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Электронный компонент: PESD5V0L2UM

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DATA SHEET
Product specification
2003 Aug 05
DISCRETE SEMICONDUCTORS
PESDxL2UM series
Low capacitance double ESD
protection diode
M3D883
BOTTOM VIEW
2003 Aug 05
2
Philips Semiconductors
Product specification
Low capacitance double ESD protection diode
PESDxL2UM series
FEATURES
Uni-directional ESD protection of two lines or
bi-directional ESD protection of one line
Reverse standoff voltage 3.3 and 5 V
Low diode capacitance
Ultra low leakage current
Leadless ultra small SOT883 surface mount package
(1
0.6
0.5 mm)
Board space 1.17 mm
2
(approx. 10% of SOT23)
ESD protection >15 kV
IEC 61000-4-2; level 4 (ESD); 15 kV (air) or
8 kV (contact).
APPLICATIONS
Cellular handsets and accessories
Portable electronics
Computers and peripherals
Communication systems
Audio and video equipment.
MARKING
DESCRIPTION
Low capacitance ESD protection diode in a three pad
SOT883 leadless ultra small plastic package designed to
protect up to two transmission or data lines from
ElectroStatic Discharge (ESD) damage.
PINNING
TYPE NUMBER
MARKING CODE
PESD3V3L2UM
F2
PESD5V0L2UM
F1
PIN
DESCRIPTION
1
cathode 1
2
cathode 2
3
common anode
handbook, halfpage
MLE220
2
1
3
Bottom view
Top view
2
1
3
Fig.1 Simplified outline (SOT883) and symbol.
2003 Aug 05
3
Philips Semiconductors
Product specification
Low capacitance double ESD protection diode
PESDxL2UM series
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Non-repetitive current pulse 8/20
s exponential decay waveform; see Fig.5.
2. Pins 1 and 3 or 2 and 3.
3. Pins 1 and 2.
4. Device mounted on standard printed-circuit board.
ESD standards compliance
THERMAL CHARACTERISTICS
Notes
1. Refer to SOT883 standard mounting conditions (footprint), FR4 with 60
m copper strip line.
2. FR4 single-sided copper 1 cm
2
.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
I
pp
peak pulse current
8/20
s pulse; notes 1, 2 and 3
PESD3V3L2UM
-
3
A
PESD5V0L2UM
-
2.5
A
P
pp
peak pulse power
8/20
s pulse; notes 1, 2 and 3
-
30
W
I
FSM
non-repetitive peak forward current
t
p
= 1 ms; square pulse
-
3.5
A
I
ZSM
non-repetitive peak reverse current
t
p
= 1 ms; square pulse
PESD3V3L2UM
-
0.9
A
PESD5V0L2UM
-
0.8
A
P
tot
total power dissipation
T
amb
= 25
C; note 4
-
250
mW
P
ZSM
non-repetitive peak reverse power
dissipation
t
p
= 1 ms; square pulse; see Fig.4
-
6
W
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
ESD
electrostatic discharge
IEC 61000-4-2 (contact discharge)
15
-
kV
HBM MIL-Std 883
10
-
kV
IEC 61000-4-2, level 4 (ESD)
>15 kV (air); >8 kV (contact)
HBM MIL-Std 883, class 3
>4 kV
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
all diodes loaded; note 1
500
K/W
one diode loaded; note 2
290
K/W
2003 Aug 05
4
Philips Semiconductors
Product specification
Low capacitance double ESD protection diode
PESDxL2UM series
ELECTRICAL CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Notes
1. Non-repetitive current pulse 8/20
s exponential decay waveform; see Fig.5.
