Philips Semiconductors
NE/SA5209
Wideband variable gain amplifier
Product specification
1990 Aug 20
INTEGRATED CIRCUITS
RF Communications Handbook
Philips Semiconductors
Product specification
NE/SA5209
Wideband variable gain amplifier
2
1990 Aug 20
853-1453 00223
DESCRIPTION
The NE5209 represents a breakthrough in monolithic amplifier
design featuring several innovations. This unique design has
combined the advantages of a high speed bipolar process with the
proven Gilbert architecture.
The NE5209 is a linear broadband RF amplifier whose gain is
controlled by a single DC voltage. The amplifier runs off a single 5
volt supply and consumes only 40mA. The amplifier has high
impedance (1k
) differential inputs. The output is 50
differential.
Therefore, the 5209 can simultaneously perform AGC, impedance
transformation, and the balun functions.
The dynamic range is excellent over a wide range of gain setting.
Furthermore, the noise performance degrades at a comparatively
slow rate as the gain is reduced. This is an important feature when
building linear AGC systems.
FEATURES
Gain to 1.5GHz
850MHz bandwidth
High impedance differential input
50
differential output
Single 5V power supply
0 - 1V gain control pin
>60dB gain control range at 200MHz
26dB maximum gain differential
Exceptional V
CONTROL
/ V
GAIN
linearity
7dB noise figure minimum
Full ESD protection
Easily cascadable
PIN CONFIGURATION
N, D PACKAGES
OUTA
VCC1
INA
GND
2
VCC2
GND1
GND1
GND2
1
2
3
4
5
6
7
8
9
10
11
12
13
14
16
15
INB
GND1
VBG
VAGC
OUTB
GND2
GND2
GND2
SR00237
Figure 1. Pin Configuration
APPLICATIONS
Linear AGC systems
Very linear AM modulator
RF balun
Cable TV multi-purpose amplifier
Fiber optic AGC
RADAR
User programmable fixed gain block
Video
Satellite receivers
Cellular communications
ORDERING INFORMATION
DESCRIPTION
TEMPERATURE RANGE
ORDER CODE
DWG #
16-Pin Plastic Small Outline (SO) package
0 to +70
C
NE5209D
SOT109-1
16-Pin Plastic Dual In-Line Package (DIP)
0 to +70
C
NE5209N
SOT28-4
16-Pin Plastic Small Outline (SO) package
-40 to +85
C
SA5209D
SOT109-1
16-Pin Plastic Dual In-Line Package (DIP)
-40 to +85
C
SA5209N
SOT28-4
Philips Semiconductors
Product specification
NE/SA5209
Wideband variable gain amplifier
1990 Aug 20
3
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
RATING
UNITS
V
CC
Supply voltage
-0.5 to +8.0
V
P
D
Power dissipation, T
A
= 25
o
C (still air)
1
16-Pin Plastic DIP
16-Pin Plastic SO
1450
1100
mW
mW
T
JMAX
Maximum operating junction temperature
150
C
T
STG
Storage temperature range
-65 to +150
C
NOTES:
1. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance,
JA
:
16-Pin DIP:
JA
= 85
C/W
16-Pin SO:
JA
= 110
C/W
RECOMMENDED OPERATING CONDITIONS
SYMBOL
PARAMETER
RATING
UNITS
V
CC
Supply voltage
V
CC1
= V
CC2
= 4.5 to 7.0V
V
T
A
Operating ambient temperature range
NE Grade
SA Grade
0 to +70
-40 to +85
C
C
T
J
Operating junction temperature range
NE Grade
SA Grade
0 to +90
-40 to +105
C
C
DC ELECTRICAL CHARACTERISTICS
T
A
= 25
o
C, V
CC1
= V
CC2
= +5V, V
AGC
= 1.0V, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
LIMITS
UNIT
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
I
CC
Supply current
DC tested
38
43
48
mA
I
CC
Supply current
Over temperature
1
30
55
mA
A
V
Voltage gain (single-ended in/single-ended out)
DC tested, R
L
= 10k
17
19
21
dB
A
V
