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DATA SHEET
Product specification
Supersedes data of 2001 Mar 27
2001 Jul 20
DISCRETE SEMICONDUCTORS
PBSS5140U
40 V low V
CEsat
PNP transistor
ge
M3D102
2001 Jul 20
2
Philips Semiconductors
Product specification
40 V low V
CEsat
PNP transistor
PBSS5140U
FEATURES
Low collector-emitter saturation voltage
High current capability
Improved device reliability due to reduced heat
generation
Enhanced performance over SOT23 1A standard
packaged transistor.
APPLICATIONS
General purpose switching and muting
LCD back lighting
Supply line switching circuits
Battery driven equipment (mobile phones, video
cameras and hand-held devices).
DESCRIPTION
PNP low V
CEsat
transistor in a SOT323 (SC-70) plastic
package.
MARKING
TYPE NUMBER
MARKING CODE
PBSS5140U
51t
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
handbook, halfpage
MAM048
Top view
2
1
3
2
3
1
Fig.1
Simplified outline (SOT323; SC-70) and
symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
MAX.
UNIT
V
CEO
collector-emitter voltage
-
40
V
I
CM
peak collector current
-
2
A
R
CEsat
equivalent on-resistance
<500
m
2001 Jul 20
3
Philips Semiconductors
Product specification
40 V low V
CEsat
PNP transistor
PBSS5140U
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint.
2. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm
2
.
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint.
2. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm
2
.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
-
40
V
V
CEO
collector-emitter voltage
open base
-
-
40
V
V
EBO
emitter-base voltage
open collector
-
-
5
V
I
C
collector current (DC)
-
-
1
A
I
CM
peak collector current
-
-
2
A
I
BM
peak base current
-
-
1
A
P
tot
total power dissipation
T
amb
25
C; note 1
-
250
mW
T
amb
25
C; note 2
-
350
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
operating ambient temperature
-
65
+150
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to
ambient
in free air; note 1
500
K/W
in free air; note 2
357
K/W
2001 Jul 20
4
Philips Semiconductors
Product specification
40 V low V
CEsat
PNP transistor
PBSS5140U
CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
Note
1. Pulse test: t
p
300
s;
0.02.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector-base cut-off current
V
CB
=
-
40 V; I
C
= 0
-
-
-
100
nA
V
CB
=
-
40 V; I
C
= 0; T
amb
= 150
C
-
-
-
50
A
I
CEO
collector-emitter cut-off current
V
CE
=
-
30 V; I
B
= 0
-
-
-
100
nA
I
EBO
emitter-base cut-off current
V
EB
=
-
5 V; I
C
= 0
-
-
-
100
nA
h
FE
DC current gain
V
CE
=
-
5 V; I
C
=
-
1 mA
300
-
-
V
CE
=
-
5 V; I
C
=
-
100 mA
300
-
800
V
CE
=
-
5 V; I
C
=
-
500 mA
250
-
-
V
CE
=
-
5 V; I
C
=
-
1 A
160
-
-
V
CEsat
saturation voltage
I
C
=
-
100 mA; I
B
=
-
1 mA
-
-
-
200
mV
I
C
=
-
500 mA; I
B
=
-
50 mA
-
-
-
250
mV
I
C
=
-
1 A; I
B
=
-
100 mA
-
-
-
500
mV
R
CEsat
equivalent on-resistance
I
C
=
-
500 mA; I
B
=
-
50 mA; note 1
-
300
<500
m
V
BEsat
base-emitter saturation voltage
I
C
=
-
1 A; I
B
=
-
50 mA
-
-
-
1.1
V
V
BEon
base-emitter turn-on voltage
V
CE
=
-
5 V; I
C
=
-
1 A
-
-
-
1
V
f
T
transition frequency
I
C
=
-
50 mA; V
CE
=
-
10 V;
f = 100 MHz
150
-
-
MHz
C
c
collector capacitance
V
CB
=
-
10 V; I
E
= I
e
= 0; f = 1 MHz
-
-
12
pF
2001 Jul 20
5
Philips Semiconductors
Product specification
40 V low V
CEsat
PNP transistor
PBSS5140U
handbook, halfpage
MLD543
0
1200
400
800
-
10
-
1
-
1
-
10
IC (mA)
hFE
-
10
2
-
10
3
-
10
4
(1)
(3)
(2)
Fig.2
DC current gain as a function of collector
current; typical values.
