DATA SHEET
Product specification
2004 Mar 23
DISCRETE SEMICONDUCTORS
PESD3V3L5UY; PESD5V0L5UY
Low capacitance 5-fold ESD
protection diode arrays in SOT363
package
book, halfpage
MBD128
2004 Mar 23
2
Philips Semiconductors
Product specification
Low capacitance 5-fold ESD protection
diode arrays in SOT363 package
PESD3V3L5UY;
PESD5V0L5UY
FEATURES
Uni-directional ESD protection of up to five lines
Bi-directional ESD protection of up to four lines
Low diode capacitance
Maximum peak pulse power: P
pp
= 25 W at t
p
= 8/20
s
Low clamping voltage: V
CL(R)
= 12 V at I
pp
= 2.5 A
Ultra low leakage current: I
RM
= 8 nA at V
RWM
= 5 V
ESD protection > 20 kV
IEC 61000-4-2; level 4 (ESD)
IEC 61000-4-5 (surge); I
pp
= 2.5 A at T
p
= 8/20
s.
APPLICATIONS
Cellular handsets and accessories
Portable electronics
Computers and peripherals
Communications systems
Audio and video equipment.
DESCRIPTION
Low capacitance 5-fold ESD protection array in the very
small SOT363 plastic package designed to protect up to
five transmission or data lines from the damage caused by
Electrostatic Discharge (ESD).
MARKING
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
TYPE NUMBER
MARKING CODE
(1)
PESD3V3L5UY
*K3
PESD5V0L5UY
*K4
PINNING
PIN
DESCRIPTION
1
cathode 1
2
common anode
3
cathode 2
4
cathode 3
5
cathode 4
6
cathode 5
001aaa212
1
3
2
4
5
6
1
3
4
2
5
6
sym011
Fig.1 Simplified outline (SOT363) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VALUE
UNIT
V
RWM
reverse standoff voltage
PESD3V3L5UY
3.3
V
PESD5V0L5UY
5
V
C
d
diode capacitance
PESD3V3L5UY
22
pF
PESD5V0L5UY
16
pF
number of protected lines 5
ORDERING INFORMATION
TYPE NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
PESD3V3L5UY
-
plastic surface mounted package; 6 leads
SOT363
PESD5V0L5UY
-
plastic surface mounted package; 6 leads
SOT363
2004 Mar 23
3
Philips Semiconductors
Product specification
Low capacitance 5-fold ESD protection
diode arrays in SOT363 package
PESD3V3L5UY;
PESD5V0L5UY
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Non-repetitive current pulse 8/20
s exponentially decaying waveform; see Fig.2.
2. Measured from any of pins 1, 3, 4, 5 or 6 to pin 2.
ESD maximum ratings
Notes
1. Device stressed with ten non-repetitive Electrostatic Discharge (ESD) pulses; see Fig.3.
2. Measured from any of pins 1, 3, 4, 5 or 6 to pin 2.
ESD standards compliance
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
P
pp
peak pulse power
8/20
s pulse; notes 1 and 2
-
25
W
I
pp
peak pulse current
8/20
s pulse; notes 1 and 2
-
2.5
A
T
j
junction temperature
-
150
C
T
amb
operating ambient temperature
-
65
+150
C
T
stg
storage temperature
-
65
+150
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Per diode
ESD
electrostatic discharge capability
IEC 61000-4-2 (contact discharge);
notes 1 and 2
20
kV
HBM MIL-Std 883
10
kV
ESD STANDARD
CONDITIONS
IEC 61000-4-2, level 4 (ESD)
> 15 kV (air); > 8 kV (contact)
HBM MIL-Std 883, class 3
> 4 kV
2004 Mar 23
4
Philips Semiconductors
Product specification
Low capacitance 5-fold ESD protection
diode arrays in SOT363 package
PESD3V3L5UY;
PESD5V0L5UY
handbook, halfpage
0
10
e
-
t
20
t (
s)
Ipp
(%)
40
120
0
40
80
30
MLE218
100 % Ipp; 8
s
50 % Ipp; 20
s
Fig.2
8/20
s pulse waveform according to
IEC 61000-4-5.
