Document Outline
- GENERAL DESCRIPTION
- QUICK REFERENCE DATA
- PINNING - SOT93
- PIN CONFIGURATION
- SYMBOL
- LIMITING VALUES
- THERMAL RESISTANCES
- STATIC CHARACTERISTICS
- DYNAMIC CHARACTERISTICS
- MECHANICAL DATA
- DEFINITIONS
- LIFE SUPPORT APPLICATIONS
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508D
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
damper diode in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers.
Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case
dissipation.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE
= 0 V
-
1500
V
V
CEO
Collector-emitter voltage (open base)
-
700
V
I
C
Collector current (DC)
-
8
A
I
CM
Collector current peak value
-
15
A
P
tot
Total power dissipation
T
mb
25 C
-
125
W
V
CEsat
Collector-emitter saturation voltage
I
C
= 4.5 A; I
B
= 1.29 A
-
1.0
V
V
CEsat
Collector-emitter saturation voltage
I
C
= 4.5 A; I
B
= 1.1 A
-
5.0
V
I
Csat
Collector saturation current
4.5
-
A
V
F
Diode forward voltage
I
F
= 4.5 A
1.6
2.0
V
t
f
Fall time
I
CM
= 4.5 A; I
B(end)
= 1.1 A
0.4
0.6
s
PINNING - SOT93
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
tab
collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
Collector-emitter voltage peak value
V
BE
= 0 V
-
1500
V
V
CEO
Collector-emitter voltage (open base)
-
700
V
I
C
Collector current (DC)
-
8
A
I
CM
Collector current peak value
-
15
A
I
B
Base current (DC)
-
4
A
I
BM
Base current peak value
-
6
A
-I
B(AV)
Reverse base current
average over any 20 ms period
-
100
mA
-I
BM
Reverse base current peak value
1
-
5
A
P
tot
Total power dissipation
T
mb
25 C
-
125
W
T
stg
Storage temperature
-65
150
C
T
j
Junction temperature
-
150
C
1
2
3
tab
b
c
e
Rbe
1 Turn-off current.
December 1995
1
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508D
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-mb
Junction to mounting base
-
-
1.0
K/W
R
th j-a
Junction to ambient
in free air
45
-
K/W
STATIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES
Collector cut-off current
2
V
BE
= 0 V; V
CE
= V
CESMmax
-
-
1.0
mA
I
CES
V
BE
= 0 V; V
CE
= V
CESMmax
;
-
-
2.0
mA
T
j
= 125 C
I
EBO
Emitter cut-off current
V
EB
= 7.5 V; I
C
= 0 A
140
-
390
mA
BV
EBO
Emitter-base breakdown voltage
I
B
= 600 mA
7.5
13.5
-
V
R
be
Base-emitter resistance
V
EB
= 7.5 V
-
33
-
V
CEOsust
Collector-emitter sustaining voltage
I
B
= 0 A; I
C
= 100 mA;
700
-
-
V
L = 25 mH
V
CEsat
Collector-emitter saturation voltages I
C
= 4.5 A; I
B
= 1.1 A
-
-
5.0
V
V
CEsat
I
C
= 4.5 A; I
B
= 1.29 A
-
-
1.0
V
V
BEsat
Base-emitter saturation voltage
I
C
= 4.5 A; I
B
= 1.7 A
-
-
1.3
V
h
FE
DC current gain
I
C
= 1 A; V
CE
= 5 V
7
13
23
h
FE
I
C
= 4.5 A; V
CE
= 1 V
4
5.5
7.5
V
F
Diode forward voltage
I
F
= 4.5 A
-
1.6
2.0
V
DYNAMIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
C
c
Collector capacitance
I
E
= 0 A; V
CB
= 10 V; f = 1 MHz
80
-
pF
Switching times (16 kHz line
I
CM
= 4.5 A; I
B(end)
= 1.1 A; L
B
= 6
H;
deflection circuit)
-V
BB
= 4 V; (-dI
B
/dt = 0.6 A/
s)
t
s
Turn-off storage time
5.0
6.0
s
t
f
Turn-off fall time
0.4
0.6
s
Switching times (38 kHz line
I
CM
= 4.0 A; I
B(end)
= 0.9 A; L
B
= 6
H;
deflection circuit)
-V
BB
= 4 V; (-dI
B
/dt = 0.6 A/
s)
t
s
Turn-off storage time
4.7
5.7
s
t
f
Turn-off fall time
0.25
0.35
s
2 Measured with half sine-wave voltage (curve tracer).
December 1995
2
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508D
Fig.1. Switching times waveforms.
