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Электронный компонент: PHE13005

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Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
PHE13005
GENERAL DESCRIPTION
The PHE13005 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high
frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems,
etc.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE
= 0V
-
700
V
V
CBO
Collector-Base voltage (open emitter)
-
700
V
V
CEO
Collector-emitter voltage (open base)
-
400
V
V
EBO
Emitter-Base voltage (I
B
= 0)
-
9
V
I
C
Collector current (DC)
-
4
A
I
CM
Collector current peak value
-
8
A
P
tot
Total power dissipation
T
mb
25C
-
75
W
V
CEsat
Collector-emitter saturation voltage
I
C
= 2A; I
B
= 0.5A
0.2
0.6
V
t
f
Fall time
I
C
= 2A; I
B1
= 0.4A; V
BE(OFF)
= 5V
0.1
0.5
s
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
tab
collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
Collector to emitter voltage
V
BE
= 0V
-
700
V
V
CEO
Collector to emitter voltage (open base)
-
400
V
V
CBO
Collector to base voltage (open emitter)
-
700
V
V
EBO
Emitter-Base voltage (I
B
= 0)
-
9
V
I
C
Collector current (DC)
-
4
A
I
CM
Collector current peak value
-
8
A
I
B
Base current (DC)
-
2
A
I
BM
Base current peak value
-
4
A
P
tot
Total power dissipation
T
mb
25C
-
75
W
T
stg
Storage temperature
-65
150
C
T
j
Junction temperature
-
150
C
THERMAL RESISTANCES8
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-mb
Junction to mounting base
-
1.67
K/W
R
th j-a
Junction to ambient
in free air
60
-
K/W
1 2 3
tab
b
c
e
February 1999
1
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
PHE13005
STATIC CHARACTERISTICS
T
mb
= 25C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CEV
Collector cut-off current
1
V
BE(off)
= -1.5V; V
CE
= V
CESMmax
-
-
1.0
mA
I
CEV
V
BE(off)
= -1.5V; V
CE
= V
CESMmax
;
-
-
5.0
mA
T
j
= 100C
I
EBO
Emitter cut-off current
V
EB
= 9V; I
C
= 0A
-
-
1
mA
V
CEOsust
Collector-emitter sustaining voltage
I
B
= 0A; I
C
= 10mA
400
-
-
V
V
CEsat
Collector-emitter saturation voltage
I
C
= 1.0A; I
B
= 0.2A
-
0.1
0.5
V
V
CEsat
I
C
= 2.0A; I
B
= 0.5A
-
0.2
0.6
V
V
CEsat
I
C
= 4.0A; I
B
= 1.0A
-
0.3
1.0
V
V
BEsat
Base-emitter saturation voltage
I
C
= 1.0A; I
B
= 0.2A
-
0.85
1.2
V
V
BEsat
I
C
= 2.0A; I
B
= 0.5A
-
0.92
1.6
V
h
FE
DC current gain
I
C
= 1.0A; V
CE
= 5V
10
20
60
h
FEsat
I
C
= 2.0A; V
CE
= 5V
8
17
40
DYNAMIC CHARACTERISTICS
T
mb
= 25C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Switching times (resistive load)
I
Con
= 2.0A; I
Bon
= -I
Boff
= 0.4A;
R
L
= 75
; V
CC
= 250V
t
s
Turn-off storage time
2.7
4
s
t
f
Turn-off fall time
0.3
0.9
s
Switching times (inductive load)
I
Con
= 2.0A; I
Bon
= 0.4A; L
B
= 1
H;
-V
BE(off)
= 5V
t
s
Turn-off storage time
1.2
2
s
t
f
Turn-off fall time
0.1
0.5
s
Switching times (inductive load)
I
Con
= 2.0A; I
Bon
= 0.4A; L
B
= 1
H;
-V
BE(off)
= 5V; T
j
= 100C
t
s
Turn-off storage time
1.4
4
s
t
f
Turn-off fall time
0.16
0.9
s
1 Measured with half sine-wave voltage (curve tracer).
February 1999
2
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
PHE13005
Fig.1. Test circuit for V
CEOsust
.
