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Электронный компонент: PHX18NQ20T

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PHX18NQ20T
N-channel enhancement mode field-effect transistor
Rev. 01 -- 28 August 2000
Product specification
c
c
M3D308
1.
Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOSTM
1
technology.
Product availability:
PHX18NQ20T in SOT186A.
2.
Features
s
TrenchMOSTM technology
s
Low on-state resistance
s
Fast switching
s
Low thermal resistance
s
Isolated tab.
3.
Applications
s
Off-line switched mode power supplies
s
Television and computer monitor power supplies
s
DC to DC converters
s
Motor control circuits
4.
Pinning information
1.
TrenchMOS is a trademark of Royal Philips Electronics.
Table 1:
Pinning - SOT186A, simplified outline and symbol
Pin
Description
Simplified outline
Symbol
1
gate (g)
2
drain (d)
3
source (s)
Tab
isolated
1 2 3
isolated tab
03ab49
d
g
s
03ab30
Philips Semiconductors
PHX18NQ20T
N-channel FET
Product specification
Rev. 01 -- 28 August 2000
2 of 15
9397 750 07452
Philips Electronics N.V. 2000. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
V
DS
drain-source voltage (DC)
T
j
= 25 to 150
C
-
200
V
I
D
drain current (DC)
T
hs
= 25
C; V
GS
= 10 V
-
8.2
A
P
tot
total power dissipation
T
hs
= 25
C
-
30
W
T
j
junction temperature
-
150
C
R
DSon
drain-source on-state resistance
V
GS
= 10 V; I
D
= 8 A; T
j
= 25
o
C
130
180
m
V
GS
= 10 V; I
D
= 8 A; T
j
= 150
C
-
450
m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
V
DS
drain-source voltage (DC)
T
j
= 25 to 150
C
-
200
V
V
DGR
drain-gate voltage (DC)
T
j
= 25 to 150
C; R
GS
= 20 k
-
200
V
V
GS
gate-source voltage (DC)
-
20
V
I
D
drain current (DC)
T
hs
= 25
C; V
GS
= 10 V;
Figure 2
and
3
-
8.2
A
T
hs
= 100
C; V
GS
= 10 V;
Figure 2
-
5.2
A
I
DM
peak drain current
T
hs
= 25
C; pulsed; t
p
10
s;
Figure 3
-
33
A
P
tot
total power dissipation
T
hs
= 25
C;
Figure 1
-
30
W
T
stg
storage temperature
-
55
+150
C
T
j
operating junction temperature
-
55
+150
C
Source-drain diode
I
S
source (diode forward) current (DC)
T
amb
= 25
C
-
8.2
A
I
SM
peak source (diode forward) current
T
amb
= 25
C; pulsed; t
p
10
s
-
33
A
Philips Semiconductors
PHX18NQ20T
N-channel FET
Product specification
Rev. 01 -- 28 August 2000
3 of 15
9397 750 07452
Philips Electronics N.V. 2000. All rights reserved.
V
GS
4.5 V
Fig 1.
Normalized total power dissipation as a
function of ambient temperature.
Fig 2.
Normalized continuous drain current as a
function of ambient temperature.
T
amb
= 25
C; I
DM
is single pulse.
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03aa11
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
P
der
T
mb
(
o
C)
(%)
03aa19
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
I
der
T
amb
(
o
C)
(%)
P
der
P
tot
P
tot 25 C
(
)
----------------------
100%
=
I
der
I
D
I
D 25 C
(
)
-------------------
100%
=
03ac74
10-1
1
10
102
1
10
102
103
VDS (V)
ID
(A)
RDSon = VDS / ID
D.C.
tp = 10
s
100
s
1 ms
10 ms
100 ms
tp
tp
T
P
t
T
=
Philips Semiconductors
PHX18NQ20T
N-channel FET
Product specification
Rev. 01 -- 28 August 2000
4 of 15
9397 750 07452
Philips Electronics N.V. 2000. All rights reserved.
7.
Thermal characteristics
7.1 Transient thermal impedance
Table 4:
Thermal characteristics
Symbol
Parameter
Conditions
Value
Unit
R
th(j-hs)
thermal resistance from junction to heatsink
4.17
K/W
R
th(j-a)
thermal resistance from junction to ambient
vertical in still air;
lead length
5 mm;
Figure 4
55
K/W
Fig 4.
Transient thermal impedance from junction to ambient as a function of pulse
duration.
