ns
3 ns
+
(0,18 ns/pF) C
L
3-state propagation delays
Output disable times
EO
O
n
5
60
160 ns
HIGH
10
t
PHZ
55
140 ns
15
55
140 ns
5
50
100 ns
LOW
10
t
PLZ
35
70 ns
15
30
60 ns
Output enable times
EO
O
n
5
60
120 ns
HIGH
10
t
PZH
35
70 ns
15
30
60 ns
5
55
110 ns
LOW
10
t
PZL
25
50 ns
15
20
40 ns