Product profile

1.1 General description

Ultra low capacitance ElectroStatic Discharge (ESD) protection diode in a SOT23
(TO-236AB) small SMD plastic package designed to protect one high-speed data line
from the damage caused by ESD and other transients.

1.2 Features

1.3 Applications

1.4 Quick reference data

[1]

Measured from pin 1 to 2

PESDxU1UT series

Ultra low capacitance ESD protection diode in SOT23 package

Rev. 01 -- 11 May 2005

Product data sheet

Unidirectional ESD protection of one line

ESD protection > 23 kV

Ultra low diode capacitance: C

= 0.6 pF

IEC 61000-4-2; level 4 (ESD)

Max. peak pulse power: P

up to 200 W

IEC 61000-4-5; (surge)

Low clamping voltage

10/100/1000 Ethernet

Local Area Network (LAN) equipment

FireWire

Computers and peripherals

Communication systems

High-speed datalines

Table 1:

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

RWM

reverse stand-off voltage

PESD3V3U1UT

3.3

PESD5V0U1UT

5.0

PESD12VU1UT

PESD15VU1UT

PESD24VU1UT

diode capacitance

f = 1 MHz; V

= 0 V

[1]

0.6

1.5

9397 750 14912

Product data sheet

Rev. 01 -- 11 May 2005

2 of 13

Philips Semiconductors

PESDxU1UT series

Ultra low capacitance ESD protection diode in SOT23 package

Pinning information

Ordering information

Marking

[1]

* = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

Table 2:

Pinning

Pin

Description

Simplified outline

Symbol

cathode ESD protection diode

cathode compensation diode

common anode

006aaa441

Table 3:

Ordering information

Type number

Package

Name

Description

Version

PESD3V3U1UT

plastic surface mounted package; 3 leads

SOT23

PESD5V0U1UT

PESD12VU1UT

PESD15VU1UT

PESD24VU1UT

Table 4:

Marking codes

Type number

Marking code

[1]

PESD3V3U1UT

*AP

PESD5V0U1UT

*AQ

PESD12VU1UT

*AR

PESD15VU1UT

*AS

PESD24VU1UT

*AT

9397 750 14912

Product data sheet

Rev. 01 -- 11 May 2005

3 of 13

Philips Semiconductors

PESDxU1UT series

Ultra low capacitance ESD protection diode in SOT23 package

Limiting values

[1]

Non-repetitive current pulse 8/20

s exponential decay waveform according to IEC 61000-4-5.

Table 5:

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

peak pulse power

8/20

[1]

PESD3V3U1UT

PESD5V0U1UT

PESD12VU1UT

200

PESD15VU1UT

200

PESD24VU1UT

200

peak pulse current

8/20

[1]

PESD3V3U1UT

PESD5V0U1UT

PESD12VU1UT

PESD15VU1UT

PESD24VU1UT

junction temperature

150

amb

ambient temperature

+150

stg

storage temperature

+150

9397 750 14912

Product data sheet

Rev. 01 -- 11 May 2005

4 of 13

Philips Semiconductors

PESDxU1UT series

Ultra low capacitance ESD protection diode in SOT23 package

[1]

Device stressed with ten non-repetitive ESD pulses.

[2]

Measured from pin 1 to 2

Table 6:

ESD maximum ratings

Symbol

Parameter

Conditions

Min

Max

Unit

ESD

electrostatic discharge voltage

IEC 61000-4-2
(contact discharge)

[1] [2]

PESD3V3U1UT

PESD5V0U1UT

PESD12VU1UT

PESD15VU1UT

PESD24VU1UT

PESDxU1UT

HBM MIL-STD-883

Table 7:

ESD standards compliance

Standard

Conditions

IEC 61000-4-2; level 4 (ESD)

> 15 kV (air); > 8 kV (contact)

HBM MIL-STD-883; class 3

> 4 kV

Fig 1.

8/20

s pulse waveform according to

IEC 61000-4-5

Fig 2.

