ChipFind - документация

Электронный компонент: PHN205

Скачать:  PDF   ZIP

Document Outline

DATA SHEET
Product specification
Supersedes data of 1997 Jun 18
File under Discrete Semiconductors, SC13b
1997 Oct 22
DISCRETE SEMICONDUCTORS
PHN205
Dual N-channel enhancement
mode
MOS transistor
1997 Oct 22
2
Philips Semiconductors
Product specification
Dual N-channel enhancement mode
MOS transistor
PHN205
FEATURES
High-speed switching
No secondary breakdown
Very low on-state resistance.
APPLICATIONS
Motor and actuator driver
Power management
Synchronized rectification.
DESCRIPTION
Two N-channel enhancement mode MOS transistors in an
8-pin plastic SOT96-1 (SO8) package.
CAUTION
The device is supplied in an antistatic package.
The gate-source input must be protected against static
discharge during transport or handling.
PINNING - SOT96-1 (SO8)
PIN
SYMBOL
DESCRIPTION
1
s
1
source 1
2
g
1
gate 1
3
s
2
source 2
4
g
2
gate 2
5
d
2
drain 2
6
d
2
drain 2
7
d
1
drain 1
8
d
1
drain 1
Fig.1 Simplified outline and symbol.
handbook, halfpage
d
MAM117
1
4
5
8
g
s
d
1
1
1
1
d
g
s
d
2
2
2
2
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per N-channel
V
DS
drain-source voltage (DC)
-
30
V
V
SD
source-drain diode forward voltage
I
S
= 1.25 A
-
1
V
V
GS
gate-source voltage (DC)
-
20
V
V
GSth
gate-source threshold voltage
I
D
= 1 mA; V
DS
= V
GS
1
2.8
V
I
D
drain current (DC)
T
s
= 80
C
-
6.4
A
R
DSon
drain-source on-state resistance
I
D
= 3.2 A; V
GS
= 10 V
-
50
m
P
tot
total power dissipation
T
s
= 80
C
-
3.5
W
1997 Oct 22
3
Philips Semiconductors
Product specification
Dual N-channel enhancement mode
MOS transistor
PHN205
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1. T
s
is the temperature at the soldering point of the drain lead.
2. Pulse width and duty cycle limited by maximum junction temperature.
3. Maximum permissible dissipation per MOS transistor. Both devices may be loaded up to 3.5 W at the same time.
4. Maximum permissible dissipation per MOS transistor. Device mounted on printed-circuit board with an R
th a-tp
(ambient to tie-point) of 27.5 K/W.
5. Maximum permissible dissipation per MOS transistor. Device mounted on printed-circuit board with an R
th a-tp
(ambient to tie-point) of 90 K/W.
6. Maximum permissible dissipation if only one MOS transistor dissipates. Device mounted on printed-circuit board with
an R
th a-tp
(ambient to tie-point) of 90 K/W.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per N-channel
V
DS
drain-source voltage (DC)
-
30
V
V
GS
gate-source voltage (DC)
-
20
V
I
D
drain current (DC)
T
s
= 80
C; note 1
-
6.4
A
I
DM
peak drain current
note 2
-
25
A
P
tot
total power dissipation
T
s
= 80
C; note 3
-
3.5
W
T
amb
= 25
C; note 4
-
2.6
W
T
amb
= 25
C; note 5
-
1.1
W
T
amb
= 25
C; note 6
-
1.5
W
T
stg
storage temperature
-
65
+150
C
T
j
operating junction temperature
-
65
+150
C
Source-drain diode
I
S
source current (DC)
T
s
= 80
C
-
3.5
A
I
SM
peak pulsed source current
note 2
-
14
A
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point
20
K/W
1997 Oct 22
4
Philips Semiconductors
Product specification
Dual N-channel enhancement mode
MOS transistor
PHN205
Fig.2 Power derating curve.
handbook, halfpage
0
50
100
150
MGG340
8
6
2
0
4
Ptot
(W)
Ts (
C)
= 0.01; T
s
= 80
C.
(1) R
DSon
limitation.
Fig.3 SOAR.
