Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2722AF
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in
horizontal deflection circuits of high resolution monitors. Designed to withstand V
CES
pulses up to 1700 V.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE
= 0 V
-
1700
V
V
CEO
Collector-emitter voltage (open base)
-
825
V
I
C
Collector current (DC)
-
10
A
I
CM
Collector current peak value
-
25
A
P
tot
Total power dissipation
T
hs
25 C
-
45
W
V
CEsat
Collector-emitter saturation voltage
I
C
= 4.5 A; I
B
= 1.0 A
-
1.0
V
I
Csat
Collector saturation current
f = 64 kHz
4.5
-
A
t
s
Storage time
I
Csat
= 4.5 A; f = 64 kHz
2.9
3.5
s
PINNING - SOT199
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE
= 0 V
-
1700
V
V
CEO
Collector-emitter voltage (open base)
-
825
V
I
C
Collector current (DC)
-
10
A
I
CM
Collector current peak value
-
25
A
I
B
Base current (DC)
-
10
A
I
BM
Base current peak value
-
14
A
-I
B(AV)
Reverse base current
average over any 20 ms period
-
150
mA
-I
BM
Reverse base current peak value
1
-
6
A
P
tot
Total power dissipation
T
hs
25 C
-
45
W
T
stg
Storage temperature
-65
150
C
T
j
Junction temperature
-
150
C
ESD LIMITING VALUES
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge capacitor voltage Human body model (250 pF,
-
10
kV
1.5 k
)
1
2
3
case
b
c
e
1 Turn-off current.
September 1997
1
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2722AF
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-hs
Junction to heatsink
without heatsink compound
-
3.7
K/W
R
th j-hs
Junction to heatsink
with heatsink compound
-
2.8
K/W
R
th j-a
Junction to ambient
in free air
35
-
K/W
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
isol
Repetitive peak voltage from all
R.H.
65 % ; clean and dustfree
-
2500
V
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
-
22
-
pF
heatsink
STATIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES
Collector cut-off current
2
V
BE
= 0 V; V
CE
= V
CESMmax
-
-
1.0
mA
I
CES
V
BE
= 0 V; V
CE
= V
CESMmax
;
-
-
2.0
mA
T
j
= 125 C
I
EBO
Emitter cut-off current
V
EB
= 7.5 V; I
C
= 0 A
-
-
1.0
mA
BV
EBO
Emitter-base breakdown voltage
I
B
= 1 mA
7.5
13.5
-
V
V
CEOsust
Collector-emitter sustaining voltage
I
B
= 0 A; I
C
= 100 mA;
825
900
-
V
L = 25 mH
Collector-emitter saturation voltage
I
C
= 4.5 A; I
B
= 1.0 A
-
-
1.0
V
V
CEsat
Base-emitter saturation voltage
I
C
= 4.5 A; I
B
= 1.0 A
-
-
1.0
V
V
BEsat
h
FE
DC current gain
I
C
= 100 mA; V
CE
= 5 V
-
22
-
h
FE
I
C
= 4.5 A; V
CE
= 1 V
4.5
7
10
DYNAMIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Switching times (64 kHz line
I
Csat
= 4.5 A; L
C
= 300
H;
deflection circuit)
C
fb
= 2.5 nF; V
CC
= 160 V;
I
B(end)
= 1.0 A; L
B
= 2.0
H; -V
BB
= 4 V;
-I
BM
= 2.7 A
t
s
Turn-off storage time
2.9
3.5
s
t
f
Turn-off fall time
0.19
0.25
s
2 Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2722AF
Fig.1. Test circuit for V
CEOsust
.
Fig.2. Oscilloscope display for V
CEOsust
.
Fig.3. Switching times waveforms (64 kHz).
Fig.4. Switching times definitions.
Fig.5. Switching times test circuit.