Voltage gain (single-ended in/single-ended out)
Over temperature
1
16
22
dB
A
V
Voltage gain (single-ended in/differential out)
DC tested, R
L
= 10k
23
25
27
dB
A
V
Voltage gain (single-ended in/differential out)
Over temperature
1
22
28
dB
R
IN
Input resistance (single-ended)
DC tested at
50
A
0.9
1.2
1.5
k
R
IN
Input resistance (single-ended)
Over temperature
1
0.8
1.7
k
R
OUT
Output resistance (single-ended)
DC tested at
1mA
40
60
75
R
OUT
Output resistance (single-ended)
Over temperature
1
35
90
V
OS
Output offset voltage (output referred)
+20
100
mV
V
OS
Output offset voltage (output referred)
Over temperature
1
250
mV
V
IN
DC level on inputs
1.6
2.0
2.4
V
V
IN
DC level on inputs
Over temperature
1
1.4
2.6
V
V
OUT
DC level on outputs
1.9
2.4
2.9
V
V
OUT
DC level on outputs
Over temperature
1
1.7
3.1
V
PSRR
Output offset supply rejection ratio
20
45
dB
PSRR
(output referred)
Over temperature
1
15
dB
V
BG
Bandgap reference voltage
4.5V<V
CC
<7V
R
BG
= 10k
1.2
1.32
1.45
V
BG
g p
g
Over temperature
1
1.1
1.55
Philips Semiconductors
Product specification
NE/SA5209
Wideband variable gain amplifier
1990 Aug 20
4
DC ELECTRICAL CHARACTERISTICS
T
A
= 25
o
C, V
CC1
= V
CC2
= +5.0V, V
AGC
= 1.0V, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
LIMITS
UNIT
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
R
BG
Bandgap loading
Over temperature
1
2
10
k
V
AGC
AGC DC control voltage range
Over temperature
1
0-1.3
V
I
BAGC
AGC pin DC bias current
0V<V
AGC
<1.3V
-0.7
-6
A
I
BAGC
AGC pin DC bias current
Over temperature
1
-10
A
NOTES:
1. "Over Temperature Range" testing is as follows:
NE is 0 to +70
C
SA is -40 to +85
C
At the time of this data sheet release, the D package over-temperature data sheet limits are guaranteed via guardbanded room temperature
testing only.
AC ELECTRICAL CHARACTERISTICS
T
A
= 25
o
C, V
CC1
= V
CC2
= +5.0V, V
AGC
= 1.0V, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
LIMITS
UNIT
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
BW
-3dB bandwidth
600
850
MHz
BW
-3dB bandwidth
Over temperature
1
500
MHz
GF
Gain flatness
DC - 500MHz
+0.4
dB
GF
Gain flatness
Over temperature
1
+0.6
dB
V
IMAX
Maximum input voltage swing (single-ended) for
linear operation
2
200
mV
P-P
V
OMAX
Maximum output voltage swing (single-ended)
R
L
= 50
400
mV
P-P
V
OMAX
for linear operation
2
R
L
= 1k
1.9
V
P-P
NF
Noise figure (unmatched configuration)
R
S
= 50
, f = 50MHz
9.3
dB
V
IN-EQ
Equivalent input noise voltage spectral density
f = 100MHz
2.5
nV/
Hz
S12
Reverse isolation
f = 100MHz
-60
dB
G/
V
CC
Gain supply sensitivity (single-ended)
0.3
dB/V
G/
T
Gain temperature sensitivity
R
L
= 50
0.013
dB/
C
C
IN
Input capacitance (single-ended)
2
pF
BW
AGC
-3dB bandwidth of gain control function
20
MHz
P
O-1dB
1dB gain compression point at output
f = 100MHz
-3
dBm
P
I-1dB
1dB gain compression point at input
f = 100MHz, V
AGC
=0.1V
-10
dBm
IP3
OUT
Third-order intercept point at output
f = 100MHz, V
AGC
>0.5V
+13
dBm
IP3
IN
Third-order intercept point at input
f = 100MHz, V
AGC
<0.5V
+5
dBm
G
AB
Gain match output A to output B
f = 100MHz, V
AGC
= 1V
0.1
dB
NOTE:
1. "Over Temperature Range" testing is as follows:
NE is 0 to +70
C
SA is -40 to +85
C
At the time of this data sheet release, the D package over-temperature data sheet limits are guaranteed via guardbanded room temperature
testing only.
