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Электронный компонент: PHP83N06T

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PHP83N06T
TrenchMOSTM Standard Level FET
Rev. 01 -- 11 January 2002
Product data
M3D307
1.
Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOSTM
1
technology, featuring very low on-state resistance.
Product availability:
PHP83N06T in SOT78
(TO-220AB).
2.
Features
s
TrenchMOSTM technology
s
Fast switching
s
Low on-state resistance.
3.
Applications
s
Switch mode power supplies
s
Uninterruptible power supplies
s
General purpose switching.
4.
Pinning information
1.
TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.
Table 1:
Pinning - SOT78, simplified outline and symbol
Pin
Description
Simplified outline
Symbol
1
gate (g)
SOT78 (TO-220AB)
2
drain (d)
3
source (s)
mb
mounting base;
connected to drain (d)
MBK106
1 2
mb
3
s
d
g
MBB076
Philips Semiconductors
PHP83N06T
TrenchMOSTM Standard Level FET
Product data
Rev. 01 -- 11 January 2002
2 of 13
9397 750 09122
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
V
DS
drain-source voltage (DC)
-
60
V
I
D
drain current (DC)
T
mb
= 25
C; V
GS
= 10 V
-
75
A
P
tot
total power dissipation
T
mb
= 25
C
-
166
W
T
j
junction temperature
-
175
C
R
DSon
drain-source on-state resistance
V
GS
= 10 V; I
D
= 25 A
T
j
= 25
C
9
12
m
T
j
= 175
C
-
24
m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
V
DS
drain-source voltage (DC)
-
60
V
V
DGR
drain-gate voltage (DC)
R
GS
= 20 k
-
60
V
V
GS
gate-source voltage (DC)
-
20
V
I
D
drain current (DC)
T
mb
= 25
C; V
GS
= 10 V;
Figure 2
and
3
-
75
A
T
mb
= 100
C; V
GS
= 10 V;
Figure 2
-
59
A
I
DM
peak drain current
T
mb
= 25
C; pulsed; t
p
10
s;
Figure 3
-
240
A
P
tot
total power dissipation
T
mb
= 25
C;
Figure 1
-
166
W
T
stg
storage temperature
-
55
+175
C
T
j
operating junction temperature
-
55
+175
C
Source-drain diode
I
DR
reverse drain current (DC)
T
mb
= 25
C
-
75
A
I
DRM
pulsed reverse drain current
T
mb
= 25
C; pulsed; t
p
10
s
-
240
A
Avalanche ruggedness
E
DS(AL)
non-repetitive avalanche energy
unclamped inductive load; I
D
= 65 A;
V
DS
55 V; V
GS
= 10 V; R
GS
= 50
;
starting T
mb
= 25
C
-
211
mJ
Philips Semiconductors
PHP83N06T
TrenchMOSTM Standard Level FET
Product data
Rev. 01 -- 11 January 2002
3 of 13
9397 750 09122
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
V
GS
4.5 V
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature.
Fig 2.
Normalized continuous drain current as a
function of mounting base temperature.
T
mb
= 25
C; I
DM
single pulse; V
GS
= 10 V
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03aa16
0
40
80
120
0
50
100
150
200
Tmb (
o
C)
Pder
(%)
03ag75
0
40
80
120
0
50
100
150
200
Tmb (C)
Ider
(%)
P
der
P
tot
P
tot 25 C
(
)
----------------------
100%
=
I
der
I
D
I
D 25 C
(
)
-------------------
100%
=
03ag66
1
10
102
103
1
10
102
VDS (V)
ID
(A)
DC
100 ms
RDSon = VDS
/ ID
10 ms
tp = 10 s
1 ms
100 s
Philips Semiconductors
PHP83N06T
TrenchMOSTM Standard Level FET
Product data
Rev. 01 -- 11 January 2002
4 of 13
9397 750 09122
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
7.
Thermal characteristics
7.1 Transient thermal impedance
Table 4:
Thermal characteristics
Symbol Parameter
Conditions
Min Typ Max Unit
R
th(j-mb)
thermal resistance from junction to mounting base
Figure 4
-
-
0.9
K/W
R
th(j-a)
thermal resistance from junction to ambient
SOT78 package; vertical in still air
-
60
-
K/W
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration.