Fig.6. DC current gain. h
FE
= f (I
C
)
Parameter T
hs
(Low and high gain)
+ 50v
100-200R
Horizontal
Vertical
Oscilloscope
1R
6V
30-60 Hz
100R
ICsat
90 %
10 %
tf
ts
IBend
IC
IB
t
t
- IBM
VCE / V
min
VCEOsust
IC / mA
100
200
250
0
+ 150 v nominal
adjust for ICsat
Lc
Cfb
T.U.T.
LB
IBend
-VBB
V
ICsat
I end
16 us
6.5 us
5 us
t
t
t
TRANSISTOR
DIODE
B
I C
I B
CE
BU2720/22AF
0.01
0.1
1
10
100
1
10
100
Ths = 25 C
Ths = 85 C
VCE = 5 V
hFE
IC / A
September 1997
3
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2722AF
Fig.7. DC current gain. h
FE
= f (I
C
)
Parameter T
hs
(Low and high gain)
Fig.8. Typical collector-emitter saturation voltage.
V
CEsat
= f (I
C
); parameter I
C
/I
B
Fig.9. Typical base-emitter saturation voltage.
V
BEsat
= f (I
B
); parameter I
C
Fig.10. Normalised power dissipation.
PD% = 100
PD/PD 25C = f (T
hs
)
Fig.11. Transient thermal impedance.
Z
th
j-hs
= f(t); parameter D = t
p
/T
Fig.12. Typical storage and fall time.
t
s
= f(I
B
); t
f
= f(I
B
); I
C
= 4.5 A; f = 64 kHz; T
hs
= 85 C
0.01
0.1
1
10
100
1
10
100
Ths = 25 C
Ths = 85 C
VCE = 1 V
hFE
BU2720/22AF
IC / A
0
20
40
60
80
100
120
140
Ths / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
BU2722AF
0.01
0.1
1
10
0.1
1
10
100
Tj = 85 C
Tj = 25 C
IC/IB = 8
IC/IB = 4
VCEsat / V
IC / A
1E-06
1E-04
1E-02
1E+00
t / s
Zth / (K/W)
D = 0
0.02
0.05
0.1
0.2
0.5
D =
t
p
t
p
T
T
P
t
D
10
1
0.1
0.01
0.001
BU2722AF
0
0.5
1
1.5
2
0.6
0.7
0.8
0.9
1
Tj = 25 C
Tj = 85 C
IC = 5.5 A
4.5 A
VBEsat / V
IB / A
0
1
2
3
4
0.1
1
10
IB / A
ts, tf / us
BU2722AF
September 1997
4
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2722AF
Fig.13. Typical power dissipation.
P
tot
= f(I
B
); I
C
= 4.5 A; f = 64 kHz; Parameter T
hs
Fig.14. Test Circuit RBSOA. V
CC
= 150 V;
-V
BB
= 1 - 4 V;
L
C
= 1 mH; V
CL
= 1500 V; L
B
= 1 - 3
H;
C
FB
= 1 - 4 nF; I
B(end)
= 0.8 - 4 A
Fig.15. Reverse bias safe operating area. T
j
T
jmax
0
1
2
3
4
1
10
100
BU2722AF
Ptot / W
IB / A
Ths = 85 C
Ths = 25 C
1000
0
2
4
6
8
10
12
14
16
18
20
22
24
26
VCE / V
IC / A
1700
BU2720AF/DF
Area where
fails occur
100
LB
IBend
-VBB
LC
T.U.T.
VCC
VCL
CFB
September 1997
5
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2722AF
MECHANICAL DATA
Dimensions in mm
Net Mass: 5.5 g
Fig.16. SOT199; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
6.2
5.8
3.5
21.5
max
15.7
min
1
2
3
2.1 max
1.2
1.0
0.4
2.0
0.7 max
45
o
3.2
5.2 max
3.1
3.3
7.3
15.3 max
0.7
5.45
seating
plane
5.45
3.5 max
not tinned
M
September 1997
6
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2722AF
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1997
7
Rev 1.200
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