2. With R
L
> 1k
, overload occurs at input for single-ended gain < 13dB and at output for single-ended gain > 13dB. With R
L
= 50
, overload
occurs at input for single-ended gain < 6dB and at output for single-ended gain > 6dB.
Philips Semiconductors
Product specification
NE/SA5209
Wideband variable gain amplifier
1990 Aug 20
5
NE5209 APPLICATIONS
The NE5209 is a wideband variable gain amplifier (VGA) circuit
which finds many applications in the RF, IF and video signal
processing areas. This application note describes the operation of
the circuit and several applications of the VGA. The simplified
equivalent schematic of the VGA is shown in Figure 2. Transistors
Q1-Q6 form the wideband Gilbert multiplier input stage which is
biased by current source I1. The top differential pairs are biased
from a buffered and level-shifted signal derived from the V
AGC
input
and the RF input appears at the lower differential pair. The circuit
topology and layout offer low input noise and wide bandwidth. The
second stage is a differential transimpedance stage with current
feedback which maintains the wide bandwidth of the input stage.
The output stage is a pair of emitter followers with 50
output
impedance. There is also an on-chip bandgap reference with
buffered output at 1.3V, which can be used to derive the gain control
voltage.
Both the inputs and outputs should be capacitor coupled or DC
isolated from the signal sources and loads. Furthermore, the two
inputs should be DC isolated from each other and the two outputs
should likewise be DC isolated from each other. The NE5209 was
designed to provide optimum performance from a 5V power source.
However, there is some range around this value (4.5 - 7V) that can
be used.
The input impedance is about 1k
. The main advantage to a
differential input configuration is to provide the balun function.
Otherwise, there is an advantage to common mode rejection, a
specification that is not normally important to RF designs. The
source impedance can be chosen for two different performance
characteristics: Gain, or noise performance. Gain optimization will
be realized if the input impedance is matched to about 1k
. A 4:1
balun will provide such a broadband match from a 50
source.
Noise performance will be optimized if the input impedance is
matched to about 200
. A 2:1 balun will provide such a broadband
match from a 50
source. The minimum noise figure can then be
expected to be about 7dB. Maximum gain will be about 23dB for a
single-ended output. If the differential output is used and properly
matched, nearly 30dB can be realized. With gain optimization, the
noise figure will degrade to about 8dB. With no matching unit at the
input, a 9dB noise figure can be expected from a 50
source. If the
source is terminated, the noise figure will increase to about 15dB.
All these noise figures will occur at maximum gain.
The NE5209 has an excellent noise figure vs gain relationship. With
any VGA circuit, the noise performance will degrade with decreasing
gain. The 5209 has about a 1.2dB noise figure degradation for
each 2dB gain reduction. With the input matched for optimum gain,
the 8dB noise figure at 23dB gain will degrade to about a 20dB
noise figure at 0dB gain.
The NE5209 also displays excellent linearity between voltage gain
and control voltage. Indeed, the relationship is of sufficient linearity
that high fidelity AM modulation is possible using the NE5209. A
maximum control voltage frequency of about 20MHz permits video
baseband sources for AM.
A stabilized bandgap reference voltage is made available on the
NE5209 (Pin 7). For fixed gain applications this voltage can be
resistor divided, and then fed to the gain control terminal (Pin 8).
Using the bandgap voltage reference for gain control produces very
stable gain characteristics over wide temperature ranges. The gain
setting resistors are not part of the RF signal path, and thus stray
capacitance here is not important.
