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Электронный компонент: IRFZ48N

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Philips Semiconductors
Product specification
N-channel enhancement mode
IRFZ48N
TrenchMOS
TM
transistor
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel
enhancement
mode
SYMBOL
PARAMETER
MAX.
UNIT
standard level field-effect power
transistor in a plastic envelope using
V
DS
Drain-source voltage
55
V
'trench' technology. The device
I
D
Drain current (DC)
64
A
features very low on-state resistance
P
tot
Total power dissipation
140
W
and has integral zener diodes giving
T
j
Junction temperature
175
C
ESD protection up to 2kV. It is
R
DS(ON)
Drain-source on-state
16
m
intended for use in switched mode
resistance
V
GS
= 10 V
power supplies and general purpose
switching applications.
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
Drain-source voltage
-
-
55
V
V
DGR
Drain-gate voltage
R
GS
= 20 k
-
55
V
V
GS
Gate-source voltage
-
-
20
V
I
D
Drain current (DC)
T
mb
= 25 C
-
64
A
I
D
Drain current (DC)
T
mb
= 100 C
-
45
A
I
DM
Drain current (pulse peak value)
T
mb
= 25 C
-
210
A
P
tot
Total power dissipation
T
mb
= 25 C
-
140
W
T
stg
, T
j
Storage & operating temperature
-
- 55
175
C
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge capacitor
Human body model
-
2
kV
voltage, all pins
(100 pF, 1.5 k
)
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance junction to
-
-
1.1
K/W
mounting base
R
th j-a
Thermal resistance junction to
in free air
60
-
K/W
ambient
d
g
s
1 2 3
tab
February 1999
1
Rev 1.000
Philips Semiconductors
Product specification
N-channel enhancement mode
IRFZ48N
TrenchMOS
TM
transistor
STATIC CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)DSS
Drain-source breakdown
V
GS
= 0 V; I
D
= 0.25 mA;
55
-
-
V
voltage
T
j
= -55C
50
-
-
V
V
GS(TO)
Gate threshold voltage
V
DS
= V
GS
; I
D
= 1 mA
2
3.0
4.0
V
T
j
= 175C
1
-
-
V
T
j
= -55C
-
-
4.4
V
I
DSS
Zero gate voltage drain current
V
DS
= 55 V; V
GS
= 0 V;
-
0.05
10
A
T
j
= 175C
-
-
500
A
I
GSS
Gate source leakage current
V
GS
=
10 V; V
DS
= 0 V
-
0.02
1
A
T
j
= 175C
-
-
20
A
V
(BR)GSS
Gate-source breakdown
I
G
=
1 mA;
16
-
-
V
voltage
R
DS(ON)
Drain-source on-state
V
GS
= 10 V; I
D
= 25 A
-
12
16
m
resistance
T
j
= 175C
-
-
30
m
DYNAMIC CHARACTERISTICS
T
mb
= 25C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
g
fs
Forward transconductance
V
DS
= 25 V; I
D
= 25 A
8
39
-
S
C
iss
Input capacitance
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
-
2200
2900
pF
C
oss
Output capacitance
-
500
600
pF
C
rss
Feedback capacitance
-
200
270
pF
Q
g(tot)
Total gate charge
I
D
= 50 A; V
DD
= 44 V; V
GS
= 10 V
-
-
85
nC
Q
gs
Gate-source charge
-
-
19
nC
Q
gd
Gate-drain (Miller) charge
-
-
37
nC
t
d on
Turn-on delay time
V
DD
= 30 V; I
D
= 25 A;
-
18
26
ns
t
r
Turn-on rise time
V
GS
= 10 V; R
G
= 10
-
35
85
ns
t
d off
Turn-off delay time
Resistive load
-
45
60
ns
t
f
Turn-off fall time
-
30
45
ns
L
d
Internal drain inductance
Measured from contact screw on
-
3.5
-
nH
tab to centre of die
L
d
Internal drain inductance
Measured from drain lead 6 mm
-
4.5
-
nH
from package to centre of die
L
s
Internal source inductance
Measured from source lead 6 mm
-
7.5
-
nH
from package to source bond pad
February 1999
2
Rev 1.000
Philips Semiconductors
Product specification
N-channel enhancement mode
IRFZ48N
TrenchMOS
TM
transistor
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
DR
Continuous reverse drain
-
-
64
A
current
I
DRM
Pulsed reverse drain current
-
-
210
A
V
SD
Diode forward voltage
I
F
= 25 A; V
GS
= 0 V
-
0.95
1.2
V
I
F
= 65 A; V
GS
= 0 V
-
1.0
-
V
t
rr
Reverse recovery time
I
F
= 65 A; -dI
F
/dt = 100 A/
s;
-
57
-
ns
Q
rr
Reverse recovery charge
V
GS
= -10 V; V
R
= 30 V
-
0.14
-
C
AVALANCHE LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
W
DSS
Drain-source non-repetitive
I
D
= 65 A; V
DD
25 V;
-
-
200
mJ
unclamped inductive turn-off
V
GS
= 10 V; R
GS
= 50
; T
mb
= 25 C
energy
Fig.1. Normalised power dissipation.
