Document Outline
- FEATURES
- APPLICATION
- DESCRIPTION
- PINNING
- ORDERING INFORMATION
- LIMITING VALUES
- ELECTRICAL CHARACTERISTICS
- THERMAL CHARACTERISTICS
- GRAPHICAL DATA
- PACKAGE OUTLINE
- DATA SHEET STATUS
- DEFINITIONS
- DISCLAIMERS
DATA SHEET
Product specification
2003 Nov 07
DISCRETE SEMICONDUCTORS
BAS716
Low-leakage diode
M3D319
2003 Nov 07
2
Philips Semiconductors
Product specification
Low-leakage diode
BAS716
FEATURES
Plastic SMD package
Low leakage current: typ. 0.2 nA
Switching time: typ. 0.6
s
Continuous reverse voltage: max. 75 V
Repetitive peak reverse voltage: max. 85 V
Repetitive peak forward current: max. 500 mA.
APPLICATION
Low leakage current applications in surface mounted
circuits.
DESCRIPTION
Epitaxial medium-speed switching diode with a low
leakage current in an ultra small SOD523 (SC-79) SMD
plastic package.
PINNING
PIN
DESCRIPTION
1
cathode
2
anode
handbook, halfpage
1
2
Top view
MAM408
Fig.1
Simplified outline (SOD523; SC-79) and
symbol.
Marking code: S1.
The marking bar indicates the cathode.
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a FR4 printed-circuit board.
TYPE NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
BAS716
-
plastic surface mounted package; 2 leads
SOD523
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
RRM
repetitive peak reverse voltage
-
85
V
V
R
continuous reverse voltage
-
75
V
I
F
continuous forward current
see Fig.2; note 1
-
200
mA
I
FRM
repetitive peak forward current
-
500
mA
I
FSM
non-repetitive peak forward current square wave; T
j
= 25
C prior to surge;
see Fig.4
t
p
= 1
s
-
4
A
t
p
= 1 ms
-
1
A
t
p
= 1 s
-
0.5
A
P
tot
total power dissipation
T
amb
= 25
C; note 1
-
250
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
2003 Nov 07
3
Philips Semiconductors
Product specification
Low-leakage diode
BAS716
ELECTRICAL CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
THERMAL CHARACTERISTICS
Notes
1. Device mounted on a FR4 printed-circuit board. Refer to SOD523 (SC-79) standard mounting conditions.
2. Soldering point of the cathode tab.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
F
forward voltage
I
F
= 1 mA
0.77
0.9
V
I
F
= 10 mA
0.85
1
V
I
F
= 50 mA
0.92
1.1
V
I
F
= 150 mA
1.02
1.25
V
I
R
reverse current
V
R
= 75 V
0.2
5
nA
V
R
= 75 V; T
j
= 150
C
3
80
nA
V
R
= 100 V
0.3
-
nA
C
d
diode capacitance
V
R
= 0 V; f = 1 MHz; see Fig.6
2
-
pF
t
rr
reverse recovery time
when switched from I
F
= 10 mA to
I
R
= 10 mA; R
L
= 100
; measured at
I
R
= 1 mA
0.6
3
s
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
450
K/W
R
th j-s
thermal resistance from junction to soldering point
note 2
120
K/W
2003 Nov 07
4
Philips Semiconductors
Product specification
Low-leakage diode
BAS716
GRAPHICAL DATA
handbook, halfpage
0
IF
(mA)
100
200
300
0
100
200
Tamb (
C)
MHC323
Device mounted on a FR4 printed-circuit board.
Fig.2
Maximum permissible continuous forward
current as a function of ambient
temperature.
handbook, halfpage
0
1.6
300
0
100
200
MLB752 - 1
0.8
1.2
0.4
I F
(mA)
V (V)
F
(1)
(2)
(3)
Fig.3
Forward current as a function of forward
voltage.
(1) T
j
= 150
C; typical values.
(2) T
j
= 25
C; typical values.
(3) T
j
= 25
C; maximum values.
handbook, full pagewidth
MBG704
10
tp (
s)
1
IFSM
(A)
10
2
10
-
1
10
4
10
2
10
3
10
1
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Based on square wave currents; T
j
= 25
C prior to surge.
2003 Nov 07
5
Philips Semiconductors
Product specification
Low-leakage diode
BAS716
handbook, halfpage
200
0
50
100
150
10
2
10
1
10
-
1
MDB826
IR
(nA)
Tj (
C)
(1)
(2)
Fig.5
Reverse current as a function of junction
temperature.
V
R
= 75 V.
(1) Maximum values.
(2) Typical values.
handbook, halfpage
0
5
10
20
2.0
1.5
0.5
0
1.0
15
MDB827
Cd
(pF)
VR (V)
Fig.6
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
j
= 25
C.
handbook, full pagewidth
t rr
(1)
I F
t
output signal
t r
t
t p
10%
90%
VR
input signal
V = V I x R
R
F
S
R = 50
S
IF
D.U.T.
R = 50
i
SAMPLING
OSCILLOSCOPE
MGA881
Fig.7 Reverse recovery voltage test circuit and waveforms.
(1) I
R
= 1 mA.
Input signal: reverse pulse rise time t
r
= 0.6 ns; reverse voltage pulse duration t
p
= 100 ns; duty factor
= 0.05;
Oscilloscope: rise time t
r
= 0.35 ns.
2003 Nov 07
6
Philips Semiconductors
Product specification
Low-leakage diode
BAS716
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
SOD523
SC-79
98-11-25
02-12-13
Plastic surface mounted package; 2 leads
SOD523
0
0.5
1 mm
scale
D
1
2
HE
E
bp
A
c
v
M
A
A
UNIT
bp
c
D
E
v
mm
A
HE
DIMENSIONS (mm are the original dimensions)
Note
1. The marking bar indicates the cathode.
(1)
0.34
0.26
0.17
0.11
0.1
0.85
0.75
1.25
1.15
0.65
0.58
1.65
1.55
2003 Nov 07
7
Philips Semiconductors
Product specification
Low-leakage diode
BAS716
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
LEVEL
DATA SHEET
STATUS
(1)
PRODUCT
STATUS
(2)(3)
DEFINITION
I
Objective data
Development
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
DEFINITIONS
Short-form specification
The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition
Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications
These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status `Production'), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
Koninklijke Philips Electronics N.V. 2003
SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Philips Semiconductors a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands
R76/01/pp
8
Date of release:
2003 Nov 07
Document order number:
9397 750 11999
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