001aaa191
I
pp
100 %
90 %
t
30 ns
60 ns
10 %
t
r
=
0.7 to 1 ns
Fig.3
Electrostatic Discharge (ESD) pulse
waveform according to IEC 61000-4-2.
2004 Mar 23
5
Philips Semiconductors
Product specification
Low capacitance 5-fold ESD protection
diode arrays in SOT363 package
PESD3V3L5UY;
PESD5V0L5UY
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
Notes
1. Non-repetitive current pulse 8/20
s exponentially decaying waveform; see Fig.2.
2. Measured from any of pins 1, 3, 4, 5 or 6 to pin 2.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per diode
V
RWM
reverse stand-off voltage
PESD3V3L5UY
-
-
3.3
V
PESD5V0L5UY
-
-
5
V
I
RM
reverse leakage current
PESD3V3L5UY
V
RWM
= 3.3 V
-
75
300
nA
PESD5V0L5UY
V
RWM
= 5 V
-
5
25
nA
V
BR
breakdown voltage
I
Z
= 1 mA
PESD3V3L5UY
5.3
5.6
5.9
V
PESD5V0L5UY
6.4
6.8
7.2
V
C
d
diode capacitance
f = 1 MHz; V
R
= 0 V;
see Fig.5
PESD3V3L5UY
-
22
28
pF
PESD5V0L5UY
-
16
19
pF
V
CL(R)
clamping voltage
notes 1 and 2
PESD3V3L5UY
I
pp
= 1 A
-
-
10
V
I
pp
= 2.5 A
-
-
12
V
PESD5V0L5UY
I
pp
= 1 A
-
-
10
V
I
pp
= 2.5 A
-
-
12
V
r
diff
differential resistance
I
R
= 1 mA
PESD3V3L5UY
-
-
200
PESD5V0L5UY
-
-
100
2004 Mar 23
6
Philips Semiconductors
Product specification
Low capacitance 5-fold ESD protection
diode arrays in SOT363 package
PESD3V3L5UY;
PESD5V0L5UY
GRAPHICAL DATA
001aaa208
t
p
(
s)
1
10
4
10
3
10
10
2
10
10
2
P
pp
(W)
1
Fig.4
Peak pulse power dissipation as a function
of pulse time; typical values.
T
amb
= 25
C.
I
pp
= 8/20
s exponentially decaying waveform; see Fig.2.
001aaa209
0.4
0.8
0.2
0.6
1.0
0
T
j
(
C)
0
150
100
50
P
pp(Tj)
P
pp(Tj=25
C)
Fig.5
Relative variation of peak pulse power as a
function of junction temperature; typical
values.
V
R
(V)
0
5
4
2
3
1
(1)
(2)
001aaa210
10
5
15
25
20
C
d
(pF)
0
Fig.6
Diode capacitance as a function of reverse
voltage; typical values.
(1) PESD3V3L5UY.
(2) PESD5V0L5UY.
f = 1 MHz; T
amb
= 25
C.
001aaa211
T
j
(
C)
-
75
-
25
175
125
25
75
1
10
10
-
1
I
R(Tj)
I
R(Tj=25
C)
Fig.7
Relative variation of reverse leakage
current as a function of junction
temperature; typical values.
