DATA SHEET
Product specification
Supersedes data of 2003 Aug 20
2004 Apr 15
DISCRETE SEMICONDUCTORS
PESDxS2UT series
Double ESD protection diodes in
SOT23 package
2004 Apr 15
2
Philips Semiconductors
Product specification
Double ESD protection diodes
in SOT23 package
PESDxS2UT series
FEATURES
Uni-directional ESD protection of up to two lines
Max. peak pulse power: P
pp
= 330 W at t
p
= 8/20
s
Low clamping voltage: V
(CL)R
= 20 V at I
pp
= 18 A
Ultra-low reverse leakage current: I
RM
< 700 nA
ESD protection > 23 kV
IEC 61000-4-2; level 4 (ESD)
IEC 61000-4-5 (surge); I
pp
= 18 A at t
p
= 8/20
s.
APPLICATIONS
Computers and peripherals
Communication systems
Audio and video equipment
High speed data lines
Parallel ports.
DESCRIPTION
Uni-directional double ESD protection diodes in a SOT23
plastic package. Designed to protect up to two
transmission or data lines from ElectroStatic Discharge
(ESD) damage.
MARKING
Note
1. * = p : made in Hong Kong.
* = t : made in Malaysia.
* = W : made in China.
QUICK REFERENCE DATA
PINNING
TYPE NUMBER
MARKING CODE
(1)
PESD3V3S2UT
*U9
PESD5V2S2UT
*U1
PESD12VS2UT
*U2
PESD15VS2UT
*U3
PESD24VS2UT
*U4
SYMBOL
PARAMETER
VALUE
UNIT
V
RWM
reverse stand-off
voltage
3.3, 5.2, 12, 15
and 24
V
C
d
diode capacitance
V
R
= 0 V;
f = 1 MHz
207, 152, 38, 32
and 23
pF
number of
protected lines
2
PIN
DESCRIPTION
1
cathode 1
2
cathode 2
3
common anode
sym022
2
1
3
1
2
001aaa490
3
Fig.1 Simplified outline (SOT23) and symbol.
2004 Apr 15
3
Philips Semiconductors
Product specification
Double ESD protection diodes
in SOT23 package
PESDxS2UT series
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Non-repetitive current pulse 8/20
s exponential decay waveform; see Fig.2.
2. Measured across either pins 1 and 3 or pins 2 and 3.
TYPE NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
PESD3V3S2UT
-
plastic surface mounted package; 3 leads
SOT23
PESD5V2S2UT
PESD12VS2UT
PESD15VS2UT
PESD24VS2UT
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
P
pp
peak pulse power
8/20
s pulse; notes 1 and 2
PESD3V3S2UT
-
330
W
PESD5V2S2UT
-
260
W
PESD12VS2UT
-
180
W
PESD15VS2UT
-
160
W
PESD24VS2UT
-
160
W
I
pp
peak pulse current
8/20
s pulse; notes 1 and 2
PESD3V3S2UT
-
18
A
PESD5V2S2UT
-
15
A
PESD12VS2UT
-
5
A
PESD15VS2UT
-
5
A
PESD24VS2UT
-
3
A
T
j
junction temperature
-
150
C
T
amb
operating ambient temperature
-
65
+150
C
T
stg
storage temperature
-
65
+150
C
2004 Apr 15
4
Philips Semiconductors
Product specification
Double ESD protection diodes
in SOT23 package
PESDxS2UT series
ESD maximum ratings
Notes
1. Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Fig.3.
2. Measured across either pins 1 and 3 or pins 2 and 3.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
ESD
electrostatic discharge
capability
IEC 61000-4-2 (contact discharge);
notes 1 and 2
PESD3V3S2UT
30
kV
PESD5V2S2UT
30
kV
PESD12VS2UT
30
kV
PESD15VS2UT
30
kV
PESD24VS2UT
23
kV
HBM MIL-Std 883
PESDxS2UT series
10
kV
ESD standards compliance
ESD STANDARD
CONDITIONS
IEC 61000-4-2; level 4 (ESD); see Fig.3
>15 kV (air); > 8 kV (contact)
HBM MIL-Std 883; class 3
>4 kV
handbook, halfpage
0
10
e
-
t
20
t (
s)
Ipp
(%)
40
120
0
40
80
30
MLE218
100 % Ipp; 8
s
50 % Ipp; 20
s
Fig.2
8/20
s pulse waveform according to
IEC 61000-4-5.
001aaa191
I
pp
100 %
90 %
t
30 ns
60 ns
10 %
t
r
=
0.7 to 1 ns
Fig.3
ElectroStatic Discharge (ESD) pulse
waveform according to IEC 61000-4-2.
