PHP47NQ10T; PHB47NQ10T
N-channel enhancement mode field-effect transistor
Rev. 01 -- 16 May 2001
Product data
c
c
1.
Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOSTM
1
technology.
Product availability:
PHP47NQ10T in SOT78 (TO-220AB)
PHB47NQ10T in SOT404 (D
2
-PAK).
2.
Features
s
Fast switching
s
Very low on-state resistance.
3.
Applications
s
DC to DC converters
s
Switched mode power supplies.
4.
Pinning information
[1]
It is not possible to make connection to pin 2 of the SOT404 package.
1.
TrenchMOS is a trademark of Royal Philips Electronics.
Table 1:
Pinning - SOT78 and SOT404, simplified outline and symbol
Pin
Description
Simplified outline
Symbol
1
gate (g)
SOT78 (TO-220AB)
SOT404 (D
2
-PAK)
2
drain (d)
[1]
3
source (s)
mb
mounting base;
connected to
drain (d)
MBK106
1 2
mb
3
1
3
2
MBK116
mb
s
d
g
MBB076
Philips Semiconductors
PHP47NQ10T; PHB47NQ10T
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 -- 16 May 2001
2 of 14
9397 750 08243
Philips Electronics N.V. 2001. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol
Parameter
Conditions
Typ
Max
Unit
V
DS
drain-source voltage (DC)
T
j
= 25 to 175
C
-
100
V
I
D
drain current (DC)
T
mb
= 25
C; V
GS
= 10 V
-
47
A
P
tot
total power dissipation
T
mb
= 25
C
-
166
W
T
j
junction temperature
-
175
C
R
DSon
drain-source on-state resistance
T
j
= 25
C; V
GS
= 10 V; I
D
= 25 A
20
28
m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
V
DS
drain-source voltage (DC)
T
j
= 25 to 175
C
-
100
V
V
DGR
drain-gate voltage (DC)
T
j
= 25 to 175
C; R
GS
= 20 k
-
100
V
V
GS
gate-source voltage (DC)
-
20
V
I
D
drain current (DC)
T
mb
= 25
C; V
GS
= 10 V
Figure 2
and
3
-
47
A
T
mb
= 100
C; V
GS
= 10 V
Figure 2
-
33
A
I
DM
peak drain current
T
mb
= 25
C; pulsed; t
p
10
s;
Figure 3
-
187
A
P
tot
total power dissipation
T
mb
= 25
C;
Figure 1
-
166
W
T
stg
storage temperature
-
55
175
C
T
j
operating junction temperature
-
55
175
C
Source-drain diode
I
S
source (diode forward) current
(DC)
T
mb
= 25
C
-
47
A
I
SM
peak source (diode forward)
current
T
mb
= 25
C; pulsed; t
p
10
s
-
187
A
Avalanche ruggedness
E
AS
non-repetitive avalanche energy
unclamped inductive load;
I
AS
= 30 A; t
p
= 0.1 ms; V
DD
25 V;
R
GS
= 50
; V
GS
= 5 V; starting
T
j
= 25
C;
Figure 4
-
45
mJ
Philips Semiconductors
PHP47NQ10T; PHB47NQ10T
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 -- 16 May 2001
3 of 14
9397 750 08243
Philips Electronics N.V. 2001. All rights reserved.
V
GS
10 V
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature.
Fig 2.
Normalized continuous drain current as a
function of mounting base temperature.
T
mb
= 25
C; I
DM
is single pulse.
Unclamped inductive load; V
DD
25 V; R
GS
= 50
;
V
GS
= 5 V; starting T
j
= 25
C and 150
C.
Fig 3.
Safe operating area; continuous and peak drain
currents as a function of drain-source voltage.
Fig 4.
Non-repetitive avalanche ruggedness current
as a function of pulse duration.
03aa16
0
20
40
60
80
100
120
0
50
100
150
200
Tmb (
o
C)
Pder
(%)
03aa24
0
20
40
60
80
100
120
0
50
100
150
200
Tmb
(
o
C)
Ider
(%)
P
der
P
tot
P
tot 25 C
(
)
----------------------
100%
=
I
der
I
D
I
D 25 C
(
)
-------------------
100%
=
RDSon = VDS / ID
102
10
1
103
ID
(A)
1
10
102
103
VDS (V)
tp =
1
s
10
s
100
s
1 ms
10 ms
100ms
D.C.
003aaa097
tp (ms)
10
1
10-1
10-2
10-3
1
10
102
IAS
(A)
25 oC
Tj prior to avalanche = 150
o
C
003aaa098
Philips Semiconductors
PHP47NQ10T; PHB47NQ10T
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 -- 16 May 2001
4 of 14
9397 750 08243
Philips Electronics N.V. 2001. All rights reserved.
7.
Thermal characteristics
7.1 Transient thermal impedance
Table 4:
Thermal characteristics
Symbol
Parameter
Conditions
Value
Unit
R
th(j-mb)
thermal resistance from junction to mounting
base
Figure 5
0.9
K/W
R
th(j-a)
thermal resistance from junction to ambient
SOT78 package; vertical in still air.