2004 Mar 23
7
Philips Semiconductors
Product specification
Low capacitance 5-fold ESD protection
diode arrays in SOT363 package
PESD3V3L5UY;
PESD5V0L5UY
001aaa218
50
R
Z
C
Z
D.U.T.: PESDxL5UY
Note 1: Attenuator is only used for open
socket high voltage measurements
vertical scale = 200 V/div
horizontal scale = 50 ns/div
unclamped
+
1 kV ESD voltage waveform
(IEC61000-4-2 network)
clamped
+
1 kV ESD voltage waveform
(IEC61000-4-2 network)
unclamped
-
1 kV ESD voltage waveform
(IEC61000-4-2 network)
clamped
-
1 kV ESD voltage waveform
(IEC61000-4-2 network)
vertical scale = 5 V/div
horizontal scale = 50 ns/div
vertical scale = 200 V/div
horizontal scale = 50 ns/div
vertical scale = 5 V/div
horizontal scale = 50 ns/div
GND
GND
GND1
GND2
GND
450
RG 223/U
50
coax
ESD TESTER
4 GHz DIGITAL
OSCILLOSCOPE
10
ATTENUATOR
note 1
IEC 61000-4-2 network
C
Z
= 150 pF; R
Z
= 330
PESD5V0L5UY
PESD3V3L5UY
Fig.8 ESD clamping test set-up and waveforms.
2004 Mar 23
8
Philips Semiconductors
Product specification
Low capacitance 5-fold ESD protection
diode arrays in SOT363 package
PESD3V3L5UY;
PESD5V0L5UY
APPLICATION INFORMATION
The PESDxL5UY is designed for the uni-directional protection of up to five lines or bi-directional protection of four lines
from the damage caused by Electrostatic Discharge (ESD) and surge pulses. The PESDxL5UY may be used on lines
where the signal polarities are above or below ground. PESDxL5UY can withstand and provides protection from a surge
of 25 watts peak pulse power per line for a 8/20
s waveform.
001aaa216
PESDxL5UY
GND
high speed data lines
Fig.9
Typical application for uni-directional
protection of five lines.
001aaa214
PESDxL5UY
GND
high speed data lines
Fig.10 Typical application for bi-directional
protection of four lines.
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD,
Electrical Fast Transient (EFT) and surge transients. The
following guidelines are recommended:
1. The protection device should be placed as closely as
possible to the input terminal or connector.
2. The path length between the protection device and the
protected line should be as short as possible.
3. Parallel signal paths should be kept to a minimum.
4. Running protection conductors in parallel with
unprotected conductor should be avoided.
5. All printed-circuit board conductive loops (including
power and group loops) should be kept to a minimum.
6. The length of the transient return path to ground
should be kept to a minimum.
7. The use of shared transient return paths to a common
ground point should be avoided.
8. Ground planes should be used whenever possible.
9. For multilayer printed-circuit boards, ground vias
should be used.
2004 Mar 23
9
Philips Semiconductors
Product specification
Low capacitance 5-fold ESD protection
diode arrays in SOT363 package
PESD3V3L5UY;
PESD5V0L5UY
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT363
SC-88
w
B
M
bp
D
e1
e
pin 1
index
A
A1
Lp
Q
detail X
HE
E
v
M
A
A
B
y
0
1
2 mm
scale
c
X
1
3
2
4
5
6
Plastic surface mounted package; 6 leads
SOT363
UNIT
A1
max
bp
c
D
E
e
1
HE
Lp
Q
y
w
v
mm
0.1
0.30
0.20
2.2
1.8
0.25
0.10
1.35
1.15
0.65
e
1.3
2.2
2.0
0.2
0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
0.25
0.15
A
1.1
0.8
97-02-28
2004 Mar 23
10
Philips Semiconductors
Product specification
Low capacitance 5-fold ESD protection
diode arrays in SOT363 package
PESD3V3L5UY;
PESD5V0L5UY
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
LEVEL
DATA SHEET
STATUS
(1)
PRODUCT
STATUS
(2)(3)
DEFINITION
I
Objective data
Development
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
DEFINITIONS
Short-form specification
The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition
Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications
These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status `Production'), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
Koninklijke Philips Electronics N.V. 2004
SCA76
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Philips Semiconductors a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands
R76/01/pp
11
Date of release:
2004 Mar 23
Document order number:
9397 750 12255
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