DATA SHEET
Product specification
Supersedes data of 2003 Apr 10
2004 Aug 05
DISCRETE SEMICONDUCTORS
PDTC114E series
NPN resistor-equipped transistor;
R1 = 10 k
, R2 = 10 k
2004 Aug 05
2
Philips Semiconductors
Product specification
NPN resistor-equipped transistor;
R1 = 10 k
, R2 = 10 k
PDTC114E series
FEATURES
Built-in bias resistors
Simplified circuit design
Reduction of component count
Reduced pick and place costs.
APPLICATIONS
General purpose switching and amplification
Inverter and interface circuits
Circuit driver.
QUICK REFERENCE DATA
DESCRIPTION
NPN resistor-equipped transistor (see "Simplified outline,
symbol and pinning" for package details).
SYMBOL
PARAMETER
TYP.
MAX.
UNIT
V
CEO
collector-emitter
voltage
-
50
V
I
O
output current (DC)
-
100
mA
R1
bias resistor
10
-
k
R2
bias resistor
10
-
k
PRODUCT OVERVIEW
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
TYPE NUMBER
PACKAGE
MARKING CODE
PNP COMPLEMENT
PHILIPS
EIAJ
PDTC114EE
SOT416
SC-75
09
PDTA114EE
PDTC114EEF
SOT490
SC-89
09
PDTA114EEF
PDTC114EK
SOT346
SC-59
04
PDTA114EK
PDTC114EM
SOT883
SC-101
DS
PDTA114EM
PDTC114ES
SOT54 (TO-92)
SC-43
TC114E
PDTA114ES
PDTC114ET
SOT23
-
*16
(1)
PDTA114ET
PDTC114EU
SOT323
SC-70
*09
(1)
PDTA114EU
2004 Aug 05
3
Philips Semiconductors
Product specification
NPN resistor-equipped transistor;
R1 = 10 k
, R2 = 10 k
PDTC114E series
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
TYPE NUMBER
SIMPLIFIED OUTLINE AND SYMBOL
PINNING
PIN
DESCRIPTION
PDTC114ES
1
base
2
collector
3
emitter
PDTC114EE
1
base
PDTC114EEF
2
emitter
PDTC114EK
3
collector
PDTC114ET
PDTC114EU
PDTC114EM
1
base
2
emitter
3
collector
handbook, halfpage
MAM364
1
2
3
R1
R2
2
3
1
handbook, halfpage
MDB269
1
2
3
Top view
R1
R2
1
2
3
handbook, halfpage
MHC506
1
2
3
R1
R2
2
1
3
bottom view
2004 Aug 05
4
Philips Semiconductors
Product specification
NPN resistor-equipped transistor;
R1 = 10 k
, R2 = 10 k
PDTC114E series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60
m copper strip line.
THERMAL CHARACTERISTICS
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60
m copper strip line.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
50
V
V
CEO
collector-emitter voltage
open base
-
50
V
V
EBO
emitter-base voltage
open collector
-
10
V
V
I
input voltage
positive
-
+40
V
negative
-
-
10
V
I
O
output current (DC)
-
100
mA
I
CM
peak collector current
-
100
mA
P
tot
total power dissipation
T
amb
25
C
SOT54
note 1
-
500
mW
SOT23
note 1
-
250
mW
SOT346
note 1
-
250
mW
SOT323
note 1
-
200
mW
SOT416
note 1
-
150
mW
SOT490
notes 1 and 2
-
250
mW
SOT883
notes 2 and 3
-
250
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
operating ambient temperature
-
65
+150
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
in free air
SOT54
note 1
250
K/W
SOT23
note 1
500
K/W
SOT346
note 1
500
K/W
SOT323
note 1
625
K/W
SOT416
note 1
833
K/W
SOT490
notes 1 and 2
500
K/W
SOT883
notes 2 and 3
500
K/W
2004 Aug 05
5
Philips Semiconductors
Product specification
NPN resistor-equipped transistor;
R1 = 10 k
, R2 = 10 k
PDTC114E series
CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector-base cut-off current
V
CB
= 50 V; I
E
= 0
-
-
100
nA
I
CEO
collector-emitter cut-off current
V
CE
= 30 V; I
B
= 0
-
-
1
A
V
CE
= 30 V; I
B
= 0; T
j
= 150
C
-
-
50
A
I
EBO
emitter-base cut-off current
V
EB
= 5 V; I
C
= 0
-
-
400
A
h
FE
DC current gain
V
CE
= 5 V; I
C
= 5 mA
30
-
-
V
CEsat
collector-emitter saturation voltage
I
C
= 10 mA; I
B
= 0.5 mA
-
-
150
mV
V
i(off)
input-off voltage
I
C
= 100
A; V
CE
= 5 V
-
1.1
0.8
V
V
i(on)
input-on voltage
I
C
= 10 mA; V
CE
= 0.3 V
2.5
1.8
-
V
R1
input resistor
7
10
13
k
resistor ratio
0.8
1
1.2
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
-
-
2.5
pF
R2
R1
--------
2004 Aug 05
6
Philips Semiconductors
Product specification
NPN resistor-equipped transistor;
R1 = 10 k
, R2 = 10 k
PDTC114E series
PACKAGE OUTLINES
UNIT
A1
max
bp
c
D
E
e
1
H
E
L
p
Q
w
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
0.1
0.30
0.15
0.25
0.10
1.8
1.4
0.9
0.7
0.5
e
1
1.75
1.45
0.2
v
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
0.23
0.13
SOT416
SC-75
w
M
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
A
B
B
v
M
A
0
0.5
1 mm
scale
A
0.95
0.60