Fig.2. Oscilloscope display for V
CEOsust
.
Fig.3. Test circuit resistive load. V
IM
= -6 to +8 V
V
CC
= 250 V; t
p
= 20
s;
= t
p
/ T = 0.01.
R
B
and R
L
calculated from I
Con
and I
Bon
requirements.
Fig.4. Switching times waveforms with resistive load.
Fig.5. Test circuit inductive load.
V
CC
= 300 V; -V
BE
= 5 V, L
C
= 200 uH; L
B
= 1 uH
Fig.6. Switching times waveforms with inductive load.
+ 50v
100-200R
Horizontal
Vertical
Oscilloscope
1R
6V
30-60 Hz
300R
IC
IB
10 %
10 %
90 %
90 %
ton
toff
ts
tf
IBon
-IBoff
ICon
tr
30ns
VCE / V
min
VCEOsust
IC / mA
10
100
250
0
LB
IBon
-VBB
LC
T.U.T.
VCC
tp
T
VCC
R
R
T.U.T.
0
VIM
B
L
IC
IB
ICon
IBon
-IBoff
t
t
ts
tf
toff
10 %
90 %
February 1999
3
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
PHE13005
Fig.7. Normalised power dissipation.
PD% = 100
PD/PD
25C
= f (T
mb
)
Fig.8. Typical DC current gain. h
FE
= f(I
C
)
parameter V
CE
Fig.9. Collector-Emitter saturation voltage.
Solid lines = typ values, VCEsat = f(IB); Tj=25C
Fig.10. Base-Emitter saturation voltage.
Solid lines = typ values, V
BEsat
= f(IC); at IC/IB =4.
Fig.11. Collector-Emitter saturation voltage.
Solid lines = typ values, V
CEsat
= f(IC); at IC/IB =4.
Fig.12. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
0
20
40
60
80
100
120
140
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1
10
IC/A
VBEsat/V
0.01
1
100
10
1
0.1
10
h
FE
IC / A
Tj = 25 C
1V
5V
0.0
0.1
0.2
0.3
0.4
0.5
0.1
1
10
IC/A
VCEsat/V
0.0
0.4
0.8
1.2
1.6
2.0
0.01
0.10
1.00
10.00
IB/A
VCEsat/V
IC=1A
2A
3A
4A
1E-06
1E-04
1E-02
1E+00
t / s
Zth / (K/W)
10
1
0.1
0.01
0
0.5
0.2
0.1
0.05
0.02
D =
t p
T
T
P
t
D
t
p
D=
February 1999
4
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
PHE13005
Fig.13. Test Circuit for reverse
bias safe operating
area.
V
cl
1000V; V
cc
= 150V; V
BE
= -5V; L
B
= 1
H; L
c
=
200
H
Fig.14. Reverse
bias safe operating area T
j
T
jmax
Fig.15. Forward bias safe operating area. T
hs
25 C
(1)
P
tot
max and P
tot
peak max lines.
(2)
Second breakdown limits.
I
Region of permissible DC operation.
II
Extension for repetitive pulse operation.
III
Extension during turn-on in single
transistor converters provided that
R
BE
100
and t
p
0.6
s.
NB:
Mounted with heatsink compound and
30
5 newton force on the centre of the
envelope.
LB
IBon
-VBB
LC
T.U.T.
VCC
VCL
1
10
100
1,000
0.001
0.01
0.1
1
10
100
VCEclamp (V)
IC (A)
Icm max
Ic max
I
II
III
(1)
(2)
Duty Cycle = 0.01
tp =
20us
50us
100us
200us
500us
DC
0
100
200
300
400
500
600
700
800
900
0
1
2
3
4
5
6
7
8
9
VCEclamp (V)
IC (A)
VBE=-5V
February 1999
5
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
PHE13005
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.16. TO220AB; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10,3
max
3,7
2,8
3,0
3,0 max
not tinned
1,3
max
(2x)
1 2 3
2,4
0,6
4,5
max
5,9
min
15,8
max
1,3
2,54 2,54
0,9 max (3x)
13,5
min
February 1999
6
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
PHE13005
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
February 1999
7
Rev 1.000