ESD pulse waveform according to
IEC 61000-4-2

t (

001aaa630

120

(%)

100 % I

; 8

50 % I

; 20

001aaa631

100 %

90 %

30 ns

60 ns

10 %

0.7 ns to 1 ns

9397 750 14912

Product data sheet

Rev. 01 -- 11 May 2005

5 of 13

Philips Semiconductors

PESDxU1UT series

Ultra low capacitance ESD protection diode in SOT23 package

Characteristics

[1]

Non-repetitive current pulse 8/20

s exponential decay waveform according to IEC 61000-4-5.

[2]

Measured from pin 1 to 2

Table 8:

Characteristics

amb

= 25

C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

RWM

reverse stand-off voltage

PESD3V3U1UT

3.3

PESD5V0U1UT

5.0

PESD12VU1UT

PESD15VU1UT

PESD24VU1UT

reverse leakage current

PESD3V3U1UT

RWM

= 3.3 V

0.25

PESD5V0U1UT

RWM

= 5.0 V

0.03

PESD12VU1UT

RWM

= 12 V

< 1

PESD15VU1UT

RWM

= 15 V

< 1

PESD24VU1UT

RWM

= 24 V

< 1

breakdown voltage

= 5 mA

[2]

PESD3V3U1UT

5.8

6.4

6.9

PESD5V0U1UT

7.0

7.6

8.2

PESD12VU1UT

14.2

15.0

16.7

PESD15VU1UT

17.1

18.9

20.3

PESD24VU1UT

25.4

27.8

30.3

diode capacitance

f = 1 MHz; V

= 0 V

[2]

0.6

1.5

clamping voltage

[1] [2]

PESD3V3U1UT

= 1 A

= 5 A

PESD5V0U1UT

= 1 A

= 5 A

PESD12VU1UT

= 1 A

= 5 A

PESD15VU1UT

= 1 A

= 5 A

PESD24VU1UT

= 1 A

= 3 A

dif

differential resistance

= 1 mA

PESD3V3U1UT

400

PESD5V0U1UT

PESD12VU1UT

200

PESD15VU1UT

225

PESD24VU1UT

300

9397 750 14912

Product data sheet

Rev. 01 -- 11 May 2005

7 of 13

Philips Semiconductors

PESDxU1UT series

Ultra low capacitance ESD protection diode in SOT23 package

Application information

The PESDxU1UT series is designed for protection of high-speed datalines from damage
caused by ESD and surge pulses. PESDxU1UT devices combine an ESD protection
diode and an ultra low capacitance compensation diode to ensure an effective device
capacitance as low as 0.6 pF. The PESDxU1UT series provides a surge capability of up to
200 W per line for an 8/20

s waveform.

Two PESDxU1UT devices in anti-parallel configuration provide ESD protection in a
common-mode application.

The two PESDxU1UT devices should be connected as follows:

protected data line is connected to

device 1 / pin 2

device 2 / pin 1

Ground is connected to

device 1 / pin 1

device 2 / pin 2

pin 3 is not connected for both devices

Fig 5.

Bi-directional ESD protection of one line, common mode

Two PESDxU1UT devices in anti-parallel configuration provide ESD protection in a
differential-mode configuration as e.g. for Ethernet applications.

The two PESDxU1UT should be connected as follows:

I/O line 1 is connected to

device 1 / pin 2

device 2 / pin 1

I/O line 2 is connected to

device 1 / pin 1

device 2 / pin 2

pin 3 is not connected for both devices

Fig 6.

Differential mode Ethernet protection

006aaa443

n.c.

protected data line

ground

PESDxU1UT

ETHERNET

TRANSCEIVER

006aaa444

n.c.

I/O 1

I/O 2

PESDxU1UT

9397 750 14912

Product data sheet

Rev. 01 -- 11 May 2005

8 of 13

Philips Semiconductors

PESDxU1UT series

Ultra low capacitance ESD protection diode in SOT23 package

Circuit board layout and protection device placement

Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:

1. Place the PESDxU1UT as close to the input terminal or connector as possible.

2. The path length between the PESDxU1UT and the protected line should be

minimized.

3. Keep parallel signal paths to a minimum.

4. Avoid running protected conductors in parallel with unprotected conductors.

5. Minimize all printed-circuit board conductive loops including power and ground loops.

6. Minimize the length of the transient return path to ground.

7. Avoid using shared transient return paths to a common ground point.

8. Ground planes should be used whenever possible. For multilayer printed-circuit

boards, use ground vias.