handbook, halfpage
10
2
1
10
10
-
1
MGG341
10
-
1
1
10
10
2
VDS (V)
ID
(A)
10
s
1 ms
DC
100 ms
10 ms
100
s
(1)
tp =
tp
tp
T
P
t
T
=
1997 Oct 22
5
Philips Semiconductors
Product specification
Dual N-channel enhancement mode
MOS transistor
PHN205
CHARACTERISTICS
T
j
= 25
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per N-channel
V
(BR)DSS
drain-source breakdown voltage
V
GS
= 0; I
D
= 10
A
30
-
-
V
V
GSth
gate-source threshold voltage
V
GS
= V
DS
; I
D
= 1 mA
1
-
2.8
V
I
DSS
drain-source leakage current
V
GS
= 0; V
DS
= 24 V
-
-
100
nA
I
GSS
gate leakage current
V
GS
=
20 V; V
DS
= 0
-
-
100
nA
R
DSon
drain-source on-state resistance
V
GS
= 4.5 V; I
D
= 1.6 A
-
-
0.1
V
GS
= 10 V; I
D
= 3.2 A
-
-
0.05
C
iss
input capacitance
V
GS
= 0; V
DS
= 24 V; f = 1 MHz
-
450
-
pF
C
oss
output capacitance
V
GS
= 0; V
DS
= 24 V; f = 1 MHz
-
200
-
pF
C
rss
reverse transfer capacitance
V
GS
= 0; V
DS
= 24 V; f = 1 MHz
-
100
-
pF
Q
G
total gate charge
V
GS
= 10 V; V
DD
= 15 V; I
D
= 3.2 A
-
15
-
nC
Q
GS
gate-source charge
V
GS
= 10 V; V
DD
= 15 V; I
D
= 3.2 A
-
1
-
nC
Q
GD
gate-drain charge
V
GS
= 10 V; V
DD
= 15 V; I
D
= 3.2 A
-
5
-
nC
t
d(on)
turn-on delay time
V
GS
= 0 to 10 V; V
DD
= 15 V;
I
D
= 1 A; R
gen
= 6
; see Fig.4
-
7
-
ns
t
f
fall time
V
GS
= 0 to 10 V; V
DD
= 15 V;
I
D
= 1 A; R
gen
= 6
; see Fig.4
-
8
-
ns
t
on
turn-on switching time
V
GS
= 0 to 10 V; V
DD
= 15 V;
I
D
= 1 A; R
gen
= 6
; see Fig.4
-
15
-
ns
t
d(off)
turn-off delay time
V
GS
= 10 to 0 V; V
DD
= 15 V;
I
D
= 1 A; R
gen
= 6
; see Fig.4
-
20
-
ns
t
r
rise time
V
GS
= 10 to 0 V; V
DD
= 15 V;
I
D
= 1 A; R
gen
= 6
; see Fig.4
-
12
-
ns
t
off
turn-off switching time
V
GS
= 10 to 0 V; V
DD
= 15 V;
I
D
= 1 A; R
gen
= 6
; see Fig.4
-
32
-
ns
Source-drain diode
V
SD
source-drain diode forward
voltage
V
GD
= 0; I
S
= 1.25 A
-
-
1
V
t
rr
reverse recovery time
I
S
= 1.25 A; di/dt =
-
100 A/
s
-
45
-
ns
1997 Oct 22
6
Philips Semiconductors
Product specification
Dual N-channel enhancement mode
MOS transistor
PHN205
Fig.4 Switching time test circuit; input and output waveforms.
handbook, full pagewidth
MAM274
90 %
10 %
10 %
90 %
Vin
Vout
td(on)
ton
toff
tf
tr
td(off)
0
0
VDD
RL
Vout
Vin
Fig.5 Transient thermal resistance from junction to soldering point as a function of pulse time; typical values.
handbook, full pagewidth
10
2
10
1
10
-
1
10
-
6
10
-
5
10
-
4
10
-
3
10
-
2
10
-
1
1
MGG342
Rth js
(K/W)
tp (s)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
tp
tp
T
P
t
T
=
(1)
= 0.75.
(2)
= 0.5.
(3)
= 0.33.
(4)
= 0.2.
(5)
= 0.1.
(6)
= 0.05.
(7)
= 0.02.
(8)
= 0.01.
(9)
= 0.
1997 Oct 22
7
Philips Semiconductors
Product specification
Dual N-channel enhancement mode
MOS transistor
PHN205
Fig.6
Capacitance as a function of drain-source
voltage; typical values.
V
GS
= 0; f = 1 MHz; T
j
= 25
C.
(1) C
iss
.
(2) C
oss
.
(3) C
rss
.
handbook, halfpage
0
4
8
12
16
20
1250
0
1000
750
500
250
MGG343
C
(pF)
VDS (V)
(1)
(2)
(3)
Fig.7 Output characteristics; typical values.
handbook, halfpage
0
4
8
12
0
30
20
10
MGG344
ID
(A)
VDS (V)
(4)
(5)
(6)
(1)
(2)
(3)
T
amb
= 25
C; t
p
= 80
s;
= 0.
(1) V
GS
= 10 V.
(2) V
GS
= 5 V.
(3) V
GS
= 4.5 V.
(4) V
GS
= 4 V.
(5) V
GS
= 3.5 V.
(6) V
GS
= 3 V.
Fig.8 Transfer characteristics; typical values.
V
DS
= 10 V; T
amb
= 25
C; t
p
= 80
s;
= 0.
handbook, halfpage
0
2
4
6
MGG345
20
30
0
10
VGS (V)
ID
(A)
Fig.9
Gate-source voltage and drain-source
voltage as a function of total gate charge;
typical values.
V
DD
= 12.5 V; I
D
= 3.2 A; T
amb
= 25
C.
(1) V
DS
.
(2) V
GS
.
handbook, halfpage
0
4
16
16
12
4
0
8
8
12
MGG346
(1)
(2)
V
(V)
QG (nC)
1997 Oct 22
8
Philips Semiconductors
Product specification
Dual N-channel enhancement mode
MOS transistor
PHN205
Fig.10 Source current as a function of source-drain
diode forward voltage; typical values.
