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Электронный компонент: PDTC124XK

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DATA SHEET
Product specification
Supersedes data of 2000 Sep 06
2000 Dec 04
DISCRETE SEMICONDUCTORS
BGA2011
900 MHz high linear low noise
amplifier
book, halfpage
MBD128
2000 Dec 04
2
Philips Semiconductors
Product specification
900 MHz high linear low noise amplifier
BGA2011
FEATURES
Low current, low voltage
High linearity
High power gain
Low noise
Integrated temperature compensated biasing
Control pin for adjustment bias current.
APPLICATIONS
RF front end
Low noise amplifiers, e.g. CDMA, PHs, Dect, etc.
DESCRIPTION
Silicon Monolitic Microwave Integrated Circuit (MMIC)
amplifier consisting of an NPN double polysilicon transistor
with integrated biasing for low voltage applications in a
6-pin SOT363 plastic SMD package.
PINNING
PIN
DESCRIPTION
1
RF in
2
V
C
3
V
S
4
RF out
5, 6
GND
handbook, halfpage
Top view
MBL251
BIAS
CIRCUIT
RF in
RF out
GND
VS
VC
1
3
2
4
5
6
Fig.1 Simplified outline (SOT363) and symbol.
Marking code:A5-
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
S
DC supply voltage
RF input AC coupled
3
4.5
V
I
S
DC supply current
15
-
mA
I
C
DC control current
V
C
= V
S
0.11
-
mA
|s
21
|
2
insertion power gain
in application circuit, see Fig.2;
f = 900 MHz
19
-
dB
NF
noise figure
I
S
= 15 mA; f = 900 MHz
1.7
-
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
S
DC supply voltage
RF input AC coupled
-
4.5
V
V
C
voltage on control pin
-
V
S
V
I
S
supply current
forced by DC voltage on RF input
-
30
mA
I
C
control current
-
0.25
mA
P
tot
total power dissipation
T
s
100
C
-
135
mW
T
stg
storage temperature
-
65
+150
C
T
j
operating junction temperature
-
150
C
2000 Dec 04
3
Philips Semiconductors
Product specification
900 MHz high linear low noise amplifier
BGA2011
THERMAL CHARACTERISTICS
CHARACTERISTICS
RF input AC coupled; V
S
= 3 V; I
S
= 15 mA; f = 900 MHz; T
j
= 25
C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-s
thermal resistance from junction
to solder point
P
tot
= 135 mW; T
s
100
C
350
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
S
supply current
10
15
20
mA
I
C
control current
-
0.11
-
mA
R
L IN
return losses input
typical application; see Fig.2
-
-
11
-
dB
high IP3 (see Fig.2; stripline = 0 mm)
-
-
11
-
dB
high IP3 (see Fig.2; stripline = 1.5 mm)
-
-
17
-
dB
R
L OUT
return losses output
typical application; see Fig.2
-
-
11
-
dB
high IP3 (see Fig.2; stripline = 0 mm)
-
-
12
-
dB
high IP3 (see Fig.2; stripline = 1.5 mm)
-
-
14
-
dB
|s
21
|
2
insertion power gain
typical application; see Fig.2
-
15
-
dB
high IP3 (see Fig.2; stripline = 0 mm)
-
19
-
dB
high IP3 (see Fig.2; stripline = 1.5 mm)
-
16
-
dB
NF
noise figure
typical application; see Fig.2;
I
S
= 15 mA
-
1.5
-
dB
high IP3 (see Fig.2; stripline = 0 mm)
-
1.6
-
dB
high IP3 (see Fig.2; stripline = 1.5 mm)
-
1.7
-
dB
IP3
in
input intercept point
typical application; see Fig.2
-
-
2
-
dBm
high IP3 (see Fig.2; stripline = 0 mm)
-
4
-
dBm
high IP3 (see Fig.2; stripline = 1.5 mm)
-
10
-
dBm
2000 Dec 04
4
Philips Semiconductors
Product specification
900 MHz high linear low noise amplifier
BGA2011
APPLICATION INFORMATION
List of components (see Fig.2)
Note
1. The stripline (w = 0.7 mm) is on a gold plated double copper-clad printed-circuit board (
r
= 6.15),
board thickness = 0.64 mm, copper thickness = 35
m, gold thickness = 5
m.