The wide bandwidth and excellent gain control linearity make the
NE5209 VGA ideally suited for the automatic gain control (AGC)
function in RF and IF processing in cellular radio base stations,
Direct Broadcast Satellite (DBS) decoders, cable TV systems, fiber
optic receivers for wideband data and video, and other radio
communication applications. A typical AGC configuration using the
NE5209 is shown in Figure 3. Three NE5209s are cascaded with
appropriate AC coupling capacitors. The output of the final stage
drives the full-wave rectifier composed of two UHF Schottky diodes
BAT17 as shown. The diodes are biased by R1 and R2 to V
CC
such
that a quiescent current of about 2mA in each leg is achieved. An
NE5230 low voltage op amp is used as an integrator which drives
the V
AGC
pin on all three NE5209s. R3 and C3 filter the high
frequency ripple from the full-wave rectified signal. A voltage
divider is used to generate the reference for the non-inverting input
of the op amp at about 1.7V. Keeping D3 the same type as D1 and
D2 will provide a first order compensation for the change in Schottky
voltage over the operating temperature range and improve the AGC
performance. R6 is a variable resistor for adjustments to the op
amp reference voltage. In low cost and large volume applications
this could be replaced with a fixed resistor, which would result in a
slight loss of the AGC dynamic range. Cascading three NE5209s
will give a dynamic range in excess of 60dB.
The NE5209 is a very user-friendly part and will not oscillate in most
applications. However, in an application such as with gains in
excess of 60dB and bandwidth beyond 100MHz, good PC board
layout with proper supply decoupling is strongly recommended.
Q1
Q2
VCC
Q3
Q4
Q5
Q6
VBG
BANDGAP
REFERENCE
OUTA
OUTB
Q8
Q7
A1
VAGC
01V
I1
I2
I3
50
50
R1
R2
R3
R4
INA
INB
+
SR00238
Figure 2. Equivalent Schematic of the VGA
Philips Semiconductors
Product specification
NE/SA5209
Wideband variable gain amplifier
1990 Aug 20
6
RF/IF
INPUT
AGC
OUTPUT
BAT 17
BAT 17
5209
5209
5209
R4
C4
D1
D2
D3
R6
R1
R2
L1
L2
R3
C3
R5
5230
+
VCC
VCC
R1 = R2 = 3.9k
R3 = 360
R4 = 62k
R5 = 100
R6 = 1k pot
2
fL1
=
10k
L1
=
L2
SR00239
Figure 3. AGC Configuration Using Cascaded NE5209s
1
2
3
4
5
6
7
8
9
10
11
12
13
14
16
15
OUTA
VCC1
INA
GND2
VCC2
GND1
GND1
GND2
INB
GND1
VBG
VAGC
GND2
OUTB
GND2
GND2
V
OUTA
OUTB
VCC
5VDC
+
VIN
10
F
0.1
F
0.1
F
0.1
F
0.1
F
0.1
F
0.1
F
50
(16-Pin SO, 150-mil wide)
SR00240
Figure 4. VGA AC Evaluation Board
This circuit will exhibit about a 7dB
noise figure with approximately
22dB gain.
50
50
50
+5V
+1V
MINI CIRCUITS
2:1 BALUN
OR SIMILAR
SOURCE
OUTPUT
5209
1 : 2
VAGC
SR00241
Figure 5. Broadband Noise Optimization
Philips Semiconductors
Product specification
NE/SA5209
Wideband variable gain amplifier
1990 Aug 20
7
This circuit will exhibit about a 7dB
noise figure with approximately
22dB gain. Narrowband circuits
have the advantage of greater stabil-
ity, particularly when multiple de-
vices are cascaded.
50
50
50
+5V
+1V
2:1 TURNS RATIO
LC TUNED
TRANSFORMER
SOURCE
OUTPUT
5209
VAGC
SR00242
Figure 6. Narrowband Noise Optimization
This circuit will exhibit about an 8dB
noise figure with 24dB gain.