60
K/W
R
th(j-a)
thermal resistance from junction to ambient
SOT404 package; mounted on
printed circuit board; minimum
footprint.
50
K/W
Fig 5.
Transient thermal impedance from junction to mounting base as a function of
pulse duration.
10
1
10-1
10-2
10-3
10-4
10-5
10-6
10-7
Zth (j-mb)
(K/W)
10-1
10-2
10-3
=
0.2
0.1
0.05
0.02
0.5
Single pulse
T
P
tp
t
T
tp
=
tp (s)
1
003aaa099
Philips Semiconductors
PHP47NQ10T; PHB47NQ10T
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 -- 16 May 2001
5 of 14
9397 750 08243
Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
T
j
= 25
C unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V
(BR)DSS
drain-source breakdown
voltage
I
D
= 250
A; V
GS
= 0 V
100
-
-
V
V
GS(th)
gate-source threshold voltage I
D
= 1 mA; V
DS
= V
GS
;
Figure 10
T
j
= 25
C
2
3
4
V
T
j
= 175
C
1
-
-
V
I
DSS
drain-source leakage current
V
GS
= 0 V; V
DS
= 100 V
T
j
= 25
C
-
0.05
10
A
T
j
= 175
C
-
-
500
A
I
GSS
gate-source leakage current
V
DS
= 0 V; V
GS
=
20 V
-
2
100
nA
R
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 25 A;
Figure 8
and
9
T
j
= 25
o
C
-
20
28
m
T
j
= 175
C
-
-
76
m
Dynamic characteristics
Q
g(tot)
total gate charge
I
D
= 40 A; V
DD
= 80 V;
V
GS
= 10 V;
Figure 15
-
66
-
nC
Q
gs
gate-source charge
-
12
-
nC
Q
gd
gate-drain (Miller) charge
-
21
-
nC
C
iss
input capacitance
V
GS
= 0 V; V
DS
= 25 V;
f = 1 MHz;
Figure 13
-
2320
3100
pF
C
oss
output capacitance
-
315
378
pF
C
rss
reverse transfer capacitance
-
187
256
pF
t
d(on)
turn-on delay time
V
DD
= 30 V; R
D
= 1.2
;
V
GS
= 10 V; R
G
= 10
-
15
23
ns
t
r
rise time
-
70
105
ns
t
d(off)
turn-off delay time
-
83
116
ns
t
f
fall time
-
45
63
ns
Source-drain diode
V
SD
source-drain (diode forward)
voltage
I
S
= 25 A; V
GS
= 0 V;
Figure 14
-
0.85
1.2
V
t
rr
reverse recovery time
I
S
= 47 A;
dI
S
/dt =
-
100 A/
s;
V
GS
= -10 V; V
R
= 30 V
-
66
-
ns
Q
r
recovered charge
-
0.24
-
C
Philips Semiconductors
PHP47NQ10T; PHB47NQ10T
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 -- 16 May 2001
6 of 14
9397 750 08243
Philips Electronics N.V. 2001. All rights reserved.
T
j
= 25
C
T
j
= 25
C and 175
C; V
DS
>
I
D
R
DSon
Fig 6.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 7.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
T
j
= 25
C
Fig 8.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 9.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
180
160
140
120
100
80
60
40
20
0
0
2
4
6
8
10
VGS = 10 V
20 V
4.5 V
5.0 V
5.5 V
6.0 V
6.5 V
7.0 V
7.5 V
8.0 V
003aaa100
ID
(A)
VDS (V)
o
Tj = 175
o
C
25
o
C
100
80
60
40
20
0
0
2
4
6
8
ID
(A)
VGS (V)
003aaa101
VGS = 5.5 V
6.0 V
6.5 V
7.0 V
7.5 V
10 V
8.0 V
60
55
50
45
40
35
30
25
20
15
5
25
45
65
85
105
125
ID (A)
(m
)
65
RDSon
003aaa102
-20
20
60
100
-60
140
180
Tj (
o
C)
1.0
2.0
0
a
1.2
1.4
1.6
1.8
0.8
0.6
0.4
0.2
003aaa103
a
R
DSon
R
DSon 25 C
(
)
----------------------------
=
Philips Semiconductors
PHP47NQ10T; PHB47NQ10T
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 -- 16 May 2001
7 of 14
9397 750 08243
Philips Electronics N.V. 2001. All rights reserved.
I
D
= 1 mA; V
DS
= V
GS
T
j
= 25
C
Fig 10. Gate-source threshold voltage as a function of
junction temperature.
Fig 11. Sub-threshold drain current as a function of
gate-source voltage.
T
j
= 25
C; V
DS
=
25 V
V
GS
= 0 V; f = 1 MHz
Fig 12. Forward transconductance as a function of
drain current; typical values.