COMPONENT
DESCRIPTION
TYPICAL
APPLICATION
HIGH IP3
APPLICATION
DIMENSIONS
C1, C2
multilayer ceramic chip capacitor
100 pF
100 pF
0603
C3, C5
multilayer ceramic chip capacitor
22 nF
22 nF
0603
C4
multilayer ceramic chip capacitor
5.6 pF
5.6 pF
0603
C6
multilayer ceramic chip capacitor
-
2 x 100 nF
0805
L1
SMD inductor
-
10 nH
0603
L2
SMD inductor
-
8.2 nH
0603
handbook, full pagewidth
GND
OUT
stripline
BIAS
CIRCUIT
C1
C6
L1
VC
L2
RF in
VS
VC
IN
C4
SOT363
C5
C2
RF out
C3
VS
MLD480
Fig.2 Application circuit.
2000 Dec 04
5
Philips Semiconductors
Product specification
900 MHz high linear low noise amplifier
BGA2011
handbook, halfpage
0
0
f (MHz)
gain
(dB)
1000
3000
30
10
20
2000
MLD481
Gmax
s21
2
Fig.3
Insertion gain (
|
s
21
|
2
) and G
max
as
functions of frequency; typical values.
I
C
= 15 mA; V
S
= V
C
= 3 V; P
D
=
-
30 dBm; Z
o
= 50
.
handbook, halfpage
0
0
1
VC (V)
gain
(dB)
3
20
15
5
10
0
IS
(mA)
IS
IS
20
15
5
10
2
MLD482
s21
2
f = 900 MHz; V
S
= 3 V; P
D
=
-
30 dBm.
Fig.4
Insertion gain and supply current as
functions of control voltage; typical values.
handbook, halfpage
20
10
5
0
15
MLD483
10
-
3
10
-
2
10
-
1
IC (mA)
s21
2
(dB)
f = 900 MHz; V
S
= 4 V; P
D
=
-
30 dBm.
Fig.5
Insertion gain as a function of control
current; typical values.
handbook, halfpage
5
15
15
5
0
10
10
MLD484
IS (mA)
IP3out
(dBm)
IP3in
(dBm)
0
-
10
-
15
-
5
IP3out
IP3in
V
S
= V
C
= 3 V; P
D
=
-
30 dBm (both tones); f = 900 MHz;
f = 100 kHz.
Fig.6
Output and input 3rd order intercept point
as a function of supply current;
typical application; typical values.
2000 Dec 04
6
Philips Semiconductors
Product specification
900 MHz high linear low noise amplifier
BGA2011
handbook, halfpage
5
15
2
0
0.4
0.8
1.2
1.6
10
IS (mA)
NF
(dB)
MLD485
Fig.7
Noise figure as a function of supply
current; typical values.
V
S
= V
C
= 3 V; f = 900 MHz
.
Scattering parameters
V
S
= V
C
= 3 V; P
D
=
-
30 dBm; Z
o
= 50
; T
amb
= 25
C
f
(MHz)
s
11
s
21
s
12
s
22
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
100
0.553
-
22.45
16.198
160.5
0.006
76.72
0.115
-
87.98
200
0.499
-
42.12
14.354
145.4
0.012
67.53
0.184
-
113.5
400
0.394
-
71.44
10.688
124.6
0.018
59.55
0.256
-
141.2
600
0.331
-
90.58
8.156
112.2
0.021
58.29
0.283
-
158.1
800
0.295
-
104.0
6.512
103.9
0.024
60.91
0.293
-
170.5
1000
0.276
-
114.9
5.415
97.72
0.027
64.65
0.298
178.7
1200
0.267
-
124.2
4.640
93.01
0.032
69.04
0.304
169.5
1400
0.262
-
134.2
4.112
89.10
0.037
73.22
0.310
162.5
1600
0.270
-
144.2
3.659
85.21
0.043
75.43
0.311
157.0
1800
0.287
-
152.7
3.336
82.21
0.049
77.84
0.309
152.7
2000
0.309
-
159.7
3.045
78.21
0.057
78.60
0.312
150.5
2200
0.339
-
166.2
2.849
73.94
0.066
77.96
0.304
149.6
2400
0.360
-
172.0
2.680
69.19
0.076
75.04
0.291
151.4
2600
0.390
-
175.9
2.511
64.60
0.086
74.92
0.292
149.2
2800
0.398
178.0
2.332
59.20
0.094
69.95
0.278
148.4
3000
0.392
173.9
2.108
56.72
0.099
69.12
0.317
140.0
2000 Dec 04
7
Philips Semiconductors
Product specification
900 MHz high linear low noise amplifier
BGA2011
handbook, full pagewidth
MLD486
0
0.2
0.6
0.4
0.8
1.0
1.0
+
5
+
2
+
1
+
0.5
+
0.2
0
-
0.2
-
0.5
-
1
-
2
-
5
0.2
0.5
1
3 GHz
2
5
180
135
90
45
0
-
45
-
90
-
135
900 MHz
100 MHz
I
C
= 15 mA; V
S
= V
C
= 3 V; P
D
=
-
30 dBm; Z
o
= 50
.