PD% = 100
P
D
/P
D 25 C
= f(T
mb
)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D
/I
D 25 C
= f(T
mb
); conditions: V
GS
5 V
0
20
40
60
80
100
120
140
160
180
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0
20
40
60
80
100
120
140
160
180
Tmb / C
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
February 1999
3
Rev 1.000
Philips Semiconductors
Product specification
N-channel enhancement mode
IRFZ48N
TrenchMOS
TM
transistor
Fig.3. Safe operating area. T
mb
= 25 C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
Fig.5. Typical output characteristics, T
j
= 25 C.
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance, T
j
= 25 C.
R
DS(ON)
= f(I
D
); parameter V
GS
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
) ; conditions: V
DS
= 25 V; parameter T
j
Fig.8. Typical transconductance, T
j
= 25 C.
g
fs
= f(I
D
); conditions: V
DS
= 25 V
VDS / V
ID / A
1 us
10 us
100 us
1 ms
10 ms
100 ms
tp =
1
10
100
1000
1
10
55
RDS(ON) = VDS/ID
DC
SOAX514
100
0
5
10
15
20
25
30
10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100
RDS(ON)/mOhm
VGS/V =
6
6.5
7
8
10
9
ID/A
1E-07
1E-05
1E-03
1E-01
1E+01
t / s
Zth / (K/W)
1E+01
1E+00
1E-01
1E-02
1E-03
0
0.5
0.2
0.1
0.05
0.02
BUKX514-55
D =
t
p
t
p
T
T
P
t
D
0
1
2
3
4
5
6
7
8
9
0
20
40
60
80
100
ID/A
VGS/V
Tj/C =
175
25
0
2
4
6
8
10
0
20
40
60
80
100
16
10
8
7.5
7
6.5
6
5.5
5
4.5
4
VGS/V =
ID/A
VDS/V
0
20
40
60
80
100
0
5
10
15
20
25
30
35
40
gfs/S
ID/A
February 1999
4
Rev 1.000
Philips Semiconductors
Product specification
N-channel enhancement mode
IRFZ48N
TrenchMOS
TM
transistor
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 C
= f(T
j
); I
D
= 25 A; V
GS
= 5 V
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 C; V
DS
= V
GS
Fig.12. Typical capacitances, C
iss
, C
oss
, C
rss
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
Fig.13. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
); conditions: I
D
= 50 A; parameter V
DS
Fig.14. Typical reverse diode current.
I
F
= f(V
SDS
); conditions: V
GS
= 0 V; parameter T
j
-100
-50
0
50
100
150
200
0.5
1
1.5
2
2.5
BUK959-60
Tmb / degC
Rds(on) normlised to 25degC
a
0.01
0.1
1
10
100
0
5
1
1.5
2
2.5
3
3.5
4
Thousands (pF)
VDS/V
Ciss
Coss
Crss
BUK759-60
-100
-50
0
50
100
150
200
0
1
2
3
4
5
Tj / C
VGS(TO) / V
max.
typ.
min.
0
10
20
30
40
50
60
0
2
4
6
8
10
12
VGS/V
VDS = 14V
VDS = 44V
QG/nC
0
1
2
3
4
5
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
Sub-Threshold Conduction
typ
2%
98%
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
20
40
60
80
100
IF/A
VSDS/V
Tj/C =
175
25
February 1999
5
Rev 1.000
Philips Semiconductors
Product specification
N-channel enhancement mode
IRFZ48N
TrenchMOS
TM
transistor
Fig.15. Normalised avalanche energy rating.
W
DSS
% = f(T
mb
); conditions: I
D
= 75 A
Fig.16. Avalanche energy test circuit.
Fig.17. Switching test circuit.
20
40
60
80
100
120
140
160
180
Tmb / C
120
110
100
90
80
70
60
50
40
30
20
10
0
WDSS%
RD
T.U.T.
VDD
RG
VDS
+
-
VGS
0
L
T.U.T.
VDD
RGS
R 01
VDS
-ID/100
+
-
shunt
VGS
0
W
DSS
=
0.5
LI
D
2
BV
DSS
/(
BV
DSS
-
V
DD
)
February 1999
6
Rev 1.000
Philips Semiconductors
Product specification
N-channel enhancement mode
IRFZ48N
TrenchMOS
TM
transistor
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.18. SOT78 (TO220AB); pin 2 connected to mounting base.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for SOT78 (TO220) envelopes.
3. Epoxy meets UL94 V0 at 1/8".
10,3
max
3,7
2,8
3,0
3,0 max
not tinned
1,3
max
(2x)
1 2 3
2,4
0,6
4,5
max
5,9
min
15,8
max
1,3
2,54 2,54
0,9 max (3x)
13,5
min
February 1999
7
Rev 1.000
Philips Semiconductors
Product specification
N-channel enhancement mode
IRFZ48N
TrenchMOS
TM
transistor
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
February 1999
8
Rev 1.000