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Электронный компонент: PDZ5.1B

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DATA SHEET
Product specification
Supersedes data of 1998 Jan 09
1998 Apr 23
DISCRETE SEMICONDUCTORS
PDZ-B series
Voltage regulator diodes
book, halfpage
M3D049
1998 Apr 23
2
Philips Semiconductors
Product specification
Voltage regulator diodes
PDZ-B series
FEATURES
Total power dissipation:
max. 400 mW
Small plastic package suitable for
surface mounted design
Wide variety of voltage ranges:
nom. 2.4 to 36 V (E24 range).
APPLICATIONS
General voltage regulation.
DESCRIPTION
Low-power general purpose voltage
regulator diodes in a small plastic
SMD SOD323 package.
PINNING
PIN
DESCRIPTION
1
cathode
2
anode
Fig.1 Simplified outline (SOD323) and symbol.
handbook, halfpage
,
1
2
Top view
MAM387
MARKING
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board measuring 11
25
1.6 mm.
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
PDZ2.4B
Z0
PDZ5.1B
Z8
PDZ11B
ZG
PDZ24B
ZQ
PDZ2.7B
Z1
PDZ5.6B
Z9
PDZ12B
ZH
PDZ27B
ZR
PDZ3.0B
Z2
PDZ6.2B
ZA
PDZ13B
ZJ
PDZ30B
ZS
PDZ3.3B
Z3
PDZ6.8B
ZB
PDZ15B
ZK
PDZ33B
ZT
PDZ3.6B
Z4
PDZ7.5B
ZC
PDZ16B
ZL
PDZ36B
ZU
PDZ3.9B
Z5
PDZ8.2B
ZD
PDZ18B
ZM
PDZ4.3B
Z6
PDZ9.1B
ZE
PDZ20B
ZN
PDZ4.7B
Z7
PDZ10B
ZF
PDZ22B
ZP
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
F
continuous forward current
-
200
mA
I
ZSM
non-repetitive peak reverse current
t
p
= 100
s; square wave;
T
amb
= 25
C prior to surge
see Table 2
P
tot
total power dissipation
T
amb
= 25
C; note 1; see Fig.2
-
400
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
1998 Apr 23
3
Philips Semiconductors
Product specification
Voltage regulator diodes
PDZ-B series
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board measuring 11
25
1.6 mm.
ELECTRICAL CHARACTERISTICS
Table 1
Total series
T
j
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point
130
K/W
R
th j-a
thermal resistance from junction to ambient
note 1
340
K/W
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
V
F
forward voltage
I
F
= 10 mA; see Fig.3
0.9
V
I
F
= 100 mA; see Fig.3
1.1
V
I
R
reverse current
PDZ2.4B
V
R
= 1 V
50
A
PDZ2.7B
V
R
= 1 V
20
A
PDZ3.0B
V
R
= 1 V
10
A
PDZ3.3B
V
R
= 1 V
5
A
PDZ3.6B
V
R
= 1 V
5
A
PDZ3.9B
V
R
= 1 V
3
A
PDZ4.3B
V
R
= 1 V
3
A
PDZ4.7B
V
R
= 1 V
2
A
PDZ5.1B
V
R
= 1.5 V
2
A
PDZ5.6B
V
R
= 2.5 V
1
A
PDZ6.2B
V
R
= 3 V
500
nA
PDZ6.8B
V
R
= 3.5 V
500
nA
PDZ7.5B
V
R
= 4 V
500
nA
PDZ8.2B
V
R
= 5 V
500
nA
PDZ9.1B
V
R
= 6 V
500
nA
PDZ10B
V
R
= 7 V
100
nA
PDZ11B
V
R
= 8 V
100
nA
PDZ12B
V
R
= 9 V
100
nA
PDZ13B
V
R
= 10 V
100
nA
PDZ15B
V
R
= 11 V
50
nA
PDZ16B
V
R
= 12 V
50
nA
PDZ18B
V
R
= 13 V
50
nA
PDZ20B
V
R
= 15 V
50
nA
PDZ22B
V
R
= 17 V
50
nA
PDZ24B
V
R
= 19 V
50
nA
PDZ27B
V
R
= 21 V
50
nA
PDZ30B
V
R
= 23 V
50
nA
PDZ33B
V
R
= 25 V
50
nA
PDZ36B
V
R
= 27 V
50
nA
1998
Apr
23
4
Philips Semiconductors
Product specification
V
oltage regulator diodes
PDZ-B series
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Table 2
Per type
T
j
= 25
C unless otherwise specified.
TYPE
NUMBER
WORKING VOLTAGE
V
Z
(V)
at I
Z
= 5 mA
DIFFERENTIAL RESISTANCE
r
dif
(
)
TEMP. COEFF.
S
Z
(mV/K)
at I
Z
= 5 mA
(see Figs 4 and 5)
DIODE CAP.
C
d
(pF)
at f = 1 MHz;
V
R
= 0
NON-REPETITIVE PEAK
REVERSE CURRENT
I
ZSM
(A) at t
p
= 100
s;
T
amb
= 25
C
MIN.
MAX.