9397 750 14912

Product data sheet

Rev. 01 -- 11 May 2005

9 of 13

Philips Semiconductors

PESDxU1UT series

Ultra low capacitance ESD protection diode in SOT23 package

Test information

Fig 7.

ESD clamping test set-up and waveforms

006aaa445

D.U.T.

(Device

Under

Test)

vertical scale = 200 V/div
horizontal scale = 50 ns/div

unclamped

1 kV ESD voltage waveform

(IEC 61000-4-2 network)

clamped

1 kV ESD voltage waveform

(IEC 61000-4-2 network)

unclamped

1 kV ESD voltage waveform

(IEC 61000-4-2 network)

clamped

1 kV ESD voltage waveform

(IEC 61000-4-2 network)

vertical scale = 200 V/div
horizontal scale = 50 ns/div

vertical scale = 20 V/div
horizontal scale = 50 ns/div

vertical scale = 20 V/div; horizontal scale = 50 ns/div

GND

450

RG 223/U
50

coax

ESD TESTER

IEC 61000-4-2 network
C

= 150 pF; R

= 330

4 GHz DIGITAL

OSCILLOSCOPE

ATTENUATOR

GND

PESD3V3U1UT

PESD5V0U1UT

PESD12VU1UT

PESD15VU1UT

PESD24VU1UT

9397 750 14912

Product data sheet

Rev. 01 -- 11 May 2005

10 of 13

Philips Semiconductors

PESDxU1UT series

Ultra low capacitance ESD protection diode in SOT23 package

Package outline

10. Packing information

[1]

For further information and the availability of packing methods, see

Section 16

Fig 8.

Package outline SOT23 (TO-236AB)

04-11-04

Dimensions in mm

0.45
0.15

1.9

1.1
0.9

3.0
2.8

2.5
2.1

1.4
1.2

0.48
0.38

0.15
0.09

Table 9:

Packing methods

The -xxx numbers are the last three digits of the 12NC ordering code.

[1]

Type number

Package

Description

Packing quantity

3000

10000

PESD3V3U1UT

SOT23

4 mm pitch, 8 mm tape and reel

-215

-235

PESD5V0U1UT

PESD12VU1UT

PESD15VU1UT

PESD24VU1UT

Philips Semiconductors

PESDxU1UT series

Ultra low capacitance ESD protection diode in SOT23 package

9397 750 14912

Product data sheet

Rev. 01 -- 11 May 2005

12 of 13

12. Data sheet status

[1]

Please consult the most recently issued data sheet before initiating or completing a design.

[2]

The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.

[3]

For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

13. Definitions

Short-form specification -- The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.

Limiting values definition -- Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.

Application information -- Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.

14. Disclaimers

Life support -- These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors

customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes -- Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status `Production'),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.

15. Trademarks

Notice -- All referenced brands, product names, service names and
trademarks are the property of their respective owners.

16. Contact information

For additional information, please visit: http://www.semiconductors.philips.com

For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com

Level

Data sheet status

[1]

Product status

[2] [3]

Definition

Objective data

Development

This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.

Preliminary data

Qualification

This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.

III

Product data

Production

This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).

All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.

Date of release: 11 May 2005

Document number: 9397 750 14912

Published in The Netherlands

Philips Semiconductors

PESDxU1UT series

Ultra low capacitance ESD protection diode in SOT23 package

17. Contents

Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1

General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3

Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4

Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

Pinning information . . . . . . . . . . . . . . . . . . . . . . 2

Ordering information . . . . . . . . . . . . . . . . . . . . . 2

Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Application information. . . . . . . . . . . . . . . . . . . 7

Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9

Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10

Packing information. . . . . . . . . . . . . . . . . . . . . 10

Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11

Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12

Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Contact information . . . . . . . . . . . . . . . . . . . . 12

Document Outline

Ð­Ð»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: PESD5V0U1UT

Document Outline

ÐÐ»ÐµÐºÑ‚Ñ€Ð¾Ð½Ð½Ñ‹Ð¹ ÐºÐ¾Ð¼Ð¿Ð¾Ð½ÐµÐ½Ñ‚: PESD5V0U1UT