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
2.5
-60
-20
20
1
0.5
0
1.5
2
60
100
140
180
3.5
V
GS(th)
(V)
T
j
(
o
C)
3
4
4.5
max
typ
min
003aaa023
2%
typ
98%
10-1
10-2
10-3
10-4
10-5
10-6
0
1
2
3
4
5
ID
(A)
VGS (V)
003aaa078
0
20
40
60
80
100
45
40
35
30
25
20
15
10
5
0
gfs
(S)
ID (A)
003aaa104
Ciss
Coss
Crss
5
4
3
2
1
0
Ciss,
Coss,
Crss
(nF)
1
10
102
10-2
10-1
VDS (V)
003aaa105
Philips Semiconductors
PHP47NQ10T; PHB47NQ10T
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 -- 16 May 2001
8 of 14
9397 750 08243
Philips Electronics N.V. 2001. All rights reserved.
T
j
= 25
C and 175
C; V
GS
= 0 V
I
D
= 40 A; V
DD
= 20 V and 80 V
Fig 14. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
Fig 15. Gate-source voltage as a function of gate
charge; typical values.
100
80
60
40
20
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
IS
(A)
VSD (V)
25
o
C
Tj = 175
o
C
003aaa106
0
2
4
6
8
10
0
10
20
30
40
50
60
70
(nC)
(V)
VGS
QG
VDD = 20 V
VDD = 80 V
003aaa107
Philips Semiconductors
PHP47NQ10T; PHB47NQ10T
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 -- 16 May 2001
9 of 14
9397 750 08243
Philips Electronics N.V. 2001. All rights reserved.
9.
Package outline
Fig 16. SOT78 (TO-220AB)
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT78
SC-46
3-lead TO-220AB
D
D1
q
p
L
1
2
3
L1
(1)
b1
e
e
b
0
5
10 mm
scale
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
DIMENSIONS (mm are the original dimensions)
A
E
A1
c
Note
1. Terminals in this zone are not tinned.
Q
L2
UNIT
A1
b1
D1
e
p
mm
2.54
q
Q
A
b
D
c
L2
max.
3.0
3.8
3.6
15.0
13.5
3.30
2.79
3.0
2.7
2.6
2.2
0.7
0.4
15.8
15.2
0.9
0.7
1.3
1.0
4.5
4.1
1.39
1.27
6.4
5.9
10.3
9.7
L1
(1)
E
L
00-09-07
01-02-16
mounting
base
Philips Semiconductors
PHP47NQ10T; PHB47NQ10T
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 -- 16 May 2001
10 of 14
9397 750 08243
Philips Electronics N.V. 2001. All rights reserved.
Fig 17. SOT404 (D
2
-PAK).
UNIT
A
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
A1
D1
D
max.
E
e
Lp
HD
Q
c
2.54
2.60
2.20
15.80
14.80
2.90
2.10
11
1.60
1.20
10.30
9.70
4.50
4.10
1.40
1.27
0.85
0.60
0.64
0.46
b
DIMENSIONS (mm are the original dimensions)
SOT404
0
2.5
5 mm
scale
Plastic single-ended surface mounted package (Philips version of D
2
-PAK); 3 leads
(one lead cropped)
SOT404
e
e
E
b
D1
HD
D
Q
Lp
c
A1
A
1
3
2
mounting
base
99-06-25
01-02-12
Philips Semiconductors
PHP47NQ10T; PHB47NQ10T
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 -- 16 May 2001
11 of 14
9397 750 08243
Philips Electronics N.V. 2001. All rights reserved.
10. Revision history
Table 6:
Revision history
Rev Date
CPCN
Description
01
20010516
-
Product data. Initial version.
Philips Semiconductors
PHP47NQ10T; PHB47NQ10T
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 -- 16 May 2001
12 of 14
9397 750 08243
Philips Electronics N.V. 2001 All rights reserved.
11. Data sheet status
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
12. Definitions
Short-form specification -- The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition -- Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information -- Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
13. Disclaimers
Life support -- These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes -- Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design
and/or
performance.
Philips
Semiconductors
assumes
no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products
are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
Data sheet status
[1]
Product status
[2]
Definition
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips Semiconductors
reserves the right to change the specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published at a
later date. Philips Semiconductors reserves the right to change the specification without notice, in order to
improve the design and supply the best possible product.
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the right to
make changes at any time in order to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change Notification (CPCN) procedure
SNW-SQ-650A.
Philips Semiconductors
PHP47NQ10T; PHB47NQ10T
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 -- 16 May 2001
13 of 14
9397 750 08243
Philips Electronics N.V. 2001. All rights reserved.
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Internet: http://www.semiconductors.philips.com
(SCA72)
Philips Electronics N.V. 2001.
Printed in The Netherlands
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Date of release: 16 May 2001
Document order number: 9397 750 08243
Contents
Philips Semiconductors
PHP47NQ10T; PHB47NQ10T
N-channel enhancement mode field-effect transistor
1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
3
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
4
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
5
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
6
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
7
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
7.1
Transient thermal impedance . . . . . . . . . . . . . . 4
8
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11
11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12
12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
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