03ag65
10-3
10-2
10-1
1
10-6
10-5
10-4
10-3
10-2
10-1
1
tp (s)
Zth(j-mb)
(K/W)
single pulse
= 0.5
0.2
0.1
0.05
0.02
tp
tp
T
P
t
T
=
Philips Semiconductors
PHP83N06T
TrenchMOSTM Standard Level FET
Product data
Rev. 01 -- 11 January 2002
5 of 13
9397 750 09122
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
T
j
= 25
C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V
(BR)DSS
drain-source breakdown voltage
I
D
= 0.25 mA; V
GS
= 0 V
T
j
= 25
C
60
-
-
V
T
j
=
-
55
C
55
-
-
V
V
GS(th)
gate-source threshold voltage
I
D
= 1 mA; V
DS
= V
GS
;
Figure 9
T
j
= 25
C
2
3
4
V
T
j
= 175
C
1
-
-
V
T
j
=
-
55
C
-
-
4.4
V
I
DSS
drain-source leakage current
V
DS
= 55 V; V
GS
= 0 V
T
j
= 25
C
-
0.05
10
A
T
j
= 175
C
-
-
500
A
I
GSS
gate-source leakage current
V
GS
=
20 V; V
DS
= 0 V
-
2
100
nA
R
DSon
drain-source on-state resistance
V
GS
= 10 V; I
D
= 25 A;
Figure 7
and
8
T
j
= 25
C
-
9
12
m
T
j
= 175
C
-
-
24
m
Dynamic characteristics
Q
g(tot)
total gate charge
V
DD
= 44 V; I
D
= 25 A; V
GS
= 10 V;
Figure 13
-
70
-
nC
Q
gs
gate-source charge
-
10
-
nC
Q
gd
gate-drain (Miller) charge
-
26
-
nC
C
iss
input capacitance
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
Figure 11
-
2230 3093 pF
C
oss
output capacitance
-
510
645
pF
C
rss
reverse transfer capacitance
-
290
467
pF
t
d(on)
turn-on delay time
V
DD
= 30 V; R
L
= 1.2
; V
GS
= 10 V; R
G
= 10
-
18
-
ns
t
r
rise time
-
90
-
ns
t
d(off)
turn-off delay time
-
84
-
ns
t
f
fall time
-
68
-
ns
Source-drain diode
V
SD
source-drain (diode forward) voltage I
S
= 25 A; V
GS
= 0 V;
Figure 12
-
0.85
1.2
V
t
rr
reverse recovery time
I
S
= 20 A; dI
S
/dt =
-
100 A/
s
V
GS
=
-
10 V; V
DS
= 30 V
-
62
-
ns
Q
r
recovered charge
-
140
-
nC
Philips Semiconductors
PHP83N06T
TrenchMOSTM Standard Level FET
Product data
Rev. 01 -- 11 January 2002
6 of 13
9397 750 09122
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
T
j
= 25
C; t
p
= 300
s
T
j
= 25
C and 175
C; V
DS
>
I
D
R
DSon
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
T
j
= 25
C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03ag67
0
20
40
60
80
0
0.4
0.8
1.2
1.6
2
VDS (V)
ID
(A)
7 V
Tj
= 25 C
VGS = 4.5 V
10 V
5.5 V
5 V
6 V
03afg69
0
20
40
60
80
0
2
4
6
8
VGS (V)
ID
(A)
VDS > ID x RDSon
Tj = 25 C
175 C
03ag68
0
0.005
0.01
0.015
0.02
0
20
40
60
80
ID (A)
RDSon
(
)
Tj = 25 C
10 V
7 V
VGS = 6 V
!== &
0
0.6
1.2
1.8
2.4
-60
0
60
120
180
Tj (
o
C)
a
a
R
DSon
R
DSon 25 C
(
)
----------------------------
=
Philips Semiconductors
PHP83N06T
TrenchMOSTM Standard Level FET
Product data
Rev. 01 -- 11 January 2002
7 of 13
9397 750 09122
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
I
D
= 1 mA; V
DS
= V
GS
T
j
= 25
C; V
DS
= V
GS
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
V
GS
= 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
03aa32
0
1
2
3
4
5
-60
0
60
120
180
T
j
(
o
C)
V
GS(th)
(V)
max
min
typ
03aa35
10-6
10-5
10-4
10-3
10-2
10-1
0
2
4
6
V
GS
(V)
I
D
(A)
max
typ
min
03ag71
102
103
104
10-1
1
10
102
VDS (V)
C
(pF)
Ciss
Coss
Crss
Philips Semiconductors
PHP83N06T
TrenchMOSTM Standard Level FET
Product data
Rev. 01 -- 11 January 2002
8 of 13
9397 750 09122
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
V
GS
= 0 V
T
j
= 25
C; I
D
= 25 A
Fig 12. Reverse diode current as a function of reverse
diode voltage; typical values.