MAX.
at I
Z
(mA)
MAX.
at I
Z
(mA)
TYP.
MAX.
MAX.
PDZ2.4B
2.43
2.63
1000
0.5
100
5
-
1.6
450
8.0
PDZ2.7B
2.69
2.91
1000
0.5
100
5
-
2.0
440
8.0
PDZ3.0B
2.85
3.07
1000
0.5
95
5
-
2.1
425
8.0
PDZ3.3B
3.32
3.53
1000
0.5
95
5
-
2.4
410
8.0
PDZ3.6B
3.60
3.85
500
1.0
90
5
-
2.4
390
8.0
PDZ3.9B
3.89
4.16
500
1.0
90
5
-
2.5
370
8.0
PDZ4.3B
4.17
4.48
600
1.0
90
5
-
2.5
350
8.0
PDZ4.7B
4.55
4.75
600
1.0
90
5
-
1.4
325
8.0
PDZ5.1B
4.96
5.20
250
0.5
60
5
0.3
300
5.5
PDZ5.6B
5.48
5.73
100
0.5
50
5
1.9
275
5.5
PDZ6.2B
6.06
6.33
80
0.5
50
5
2.7
250
5.5
PDZ6.8B
6.65
6.93
60
0.5
40
5
3.4
215
5.5
PDZ7.5B
7.28
7.60
60
0.5
10
5
4.0
170
3.5
PDZ8.2B
8.02
8.36
60
0.5
10
5
4.6
150
3.5
PDZ9.1B
8.85
9.23
60
0.5
10
5
5.5
120
3.5
PDZ10B
9.77
10.21
60
0.5
10
5
6.4
110
3.5
PDZ11B
10.78
11.22
60
0.5
10
5
7.4
108
3.0
PDZ12B
11.74
12.24
80
0.5
10
5
8.4
105
3.0
PDZ13B
12.91
13.49
80
0.5
10
5
9.4
103
2.5
PDZ15B
14.34
14.98
80
0.5
15
5
11.4
99
2.0
PDZ16B
15.85
16.51
80
0.5
20
5
12.4
97
1.5
PDZ18B
17.56
18.35
80
0.5
20
5
14.4
93
1.5
PDZ20B
19.52
20.39
100
0.5
20
5
16.4
88
1.5
PDZ22B
21.54
22.47
100
0.5
25
5
18.4
84
1.3
PDZ24B
23.72
24.78
120
0.5
30
5
20.4
80
1.3
PDZ27B
26.19
27.53
150
0.5
40
5
23.4
73
1.0
PDZ30B
29.19
30.69
200
0.5
40
5
26.6
66
1.0
PDZ33B
32.15
33.79
250
0.5
40
5
29.7
60
0.9
PDZ36B
35.07
36.87
300
0.5
60
5
33.0
59
0.8
1998 Apr 23
5
Philips Semiconductors
Product specification
Voltage regulator diodes
PDZ-B series
GRAPHICAL DATA
Fig.2 Power derating curve.
handbook, halfpage
0
50
100
200
Tamb (
C)
Ptot
(mW)
500
400
300
100
0
200
150
MBK245
T
j
= 25
C.
Fig.3
Forward current as a function of forward
voltage; typical values.
handbook, halfpage
0.6
1.0
300
100
0
200
MBG781
0.8
VF (V)
IF
(mA)
Fig.4
Temperature coefficient as a function
of working current; typical values.
PDZ2.4B to PDZ4.3B.
T
j
= 25
C to 150
C.
handbook, halfpage
0
60
0
-
2
-
3
-
1
MGL273
20
40
IZ (mA)
SZ
(mV/K)
4.3
3.9
3.6
3.3
3.0
2.4
2.7
Fig.5
Temperature coefficient as a function
of working current; typical values.
PDZ4.7B to PDZ12B.
T
j
= 25
C to 150
C.
handbook, halfpage
0
20
16
10
0
-
5
5
MGL274
4
8
12
IZ (mA)
SZ
(mV/K)
4.7
12
11
10
9.1
8.2
7.5
6.8
6.2
5.6
5.1
1998 Apr 23
6
Philips Semiconductors
Product specification
Voltage regulator diodes
PDZ-B series
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOD323
98-09-14
0
1
2 mm
scale
SOD323
UNIT
bp
c
D
E
Q
v
mm
0.40
0.25
+
0.05
-
0.05
0.25
0.10
0.2
1.35
1.15
1.8
1.6
A
1.1
0.8
HE
2.7
2.3
0.25
0.15
Lp
0.45
0.15
DIMENSIONS (mm are the original dimensions)
D
1
2
HE
Lp
A
E
bp
A1
Q
Note
1. The marking bar indicates the cathode.
A1
max.
Plastic surface mounted package; 2 leads
,
v
M
A
A
c
(1)
7
Philips Semiconductors
Product specification
Voltage regulator diodes
PDZ-B series
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Internet: http://www.semiconductors.philips.com
Philips Semiconductors a worldwide company
Philips Electronics N.V. 1998
SCA57
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115104/00/03/pp8
Date of release: 1998 Apr 23
Document order number:
9397 750 03729