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Электронный компонент: PHT4NQ10T

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PHT4NQ10T
N-channel enhancement mode field-effect transistor
Rev. 01 -- 31 July 2000
Product specification
c
c
1.
Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOSTM
1
technology.
Product availability:
PHT4NQ10T in SOT223.
2.
Features
s
TrenchMOSTM technology
s
Very fast switching
s
Surface mount package.
3.
Applications
s
Primary side switch in DC to DC converters
s
High speed line driver
s
Fast general purpose switch.
4.
Pinning information
1.
TrenchMOS is a trademark of Royal Philips Electronics.
Table 1:
Pinning - SOT223, simplified outline and symbol
Pin
Description
Simplified outline
Symbol
1
gate (g)
SOT223
N-channel MOSFET
2
drain (d)
3
source (g)
4
drain (d)
1
2
3
4
03ab45
d
g
s
03ab30
Philips Semiconductors
PHT4NQ10T
N-channel enhancement mode field-effect transistor
Product specification
Rev. 01 -- 31 July 2000
2 of 13
9397 750 07337
Philips Electronics N.V. 2000. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
V
DS
drain-source voltage (DC)
T
j
= 25 to 150
C
-
100
V
I
D
drain current (DC)
T
sp
= 25
C; V
GS
= 10 V
-
3.5
A
P
tot
total power dissipation
T
sp
= 25
C
-
6.9
W
T
j
junction temperature
-
150
C
R
DSon
drain-source on-state resistance
V
GS
= 10 V; I
D
= 1.75 A
200
250
m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
V
DS
drain-source voltage (DC)
T
j
= 25 to 150
C
-
100
V
V
DGR
drain-gate voltage (DC)
T
j
= 25 to 150
C; R
GS
= 20 k
-
100
V
V
GS
gate-source voltage (DC)
-
20
V
I
D
drain current (DC)
T
sp
= 25
C; V
GS
= 10 V;
Figure 2
and
3
-
3.5
A
T
sp
= 100
C; V
GS
= 10 V;
Figure 2
-
2.2
A
I
DM
peak drain current
T
sp
= 25
C; pulsed; t
p
10
s;
Figure 3
-
14
A
P
tot
total power dissipation
T
sp
= 25
C;
Figure 1
-
6.9
W
T
stg
storage temperature
-
65
+150
C
T
j
operating junction temperature
-
65
+150
C
Source-drain diode
I
S
source (diode forward) current (DC)
T
sp
= 25
C
-
3.5
A
I
SM
peak source (diode forward) current
T
sp
= 25
C; pulsed; t
p
10
s
-
14
A
Avalanche ruggedness
E
AS
non-repetitive avalanche energy
unclamped inductive load; I
D
= 3.5 A;
t
p
= 0.2 ms; V
DD
15 V; R
GS
= 50
;
V
GS
= 10 V; starting T
j
= 25
C;
Figure 4
-
45
mJ
I
AS
non-repetitive avalanche current
unclamped inductive load; V
DD
15 V;
R
GS
= 50
; V
GS
= 10 V;
Figure 4
-
3.5
A
Philips Semiconductors
PHT4NQ10T
N-channel enhancement mode field-effect transistor
Product specification
Rev. 01 -- 31 July 2000
3 of 13
9397 750 07337
Philips Electronics N.V. 2000. All rights reserved.
V
GS
10 V
Fig 1.
Normalized total power dissipation as a
function of solder point temperature.
Fig 2.
Normalized continuous drain current as a
function of solder point temperature.
T
sp
= 25
C; I
DM
is single pulse.
Unclamped inductive load; V
DD
15 V; R
GS
= 50
;
V
GS
= 10 V; starting T
j
= 25
C and 125
C.
Fig 3.
Safe operating area; continuous and peak drain
currents as a function of drain-source voltage.
Fig 4.
Non-repetitive avalanche ruggedness current
as a function of pulse duration.
03aa17
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
P
der
Tsp (
o
C)
(%)
03aa25
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
I
der
T
sp
(
o
C)
(%)
P
der
P
tot
P
tot 25 C
(
)
----------------------
100%
=
I
der
I
D
I
D 25 C
(
)
-------------------
100%
=
03aa88
10-2
10-1
1
10
102
1
10
102
103
VDS (V)
ID
(A)
D.C.
100 ms
10 ms
RDSon = VDS/ ID
1 ms
tp = 10
s
100
s
03aa97
10-1
1
10
10-2
10-1
1
10
tp (ms)
IAS
(A)
Tj prior to avalanche = 125oC
25oC
Philips Semiconductors
PHT4NQ10T
N-channel enhancement mode field-effect transistor
Product specification
Rev. 01 -- 31 July 2000
4 of 13
9397 750 07337
Philips Electronics N.V. 2000. All rights reserved.