03ac73
10-3
10-2
10-1
1
10
10-6
10-5
10-4
10-3
10-2
10-1
1
10
tp (s)
Zth(j-a)

(K/W)
0.2
single pulse
0.02
0.05
0.1
tp
tp
T
P
t
T
=
= 0.5
Philips Semiconductors
PHX18NQ20T
N-channel FET
Product specification
Rev. 01 -- 28 August 2000
5 of 15
9397 750 07452
Philips Electronics N.V. 2000. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
T
j
= 25
C unless otherwise specified
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V
(BR)DSS
drain-source breakdown
voltage
I
D
= 0.25 mA; V
GS
= 0 V
T
j
= 25
C
200
-
-
V
T
j
=
-
55
C
178
-
-
V
V
GS(th)
gate-source threshold voltage I
D
= 1 mA; V
DS
= V
GS
;
Figure 9
T
j
= 25
C
2
3
4
V
T
j
= 150
C
1.2
-
-
V
T
j
=
-
55
C
-
-
6
V
I
DSS
drain-source leakage current
V
DS
= 200 V; V
GS
= 0 V
T
j
= 25
C
-
0.05
10
A
T
j
= 150
C
-
-
100
A
I
GSS
gate-source leakage current
V
GS
=
10 V; V
DS
= 0 V
-
10
100
nA
R
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 8 A;
Figure 7
and
8
T
j
= 25
C
-
130
180
m
T
j
= 150
C
-
-
450
m
Dynamic characteristics
g
fs
forward transconductance
V
DS
= 25 V; I = 8 A;
Figure 11
-
15
-
S
C
iss
input capacitance
V
GS
= 0 V; V
DS
= 25 V;
f = 1 MHz;
Figure 12
-
1850
-
pF
C
oss
output capacitance
-
170
_
pF
C
rss
reverse transfer capacitance
-
91
_
pF
Q
g(tot)
total gate charge
I
D
= 18 A; V
DD
= 160 V;
V
GS
= 10 V;
Figure 14
-
40
-
nC
Q
gs
gate-source charge
-
9
-
nC
Q
gd
gate-drain (Miller) charge
-
22
-
nC
t
on
turn-on time
V
DD
= 100 V; R
D
= 5.6
;
V
GS
= 10 V; R
G
= 5.6
;
Resistive load
-
3
_
ns
t
off
turn-off time
-
92
_
ns
Source-drain diode
V
SD
source-drain (diode forward)
voltage
I
S
= 16 A; V
GS
= 0 V;
Figure 13
-
0.9
1.2
V
t
rr
reverse recovery time
I
S
= 16 A;
dI
S
/dt =
-
100 A/
s;
V
GS
= 0 V; V
DS
= 25 V
-
130
-
ns
Q
r
recovered charge
-
0.8
-
C
Philips Semiconductors
PHX18NQ20T
N-channel FET
Product specification
Rev. 01 -- 28 August 2000
6 of 15
9397 750 07452
Philips Electronics N.V. 2000. All rights reserved.
T
j
= 25
C
T
j
= 25
C and 150
C; V
DS
>
I
D
R
DSon
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
T
j
= 25
C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03ac75
0
2
4
6
8
10
12
14
16
18
20
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
VDS (V)
ID
8 V
4.5 V
5 V
5.5 V
6 V
Tj = 25
o
C
VGS = 10V
(A)
03ac82
0
2
4
6
8
10
12
14
16
18
20
0
1
2
3
4
5
6
VGS (V)
ID
Tj = 25 oC
150 oC
(A)
V
DS
> I
D
X R
DSon
03ac80
0
0.05
0.1
0.15
0.2
0.25
0.3
0
2
4
6
8
10 12 14 16 18 20
ID (A)
RDSon
(
)
8 V
4.5 V
5 V
5.5 V
6 V
Tj = 25
oC
VGS = 10 V
03aa31
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
-60
-20
20
60
100
140
180
T
j
(
o
C)
a
a
R
DSon
R
DSon 25 C
(
)
----------------------------
=
Philips Semiconductors
PHX18NQ20T
N-channel FET
Product specification
Rev. 01 -- 28 August 2000
7 of 15
9397 750 07452
Philips Electronics N.V. 2000. All rights reserved.
I
D
= 1 mA; V
DS
= V
GS
T
j
= 25
C; V
DS
= 5 V
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
T
j
= 25
C and 150
C; V
DS
>
I
D
R
DSon
V
GS
= 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
03aa32
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
-60
-20
20
60
100
140
180
V
GS(th)
T
j
(
o
C)
(V)
max.
typ.
min
03aa35
10-6
10-5
10-4
10-3
10-2
10-1
0
1
2
3
4
5
max
typ
min
V
GS
(V)
ID
(A)
03ac76
0
5
10
15
20
25
0
2
4
6
8
10
12
14
16
18
20
ID (A)
150
o
C
Tj = 25
oC
VDS > ID X RDSon
gfs
(S)
03ac78
10
102
103
104
10-1
1
10
102
VDS (V)
Ciss, Coss,
Crss (pF)
Crss
Coss
Ciss
Philips Semiconductors
PHX18NQ20T
N-channel FET
Product specification
Rev. 01 -- 28 August 2000
8 of 15
9397 750 07452
Philips Electronics N.V. 2000. All rights reserved.