V
CE
=
-
5 V.
(1) T
amb
= 150
C.
(2) T
amb
= 25
C.
(3) T
amb
=
-
55
C.
handbook, halfpage
-
10
-
1
-
10
-
1
-
1
-
10
-
10
2
-
10
3
-
10
4
-
10
-
1
MLD544
IC (mA)
VBE
(V)
(3)
(2)
(1)
Fig.3
Base-emitter voltage as a function of
collector current; typical values.
V
CE
=
-
5 V.
(1) T
amb
=
-
55
C.
(2) T
amb
= 25
C.
(3) T
amb
= 150
C.
handbook, halfpage
-
10
3
-
10
2
-
10
-
1
MLD545
-
1
-
10
-
10
2
IC (mA)
VCEsat
(mV)
-
10
3
-
10
4
(2)
(1)
(3)
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
I
C
/I
B
= 10.
(1) T
amb
= 150
C.
(2) T
amb
= 25
C.
(3) T
amb
=
-
55
C.
handbook, halfpage
MLD677
10
1
10
2
-
10
-
1
-
1
-
10
IC (mA)
RCEsat
(
)
-
10
-
2
-
10
-
3
-
10
-
4
10
-
1
(3)
(1)
(2)
Fig.5
Equivalent on-resistance as a function of
collector current; typical values.
I
C
/I
B
= 10.
(1) T
amb
= 150
C.
(2) T
amb
= 25
C.
(3) T
amb
=
-
55
C.
2001 Jul 20
6
Philips Semiconductors
Product specification
40 V low V
CEsat
PNP transistor
PBSS5140U
handbook, halfpage
0
-
200
-
1000
-
400
-
600
-
800
MLD678
IC (mA)
fT
(MHz)
300
0
100
200
Fig.6
Transition frequency as a function of
collector current; typical values.
V
CE
=
-
10 V.
(1) T
amb
= 150
C.
(2) T
amb
= 25
C.
(3) T
amb
=
-
55
C.
2001 Jul 20
7
Philips Semiconductors
Product specification
40 V low V
CEsat
PNP transistor
PBSS5140U
PACKAGE OUTLINE
UNIT
A1
max
bp
c
D
E
e1
HE
Lp
Q
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
0.1
1.1
0.8
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
0.65
e
1.3
2.2
2.0
0.23
0.13
0.2
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT323
SC-70
w
M
bp
D
e1
e
A
B
A1
Lp
Q
detail X
c
HE
E
v
M
A
A
B
y
0
1
2 mm
scale
A
X
1
2
3
Plastic surface mounted package; 3 leads
SOT323
97-02-28
2001 Jul 20
8
Philips Semiconductors
Product specification
40 V low V
CEsat
PNP transistor
PBSS5140U
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DATA SHEET STATUS
(1)
PRODUCT
STATUS
(2)
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
DEFINITIONS
Short-form specification
The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition
Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications
These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
2001 Jul 20
9
Philips Semiconductors
Product specification
40 V low V
CEsat
PNP transistor
PBSS5140U
NOTES
2001 Jul 20
10
Philips Semiconductors
Product specification
40 V low V
CEsat
PNP transistor
PBSS5140U
NOTES
2001 Jul 20
11
Philips Semiconductors
Product specification
40 V low V
CEsat
PNP transistor
PBSS5140U
NOTES
Philips Electronics N.V.
SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
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Internet: http://www.semiconductors.philips.com
2001
72
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Printed in The Netherlands
613514/02/pp
12
Date of release:
2001 Jul 20
Document order number:
9397 750 08432