50
50
50
+5V
+1V
MINI CIRCUITS
4:1 BALUN OR
EQUIVALENT
SOURCE
OUTPUT
5209
1 : 4
VAGC
SR00243
Figure 7. Broadband Gain Optimization
This circuit will exhibit approximate-
ly an 8dB noise figure and 25dB gain.
50
50
50
+5V
+1V
4:1 TURNS RATIO
LC TUNED
TRANSFORMER
SOURCE
OUTPUT
5209
VAGC
SR00244
Figure 8. Narrowband Gain Optimization
The noise figure of this configuration
will be approximately 15dB.
50
50
50
+5V
+1V
SOURCE
OUTPUT
5209
50
VAGC
SR00245
Figure 9. Simple Amplifier Configuration
With the 50
source left untermi-
nated, the noise figure is 9dB.
50
50
50
+5V
+1V
SOURCE
OUTPUT
5209
VAGC
SR00246
Figure 10. Unterminated Configuration
Philips Semiconductors
Product specification
NE/SA5209
Wideband variable gain amplifier
1990 Aug 20
8
50
50
50
+5V
SOURCE
OUTPUT
5209
Gain = 19dB + 20log
10
V
AGC
and is in units of Volts, for V
AGC
1V
where V
AGC
=
R
2
R
1
)
R
2
V
BG
VBG
VAGC
R1
R2
SR00247
Figure 11. User-Programmable Fixed Gain Block
All harmonic distortion products will be
at least -50dBc over the audio spectrum.
50
50
50
+5V
SOURCE
OUTPUT
5209
+5V
RF INPUT
FULL CARRIER
AM (DSB)
MODULATING
SIGNAL
.5V
R
9R
VAGC
SR00248
Figure 12. AM Modulator
The high input impedance to the NE5209 makes matching
to crystal filters relatively easy. The total delta gain of this
system will approach 80dB. IF frequencies well into the UHF
region can be configured with this type of architecture.
50
5209
CRYSTAL
GAIN CONTROL
SIGNAL
FILTER
50
OUTPUT
5209
5209
VAGC
VAGC
VAGC
SR00249
Figure 13. Receiver AGC IF Gain
RL
5209
RL
VS
RS
RT
RT
VAGC
VCC (+5V, unless otherwise noted)
SR00250
Figure 14. Test Set-up 1 (Used for all Graphs)
Philips Semiconductors
Product specification
NE/SA5209
Wideband variable gain amplifier
1990 Aug 20
9
S Magnitude
10
0
0.6
1
0.8
0.4
0.2
VCC = 5.5V
VCC = 5.0V
VCC = 4.5V
VAGC (V)
21
9
8
7
6
5
4
3
2
1
0
1.2
T = 25
C
RS = RL = 50
Rt =
f = 10MHz
DC Tested
See test-setup 1
SR00251
Figure 15. Gain vs V
AGC
and V
CC
RS = RL = 50
Rt =
See test-setup 1
0
0.2
0.4
0.6
0.8
VAGC (V)
10
9
8
7
6
5
4
3
2
1
0
1
1.2
-55
C
+25
C
+125
C
S Magnitude
21
SR00253
Figure 16. Insertion Gain vs V
AGC
and Temperature
20
Differential V
oltage Gain (dB)
Temperature (
C)
100
50
150
100
0
50
5.5V
5.0V
4.5V
19.5
19
18.5
18
17.5
17
16.5
16
15.5
15
RS = 0
RL =
Rt =
VAGC = 1.1V
See Test Setup 1
SR00252
Figure 17. Voltage Gain vs Temperature and V
CC
Supply Current (mA)
100
50
0
50
100
55
50
45
40
35
30
25
20
150
VCC = 7.0V
See test-setup 1
Temperature (
C)
VCC = 6.0V
VCC = 5.0V
VCC = 4.5V
SR00254
Figure 18. Supply Current vs Temperature and V
CC
Philips Semiconductors
Product specification
NE/SA5209
Wideband variable gain amplifier
1990 Aug 20
10
50
1.5
100
50
0
150
100
VCC = 7.0V
VCC = 4.5V
Temperature (
C)
Input Resistance (k )
1.45
1.4
1.35
1.3
1.25
1.2
1.15
1.1
1.05
1
DC Tested
See test-setup 1
SR00255
Figure 19. Input Resistance vs Temperature
2.5
100
50
150
100
Temperature (
C)
Input Bias V
oltage (V)
0
50
2
1.5
1
0.5
0
VCC = 7.0V
VCC = 6.0V
VCC = 5.0V