Fig.2. Switching times definitions.
Fig.3. Switching times test circuit.
Fig.4. Typical DC current gain. h
FE
= f (I
C
)
parameter V
CE
Fig.5. Typical base-emitter saturation voltage.
V
BE
sat = f (I
C
); parameter I
C
/I
B
Fig.6. Typical collector-emitter saturation voltage.
V
CE
sat = f (I
C
); parameter I
C
/I
B
IC
IB
VCE
ICM
IBend
64us
26us
20us
t
t
t
TRANSISTOR
DIODE
0.01
1
IC / A
BU2508D
100
10
1
0.1
10
Tj = 25 C
Tj = 125 C
1V
5V
h
FE
ICM
90 %
10 %
tf
ts
IBend
IC
IB
t
t
- IBM
0.1
1
10
IC / A
VBESAT / V
BU2508D
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
Tj = 25 C
Tj = 125 C
IC/IB=
3
4
5
+ 150 v nominal
adjust for ICM
1mH
12nF
D.U.T.
LB
IBend
-VBB
Rbe
0.1
1
10
IC / A
VCESAT / V
BU2508D
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
Tj = 25 C
Tj = 125 C
IC/IB=
5
4
3
December 1995
3
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508D
Fig.7. Typical base-emitter saturation voltage.
V
BE
sat = f (I
B
); parameter I
C
Fig.8. Typical collector-emitter saturation voltage.
V
CE
sat = f (I
B
); parameter I
C
Fig.9. Typical turn-off losses. T
j
= 85C
Eoff = f (I
B
); parameter I
C
; f = 16 kHz
Fig.10. Typical collector storage and fall time.
ts = f (I
B
); tf = f (I
B
); parameter I
C
; T
j
= 85C; f = 16 kHz
Fig.11. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
Fig.12. Normalised power dissipation.
PD% = 100
P
D
/P
D 25C
= f (T
mb
)
0
1
2
3
4
IB / A
VBESAT / V
BU2508D
1.2
1.1
1
0.9
0.8
0.7
0.6
Tj = 25 C
Tj = 125 C
IC=
6A
4.5A
3A
2A
0.1
1
10
IB / A
ts, tf / us
BU2508D
12
11
10
9
8
7
6
5
4
3
2
1
0
ts
tf
IC =
4.5A
3.5A
0.1
1
10
IB / A
VCESAT / V
BU2508D
10
1
0.1
Tj = 25 C
Tj = 125 C
Tj = 25 C
Tj = 125 C
IC=2A
3A
4.5A
6A
1E-06
1E-04
1E-02
1E+00
t / s
Zth / (K/W)
10
1
0.1
0.01
D = 0
0.02
0.05
0.1
0.2
0.5
D =
t
p
t
p
T
T
P
t
D
0.1
1
10
IB / A
Eoff / uJ
BU2508D
1000
100
10
IC = 4.5A
3.5A
0
20
40
60
80
100
120
140
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
December 1995
4
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508D
Fig.13. Forward bias safe operating area. T
mb
= 25C
(1)
P
tot
max line.
(2)
Second-breakdown limits
(independent of temperature).
I
Region of DC operation.
II
Extension for repetitive pulse operation.
1
10
100
1000
100
10
1
0.1
0.01
tp =
5 us
10
20
50
100
200
500
1 ms
2
5
10
20
DC
IC / A
VCE / V
ICM max
IC max
= 0.01
II
I
(1)
(2)
December 1995
5
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508D
MECHANICAL DATA
Dimensions in mm
Net Mass: 5 g
Fig.14. SOT93; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT93 envelope.
2. Epoxy meets UL94 V0 at 1/8".
2 max
12.7
max
2
4.6
max
21
max
0.4
1.6
0.5
min
13.6
min
4.4
5.5
1.15
0.95
11
0.5
M
2.2 max
dimensions within
this zone are
uncontrolled
1
2
3
4.25
4.15
13.6
14
15.2
max
December 1995
6
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2508D
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1995
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
December 1995
7
Rev 1.200
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