2. Pins 1 and 3 or 2 and 3.
3. Pins 1 and 2.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per diode
V
F
forward voltage
I
F
= 200 mA
-
1
1.2
V
V
RWM
reverse stand-off voltage
PESD3V3L2UM
-
-
3.3
V
PESD5V0L2UM
-
-
5
V
I
RM
reverse leakage current
PESD3V3L2UM
V
R
= 3.3 V
-
75
300
nA
PESD5V0L2UM
V
R
= 5 V
-
5
25
nA
V
(CL)R
clamping voltage
8/20
s pulse
PESD3V3L2UM
I
pp
= 1 A; notes 1 and 2
-
-
8
V
I
pp
= 3 A; notes 1 and 2
-
-
12
V
I
pp
= 1 A; notes 1 and 3
-
-
9
V
I
pp
= 3 A; notes 1 and 3
-
-
13
V
PESD5V0L2UM
I
pp
= 1 A; notes 1 and 2
-
-
10
V
I
pp
= 2.5 A; notes 1 and 2
-
-
13
V
I
pp
= 1 A; notes 1 and 3
-
-
11
V
I
pp
= 2.5 A; notes 1 and 3
-
-
15
V
V
BR
breakdown voltage
I
Z
= 1 mA
PESD3V3L2UM
5.32
5.6
5.88
V
PESD5V0L2UM
6.46
6.8
7.14
V
S
Z
temperature coefficient
I
Z
= 1 mA
PESD3V3L2UM
-
1.3
-
mV/K
PESD5V0L2UM
-
2.9
-
mV/K
r
diff
differential resistance
I
R
= 1 mA
PESD3V3L2UM
-
-
200
PESD5V0L2UM
-
-
100
C
d
diode capacitance
PESD3V3L2UM
f = 1 MHz; V
R
= 0
-
22
28
pF
f = 1 MHz; V
R
= 5
-
12
17
pF
PESD5V0L2UM
f = 1 MHz; V
R
= 0
-
16
19
pF
f = 1 MHz; V
R
= 5
-
8
11
pF
2003 Aug 05
5
Philips Semiconductors
Product specification
Low capacitance double ESD protection diode
PESDxL2UM series
handbook, halfpage
10
1
10
-
1
MLE215
10
-
2
10
-
1
1
tp (ms)
IZSM
(A)
10
PESD3V3L2UM
PESD5V0L2UM
Fig.2
Non-repetitive peak reverse current as a
function of pulse time (square pulse).
handbook, halfpage
0
5
26
6
10
14
18
22
1
2
3
4
VR (V)
Cd
(pF)
MLE216
PESD3V3L2UM
PESD5V0L2UM
Fig.3
Diode capacitance as a function of reverse
voltage; typical values.
T
j
= 25
C; f = 1 MHz.
handbook, halfpage
10
1
10
2
MLE217
10
-
2
10
-
1
1
tp (ms)
PZSM
(W)
10
PESD3V3L2UM
PESD5V0L2UM
Fig.4
Maximum non-repetitive peak reverse
power dissipation as a function of pulse
duration (square pulse).
P
ZSM
= V
ZSM
x I
ZSM
.
V
ZSM
is the non-repetitive peak reverse voltage at I
ZSM
.
handbook, halfpage
0
10
e
-
t
20
t (
s)
Ipp
(%)
40
120
0
40
80
30
MLE218
100 % Ipp; 8
s
50 % Ipp; 20
s
Fig.5
8/20
s pulse waveform according to
IEC 61000-4-5.
2003 Aug 05
6
Philips Semiconductors
Product specification
Low capacitance double ESD protection diode
PESDxL2UM series
handbook, full pagewidth
MLE219
450
50
Note 1: IEC 61000-4-2 network
CZ = 150 pF; RZ = 330
D.U.T
PESDxL2UM
RG 223/U
50
coax
RZ
CZ
ESD TESTER
4 GHz DIGITAL
OSCILLOSCOPE
10
ATTENUATOR
GND
GND1
GND2
GND
GND
unclamped
+
1 kV ESD voltage waveform
(IEC 61000-4-2 network)
clamped
+
1 kV ESD voltage waveform
(IEC 61000-4-2 network)
unclamped
-
1 kV ESD voltage waveform
(IEC 61000-4-2 network)
clamped
-
1 kV ESD voltage waveform
(IEC 61000-4-2 network)
vertical scale = 5 V/div
horizontal scale = 50 ns/div
vertical scale = 200 V/div
horizontal scale = 50 ns/div
vertical scale = 200 V/div
horizontal scale = 50 ns/div
vertical scale = 5 V/div
horizontal scale = 50 ns/div
PESD5V0L2UM
PESD3V3L2UM
note 1
1
2
3
Fig.6 ESD clamping test set-up and waveforms.
2003 Aug 05
7
Philips Semiconductors
Product specification
Low capacitance double ESD protection diode
PESDxL2UM series
PACKAGE OUTLINE
UNIT
A
1
max.
A
(1)
b
b
1
e
1
e
L
L
1
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
mm
0.50
0.46
0.20
0.12
0.55
0.47
0.03
0.62
0.55
0.35
0.65
DIMENSIONS (mm are the original dimensions)
Note
1. Including plating thickness
0.30
0.22
0.30
0.22
SOT883
SC-101
03-02-05
03-04-03
D
E
1.02
0.95
L
E
2
3
1
b
b1
A1
A
D
L1
0
0.5
1 mm
scale
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm
SOT883
e
e1
2003 Aug 05
8
Philips Semiconductors
Product specification
Low capacitance double ESD protection diode
PESDxL2UM series
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
LEVEL
DATA SHEET
STATUS
(1)
PRODUCT
STATUS
(2)(3)
DEFINITION
I
Objective data
Development
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
DEFINITIONS
Short-form specification
The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition
Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications
These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status `Production'), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
Koninklijke Philips Electronics N.V. 2003
SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Philips Semiconductors a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands
613514/01/pp
9
Date of release:
2003 Aug 05
Document order number:
9397 750 11644