9.
Isolation characteristics
T
j
= 25
C and 150
C; V
GS
= 0 V
Fig 13. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
Fig 14. Gate-source voltage as a function of gate
charge; typical values.
03ac77
0
2
4
6
8
10
12
14
16
18
20
0
0.2
0.4
0.6
0.8
1
1.2
VSD (V)
IS
VGS = 0 V
Tj = 25
o
C
150
o
C
(A)
03ac79
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
0
5
10 15 20 25 30 35 40 45 50 55 60
QG (nC)
VGS
(V)
ID = 18 A
Tj = 25
oC
VDD = 40V
VDD = 160V
Table 6:
Isolation characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
V
isol
RMS isolation voltage
from all three terminals
to external heatsink.
f = 50-60 Hz; sinusoidal
waveform; RH
65%; clean
and dust-free.
-
-
2500
V
C
isol
Capacitance from pin 2
(drain) to external
heatsink.
-
10
-
pF
Philips Semiconductors
PHX18NQ20T
N-channel FET
Product specification
Rev. 01 -- 28 August 2000
9 of 15
9397 750 07452
Philips Electronics N.V. 2000. All rights reserved.
10. Package outline
Fig 15. SOT186A.
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT186A
3-lead TO-220F
0
5
10 mm
scale
Plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3 lead TO-220 'full pack'
SOT186A
A
A1
Q
c
K
j
Notes
1. Terminal dimensions within this zone are uncontrolled. Terminals in this zone are not tinned.
2. Both recesses are
2.5
0.8 max. depth
D
D1
L
L2
L1
b1
b2
e1
e
b
w
M
1
2
3
q
E
P
T
UNIT
D
b1
D1
e
q
Q
P
L
c
L2
(1)
max.
e1
A
5.08
3
mm
4.6
4.0
A1
2.9
2.5
b
0.9
0.7
1.1
0.9
b2
1.4
1.2
0.7
0.4
15.8
15.2
6.5
6.3
E
10.3
9.7
2.54
14.4
13.5
T
(2)
2.5
0.4
L1
3.30
2.79
j
2.7
2.3
K
0.6
0.4
2.6
2.3
3.0
2.6
w
3.2
3.0
DIMENSIONS (mm are the original dimensions)
97-06-11
99-09-13
Philips Semiconductors
PHX18NQ20T
N-channel FET
Product specification
Rev. 01 -- 28 August 2000
10 of 15
9397 750 07452
Philips Electronics N.V. 2000. All rights reserved.
11. Revision history
Table 7:
Revision history
Rev Date
CPCN
Description
01
20000828
-
Product specification.
Philips Semiconductors
PHX18NQ20T
N-channel FET
Product specification
Rev. 01 -- 28 August 2000
11 of 15
9397 750 07452
Philips Electronics N.V. 2000 All rights reserved.
12. Data sheet status
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
13. Definitions
Short-form specification -- The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition -- Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information -- Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
14. Disclaimers
Life support -- These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes -- Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design
and/or
performance.
Philips
Semiconductors
assumes
no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products
are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
Datasheet status
Product status
Definition
[1]
Objective specification
Development
This data sheet contains the design target or goal specifications for product development. Specification may
change in any manner without notice.
Preliminary specification
Qualification
This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips
Semiconductors reserves the right to make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any
time without notice in order to improve design and supply the best possible product.
Philips Semiconductors
PHX18NQ20T
N-channel FET
Product specification
Rev. 01 -- 28 August 2000
12 of 15
9397 750 07452
Philips Electronics N.V. 2000. All rights reserved.
Philips Semiconductors
PHX18NQ20T
N-channel FET
Product specification
Rev. 01 -- 28 August 2000
13 of 15
9397 750 07452
Philips Electronics N.V. 2000. All rights reserved.
Philips Semiconductors
PHX18NQ20T
N-channel FET
Product specification
Rev. 01 -- 28 August 2000
14 of 15
9397 750 07452
Philips Electronics N.V. 2000. All rights reserved.
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(SCA70)
Philips Electronics N.V. 2000.
Printed in The Netherlands
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intellectual property rights.
Date of release: 28 August 2000
Document order number: 9397 750 07452
Contents
Philips Semiconductors
PHX18NQ20T
N-channel FET
1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
3
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
4
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
5
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
6
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
7
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
7.1
Transient thermal impedance . . . . . . . . . . . . . . 4
8
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
9
Isolation characteristics . . . . . . . . . . . . . . . . . . 8
10
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
14
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11