Document Outline
- FEATURES
- APPLICATIONS
- DESCRIPTION
- MARKING
- LIMITING VALUES
- THERMAL CHARACTERISTICS
- CHARACTERISTICS
- PACKAGE OUTLINE
- DATA SHEET STATUS
- DEFINITIONS
- DISCLAIMERS
DATA SHEET
Preliminary specification
2001 Oct 22
DISCRETE SEMICONDUCTORS
PEMH7
NPN resistor-equipped transistors;
R1 = 4.7 k
, R2 = open
M3D744
2001 Oct 22
2
Philips Semiconductors
Preliminary specification
NPN resistor-equipped transistors;
R1 = 4.7 k
, R2 = open
PEMH7
FEATURES
300 mW total power dissipation
Very small 1.6
1.2 mm ultra thin package
Self alignment during soldering due to straight leads
Replaces two SC-75/SC-89 packaged transistors on
same PCB area
Reduces required PCB area
Reduced pick and place costs.
APPLICATIONS
General purpose switching and amplification
Inverter and interface circuits
Circuit driver.
DESCRIPTION
NPN resistor-equipped transistors in a SOT666 plastic
package.
MARKING
TYPE NUMBER
MARKING CODE
PEMH7
H3
PINNING
PIN
DESCRIPTION
1, 4
emitter
TR1; TR2
2, 5
base
TR1; TR2
6, 3
collector
TR1; TR2
handbook, halfpage
MAM453
1
2
3
4
6
5
Top view
6
5
4
1
2
3
TR1
TR2
R1
R1
Fig.1 Simplified outline (SOT666) and symbol.
MBK120
2, 5
6, 3
1, 4
Fig.2 Equivalent inverter symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
MAX.
UNIT
V
CEO
collector-emitter voltage
50
V
I
CM
peak collector current
100
mA
TR1
NPN
-
-
TR2
NPN
-
-
R1
bias resistor
4.7
k
R2
open
-
-
2001 Oct 22
3
Philips Semiconductors
Preliminary specification
NPN resistor-equipped transistors;
R1 = 4.7 k
, R2 = open
PEMH7
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering method is reflow soldering.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor
V
CBO
collector-base voltage
open emitter
-
50
V
V
CEO
collector-emitter voltage
open base
-
50
V
V
EBO
emitter-base voltage
open collector
-
5
V
I
O
output current (DC)
-
100
mA
I
CM
peak collector current
-
100
mA
P
tot
total power dissipation
T
amb
25
C; note 1
-
200
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
operating ambient temperature
-
65
+150
C
Per device
P
tot
total power dissipation
T
amb
25
C; note 1
-
300
mW
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to
ambient
notes 1 and 2
416
K/W
2001 Oct 22
4
Philips Semiconductors
Preliminary specification
NPN resistor-equipped transistors;
R1 = 4.7 k
, R2 = open
PEMH7
CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per transistor
I
CBO
collector-base cut-off current
V
CB
= 50 V; I
E
= 0
-
-
100
nA
I
CEO
collector-emitter cut-off current
V
CE
= 50 V; I
B
= 0
-
-
1
A
V
CE
= 30 V; I
B
= 0; T
j
= 150
C
-
-
50
A
I
EBO
emitter-base cut-off current
V
EB
= 5 V; I
C
= 0
-
-
100
nA
h
FE
DC current gain
V
CE
= 5 V; I
C
= 1 mA
200
330
-
V
CEsat
collector-emitter saturation voltage
I
C
= 5 mA; I
B
= 0.25 mA
-
-
100
mV
R1
input resistor
3.3
4.7
6.1
k
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
-
-
2.5
pF
handbook, halfpage
10
3
10
2
MHC074
10
-
1
1
(1)
(3)
hFE
10
IC (mA)
10
2
(2)
Fig.3
DC current gain as a function of collector
current; typical values.
V
CE
= 5 V.
(1) T
amb
= 100
C.
(2) T
amb
= 25
C.
(3) T
amb
=
-
40
C.
handbook, halfpage
10
2
10
3
10
MHC075
10
-
1
1
10
VCEsat
(mV)
IC (mA)
10
2
(1)
(2)
(3)
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
I
C
/I
B
= 20.
(1) T
amb
= 100
C.
(2) T
amb
= 25
C.
(3) T
amb
=
-
40
C.
2001 Oct 22
5
Philips Semiconductors
Preliminary specification
NPN resistor-equipped transistors;
R1 = 4.7 k
, R2 = open
PEMH7
PACKAGE OUTLINE
UNIT
b
p
c
D
E
e
1
H
E
L
p
w
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
01-01-04
01-08-27
IEC
JEDEC
EIAJ
mm
0.27
0.17
0.18
0.08
1.7
1.5
1.3
1.1
0.5
e
1.0
1.7
1.5
0.1
y
0.1
DIMENSIONS (mm are the original dimensions)
0.3
0.1
SOT666
bp
pin 1 index
D
e1
e
A
Lp
detail X
HE
E
A
S
0
1
2 mm
scale
A
0.6
0.5
c
X
1
2
3
4
5
6
Plastic surface mounted package; 6 leads
SOT666
Y S
w
M
A
2001 Oct 22
6
Philips Semiconductors
Preliminary specification
NPN resistor-equipped transistors;
R1 = 4.7 k
, R2 = open
PEMH7
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DATA SHEET STATUS
(1)
PRODUCT
STATUS
(2)
DEFINITIONS
Objective data
Development
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
DEFINITIONS
Short-form specification
The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition
Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications
These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes
Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
2001 Oct 22
7
Philips Semiconductors
Preliminary specification
NPN resistor-equipped transistors;
R1 = 4.7 k
, R2 = open
PEMH7
NOTES
Koninklijke Philips Electronics N.V. 2001
SCA73
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Philips Semiconductors a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands
613514/01/pp
8
Date of release:
2001 Oct 22
Document order number:
9397 750 08629
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