Philips Semiconductors
Product specification
Rectifier diodes
PBYR645CT series
Schottky barrier
FEATURES
SYMBOL
QUICK REFERENCE DATA
Low forward volt drop
Fast switching
V
R
= 35 V/ 40 V/ 45 V
Reverse surge capability
High thermal cycling performance
I
O(AV)
= 10 A
Low thermal resistance
V
F
0.6V
GENERAL DESCRIPTION
PINNING
SOT82
Dual, common cathode schottky
PIN
DESCRIPTION
rectifier
diodes
in
a
plastic
envelope. Intended for use as
1
anode 1
output rectifiers in low voltage, high
frequency switched mode power
2
cathode
supplies.
3
anode 2
The PBYR645CT series is supplied
in the conventional leaded SOT82
tab
cathode
package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
PBYR6
35CT 40CT 45CT
V
RRM
Peak repetitive reverse
-
35
40
45
V
voltage
V
RWM
Working peak reverse
-
35
40
45
V
voltage
V
R
Continuous reverse voltage
T
mb
100 C
-
35
40
45
V
I
O(AV)
Average rectified output
square wave;
= 0.5; T
mb
119 C
-
10
A
current (both diodes
conducting)
I
FRM
Repetitive peak forward
square wave;
= 0.5; T
mb
119 C
-
10
A
current per diode
I
FSM
Non-repetitive peak forward
t = 10 ms
-
75
A
current diode
t = 8.3 ms
-
82
A
sinusoidal; T
j
= 125 C prior to
surge; with reapplied V
RRM(max)
I
RRM
Peak repetitive reverse
pulse width and repetition rate
-
1
A
surge current per diode
limited by T
j max
T
j
Operating junction
-
150
C
temperature
T
stg
Storage temperature
- 65
150
C
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction
per diode
-
-
5
K/W
to mounting base
both diodes
-
-
4
K/W
R
th j-a
Thermal resistance junction
in free air
-
100
-
K/W
to ambient
k
a1
a2
1
3
2
1
2
3
May 1998
1
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
PBYR645CT series
Schottky barrier
ELECTRICAL CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
V
F
Forward voltage
I
F
= 5 A; T
j
= 125C
-
0.51
0.6
V
I
F
= 10 A
-
0.72
0.87
V
I
R
Reverse current
V
R
= V
RWM
-
0.12
0.5
mA
V
R
= V
RWM
; T
j
= 100C
-
10
15
mA
C
d
Junction capacitance
V
R
= 5 V; f = 1 MHz, T
j
= 25C to 125C
-
150
-
pF
May 1998
2
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
PBYR645CT series
Schottky barrier
Fig.1. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
D.
Fig.2. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Fig.3. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.4. Typical reverse leakage current per diode;
I
R
= f(V
R
); parameter T
j
Fig.5. Typical junction capacitance per diode;
C
d
= f(V
R
); f = 1 MHz; T
j
= 25C to 125 C.
Fig.6. Transient thermal impedance; per diode;
Z
th j-mb
= f(t
p
).
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
D = 1.0
0.5
0.2
0.1
PBYR645CT
Rs = 0.033 Ohms
Vo = 0.438 V
Average forward current, IF(AV) (A)
Forward dissipation, PF (W)
Tmb(max) / C
150
D =
t
p
t
p
T
T
t
I
145
140
135
130
125
120
0
25
50
100
10
1
0.1
0.01
Reverse current, IR (mA)
Reverse voltage, VR (V)
PBYR645CT
50 C
75 C
100 C
Tj = 25 C
125 C
0
1
2
3
4
5
0
1
2
3
4
5
a = 1.57
1.9
2.2
2.8
4
PBYR645CT
Rs = 0.033 Ohms
Vo = 0.438 V
Average forward current, IF(AV) (A)
Forward dissipation, PF (W)
150
145
140
135
130
125
Tmb(max) / C
1
10
100
10
1000
100
Cd / pF
VR / V
PBYR645CT
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
5
10
15
20
BYV118
Forward voltage, VF (V)
Forward current, IF (A)
Tj = 25 C
Tj = 125 C
max
typ
0.01
0.1
1
10
PBYR645CT
1us
10us
100us
1ms
10ms
100ms
1s
10s
pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W)
D =
t
p
t
p
T
T
P
t
D
May 1998
3
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
PBYR645CT series
Schottky barrier
MECHANICAL DATA
Dimensions in mm
Net Mass: 0.8 g
Fig.7. SOT82; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT82 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
4.58
2.54
max
1)
1.2
2.8
2.3
3.1
2.5
1
2
3
0.88
max
2.29
15.3
min
11.1
max
3.75
7.8
max
1) Lead dimensions within this
zone uncontrolled.
0.5
mounting
base
May 1998
4
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
PBYR645CT series
Schottky barrier
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
May 1998
5
Rev 1.200
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