VCC = 4.5V
DC Tested
See test-setup 1
SR00257
Figure 20. Input Bias Voltage vs Temperature
Output DC V
oltage
5
100
50
150
100
0
50
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
Temperature (
C)
DC Tested
See test-setup 1
VCC = 7.0V
VCC = 6.0V
VCC = 5.0V
VCC = 4.5V
SR00256
Figure 21. Output Bias Voltage vs Temperature and V
CC
DC OUTPUT SWING (V)
100
50
150
2.5
Temperature (
C)
0
50
100
2
1.5
1
0.5
0
VAGC = 1.1V
RL = 10k
DC Tested
See test-setup 1
SR00258
Figure 22. DC Output Swing vs Temperature
Philips Semiconductors
Product specification
NE/SA5209
Wideband variable gain amplifier
1990 Aug 20
11
20
10
1500
100
S Magnitude (dB)
1.1V
0.8V
0.4V
200mV
100mV
50mV
25mV
21
10
0
10
20
30
1000
Frequency (MHz)
T = 25
C
RS = RL =
50
Rt = 50
See Test
Setup 1
SR00259
Figure 23. Insertion Gain vs Frequency and V
AGC
15
10
100
1500
1000
Frequency (MHz)
10
5
0
5
5.5V
4.5V
S Magnitude (dB)
21
T = 25
C
VAGC = 1.1V
RS = RL = 50
Rt = 50
See Test Setup 1
SR00261
Figure 24. Insertion Gain vs Frequency and V
CC
16
100
50
150
100
Temperature (
C)
S Magnitude (dB)
21
14
12
10
8
6
4
2
0
0
50
T = 25
C
VAGC = 1.1V
Rt = 50
f = 10MHz
See Test Setup 1
VCC = 7.0V
VCC = 6.0V
VCC = 5.0V
VCC = 4.5V
SR00260
Figure 25. Insertion Gain vs Temperature and V
CC
0
10
100
1500
1000
Frequency (MHz)
S (dB)
22
5
10
15
20
25
25
C
-55
C
125
C
RS = RL = 50
Rt = 50
See Test Setup 1
SR00262
Figure 26. Output Return Loss vs Frequency
Philips Semiconductors
Product specification
NE/SA5209
Wideband variable gain amplifier
1990 Aug 20
12
S Magnitude (dB)
1500
0
10
100
1000
12
Frequency (MHz)
10
20
30
40
50
60
70
80
90
T = 25
C
R
S
= RL = 50
R
t
= 50
See test-setup 1
SR00263
Figure 27. Reverse Isolation vs Frequency
P
(dBm)
0
0.2
1
0
0.4
0.6
0.8
1
5
10
15
20
25
30
VAGC (V)
OUTPUT
INPUT
T = 25
C
R
S
= RL = 50
Rt = 50
f = 100MHz
See test-setup 1
SR00265
Figure 28. 1dB Gain Compression vs V
AGC
IM Intercept (dBm)
0
0.2
0.4
0.6
0.8
15
10
5
0
5
1
T = 25
C
RS = RL = 50
Rt = 50
f = 100MHz
See test-setup 1
VAGC (V)
OUTPUT
INPUT
3
SR00264
Figure 29. Third-Order Intermodulation Intercept vs V
AGC
NF (dB)
0
0.2
1
20
VAGC (V)
T = 25
C
R
S
= RL = 50
Rt =
f = 50MHz
See test-setup 1
0.4
0.6
0.8
18
16
14
12
10
8
6
4
2
0
SR00266
Figure 30. Noise Figure vs V
AGC
Philips Semiconductors
Product specification
NE/SA5209
Wideband variable gain amplifier
1990 Aug 20
13
NF (dB)
10
100
1000
16
T = 25
C
VAGC = 1.1V
R
S
= RL = 50
R
t
=
on INA
See test-setup 1
Frequency (MHz)
0
Termination
on INB
50
Termination
on INB
14
12
10
8
6
4
2
0
SR00267
Figure 31. Noise Figure vs Frequency
1.4
100
50
150
100
Temperature (
C)
Bandgap V
oltage
(V)
0
50
1.35
1.3
1.25
1.2
1.15
1.1
1.05
1
Bandgap Load = 2k
VCC = 7.0V
VCC = 6.0V
VCC = 5.0V
VCC = 4.5V
SR00269
Figure 32. Bandgap Voltage vs Temperature and V
CC
S Magnitude (dB)
12
10
8
6
4
2
0
60
10
40
90
140
Temperature (
C)
21
RS = RL = 50
Rt = 50
R1 = R2 = 10k
f = 100MHz
See Figure 10
SR00268
Figure 33. Fixed Gain vs Temperature
TOP VIEW - COMPONENT SIDE
OUT
B
OUT
A
GND
