PHP45N03LT; PHB45N03LT;
PHD45N03LT
N-channel TrenchMOS transistor
Rev. 06 -- 05 October 2000
Product specification
c
c
1.
Description
N-channel logic level field-effect power transistor in a plastic package using
TrenchMOSTM
1
technology.
Product availability:
PHP45N03LT in SOT78 (TO-220AB)
PHB45N03LT in SOT404 (D
2
-PAK)
PHD45N03LT in SOT428 (D-PAK).
2.
Features
s
Low on-state resistance
s
Fast switching.
3.
Applications
s
Computer motherboard DC to DC converters
s
Switched mode power supplies.
4.
Pinning information
[1]
It is not possible to make connection to pin 2 of the SOT404 or SOT428 packages.
1.
TrenchMOS is a trademark of Royal Philips Electronics.
Table 1:
Pinning - SOT78, SOT404, SOT428 simplified outline and symbol
Pin
Description
Simplified outline
Symbol
1
gate (g)
SOT78 (TO-220AB)
SOT404 (D
2
-PAK)
SOT428 (D-PAK)
2
drain (d)
[1]
3
source (s)
mb
mounting base,
connected to
drain (d)
MBK106
1 2
mb
3
1
3
2
MBK116
mb
MBK091
Top view
1
3
mb
2
s
d
g
MBB076
Philips Semiconductors
PHP45N03LT series
N-channel TrenchMOS transistor
Product specification
Rev. 06 -- 05 October 2000
2 of 15
9397 750 07579
Philips Electronics N.V. 2000. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
V
DS
drain-source voltage (DC)
T
j
= 25 to 175
C
-
25
V
I
D
drain current (DC)
T
mb
= 25
C; V
GS
= 5 V
-
45
A
P
tot
total power dissipation
T
mb
= 25
C
-
86
W
T
j
junction temperature
-
175
C
R
DSon
drain-source on-state resistance
V
GS
= 10 V; I
D
= 25 A
16
21
m
V
GS
= 5 V; I
D
= 25 A
20
24
m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
V
DS
drain-source voltage (DC)
T
j
= 25 to 175
C
-
25
V
V
DGR
drain-gate voltage (DC)
T
j
= 25 to 175
C; R
GS
= 20 k
-
25
V
V
GS
gate-source voltage (DC)
-
15
V
I
D
drain current (DC)
T
mb
= 25
C; V
GS
= 5 V;
Figure 2
and
3
-
45
A
T
mb
= 100
C; V
GS
= 5 V;
Figure 2
-
30
A
I
DM
peak drain current
T
mb
= 25
C; pulsed; t
p
10
s;
Figure 3
-
180
A
P
tot
total power dissipation
T
mb
= 25
C;
Figure 1
-
86
W
T
stg
storage temperature
-
55
+175
C
T
j
operating junction temperature
-
55
+175
C
Source-drain diode
I
S
source (diode forward) current (DC)
T
mb
= 25
C
-
45
A
I
SM
peak source (diode forward) current
T
mb
= 25
C; pulsed; t
p
10
s
-
180
A
Philips Semiconductors
PHP45N03LT series
N-channel TrenchMOS transistor
Product specification
Rev. 06 -- 05 October 2000
3 of 15
9397 750 07579
Philips Electronics N.V. 2000. All rights reserved.
V
GS
5 V
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature.
Fig 2.
Normalized continuous drain current as a
function of mounting base temperature.
T
mb
= 25
C; I
DM
is single pulse.
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
Tmb (
o
C)
P
der
120
110
100
90
80
70
60
50
40
30
20
10
0
0
20
40
60
80
100
120 140 160
180
03ac97
(%)
0
20
40
60
80
100 120 140 160 180
Tmb (
o
C)
I
der
120
110
100
90
80
70
60
50
40
30
20
10
0
(%)
03ac98
P
der
P
tot
P
tot 25 C
(
)
----------------------
100%
=
I
der
I
D
I
D 25 C
(
)
-------------------
100%
=
03ac96
10
102
103
1
10
102
VDS (V)
ID
tp = 10 us
(A)
tp
tp
T
P
t
T
=
RDSon = VDS / ID
DC
tp = 10
s
100
s
1 ms
10 ms
100 ms
1
Philips Semiconductors
PHP45N03LT series
N-channel TrenchMOS transistor
Product specification
Rev. 06 -- 05 October 2000
4 of 15
9397 750 07579
Philips Electronics N.V. 2000. All rights reserved.
