Document Outline
- DESCRIPTION
- FEATURES
- PIN CONFIGURATIONS
- ORDERING INFORMATION
- EQUIVALENT SCHEMATIC (EACH AMPLIFIER)
- ABSOLUTE MAXIMUM RATINGS
- DC ELECTRICAL CHARACTERISTICS
- AC ELECTRICAL CHARACTERISTICS
- ELECTRICAL CHARACTERISTICS
- TYPICAL PERFORMANCE CHARACTERISTICS
- TEST CIRCUITS
- PACKAGE OUTLINE
Philips
Semiconductors
Product data
Supersedes data of 1997 Sep 29
NE/SA/SE5532/5532A
Internally-compensated dual low noise
operational amplifier
2001 Aug 03
INTEGRATED CIRCUITS
Philips Semiconductors
Product data
NE/SA/SE5532/5532A
Internally-compensated dual low noise
operational amplifier
2
2001 Aug 03
853-0949 26836
DESCRIPTION
The 5532 is a dual high-performance low noise operational amplifier.
Compared to most of the standard operational amplifiers, such as
the 1458, it shows better noise performance, improved output drive
capability and considerably higher small-signal and power
bandwidths.
This makes the device especially suitable for application in
high-quality and professional audio equipment, instrumentation and
control circuits, and telephone channel amplifiers. The op amp is
internally compensated for gains equal to one. If very low noise is of
prime importance, it is recommended that the 5532A version be
used because it has guaranteed noise voltage specifications.
FEATURES
Small-signal bandwidth: 10 MHz
Output drive capability: 600
, 10 V
RMS
Input noise voltage: 5 nV/
Hz (typical)
DC voltage gain: 50000
AC voltage gain: 2200 at 10 kHz
Power bandwidth: 140 kHz
Slew rate: 9 V/
s
Large supply voltage range:
3 to
20 V
Compensated for unity gain
PIN CONFIGURATIONS
N, D8 Packages
D Package
1
NOTE:
1. SOL and non-standard pinout.
7
6
5
4
3
2
1
B
A
V+
OUTPUT B
INVERTING INPUT B
NON-INVERTING INPUT B
OUTPUT A
INVERTING INPUT A
NON-INVERTING INPUT A
V-
TOP VIEW
INA
+INA
NC
VCC
NC
NC
+INB
INB
NC
NC
NC
OUTA
1
2
3
4
5
6
7
8
9
10
11
12
13
14
16
15
+VCC
OUTB
NC
NC
TOP VIEW
SL00332
8
Figure 1. Pin Configurations
ORDERING INFORMATION
DESCRIPTION
TEMPERATURE RANGE
ORDER CODE
DWG #
8-Pin Small Outline Package (SO)
0
C to 70
C
NE5532AD8
SOT96-1
8-Pin Plastic Dual In-Line Package (DIP)
0
C to 70
C
NE5532AN
SOT97-1
16-Pin Plastic Small Outline Large (SOL) Package
0
C to 70
C
NE5532D
SOT162-1
8-Pin Small Outline Package (SO)
0
C to 70
C
NE5532D8
SOT96-1
8-Pin Plastic Dual In-Line Package (DIP)
0
C to 70
C
NE5532N
SOT97-1
8-Pin Plastic Dual In-Line Package (DIP)
40
C to +85
C
SA5532N
SOT97-1
8-Pin Small Outline Package (SO)
55
C to +125
C
SE5532AD8
SOT96-1
16-Pin Plastic Dual In-Line Package (DIP)
55
C to +125
C
SE5532N
SOT38-4
Philips Semiconductors
Product data
NE/SA/SE5532/5532A
Internally-compensated dual low noise
operational amplifier
2001 Aug 03
3
EQUIVALENT SCHEMATIC (EACH AMPLIFIER)
+
_
SL00333
Figure 2. Equivalent Schematic (Each Amplifier)
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
RATING
UNIT
V
S
Supply voltage
22
V
V
IN
Input voltage
V
SUPPLY
V
V
DIFF
Differential input voltage
1
0.5
V
T
amb
Operating temperature range
NE5532/A
0 to 70
C
SA5532
40 to +85
C
SE5532/A
55 to +125
C
T
stg
Storage temperature
65 to +150
C
T
j
Junction temperature
150
C
P
D
Maximum power dissipation,
T
amb
= 25
C (still-air)
2
8
D8 package
780
mW
8
N package
1200
mW
16
D package
1200
mW
T
sld
Lead soldering temperature (10 sec max)
230
C
NOTES:
1. Diodes protect the inputs against over-voltage. Therefore, unless current-limiting resistors are used, large currents will flow if the differential
input voltage exceeds 0.6V. Maximum current should be limited to
10 mA.
