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Электронный компонент: PBYR1045X

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Philips Semiconductors
Product specification
Rectifier diodes
PBYR1045F, PBYR1045X series
Schottky barrier
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
Fast switching
V
R
= 40 V/ 45 V
Reverse surge capability
High thermal cycling performance
I
F(AV)
= 10 A
Isolated mounting tab
V
F
0.59 V
GENERAL DESCRIPTION
Schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended for use as output rectifiers
in low voltage, high frequency switched mode power supplies.
The PBYR1045F series is supplied in the SOD100 package.
The PBYR1045X series is supplied in the SOD113 package.
PINNING
SOD100
SOD113
PIN
DESCRIPTION
1
cathode
2
anode
tab
isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
PBYR10
40F
45F
PBYR10
40X
45X
V
RRM
Peak repetitive reverse
-
40
45
V
voltage
V
RWM
Working peak reverse
-
40
45
V
voltage
V
R
Continuous reverse voltage
T
hs
95 C
-
40
45
V
I
F(AV)
Average rectified forward
square wave;
= 0.5; T
hs
112 C
-
10
A
current
I
FRM
Repetitive peak forward
square wave;
= 0.5; T
hs
112 C
-
20
A
current
I
FSM
Non-repetitive peak forward
t = 10 ms
-
100
A
current
t = 8.3 ms
-
110
A
sinusoidal; T
j
= 125 C prior to
surge; with reapplied V
RRM(max)
I
RRM
Peak repetitive reverse
pulse width and repetition rate
-
1
A
surge current
limited by T
j max
T
j
Operating junction
-
150
C
temperature
T
stg
Storage temperature
- 65
175
C
k
a
1
2
1
2
case
1
2
case
July 1998
1
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
PBYR1045F, PBYR1045X series
Schottky barrier
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
V
isol
Peak isolation voltage from
SOD100 package; R.H.
65%; clean and
-
-
1500
V
both terminals to external
dustfree
heatsink
V
isol
R.M.S. isolation voltage from SOD113 package; f = 50-60 Hz;
-
-
2500
V
both terminals to external
sinusoidal waveform; R.H.
65%; clean
heatsink
and dustfree
C
isol
Capacitance from pin 1 to
f = 1 MHz
-
10
-
pF
external heatsink
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
R
th j-hs
Thermal resistance junction
with heatsink compound
-
-
5.5
K/W
to heatsink
R
th j-a
Thermal resistance junction
in free air
-
55
-
K/W
to ambient
ELECTRICAL CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
V
F
Forward voltage
I
F
= 10 A; T
j
= 125C
-
0.5
0.59
V
I
F
= 20 A; T
j
= 125C
-
0.69
0.75
V
I
F
= 20 A
-
0.65
0.87
V
I
R
Reverse current
V
R
= V
RWM
-
0.2
1.3
mA
V
R
= V
RWM
; T
j
= 100C
-
22
35
mA
C
d
Junction capacitance
V
R
= 5 V; f = 1 MHz, T
j
= 25C to 125C
-
350
-
pF
July 1998
2
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
PBYR1045F, PBYR1045X series
Schottky barrier
Fig.1. Maximum forward dissipation P
F
= f(I
F(AV)
);
square current waveform where I
F(AV)
=I
F(RMS)
x
D.
Fig.2. Maximum forward dissipation P
F
= f(I
F(AV)
);
sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Fig.3. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.4. Typical reverse leakage current; I
R
= f(V
R
);
parameter T
j
Fig.5. Typical junction capacitance; C
d
= f(V
R
);
f = 1 MHz; T
j
= 25C to 125 C.
Fig.6. Transient thermal impedance; Z
th j-hs
= f(t
p
).
0
5
10
15
0
2
4
6
8
10
D = 1.0
0.5
0.2
0.1
PBYR1045X
Rs = 0.016 Ohms
Vo = 0.41 V
Average forward current, IF(AV) (A)
Forward dissipation, PF (W)
Ths(max) (C)
150
139
128
117
106
95
T
I
D =
t
p
t
p
T
t
0
25
50
100
10
1
0.1
0.01
Reverse current, IR (mA)
Reverse voltage, VR (V)
PBYR1045
50 C
75 C
100 C
125 C
Tj = 25 C
0
2
4
6
8
10
0
1
2
3
4
5
6
7
8
a = 1.57
1.9
2.2
2.8
4
PBYR1045X
Rs = 0.016 Ohms
Vo = 0.41 V
Average forward current, IF(AV) (A)
Forward dissipation, PF (W)
Ths(max) (C)
150
139
128
117
106
1
10
100
10
1000
100
Cd / pF
VR / V
PBYR1045
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
10
20
30
40
50
PBYR1045X
Forward voltage, VF (V)
Forward current, IF (A)
Tj = 25 C
Tj = 125 C
max
typ
0.01
0.1
1
10
PBYR1045X
1us
10us
100us
1ms
10ms
100ms
1s
10s
pulse width, tp (s)
Transient thermal impedance, Zth j-hs (K/W)
D =
t
p
t
p
T
T
P
t
D
July 1998
3
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
PBYR1045F, PBYR1045X series
Schottky barrier
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.7. SOD100; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10.2
max
5.7
max
3.2
3.0
0.9
0.5
4.4
max
2.9 max
4.4
4.0
seating
plane
7.9
7.5
17
max
0.55 max
1.3
13.5
min
5.08
0.9
0.7
M
0.4
top view
3.5 max
not tinned
4.4
k
a
July 1998
4
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
PBYR1045F, PBYR1045X series
Schottky barrier
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.8. SOD113; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10.3
max
3.2
3.0
4.6
max
2.9 max
2.8
seating
plane
6.4
15.8
max
0.6
2.5
2.54
5.08
1
2
3 max.
not tinned
3
0.5
2.5
0.9
0.7
M
0.4
15.8
max.
19
max.
13.5
min.
Recesses (2x)
2.5
0.8 max. depth
1.0 (2x)
July 1998
5
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
PBYR1045F, PBYR1045X series
Schottky barrier
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
July 1998
6
Rev 1.200