Document Outline
- GENERAL DESCRIPTION
- QUICK REFERENCE DATA
- PINNING - SOT93
- PIN CONFIGURATION
- SYMBOL
- LIMITING VALUES
- THERMAL RESISTANCES
- STATIC CHARACTERISTICS
- MECHANICAL DATA
- DEFINITIONS
- LIFE SUPPORT APPLICATIONS
Philips Semiconductors
Product specification
Rectifier diodes
PBYR3045PT series
schottky barrier
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Dual, low leakage, platinum barrier,
SYMBOL
PARAMETER
MAX.
MAX.
MAX.
UNIT
schottky rectifier diodes in a plastic
envelope
featuring
low
forward
PBYR30-
35PT
40PT
45PT
voltage drop and absence of stored
V
RRM
Repetitive peak reverse
35
40
45
V
charge. These devices can withstand
voltage
reverse voltage transients and have
V
F
Forward voltage
0.60
0.60
0.60
V
guaranteed reverse surge capability.
I
O(AV)
Output current (both
30
30
30
A
The devices are intended for use in
diodes conducting)
switched mode power supplies and
high frequency circuits in general
where low conduction and zero
switching losses are important.
PINNING - SOT93
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
Anode 1 (a)
2
Cathode (k)
3
Anode 2 (a)
tab
Cathode (k)
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-35
-40
-45
V
RRM
Repetitive peak reverse voltage
-
35
40
45
V
V
RWM
Crest working reverse voltage
-
35
40
45
V
V
R
Continuous reverse voltage
T
mb
136 C
-
35
40
45
V
I
O(AV)
Output current (both diodes
square wave;
= 0.5;
-
30
A
conducting)
1
T
mb
130 C
I
O(RMS)
RMS forward current
-
43
A
I
FRM
Repetitive peak forward current t = 25
s;
= 0.5;
-
30
A
per diode
T
mb
130 C
I
FSM
Non-repetitive peak forward
t = 10 ms
-
180
A
current per diode
t = 8.3 ms
-
200
A
sinusoidal T
j
= 125 C prior
to surge; with reapplied
V
RWM(max)
I
2
t
I
2
t for fusing
t = 10 ms
-
162
A
2
s
I
RRM
Repetitive peak reverse current t
p
= 2
s;
= 0.001
-
2
A
per diode.
I
RSM
Non-repetitive peak reverse
t
p
= 100
s
-
2
A
current per diode.
T
stg
Storage temperature
-65
175
C
T
j
Operating junction temperature
-
150
C
1
2
3
tab
k
a1
a2
1
2
3
1 For output currents in excess of 20 A connection should be made to the exposed metal mounting base.
August 1996
1
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
PBYR3045PT series
schottky barrier
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance junction to
per diode
-
-
1.4
K/W
mounting base
both diodes
-
-
1.0
K/W
R
th j-a
Thermal resistance junction to
in free air.
-
45
-
K/W
ambient
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
Forward voltage (per diode)
I
F
= 20 A; T
j
= 125C
-
0.55
0.60
V
I
F
= 30 A; T
j
= 125C
-
0.67
0.72
V
I
F
= 30 A
-
0.71
0.76
I
R
Reverse current (per diode)
V
R
= V
RWM
-
100
200
A
V
R
= V
RWM
; T
j
= 125 C
-
12
40
mA
C
d
Junction capacitance (per
f = 1MHz; V
R
= 5V; T
j
= 25 C to
-
800
-
pF
diode)
125 C
August 1996
2
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
PBYR3045PT series
schottky barrier
Fig.1. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
D.
Fig.2. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Fig.3. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.4. Typical reverse leakage current per diode;
I
R
= f(V
R
); parameter T
j
Fig.5. Typical junction capacitance per diode;
C
d
= f(V
R
); f = 1 MHz; T
j
= 25C to 125 C.
Fig.6. Transient thermal impedance per diode;
Z
th j-mb
= f(t
p
).
0
5
10
15
20
25
0
5
10
15
PBYR1645
IF(AV) / A
PF / W
D = 1.0
0.5
0.2
0.1
150
143
136
129
Tmb(max) / C
D =
t
p
t
p
T
T
t
I
Vo = 0.302
Rs = 0.012
0
25
50
100
10
1
0.1
0.01
IR / mA
VR/ V
PBYR1645
75 C
100 C
125 C
150 C
Tj = 50 C
0
5
10
15
0
2
4
6
8
10
12
a = 1.57
1.9
2.8
4
PBYR1645
IF(AV) / A
PF / W
Tmb(max) / C
150
147.2
144.4
141.6
138.8
136
133.2
2.2
Vo = 0.302
Rs = 0.012
1
10
100
100
10000
1000
Cd / pF
VR / V
PBYR1645
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
10
20
30
40
50
PBYR1645
VF / V
IF / A
Tj = 25 C
Tj = 125 C
typ
max
10
1
0.1
0.01
10us
1ms
0.1s
10s
tp / s
Zth j-mb (K/W)
P
t
p
t
D
August 1996
3
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
PBYR3045PT series
schottky barrier
MECHANICAL DATA
Dimensions in mm
Net Mass: 5 g
Fig.7. SOT93; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT93 envelope.
2. Epoxy meets UL94 V0 at 1/8".
2 max
12.7
max
2
4.6
max
21
max
0.4
1.6
0.5
min
13.6
min
4.4
5.5
1.15
0.95
11
0.5
M
2.2 max
dimensions within
this zone are
uncontrolled
1
2
3
4.25
4.15
13.6
14
15.2
max
August 1996
4
Rev 1.100
Philips Semiconductors
Product specification
Rectifier diodes
PBYR3045PT series
schottky barrier
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
August 1996
5
Rev 1.100
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