DATA SHEET
Product specification
Supersedes data of 2004 Apr 06
2004 Aug 06
DISCRETE SEMICONDUCTORS
PDTC143T series
NPN resistor-equipped transistors;
R1 = 4.7 k
, R2 = open
2004 Aug 06
2
Philips Semiconductors
Product specification
NPN resistor-equipped transistors;
R1 = 4.7 k
, R2 = open
PDTC143T series
FEATURES
Built-in bias resistors
Simplified circuit design
Reduction of component count
Reduced pick and place costs.
APPLICATIONS
General purpose switching and amplification
Inverter and interface circuits
Circuit applications.
QUICK REFERENCE DATA
DESCRIPTION
NPN resistor-equipped transistor (see "Simplified outline,
symbol and pinning" for package details).
SYMBOL
PARAMETER
TYP.
MAX.
UNIT
V
CEO
collector-emitter
voltage
-
50
V
I
O
output current (DC)
-
100
mA
R1
bias resistor
4.7
-
k
R2
open
-
-
-
PRODUCT OVERVIEW
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
TYPE NUMBER
PACKAGE
MARKING CODE
PNP COMPLEMENT
PHILIPS
EIAJ
PDTC143TE
SOT416
SC-75
40
PDTA143TE
PDTC143TEF
SOT490
SC-89
11
PDTA143TEF
PDTC143TK
SOT346
SC-59
52
PDTA143TK
PDTC143TM
SOT883
SC-101
DM
PDTA143TM
PDTC143TS
SOT54 (TO-92)
SC-43
TC143T
PDTA143TS
PDTC143TT
SOT23
-
*33
(1)
PDTA143TT
PDTC143TU
SOT323
SC-70
*52
(1)
PDTA143TU
2004 Aug 06
3
Philips Semiconductors
Product specification
NPN resistor-equipped transistors;
R1 = 4.7 k
, R2 = open
PDTC143T series
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
TYPE NUMBER
SIMPLIFIED OUTLINE AND SYMBOL
PINNING
PIN
DESCRIPTION
PDTC143TS
1
base
2
collector
3
emitter
PDTC143TE
1
base
PDTC143TEF
2
emitter
PDTC143TK
3
collector
PDTC143TT
PDTC143TU
PDTC143TM
1
base
2
emitter
3
collector
handbook, halfpage
MAM361
1
2
3
2
3
1
R1
handbook, halfpage
MDB270
1
2
3
Top view
R1
1
2
3
handbook, halfpage
MHC507
1
2
3
R1
2
1
3
Bottom view
2004 Aug 06
4
Philips Semiconductors
Product specification
NPN resistor-equipped transistors;
R1 = 4.7 k
, R2 = open
PDTC143T series
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60
m copper strip line.
TYPE NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
PDTC143TE
-
plastic surface mounted package; 3 leads
SOT416
PDTC143TEF
-
plastic surface mounted package; 3 leads
SOT490
PDTC143TK
-
plastic surface mounted package; 3 leads
SOT346
PDTC143TM
-
leadless ultra small plastic package; 3 solder lands; body
1.0
0.6
0.5 mm
SOT883
PDTC143TS
-
plastic single-ended leaded (through hole) package; 3 leads
SOT54
PDTC143TT
-
plastic surface mounted package; 3 leads
SOT23
PDTC143TU
-
plastic surface mounted package; 3 leads
SOT323
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
50
V
V
CEO
collector-emitter voltage
open base
-
50
V
V
EBO
emitter-base voltage
open collector
-
5
V
I
O
output current (DC)
-
100
mA
I
CM
collector current
-
100
mA
P
tot
total power dissipation
T
amb
25
C
SOT54
note 1
-
500
mW
SOT23
note 1
-
250
mW
SOT346
note 1
-
250
mW
SOT323
note 1
-
200
mW
SOT490
notes 1 and 2
-
250
mW
SOT883
notes 2 and 3
-
250
mW
SOT416
note 1
-
150
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
operating ambient
temperature
-
65
+150
C
2004 Aug 06
5
Philips Semiconductors
Product specification
NPN resistor-equipped transistors;
R1 = 4.7 k
, R2 = open
PDTC143T series
THERMAL CHARACTERISTICS
Notes
1. Refer to standard mounting conditions.
2. Reflow soldering is the only recommended soldering method.
3. Refer to SOT883 standard mounting conditions; FR4 with 60
m copper strip line.
CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th(j-a)
thermal resistance from junction to ambient
in free air
SOT54
note 1
250
K/W
SOT23
note 1
500
K/W
SOT346
note 1
500
K/W
SOT323
note 1
625
K/W
SOT490
notes 1 and 2
500
K/W
SOT883
notes 2 and 3
500
K/W
SOT416
note 1
833
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector-base cut-off current
V
CB
= 50 V; I
E
= 0 A
-
-
100
nA
I
CEO
collector-emitter cut-off current
V
CE
= 30 V; I
B
= 0 A
-
-
1
A
V
CE
= 30 V; I
B
= 0 A; T
j
= 150
C
-
-
50
A
I
EBO
emitter-base cut-off current
V
EB
= 5 V; I
C
= 0 A
-
-
100
nA
h
FE
DC current gain
V
CE
= 5 V; I
C
= 1 mA
200
-
-
V
CEsat
collector-emitter saturation voltage
I
C
= 5 mA; I
B
= 0.25 mA
-
-
100
mV
R1
input resistor
3.3
4.7
6.1
k
C
c
collector capacitance
I
E
= i
e
= 0 A; V
CB
= 10 V;
f = 1 MHz
-
-
2.5
pF
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