+V
CC
IN
B
IN
A
GND
AGC
VBG
NE5209
TOP VIEW - SOLDER SIDE
SR00270
Figure 34. VGA AC Evaluation Board Layout
Philips Semiconductors
Product specification
NE/SA5209
Wideband variable gain amplifier
1990 Aug 20
14
TOP VIEW - COMPONENT SIDE
TOP VIEW - SOLDER SIDE
+VCC
OUTA
OUTB
INA
INB
GND
NE5209
SR00271
Figure 35. AGC Configuration Using Cascaded NE5209s - Layout
TOP VIEW - SOLDER SIDE
TOP VIEW - COMPONENT SIDE
TOP VIEW - SOLDER SIDE
AMP10101 / NE5219SO/DN8.90
SR00272
Figure 36. VGA AC Evaluation Board Layout (DIP Package)
Philips Semiconductors
Product specification
NE/SA5209
Wideband variable gain amplifier
1990 Aug 20
15
Philips Semiconductors and Philips Electronics North America Corporation reserve the right to make changes, without notice, in the products,
including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright,
or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified. Applications that are described herein for any of these products are for illustrative purposes
only. Philips Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing
or modification.
LIFE SUPPORT APPLICATIONS
Philips Semiconductors and Philips Electronics North America Corporation Products are not designed for use in life support appliances, devices,
or systems where malfunction of a Philips Semiconductors and Philips Electronics North America Corporation Product can reasonably be expected
to result in a personal injury. Philips Semiconductors and Philips Electronics North America Corporation customers using or selling Philips
Semiconductors and Philips Electronics North America Corporation Products for use in such applications do so at their own risk and agree to fully
indemnify Philips Semiconductors and Philips Electronics North America Corporation for any damages resulting from such improper use or sale.
This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips
Semiconductors reserves the right to make changes at any time without notice in order to improve design
and supply the best possible product.
Philips Semiconductors and Philips Electronics North America Corporation
register eligible circuits under the Semiconductor Chip Protection Act.
Copyright Philips Electronics North America Corporation 1993
All rights reserved. Printed in U.S.A.
Philips Semiconductors
811 East Arques Avenue
P.O. Box 3409
Sunnyvale, California 940883409
Telephone 800-234-7381
DEFINITIONS
Data Sheet Identification
Product Status
Definition
Objective Specification
Preliminary Specification
Product Specification
Formative or in Design
Preproduction Product
Full Production
This data sheet contains the design target or goal specifications for product development. Specifications
may change in any manner without notice.
This data sheet contains Final Specifications. Philips Semiconductors reserves the right to make changes
at any time without notice, in order to improve design and supply the best possible product.
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