Fig.8 Common emitter input reflection coefficient (s
11
); typical values.
handbook, full pagewidth
MLD487
20
16
12
8
4
180
-
135
-
90
-
45
0
45
90
135
500 MHz
3 GHz
900 MHz
1.8 GHz
100 MHz
I
C
= 15 mA; V
S
= V
C
= 3 V; P
D
=
-
30 dBm; Z
o
= 50
.
Fig.9 Common emitter forward transmission coefficient (s
21
); typical values.
2000 Dec 04
8
Philips Semiconductors
Product specification
900 MHz high linear low noise amplifier
BGA2011
handbook, full pagewidth
MLD488
20
16
12
8
4
180
-
135
-
90
-
45
0
45
90
135
3 GHz
100 MHz
Fig.10 Common emitter reverse transmission coefficient (s
12
); typical values.
I
C
= 15 mA; V
S
= V
C
= 3 V; P
D
=
-
30 dBm; Z
o
= 50
.
handbook, full pagewidth
MLD489
0
0.2
0.6
0.4
0.8
1.0
1.0
+
5
+
2
+
1
+
0.5
+
0.2
0
-
0.2
-
0.5
-
1
-
2
-
5
0.2
0.5
1
3 GHz
2
5
180
135
90
45
0
-
45
-
90
-
135
100 MHz
900 MHz
I
C
= 15 mA; V
S
= V
C
= 3 V; P
D
=
-
30 dBm; Z
o
= 50
.
Fig.11 Common emitter output reflection coefficient (s
22
); typical values.
2000 Dec 04
9
Philips Semiconductors
Product specification
900 MHz high linear low noise amplifier
BGA2011
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT363
SC-88
w
B
M
bp
D
e1
e
pin 1
index
A
A1
Lp
Q
detail X
HE
E
v
M
A
A
B
y
0
1
2 mm
scale
c
X
1
3
2
4
5
6
Plastic surface mounted package; 6 leads
SOT363
UNIT
A1
max
bp
c
D
E
e
1
HE
Lp
Q
y
w
v
mm
0.1
0.30
0.20
2.2
1.8
0.25
0.10
1.35
1.15
0.65
e
1.3
2.2
2.0
0.2
0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
0.25
0.15
A
1.1
0.8
97-02-28
2000 Dec 04
10
Philips Semiconductors
Product specification
900 MHz high linear low noise amplifier
BGA2011
DATA SHEET STATUS
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DATA SHEET STATUS
PRODUCT
STATUS
DEFINITIONS
(1)
Objective specification
Development
This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification
Qualification
This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
DEFINITIONS
Short-form specification
The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition
Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications
These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified
2000 Dec 04
11
Philips Semiconductors
Product specification
900 MHz high linear low noise amplifier
BGA2011
NOTES
Philips Electronics N.V.
SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
2000
70
Philips Semiconductors a worldwide company
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Printed in The Netherlands
613516/02/pp
12
Date of release:
2000 Dec 04
Document order number:
9397 750 07678