2004 Apr 15
5
Philips Semiconductors
Product specification
Double ESD protection diodes
in SOT23 package
PESDxS2UT series
ELECTRICAL CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
RWM
reverse stand-off voltage
PESD3V3S2UT
-
-
3.3
V
PESD5V2S2UT
-
-
5.2
V
PESD12VS2UT
-
-
12
V
PESD15VS2UT
-
-
15
V
PESD24VS2UT
-
-
24
V
I
RM
reverse leakage current
PESD3V3S2UT
V
RWM
= 3.3 V
-
0.7
2
A
PESD5V2S2UT
V
RWM
= 5.2 V
-
0.15
1
A
PESD12VS2UT
V
RWM
= 12 V
-
<0.02
1
A
PESD15VS2UT
V
RWM
= 15 V
-
<0.02
1
A
PESD24VS2UT
V
RWM
= 24 V
-
<0.02
1
A
V
BR
breakdown voltage
I
Z
= 5 mA
PESD3V3S2UT
5.2
5.6
6.0
V
PESD5V2S2UT
6.4
6.8
7.2
V
PESD12VS2UT
14.7
15.0
15.3
V
PESD15VS2UT
17.6
18.0
18.4
V
PESD24VS2UT
26.5
27.0
27.5
V
C
d
diode capacitance
f = 1 MHz; V
R
= 0 V
PESD3V3S2UT
-
207
300
pF
PESD5V2S2UT
-
152
200
pF
PESD12VS2UT
-
38
75
pF
PESD15VS2UT
-
32
70
pF
PESD24VS2UT
-
23
50
pF
V
(CL)R
clamping voltage
notes 1 and 2
PESD3V3S2UT
I
pp
= 1 A
-
-
7
V
I
pp
= 18 A
-
-
20
V
PESD5V2S2UT
I
pp
= 1 A
-
-
9
V
I
pp
= 15 A
-
-
20
V
PESD12VS2UT
I
pp
= 1 A
-
-
19
V
I
pp
= 5 A
-
-
35
V
PESD15VS2UT
I
pp
= 1 A
-
-
23
V
I
pp
= 5 A
-
-
40
V
PESD24VS2UT
I
pp
= 1 A
-
-
36
V
I
pp
= 3 A
-
-
70
V
2004 Apr 15
6
Philips Semiconductors
Product specification
Double ESD protection diodes
in SOT23 package
PESDxS2UT series
Notes
1. Non-repetitive current pulse 8/20
s exponential decay waveform; see Fig.2.
2. Measured either across pins 1 and 3 or pins 2 and 3.
R
diff
differential resistance
PESD3V3S2UT
I
R
= 1 mA
-
-
400
PESD5V2S2UT
I
R
= 1 mA
-
-
80
PESD12VS2UT
I
R
= 1 mA
-
-
200
PESD15VS2UT
I
R
= 1 mA
-
-
225
PESD24VS2UT
I
R
= 0.5 mA
-
-
300
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
GRAPHICAL DATA
001aaa147
10
3
10
2
10
4
P
pp
(W)
10
t
p
(
s)
1
10
4
10
3
10
10
2
(1)
(2)
Fig.4
Peak pulse power dissipation as a function
of pulse time; typical values.
T
amb
= 25
C.
t
p
= 8/20
s exponential decay waveform; see Fig.2.
(1) PESD3V3S2UT and PESD5V2S2UT.
(2) PESD12VS2UT, PESD15VS2UT, PESD24VS2UT
T
j
(
C)
0
200
150
50
100
001aaa193
0.4
0.8
1.2
P
pp
0
P
pp(25C)
Fig.5
Relative variation of peak pulse power as a
function of junction temperature; typical
values.
2004 Apr 15
7
Philips Semiconductors
Product specification
Double ESD protection diodes
in SOT23 package
PESDxS2UT series
V
R
(V)
0
5
4
2
3
1
001aaa148
120
160
80
200
240
C
d
(pF)
40
(1)
(2)
Fig.6
Diode capacitance as a function of reverse
voltage; typical values.
T
amb
= 25
C; f = 1 MHz.
(1) PESD3V3S2UT; V
RWM
= 3.3 V.
(2) PESD5V2S2UT; V
RWM
= 5 V.
V
R
(V)
0
25
20
10
15
5
001aaa149
20
30
10
40
50
C
d
(pF)
0
(1)
(3)
(2)
Fig.7
Diode capacitance as a function of reverse
voltage; typical values.
T
amb
= 25
C; f = 1 MHz.
(1) PESD12VS2UT; V
RWM
= 12 V.
(2) PESD15VS2UT; V
RWM
= 15 V.