V
GD
= 0.
(1) T
amb
= 150
C; t
p
= 300
s;
= 0.
(2) T
amb
= 25
C; t
p
= 300
s;
= 0.
(3) T
amb
=
-
65
C; t
p
= 300
s;
= 0.
handbook, halfpage
0
0.4
0.8
1.2
0
16
12
8
4
MGG347
IS
(A)
VSD (V)
(1)
(2)
(3)
handbook, halfpage
10
0
2
4
6
8
10
3
10
2
10
MGG348
RDSon
(m
)
VGS (V)
(1)
(2)
(3)
(4)
(5)
Fig.11 Drain-source on-state resistance as a
function of gate-source voltage;
typical values.
T
amb
= 25
C; t
p
= 300
s;
= 0.
V
DS
I
D
R
DSon
.
(1) I
D
= 0.5 A.
(2) I
D
= 1.6 A.
(3) I
D
= 3.2A.
(4) I
D
= 6.4 A.
(5) I
D
= 10 A.
Fig.12 Temperature coefficient of gate-source
threshold voltage as a function of junction
temperature; typical values.
V
GSth
at V
DS
= V
GS
; I
D
= 1 mA.
k
V
GSth
at T
j
V
GSth
at 25
C
--------------------------------------
=
handbook, halfpage
-
100
1.3
1.1
0.9
0.7
1.2
1
0.8
-
50
150
0
50
100
MGG349
Tj (
C)
k
handbook, halfpage
-
100
2
1.5
0
1
0.5
-
50
150
0
(1)
(2)
50
100
MGG359
Tj (
C)
k
Fig.13 Temperature coefficient of drain-source
on-resistance as a function of junction
temperature; typical values.
(1) R
DSon
at V
GS
= 10 V; I
D
= 3.2 A.
(2) R
DSon
at V
GS
= 4.5 V; I
D
= 1.6 A.
k
R
DSon
at T
j
R
DSon
at 25
C
-----------------------------------------
=
1997 Oct 22
9
Philips Semiconductors
Product specification
Dual N-channel enhancement mode
MOS transistor
PHN205
PACKAGE OUTLINE
UNIT
A
max.
A
1
A
2
A
3
b
p
c
D
(1)
E
(2)
(1)
e
H
E
L
L
p
Q
Z
y
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
inches
1.75
0.25
0.10
1.45
1.25
0.25
0.49
0.36
0.25
0.19
5.0
4.8
4.0
3.8
1.27
6.2
5.8
1.05
0.7
0.6
0.7
0.3
8
0
o
o
0.25
0.1
0.25
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
1.0
0.4
SOT96-1
X
w
M
A
A
1
A
2
b
p
D
H
E
L
p
Q
detail X
E
Z
e
c
L
v
M
A
(A )
3
A
4
5
pin 1 index
1
8
y
076E03S
MS-012AA
0.069
0.010
0.004
0.057
0.049
0.01
0.019
0.014
0.0100
0.0075
0.20
0.19
0.16
0.15
0.050
0.244
0.228
0.028
0.024
0.028
0.012
0.01
0.01
0.041
0.004
0.039
0.016
0
2.5
5 mm
scale
SO8: plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
95-02-04
97-05-22
1997 Oct 22
10
Philips Semiconductors
Product specification
Dual N-channel enhancement mode
MOS transistor
PHN205
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
1997 Oct 22
11
Philips Semiconductors
Product specification
Dual N-channel enhancement mode
MOS transistor
PHN205
NOTES
Internet: http://www.semiconductors.philips.com
Philips Semiconductors a worldwide company
Philips Electronics N.V. 1997
SCA55
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
South America: Rua do Rocio 220, 5th floor, Suite 51,
04552-903 So Paulo, SO PAULO - SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 829 1849
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 3 301 6312, Fax. +34 3 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 632 2000, Fax. +46 8 632 2745
Switzerland: Allmendstrasse 140, CH-8027 ZRICH,
Tel. +41 1 488 2686, Fax. +41 1 481 7730
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Talatpasa Cad. No. 5, 80640 GLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors, Marketing & Sales Communications,
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,
Tel. +61 2 9805 4455, Fax. +61 2 9805 4466
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010,
Fax. +43 160 101 1210
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 689 211, Fax. +359 2 689 102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America
Czech Republic: see Austria
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,
Tel. +45 32 88 2636, Fax. +45 31 57 0044
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615800, Fax. +358 9 61580920
France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex,
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427
Germany: Hammerbrookstrae 69, D-20097 HAMBURG,
Tel. +49 40 23 53 60, Fax. +49 40 23 536 300
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,
Tel. +30 1 4894 339/239, Fax. +30 1 4814 240
Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Indonesia: see Singapore
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,
Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Middle East: see Italy
Printed in The Netherlands
137107/00/03/pp12
Date of release: 1997 Oct 22
Document order number:
9397 750 02978