c
X
1
2
3
Plastic surface mounted package; 3 leads
SOT416
97-02-28
2004 Aug 05
7
Philips Semiconductors
Product specification
NPN resistor-equipped transistor;
R1 = 10 k
, R2 = 10 k
PDTC114E series
UNIT
b
p
c
D
E
e
1
H
E
L
p
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
98-10-23
IEC
JEDEC
EIAJ
mm
0.33
0.23
0.2
0.1
1.7
1.5
0.95
0.75
0.5
e
1.0
1.7
1.5
0.1
0.1
DIMENSIONS (mm are the original dimensions)
0.5
0.3
SOT490
SC-89
bp
D
e1
e
A
Lp
detail X
HE
E
w
M
v
M
A
B
A
B
0
1
2 mm
scale
A
0.8
0.6
c
X
1
2
3
Plastic surface mounted package; 3 leads
SOT490
2004 Aug 05
8
Philips Semiconductors
Product specification
NPN resistor-equipped transistor;
R1 = 10 k
, R2 = 10 k
PDTC114E series
UNIT
A
1
b
p
c
D
E
e
1
H
E
L
p
Q
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
0.50
0.35
0.26
0.10
3.1
2.7
1.7
1.3
0.95
e
1.9
3.0
2.5
0.33
0.23
0.2
0.2
DIMENSIONS (mm are the original dimensions)
0.6
0.2
SOT346
TO-236
SC-59
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w
M
v
M
A
B
A
B
0
1
2 mm
scale
A
1.3
1.0
0.1
0.013
c
X
1
2
3
Plastic surface mounted package; 3 leads
SOT346
98-07-17
2004 Aug 05
9
Philips Semiconductors
Product specification
NPN resistor-equipped transistor;
R1 = 10 k
, R2 = 10 k
PDTC114E series
UNIT
A
1
max.
A
(1)
b
b
1
e
1
e
L
L
1
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
mm
0.50
0.46
0.20
0.12
0.55
0.47
0.03
0.62
0.55
0.35
0.65
DIMENSIONS (mm are the original dimensions)
Note
1. Including plating thickness
0.30
0.22
0.30
0.22
SOT883
SC-101
03-02-05
03-04-03
D
E
1.02
0.95
L
E
2
3
1
b
b1
A1
A
D
L1
0
0.5
1 mm
scale
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm
SOT883
e
e1
2004 Aug 05
10
Philips Semiconductors
Product specification
NPN resistor-equipped transistor;
R1 = 10 k
, R2 = 10 k
PDTC114E series
UNIT
A
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
mm
5.2
5.0
b
0.48
0.40
c
0.45
0.38
D
4.8
4.4
d
1.7
1.4
E
4.2
3.6
L
14.5
12.7
e
2.54
e1
1.27
L
1
(1)
max.
2.5
b1
0.66
0.55
DIMENSIONS (mm are the original dimensions)
Note
1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.
SOT54
TO-92
SC-43A
97-02-28
04-06-28
A
L
0
2.5
5 mm
scale
b
c
D
b
1
L1
d
E
Plastic single-ended leaded (through hole) package; 3 leads
SOT54
e1
e
1
2
3
2004 Aug 05
11
Philips Semiconductors
Product specification
NPN resistor-equipped transistor;
R1 = 10 k
, R2 = 10 k
PDTC114E series
UNIT
A
1
max.
b
p
c
D
E
e
1
H
E
L
p
Q
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
IEC
JEDEC
EIAJ
mm
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
0.95
e
1.9
2.5
2.1
0.55
0.45
0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23
TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w
M
v
M
A
B
A
B
0
1
2 mm
scale
A
1.1
0.9
c
X
1
2
3
Plastic surface mounted package; 3 leads
SOT23
2004 Aug 05
12
Philips Semiconductors
Product specification
NPN resistor-equipped transistor;
R1 = 10 k
, R2 = 10 k
PDTC114E series
UNIT
A1
max
bp
c
D
E
e1
HE
Lp
Q
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
0.1
1.1
0.8
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
0.65
e
1.3
2.2
2.0
0.23
0.13
0.2
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT323
SC-70
w
M
bp
D
e1
e
A
B
A1
Lp
Q
detail X
c
HE
E
v
M
A
A
B
y
0
1
2 mm
scale
A
X
1
2
3
Plastic surface mounted package; 3 leads
SOT323
97-02-28
2004 Aug 05
13
Philips Semiconductors
Product specification
NPN resistor-equipped transistor;
R1 = 10 k
, R2 = 10 k
PDTC114E series
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
LEVEL
DATA SHEET
STATUS
(1)
PRODUCT
STATUS
(2)(3)
DEFINITION
I
Objective data
Development
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
DEFINITIONS
Short-form specification
The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition
Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications
These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status `Production'), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
Koninklijke Philips Electronics N.V. 2004
SCA76
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Philips Semiconductors a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands
R75/10/pp
14
Date of release:
2004 Aug 05
Document order number:
9397 750 13663
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