(3) PESD24VS2UT; V
RWM
= 24 V.
2004 Apr 15
8
Philips Semiconductors
Product specification
Double ESD protection diodes
in SOT23 package
PESDxS2UT series
001aaa270
1
10
10
-
1
T
j
(
C)
-
100
150
100
0
50
-
50
I
R
I
R(25C)
(1)
Fig.8
Relative variation of reverse leakage
current as a function of junction
temperature; typical values.
I
R
is less than 10 nA at 150
C for:
PESD12V52UT; V
RWM
= 12 V.
PESD15VS2UT; V
RWM
= 15 V.
PESD24VS2UT; V
RWM
= 24 V.
(1) PESD3V3S2UT; V
RWM
= 3.3 V.
PESD5V2S2UT; V
RWM
= 5 V.
2004 Apr 15
9
Philips Semiconductors
Product specification
Double ESD protection diodes
in SOT23 package
PESDxS2UT series
001aaa492
450
50
Note 1: IEC61000-4-2 network
C
Z
= 150 pF; R
Z
= 330
D.U.T.: PESDxS2UT
RG 223/U
50
coax
R
Z
C
Z
ESD TESTER
4 GHz DIGITAL
OSCILLOSCOPE
10
ATTENUATOR
vertical scale = 200 V/div
horizontal scale = 50 ns/div
vertical scale = 20 V/div
horizontal scale = 50 ns/div
vertical scale = 200 V/div
horizontal scale = 50 ns/div
vertical scale = 10 V/div
horizontal scale = 50 ns/div
GND
GND
GND
GND
GND
GND
GND
unclamped
+
1 kV ESD voltage waveform
(IEC61000-4-2 network)
clamped
+
1 kV ESD voltage waveform
(IEC61000-4-2 network)
GND
unclamped
-
1 kV ESD voltage waveform
(IEC61000-4-2 network)
clamped
-
1 kV ESD voltage waveform
(IEC61000-4-2 network)
note 1
PESD24VS2UT
PESD15VS2UT
PESD12VS2UT
PESD5V2S2UT
PESD3V3S2UT
Fig.9 ESD clamping test set-up and waveforms.
2004 Apr 15
10
Philips Semiconductors
Product specification
Double ESD protection diodes
in SOT23 package
PESDxS2UT series
APPLICATION INFORMATION
The PESDxS2UT series is designed for uni-directional protection for up to two lines against damage caused by
ElectroStatic Discharge (ESD) and surge pulses. The PESDxS2UT series may be used on lines where the signal
polarities are below ground. PESDxS2UT series provide a surge capability of up to 330 W (P
pp
) per line for an 8/20
s
waveform.
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The
following guidelines are recommended:
Place the PESDxS2UT as close as possible to the input terminal or connector.
The path length between the PESDxS2UT and the protected line should be minimized.
Keep parallel signal paths to a minimum.
Avoid running protected conductors in parallel with unprotected conductors.
Minimize all printed-circuit board conductive loops including power and ground loops.
Minimize the length of transient return paths to ground.
Avoid using shared return paths to a common ground point.
Ground planes should be used whenever possible. For multilayer printed-circuit boards use ground vias.
001aaa491
PESDxS2UT
line 1 to be protected
unidirectional protection
of two lines
bidirectional protection
of one line
line 2 to be protected
ground
PESDxS2UT
line 1 to be protected
ground
Fig.10 Typical application: ESD protection of data lines.
2004 Apr 15
11
Philips Semiconductors
Product specification
Double ESD protection diodes
in SOT23 package
PESDxS2UT series
PACKAGE OUTLINE
UNIT
A
1
max.
b
p
c
D
E
e
1
H
E
L
p
Q
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
IEC
JEDEC
EIAJ
mm
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
0.95
e
1.9
2.5
2.1
0.55
0.45
0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23
TO-236AB
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w
M
v
M
A
B
A
B
0
1
2 mm
scale
A
1.1
0.9
c
X
1
2
3
Plastic surface mounted package; 3 leads
SOT23
2004 Apr 15
12
Philips Semiconductors
Product specification
Double ESD protection diodes
in SOT23 package
PESDxS2UT series
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
LEVEL
DATA SHEET
STATUS
(1)
PRODUCT
STATUS
(2)(3)
DEFINITION
I
Objective data
Development
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
DEFINITIONS
Short-form specification
The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition
Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications
These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status `Production'), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no license or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
Koninklijke Philips Electronics N.V. 2004
SCA76
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Philips Semiconductors a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands
R76/03/pp
13
Date of release:
2004 Apr 15
Document order number:
9397 750 12823
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