Philips Semiconductors
Preliminary specification
PowerMOS transistors
PHP9N60E, PHB9N60E, PHW9N60E
Avalanche energy rated
FEATURES
SYMBOL
QUICK REFERENCE DATA
Repetitive Avalanche Rated
Fast switching
V
DSS
= 600 V
Stable off-state characteristics
High thermal cycling performance
I
D
= 8.7 A
Low thermal resistance
R
DS(ON)
0.85
GENERAL DESCRIPTION
N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies,
T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching
applications.
The PHP9N60E is supplied in the SOT78 (TO220AB) conventional leaded package.
The PHW9N60E is supplied in the SOT429 (TO247) conventional leaded package.
The PHB9N60E is supplied in the SOT404 surface mounting package.
PINNING
SOT78 (TO220AB)
SOT404
SOT429 (TO247)
PIN
DESCRIPTION
1
gate
2
drain
1
3
source
tab
drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DSS
Drain-source voltage
T
j
= 25 C to 150C
-
600
V
V
DGR
Drain-gate voltage
T
j
= 25 C to 150C; R
GS
= 20 k
-
600
V
V
GS
Gate-source voltage
-
30
V
I
D
Continuous drain current
T
mb
= 25 C; V
GS
= 10 V
-
8.7
A
T
mb
= 100 C; V
GS
= 10 V
-
5.5
A
I
DM
Pulsed drain current
T
mb
= 25 C
-
35
A
P
D
Total dissipation
T
mb
= 25 C
-
156
W
T
j
, T
stg
Operating junction and
- 55
150
C
storage temperature range
d
g
s
1 2 3
tab
1
3
tab
2
2
3
1
1 It is not possible to make connection to pin 2 of the SOT404 package.
January 1998
1
Rev 1.000
Philips Semiconductors
Preliminary specification
PowerMOS transistors
PHP9N60E, PHB9N60E, PHW9N60E
Avalanche energy rated
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
E
AS
Non-repetitive avalanche
Unclamped inductive load, I
D
= 8.7 A;
-
678
mJ
energy
V
DD
50 V; starting T
j
= 25C; R
GS
= 50
;
V
GS
= 10 V
E
AR
Repetitive avalanche energy
2
-
17
mJ
I
AS
, I
AR
Repetitive and non-repetitive
-
8.7
A
avalanche current
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction
-
-
0.8
K/W
to mounting base
R
th j-a
Thermal resistance junction
SOT78 package, in free air
-
60
-
K/W
to ambient
SOT429 package, in free air
-
45
-
K/W
SOT404 package, pcb mounted, minimum
-
50
-
K/W
footprint
ELECTRICAL CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
V
(BR)DSS
Drain-source breakdown
V
GS
= 0 V; I
D
= 0.25 mA
600
-
-
V
voltage
V
(BR)DSS
/ Drain-source breakdown
V
DS
= V
GS
; I
D
= 0.25 mA
-
0.1
-
%/K
T
j
voltage temperature
coefficient
R
DS(ON)
Drain-source on resistance
V
GS
= 10 V; I
D
= 4.4 A
-
0.7
0.85
V
GS(TO)
Gate threshold voltage
V
DS
= V
GS
; I
D
= 0.25 mA
2.0
3.0
4.0
V
g
fs
Forward transconductance
V
DS
= 30 V; I
D
= 4.4 A
4
5.5
-
S
I
DSS
Drain-source leakage current V
DS
= 600 V; V
GS
= 0 V
-
2
100
A
V
DS
= 480 V; V
GS
= 0 V; T
j
= 125 C
-
80
1000
A
I
GSS
Gate-source leakage current V
GS
=
30 V; V
DS
= 0 V
-
10
200
nA
Q
g(tot)
Total gate charge
I
D
= 8.7 A; V
DD
= 480 V; V
GS
= 10 V
-
130
150
nC
Q
gs
Gate-source charge
-
8
10
nC
Q
gd
Gate-drain (Miller) charge
-
60
85
nC
t
d(on)
Turn-on delay time
V
DD
= 300 V; R
D
= 33
;
-
20
-
ns
t
r
Turn-on rise time
R
G
= 5.6
-
55
-
ns
t
d(off)
Turn-off delay time
-
160
-
ns
t
f
Turn-off fall time
-
70
-
ns
L
d
Internal drain inductance
Measured from tab to centre of die
-
3.5
-
nH
L
d
Internal drain inductance
Measured from drain lead to centre of die
-
4.5
-
nH
(SOT78 and SOT429 packages only)
L
s
Internal source inductance
Measured from source lead to source
-
7.5
-
nH
bond pad
C
iss
Input capacitance
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
-
1500
-
pF
C
oss
Output capacitance
-
200
-
pF
C
rss
Feedback capacitance
-
112
-
pF
2 pulse width and repetition rate limited by T
j
max.
January 1998
2
Rev 1.000
Philips Semiconductors
Preliminary specification
PowerMOS transistors
PHP9N60E, PHB9N60E, PHW9N60E
Avalanche energy rated
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
I
S
Continuous source current
T
mb
= 25C
-
-
8.7
A
(body diode)
I
SM
Pulsed source current (body
T
mb
= 25C
-
-
35
A
diode)
V
SD
Diode forward voltage
I
S
= 8.7 A; V
GS
= 0 V
-
-
1.2
V
t
rr
Reverse recovery time
I
S
= 8.7 A; V
GS
= 0 V; dI/dt = 100 A/
s
-
740
-
ns
Q
rr
Reverse recovery charge
-
9
-
C
January 1998
3
Rev 1.000
Philips Semiconductors
Preliminary specification
PowerMOS transistors
PHP9N60E, PHB9N60E, PHW9N60E
Avalanche energy rated
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.1. SOT78 (TO220AB); pin 2 connected to mounting base.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for SOT78 (TO220) envelopes.
3. Epoxy meets UL94 V0 at 1/8".
10,3
max
3,7
2,8
3,0
3,0 max
not tinned
1,3
max
(2x)
1 2 3
2,4
0,6
4,5
max
5,9
min
15,8
max
1,3
2,54 2,54
0,9 max (3x)
13,5
min
January 1998
4
Rev 1.000
Philips Semiconductors
Preliminary specification
PowerMOS transistors
PHP9N60E, PHB9N60E, PHW9N60E
Avalanche energy rated
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.4 g
Fig.2. SOT404 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
Fig.3. SOT404 : soldering pattern for surface mounting.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Epoxy meets UL94 V0 at 1/8".
11 max
4.5 max
1.4 max
10.3 max
0.5
15.4
2.5
0.85 max
(x2)
2.54 (x2)
17.5
11.5
9.0
5.08
3.8
2.0
January 1998
5
Rev 1.000
Philips Semiconductors
Preliminary specification
PowerMOS transistors
PHP9N60E, PHB9N60E, PHW9N60E
Avalanche energy rated
MECHANICAL DATA
Dimensions in mm
Net Mass: 5 g
Fig.4. SOT429; pin 2 connected to mounting base.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for SOT429 envelope.
3. Epoxy meets UL94 V0 at 1/8".
5.3
4.0
21
max
15.5
min
1
2.2 max
0.4
2.5
0.9 max
5.3 max
3.5
16 max
5.45
seating
plane
5.45
M
o
max
15.5
max
3.2 max
2
3
1.1
3.5
1.8
7.3
max
January 1998
6
Rev 1.000
Philips Semiconductors
Preliminary specification
PowerMOS transistors
PHP9N60E, PHB9N60E, PHW9N60E
Avalanche energy rated
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
January 1998
7
Rev 1.000
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