Fig 13. Gate-source voltage as a function of turn-on
gate charge; typical values.
03ag70
0
20
40
60
80
0
0.4
0.8
1.2
VSD (V)
IS
(A)
Tj = 25 C
175 C
VGS = 0 V
03ag72
0
2
4
6
8
10
0
20
40
60
80
QG (nC)
VGS
(V)
ID = 25 A
Tj = 25 C
VDD = 14 V
44 V
Philips Semiconductors
PHP83N06T
TrenchMOSTM Standard Level FET
Product data
Rev. 01 -- 11 January 2002
9 of 13
9397 750 09122
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
9.
Package outline
Fig 14. SOT78 (TO-220AB).
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT78
SC-46
3-lead TO-220AB
D
D1
q
p
L
1
2
3
L1
(1)
b1
e
e
b
0
5
10 mm
scale
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
DIMENSIONS (mm are the original dimensions)
A
E
A1
c
Note
1. Terminals in this zone are not tinned.
Q
L2
UNIT
A1
b1
D1
e
p
mm
2.54
q
Q
A
b
D
c
L2
max.
3.0
3.8
3.6
15.0
13.5
3.30
2.79
3.0
2.7
2.6
2.2
0.7
0.4
15.8
15.2
0.9
0.7
1.3
1.0
4.5
4.1
1.39
1.27
6.4
5.9
10.3
9.7
L1
(1)
E
L
00-09-07
01-02-16
mounting
base
Philips Semiconductors
PHP83N06T
TrenchMOSTM Standard Level FET
Product data
Rev. 01 -- 11 January 2002
10 of 13
9397 750 09122
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
10. Revision history
Table 6:
Revision history
Rev Date
CPCN
Description
01
20020111
-
Product data; initial version
Philips Semiconductors
PHP83N06T
TrenchMOSTM Standard Level FET
Product data
Rev. 01 -- 11 January 2002
11 of 13
9397 750 09122
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
11. Data sheet status
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
12. Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are
stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics
sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information -- Applications that are described herein for any of these products are for illustrative purposes
only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified
use without further testing or modification.
13. Disclaimers
Life support -- These products are not designed for use in life support appliances, devices, or systems where
malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers
using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips
Semiconductors for any damages resulting from such application.
Right to make changes -- Philips Semiconductors reserves the right to make changes, without notice, in the products,
including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or
performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys
no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or
warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Data sheet status
[1]
Product status
[2]
Definition
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips Semiconductors
reserves the right to change the specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published at a
later date. Philips Semiconductors reserves the right to change the specification without notice, in order to
improve the design and supply the best possible product.
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the right to
make changes at any time in order to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change Notification (CPCN) procedure
SNW-SQ-650A.
9397 750 09122
Philips Semiconductors
PHP83N06T
TrenchMOSTM Standard Level FET
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 01 -- 11 January 2002
12 of 13
9397 750 09122
Philips Semiconductors
PHP83N06T
TrenchMOSTM Standard Level FET
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 01 -- 11 January 2002
12 of 13
Contact information
For additional information, please visit http://www.semiconductors.philips.com.
For sales office addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com.
Fax: +31 40 27 24825
Koninklijke Philips Electronics N.V. 2002.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 11 January 2002
Document order number: 9397 750 09122
Contents
Philips Semiconductors
PHP83N06T
TrenchMOSTM Standard Level FET
1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
3
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
4
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
5
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
6
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7
Thermal characteristics. . . . . . . . . . . . . . . . . . . 5
7.1
Transient thermal impedance . . . . . . . . . . . . . . 5
8
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6
9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11
11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12
12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12