7.
Thermal characteristics
7.1 Transient thermal impedance
Table 4:
Thermal characteristics
Symbol
Parameter
Conditions
Value
Unit
R
th(j-mb)
thermal resistance from junction to mounting base
Figure 4
1.75
K/W
R
th(j-a)
thermal resistance from junction to ambient
vertical in still air; SOT78 package
60
K/W
mounted on a printed circuit board;
minimum footprint; SOT404 and
SOT428 packages
50
K/W
Fig 4.
Transient thermal impedance from junction to mounting base as a function of
pulse duration.
10-2
1
10
tp (s)
Zth(j-mb)
10-1
= 0.5
0.2
0.02
(K/W)
0.05
0.1
03ac99
Single Pulse
tp
tp
T
P
t
T
=
10
10-1
10-3
10-5
10-6
10-4
10-2
1
Philips Semiconductors
PHP45N03LT series
N-channel TrenchMOS transistor
Product specification
Rev. 06 -- 05 October 2000
5 of 15
9397 750 07579
Philips Electronics N.V. 2000. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
T
j
= 25
C unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V
(BR)DSS
drain-source breakdown
voltage
I
D
= 0.25 mA; V
GS
= 0 V
T
j
= 25
C
25
-
-
V
T
j
=
-
55
C
22
-
-
V
V
GS(th)
gate-source threshold voltage I
D
= 1 mA; V
DS
= V
GS
;
Figure 9
T
j
= 25
C
1
1.5
2
V
T
j
= 175
C
0.5
-
-
V
T
j
=
-
55
C
-
-
2.3
V
I
DSS
drain-source leakage current
V
DS
= 25 V; V
GS
= 0 V
T
j
= 25
C
-
0.05
10
A
T
j
= 175
C
-
-
500
A
I
GSS
gate-source leakage current
V
GS
=
5 V; V
DS
= 0 V
-
10
100
nA
R
DSon
drain-source on-state
resistance
V
GS
= 5 V; I
D
= 25 A;
Figure 7
and
8
T
j
= 25
C
-
20
24
m
T
j
= 175
C
-
-
45
m
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25
C
-
-
21
m
Dynamic characteristics
g
fs
forward transconductance
V
DS
= 25 V; I
D
= 25 A
Figure 11
8
16
-
S
Q
g(tot)
total gate charge
I
D
= 45 A; V
DD
= 15 V;
V
GS
= 10 V;
Figure 14
-
35
-
nC
Q
gs
gate-source charge
-
5
-
nC
Q
gd
gate-drain (Miller) charge
-
13
-
nC
C
iss
input capacitance
V
GS
= 0 V; V
DS
= 25 V;
f = 1 MHz;
Figure 12
-
920
1100
pF
C
oss
output capacitance
-
260
310
pF
C
rss
reverse transfer capacitance
-
180
220
pF
t
d(on)
turn-on delay time
V
DD
= 15 V; I
D
= 25 A;
V
GS
= 5 V; R
G
= 5
;
resistive load
-
6
7
ns
t
r
turn-on rise time
-
40
48
ns
t
d(off)
turn-off delay time
-
78
84
ns
t
f
turn-off fall time
-
46
52
ns
Source-drain diode
V
SD
source-drain (diode forward)
voltage
I
S
= 25 A; V
GS
= 0 V;
Figure 13
-
0.95
1.2
V
I
S
= 40 A; V
GS
= 0 V
-
1.0
-
V
t
rr
reverse recovery time
I
S
= 40 A;
dI
S
/dt =
-
100 A/
s;
V
GS
= 0 V; V
DS
= 25 V
-
52
-
ns
Q
r
recovered charge
-
0.08
-
C
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