MAC97A8; MAC97A6
Logic level triac
Rev. 01 -- 29 March 2001
Product specification
c
c
M3D186
1.
Description
Logic level sensitive gate triac intended to be interfaced directly to microcontrollers,
logic integrated circuits and other low power gate trigger circuits.
Product availability:
MAC97A8 in SOT54 (TO-92)
MAC97A6 in SOT54 (TO-92) available on request - contact your sales
representative.
2.
Features
s
Blocking voltage to 600 V (MAC97A8)
s
RMS on-state current to 0.6 A
s
Sensitive gate in all four quadrants
s
Low cost package.
3.
Applications
s
General purpose bidirectional switching
s
Phase control applications
s
Solid state relays.
4.
Pinning information
Table 1:
Pinning - SOT54 (TO-92), simplified outline and symbol
Pin
Description
Simplified outline
Symbol
1
main terminal 2
SOT54 (TO-92)
2
gate
3
main terminal 1
1
3
2
MSB03
MBL305
1
3
2
Philips Semiconductors
MAC97A8; MAC97A6
Logic level triac
Product specification
Rev. 01 -- 29 March 2001
2 of 12
9397 750 07917
Philips Electronics N.V. 2001. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
V
DRM
repetitive peak off-state voltage
MAC97A8
MAC97A6
T
j
= 25 to 125
C
-
600
V
T
j
= 25 to 125
C
-
400
V
I
T(RMS)
on-state current (RMS value)
full sine wave; T
lead
50
C;
Figure 5
-
0.6
A
I
TSM
non-repetitive peak on-state current
-
8.0
A
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
V
DRM
repetitive peak off-state voltage
MAC97A8
MAC97A6
T
j
= 25 to 125
C
-
600
V
T
j
= 25 to 125
C
-
400
V
I
T(RMS)
on-state current (RMS value)
full sine wave; T
lead
50
C;
Figure 5
-
0.6
A
I
TSM
non-repetitive peak on-state current
full sine wave; T
j
= 25
C prior to surge
t = 20 ms
-
8.0
A
t = 16.7 ms
-
8.8
A
I
2
t
I
2
t for fusing
t
=
10 ms
-
0.32
A
2
s
dI
T
/dt
repetitive rate of rise of on-state
current after triggering
I
TM
= 1.0 A; I
G
= 0.2 A; dI
G
/dt = 0.2 A/
s
T2+ G+
-
50
A/
s
T2+ G
-
-
50
A/
s
T2
-
G
-
-
50
A/
s
T2
-
G+
-
10
A/
s
I
GM
gate current (peak value)
t = 2
s max
-
1
A
V
GM
gate voltage (peak value)
t = 2
s max
5
V
P
GM
gate power (peak value)
t = 2
s max
-
5
W
P
G(AV)
average gate power
T
case
= 80
C; t = 2
s max
-
0.1
W
T
stg
storage temperature
-
40
+150
C
T
j
operating junction temperature
-
40
+125
C
Philips Semiconductors
MAC97A8; MAC97A6
Logic level triac
Product specification
Rev. 01 -- 29 March 2001
3 of 12
9397 750 07917
Philips Electronics N.V. 2001. All rights reserved.
7.
Thermal characteristics
7.1 Transient thermal impedance
Table 4:
Thermal characteristics
Symbol
Parameter
Conditions
Value
Unit
R
th(j-lead)
thermal resistance from junction to lead
full cycle
60
K/W
half cycle
80
K/W
R
th(j-a)
thermal resistance from junction to ambient
mounted on a printed circuit board;
lead length = 4 mm;
Figure 1
150
K/W
.
Fig 1.
Transient thermal impedance from junction to ambient as a function of pulse
duration.
tp (s)
10
10-2
10-4
10-5
10-3
10-1
1
Zth(j-a)
(K/W)
103
102
10
1
tp
P
t
003aaa029
Philips Semiconductors
MAC97A8; MAC97A6
Logic level triac
Product specification
Rev. 01 -- 29 March 2001
4 of 12
9397 750 07917
Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
T
j
= 25
C unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A;
Figure 8
T2+ G+
-
1
5
mA
T2+ G
-
-
2
5
mA
T2
-
G
-
-
2
5
mA
T2
-
G+
-
4
7
mA
I
L
latching current
V
D
= 12 V; I
GT
= 0.1 A;
Figure 9
T2+ G+
-
1
10
mA
T2+ G
-
-
5
10
mA
T2
-
G
-
-
1
10
mA
T2
-
G+
-
2
10
mA
I
H
holding current
V
D
= 12 V; I
GT
= 0.1 A;
Figure 10
-
1
10
mA
V
T
on-state voltage
I
T
= 0.85 A;
Figure 11
-
1.4
1.9
V
V
GT
gate trigger voltage
V
D
= 12 V; I
T
= 0.1 A;
Figure 7
-
0.9
2
V
V
D
= V
DRM
; I
T
= 0.1 A; T
j
= 110
C
0.1
0.7
-
V
I
D
off-state leakage current
V
D
= V
DRM (max)
; T
j
= 110
C
-
3
100
A
Dynamic characteristics
dV
D
/dt
critical rate of rise of
off-state voltage
V
D
= 67% of V
DM(max)
;
T
case
= 110
C; exponential
waveform; gate open circuit;
Figure 12
30
45
-
V/
s
dV
com
/dt
critical rate of rise of
commutation voltage
V
D
= rated V
DRM
; T
case
= 50
C;
I
TM
= 0.84 A;
commutating dI/dt = 0.3 A/ms
-
5
-
V/
s
t
gt
gate controlled turn-on
time
I
TM
= 1.0 A; V
D
= V
DRM(max)
;
I
G
= 25 mA; dI
G
/dt = 5 A/
s
-
2
-
s
Philips Semiconductors
MAC97A8; MAC97A6
Logic level triac
Product specification
Rev. 01 -- 29 March 2001
5 of 12
9397 750 07917
Philips Electronics N.V. 2001. All rights reserved.
= conduction angle
t
p
20 ms
Fig 2.
Maximum on-state dissipation as a function of
RMS on-state current; typical values.
Fig 3.
Maximum permissible non-repetitive peak
on-state current as a function of pulse width for
sinusoidal currents; typical values.
n = number of cycles at f = 50 Hz
Fig 4.
Maximum permissible non-repetitive peak
on-state current as a function of number of
cycles for sinusoidal currents; typical values.
Fig 5.
Maximum permissible RMS current as a
function of lead temperature; typical values.
1
0.4
0.2
0
0.6
0.8
1
1.2
Ptot
(W)
IT(RMS) (A)
0
0.2
0.4
0.6
0.8
30
60
90
120
= 180
003aaa036
103
102
10
1
10-1
10-2
10-4
10-3
10-5
tp (s)
ITSM
(A)
003aaa040
T
I
TSM
time
I
Tj initial = 25
o
C max
T
10
8
6
4
2
0
1
10
102
103
ITSM
(A)
n
003aaa038
T
I
TSM
time
I
Tj initial = 25
o
C max
T
1
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
Tlead (
oC)
IT(RMS)
(A)
003aaa037
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