7.
Thermal characteristics
7.1 Transient thermal impedance
Table 4:
Thermal characteristics
Symbol
Parameter
Conditions
Value
Unit
R
th(j-sp)
thermal resistance from junction to solder
point
mounted on a metal clad substrate;
Figure 5
18
K/W
R
th(j-a)
thermal resistance from junction to ambient
mounted on a printed circuit board;
minimum footprint
150
K/W
Mounted on a metal clad substrate.
Fig 5.
Transient thermal impedance from junction to solder point as a function of
pulse duration.
03aa87
10-2
10-1
1
10
102
10-5
10-4
10-3
10-2
10-1
1
10
tp (s)
Zth(j-sp)
(K/W)
single pulse
= 0.5
0.2
0.1
0.05
0.02
tp
tp
T
P
t
T
=
Philips Semiconductors
PHT4NQ10T
N-channel enhancement mode field-effect transistor
Product specification
Rev. 01 -- 31 July 2000
5 of 13
9397 750 07337
Philips Electronics N.V. 2000. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
T
j
= 25
C unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V
(BR)DSS
drain-source breakdown
voltage
I
D
= 250
A; V
GS
= 0 V
T
j
= 25
C
100
130
-
V
T
j
=
-
55
C
89
-
-
V
V
GS(th)
gate-source threshold voltage I
D
= 1 mA; V
DS
= V
GS
T
j
= 25
C;
Figure 10
2
3
4
V
T
j
= 150
C;
Figure 10
1.2
-
-
V
T
j
=
-
55
C;
Figure 10
-
-
6
V
I
DSS
drain-source leakage current
V
DS
= 100 V; V
GS
= 0 V
T
j
= 25
C
-
1
25
A
T
j
= 150
C
-
4
250
A
I
GSS
gate-source leakage current
V
GS
=
20 V; V
DS
= 0 V
-
10
100
nA
R
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 1.75 A
T
j
= 25
C;
Figure 8
and
9
-
200
250
m
T
j
= 150
C;
Figure 9
-
-
575
m
Dynamic characteristics
g
fs
forward transconductance
V
DS
= 5 V; I
D
= 3.5 A;
Figure 12
-
4.2
-
S
Q
g(tot)
total gate charge
I
D
= 3.5 A; V
DS
= 80 V;
V
GS
= 10 V;
Figure 15
-
7.4
-
nC
Q
gs
gate-source charge
-
1.5
-
nC
Q
gd
gate-drain (Miller) charge
-
3.3
-
nC
C
iss
input capacitance
V
GS
= 0 V; V
DS
= 25 V;
f = 1 MHz;
Figure 13
-
300
-
pF
C
oss
output capacitance
-
44
-
pF
C
rss
reverse transfer capacitance
-
21
-
pF
t
d(on)
turn-on delay time
V
DD
= 50 V; R
D
= 15
;
V
GS
= 10 V; R
G
= 6
-
8
-
ns
t
r
turn-off rise time
-
13
-
ns
t
d(off)
turn-off delay time
-
20
-
ns
t
f
turn-off fall time
-
11
-
ns
Source-drain diode
V
SD
source-drain (diode forward)
voltage
I
S
= 3.5 A; V
GS
= 0 V;
Figure 14
-
0.87
1.5
V
t
rr
reverse recovery time
I
S
= 3.5 A;
dI
S
/dt =
-
100 A/
s;
V
GS
= 0 V; V
DS
= 30 V
-
50
-
ns
Q
r
recovered charge
-
100
-
nC
Philips Semiconductors
PHT4NQ10T
N-channel enhancement mode field-effect transistor
Product specification
Rev. 01 -- 31 July 2000
6 of 13
9397 750 07337
Philips Electronics N.V. 2000. All rights reserved.
T
j
= 25
C
T
j
= 25
C and 150
C; V
DS
>
I
D
R
DSon
Fig 6.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 7.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
T
j
= 25
C
Fig 8.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 9.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03aa90
0
1
2
3
4
5
6
7
8
9
10
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
VDS (V)
ID
(A)
4.6 V
Tj = 25oC
VGS = 10V
4.8 V
5 V
5.5 V
4.4 V
6 V
4.2 V
03aa92
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
VGS (V)
ID
(A)
VDS > ID X RDSon
Tj = 25oC
150oC
03aa91
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0
1
2
3
4
5
6
7
8
9
10
ID (A)
RDSon
(
)
VGS = 10V
Tj = 25oC
6V
5.5 V
4.4 V
5 V
4.8V
4.6V
03aa29
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
-60
-20
20
60
100
140
180
T
j
(
o
C)
a
a
R
DSon
R
DSon 25 C
(
)
----------------------------
=
Philips Semiconductors
PHT4NQ10T
N-channel enhancement mode field-effect transistor
Product specification
Rev. 01 -- 31 July 2000
7 of 13
9397 750 07337
Philips Electronics N.V. 2000. All rights reserved.