2. Thermal resistances of the above packages are as follows:
N package at 100
C/W
D package at 105
C/W
D8 package at 160
C/W
Philips Semiconductors
Product data
NE/SA/SE5532/5532A
Internally-compensated dual low noise
operational amplifier
2001 Aug 03
4
DC ELECTRICAL CHARACTERISTICS
T
amb
= 25
C; V
S
=
15 V, unless otherwise specified.
1, 2, 3
SYMBOL
PARAMETER
TEST CONDITIONS
SE5532/A
NE5532/A, SA5532
UNIT
SYMBOL
PARAMETER
TEST CONDITIONS
Min
Typ
Max
Min
Typ
Max
UNIT
V
OS
Offset voltage
0.5
2
0.5
4
mV
Over temperature
3
5
mV
V
OS
/
T
5
5
V/
C
I
OS
Offset current
100
10
150
nA
Over temperature
200
200
nA
I
OS
/
T
200
200
pA/
C
I
B
Input current
200
400
200
800
nA
Over temperature
700
1000
nA
I
B
/
T
5
5
nA/
C
8
10.5
8
16
mA
I
CC
Supply current
Over temperature
13
mA
V
CM
Common-mode input range
12
13
12
13
V
CMRR
Common-mode rejection ratio
80
100
70
100
dB
PSRR
Power supply rejection ratio
10
50
10
100
V/V
R
L
2 k
; V
O
=
10 V
50
100
25
100
V/mV
A
VOL
Large-signal voltage gain
Over temperature
25
15
V/mV
A
VOL
Large-signal voltage gain
R
L
600
; V
O
=
10 V
40
50
15
50
V/mV
Over temperature
20
10
V/mV
R
L
600
12
13
12
13
Over temperature
10
12
10
12
V
OUT
Output swing
R
L
600
; V
S
=
18 V
15
16
15
16
V
V
OUT
Out ut swing
Over temperature
12
14
12
14
V
R
L
2 k
13
13.5
13
13.5
Over temperature
12
12.5
10
12.5
R
IN
Input resistance
30
300
30
300
k
I
SC
Output short circuit current
10
38
60
10
38
60
mA
NOTES:
1. Diodes protect the inputs against overvoltage. Therefore, unless current-limiting resistors are used, large currents will flow if the differential
input voltage exceeds 0.6 V. Maximum current should be limited to
10 mA.
2. For operation at elevated temperature, derate packages based on the package thermal resistance.
3. Output may be shorted to ground at V
S
=
15 V, T
amb
= 25
C. Temperature and/or supply voltages must be limited to ensure dissipation
rating is not exceeded.
AC ELECTRICAL CHARACTERISTICS
T
amb
= 25
C; V
S
=
15 V, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
NE/SE5532/A, SA5532
UNIT
SYMBOL
PARAMETER
TEST CONDITIONS
Min
Typ
Max
UNIT
R
OUT
Output resistance
A
V
= 30 dB Closed-loop
f = 10 kHz, R
L
= 600
0.3
Voltage-follower
Overshoot
V
IN
= 100 mV
P-P
10
%
C
L
= 100 pF; R
L
= 600
A
V
Gain
f = 10 kHz
2.2
V/mV
GBW
Gain bandwidth product
C
L
= 100 pF; R
L
= 600
10
MHz
SR
Slew rate
9
V/
s
V
OUT
=
10 V
140
kHz
Power bandwidth
V
OUT
=
14 V; R
L
= 600
,
100
kHz
V
CC
=
18V
Philips Semiconductors
Product data
NE/SA/SE5532/5532A
Internally-compensated dual low noise
operational amplifier
2001 Aug 03
5
ELECTRICAL CHARACTERISTICS
T
amb
= 25
C; V
S
=
15 V, unless otherwise specified.
SYMBOL
PARAMETER
TEST CONDITIONS
NE/SE5532
NE/SA/SE5532A
UNIT
SYMBOL
PARAMETER
TEST CONDITIONS
Min
Typ
Max
Min
Typ
Max
UNIT
V
NOISE
Input noise voltage
f
O
= 30 Hz
8
8
12
nV/
Hz
f
O
= 1 kHz
5
5
6
nV/
Hz
I
NOISE
Input noise current
f
O
= 30 Hz
2.7
2.7
pA/
Hz
f
O
= 1 kHz
0.7
0.7
pA/
Hz
Channel separation
f = 1 kHz; R
S
= 5 k
110
110
dB
TYPICAL PERFORMANCE CHARACTERISTICS
GAIN (dB)
GAIN (dB)
TYPICAL VALUES
10 10
2
10
3
10
4
10
5
10
6
10
7
120
80
40
0
-40
f (Hz)
TYPICAL VALUES
80
60
40
20
0
-55
-25
0
25
50
75
100 +125
-55
-25
0
25
50
75
100 +125
1,4
1,2
0,8
0,4
0
30
20
10
0
0
10
20
Tamb (
o
C)
TYP
IO
(mA)
II
(mA)
VIN (V)
Vp; VN (V)
Open-Loop Frequency
Response
Output Short-Circuit Current
Input Bias Current
Input Commom-Mode
Voltage Range
TYPICAL VALUES
60
40
20
0
-20
10
3
10
4
10
5
10
6
10
7
10
8
f (Hz)
RF = 10 k
; RE = 100
RF = 9 k
; RE = 1 k
RF = 1 k
; RE =
Closed-Loop Frequency
Response
VS =
15 V
TYPICAL VALUES
10
2
10
3
10
4
10
5
10
6
10
7
40
30
20
10
0
f (Hz)
(V)
Vo(p-p)
Large-Signal Frequency
Response
(nV
Hz)
IO = 0
0
10
20
0
2
4
6
102
10
1
101
102
10
10
2
10
3
10
4
f (Hz)
TYP
TYP
IP
IN
(mA)
Vp; VN (V)
Supply Current
Input Noise Voltage Density
Tamb (
o
C)
SL00334
VS =
15 V
VS =
15 V
Figure 3. Typical Performance Characteristics
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