I
D
= 1 mA; V
DS
= V
GS
T
j
= 25
C; V
DS
= 5 V
Fig 10. Gate-source threshold voltage as a function of
junction temperature.
Fig 11. Sub-threshold drain current as a function of
gate-source voltage.
T
j
= 25
C and 150
C; V
DS
>
I
D
R
DSon
V
GS
= 0 V; f = 1 MHz
Fig 12. Forward transconductance as a function of
drain current; typical values.
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
03aa32
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
-60
-20
20
60
100
140
180
V
GS(th)
T
j
(
o
C)
(V)
max.
typ.
min
03aa35
10-6
10-5
10-4
10-3
10-2
10-1
0
1
2
3
4
5
max
typ
min
V
GS
(V)
ID
(A)
03aa93
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
1
2
3
4
5
6
7
8
9
10
ID (A)
gfs
(S)
Tj = 25
oC
150oC
VDS > ID X RDSon
03aa95
10
102
103
10-1
1
10
102
VDS (V)
Ciss, Coss,
Crss (pF)
Ciss
Coss
Crss
Philips Semiconductors
PHT4NQ10T
N-channel enhancement mode field-effect transistor
Product specification
Rev. 01 -- 31 July 2000
8 of 13
9397 750 07337
Philips Electronics N.V. 2000. All rights reserved.
T
j
= 25
C and 150
C; V
GS
= 0 V
I
D
= 3.5 A; V
DS
= 80 V
Fig 14. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
Fig 15. Gate-source voltage as a function of gate
charge; typical values.
03aa94
0
1
2
3
4
5
6
7
8
9
10
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
VSD (V)
IS
(A)
Tj = 25oC
150oC
VGS = 0 V
03aa96
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
0 1
2 3
4 5 6
7 8
9 10 11 12
QG (nC)
VGS
(V)
ID = 3.5 A
Tj = 25oC
VDS = 20 V
VDS = 80 V
Philips Semiconductors
PHT4NQ10T
N-channel enhancement mode field-effect transistor
Product specification
Rev. 01 -- 31 July 2000
9 of 13
9397 750 07337
Philips Electronics N.V. 2000. All rights reserved.
9.
Package outline
Fig 16. SOT223.
UNIT
A
1
b
p
c
D
E
e
1
H
E
L
p
Q
y
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
0.10
0.01
1.8
1.5
0.80
0.60
b
1
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
2.3
e
4.6
7.3
6.7
1.1
0.7
0.95
0.85
0.1
0.1
0.2
DIMENSIONS (mm are the original dimensions)
SOT223
SC-73
97-02-28
99-09-13
w
M
b
p
D
b
1
e
1
e
A
A
1
L
p
Q
detail X
H
E
E
v
M
A
A
B
B
c
y
0
2
4 mm
scale
A
X
1
3
2
4
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
SOT223
Philips Semiconductors
PHT4NQ10T
N-channel enhancement mode field-effect transistor
Product specification
Rev. 01 -- 31 July 2000
10 of 13
9397 750 07337
Philips Electronics N.V. 2000. All rights reserved.
10. Revision history
Table 6:
Revision history
Rev Date
CPCN
Description
01
20000731
-
Product specification; initial version.
Philips Semiconductors
PHT4NQ10T
N-channel enhancement mode field-effect transistor
Product specification
Rev. 01 -- 31 July 2000
11 of 13
9397 750 07337
Philips Electronics N.V. 2000 All rights reserved.
11. Data sheet status
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
12. Definitions
Short-form specification -- The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition -- Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information -- Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
13. Disclaimers
Life support -- These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes -- Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design
and/or
performance.
Philips
Semiconductors
assumes
no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products
are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
Datasheet status
Product status
Definition
[1]
Objective specification
Development
This data sheet contains the design target or goal specifications for product development. Specification may
change in any manner without notice.
Preliminary specification
Qualification
This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips
Semiconductors reserves the right to make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any
time without notice in order to improve design and supply the best possible product.
Philips Semiconductors
PHT4NQ10T
N-channel enhancement mode field-effect transistor
Product specification
Rev. 01 -- 31 July 2000
12 of 13
9397 750 07337
Philips Electronics N.V. 2000. All rights reserved.
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Internet: http://www.semiconductors.philips.com
(SCA70)
Philips Electronics N.V. 2000.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
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thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 31 July 2000
Document order number: 9397 750 07337
Contents
Philips Semiconductors
PHT4NQ10T
N-channel enhancement mode field-effect transistor
1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
3
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
4
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
5
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
6
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
7
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
7.1
Transient thermal impedance . . . . . . . . . . . . . . 4
8
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11