Document Outline
- FEATURES
- APPLICATIONS
- DESCRIPTION
- MARKING
- PINNING
- LIMITING VALUES
- ELECTRICAL CHARACTERISTICS
- THERMAL CHARACTERISTICS
- GRAPHICAL DATA
- PACKAGE OUTLINE
- DEFINITIONS
- LIFE SUPPORT APPLICATIONS
DATA SHEET
Product specification
Supersedes data of April 1996
1996 Sep 18
DISCRETE SEMICONDUCTORS
PMBD2835; PMBD2836
High-speed double diodes
book, halfpage
M3D088
1996 Sep 18
2
Philips Semiconductors
Product specification
High-speed double diodes
PMBD2835; PMBD2836
FEATURES
Small plastic SMD package
High switching speed: max. 4 ns
Continuous reverse voltage:
max. 35 V and 75 V respectively
Repetitive peak reverse voltage:
max. 85 V
Repetitive peak forward current:
max. 450 mA.
APPLICATIONS
High-speed switching in e.g.
surface mounted circuits.
DESCRIPTION
The PMD2835, PMD2836 consist of
two high-speed switching diodes with
common anodes, fabricated in planar
technology, and encapsulated in
small plastic SMD SOT23 packages.
MARKING
TYPE NUMBER
MARKING
CODE
PMBD2835
pA3
PMBD2836
pA2
PINNING
PIN
DESCRIPTION
1
cathode (k1)
2
cathode (k2)
3
common anode
Fig.1 Simplified outline (SOT23) and symbol.
handbook, 4 columns
2
1
3
MAM206
Top view
2
1
3
1996 Sep 18
3
Philips Semiconductors
Product specification
High-speed double diodes
PMBD2835; PMBD2836
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
V
RRM
repetitive peak reverse voltage
PMBD2835
-
85
V
PMBD2836
-
85
V
V
R
continuous reverse voltage
PMBD2835
-
35
V
PMBD2836
-
75
V
I
F
continuous forward current
single diode loaded; see Fig.2;
note 1
-
215
mA
double diode loaded; see Fig.2;
note 1
-
125
mA
I
FRM
repetitive peak forward current
450
mA
I
FSM
non-repetitive peak forward current
square wave; T
j
= 25
C prior to
surge; see Fig.4
t = 1
s
-
4
A
t = 1 ms
-
1
A
t = 1 s
-
0.5
A
P
tot
total power dissipation
T
amb
= 25
C; note 1
-
250
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
1996 Sep 18
4
Philips Semiconductors
Product specification
High-speed double diodes
PMBD2835; PMBD2836
ELECTRICAL CHARACTERISTICS
T
j
= 25
C; unless otherwise specified.
THERMAL CHARACTERISTICS
Note
1. Device mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
V
F
forward voltage
see Fig.3
I
F
= 1 mA
-
715
mV
I
F
= 10 mA
-
855
mV
I
F
= 50 mA
-
1
V
I
F
= 150 mA
-
1.25
V
I
R
reverse current
see Fig.5
PMBD2835
V
R
= 30 V
-
100
nA
V
R
= 30 V; T
j
= 150
C;
-
40
A
PMBD2836
V
R
= 50 V
-
100
nA
V
R
= 50 V; T
j
= 150
C
-
50
A
C
d
diode capacitance
f = 1 MHz; V
R
= 0; see Fig.6
-
2.5
pF
t
rr
reverse recovery time
when switched from I
F
= 10 mA to
I
R
= 10 mA; R
L
= 100
;
measured at I
R
= 1 mA; see Fig.7
-
4
ns
V
fr
forward recovery voltage
when switched from I
F
= 10 mA;
t
r
= 20 ns; see Fig.8
-
1.75
V
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-tp
thermal resistance from junction to tie-point
360
K/W
R
th j-a
thermal resistance from junction to ambient
note 1
500
K/W
1996 Sep 18
5
Philips Semiconductors
Product specification
High-speed double diodes
PMBD2835; PMBD2836
GRAPHICAL DATA
Device mounted on an FR4 printed-circuit board.
Fig.2
Maximum permissible continuous forward
current as a function of ambient
temperature.
0
200
300
0
100
200
MBD033
100
I F
(mA)
T ( C)
amb
o
single diode loaded
double diode loaded
(1) T
j
= 150
C; typical values.
(2) T
j
= 25
C; typical values.
(3) T
j
= 25
C; maximum values.
handbook, halfpage
0
2
300
IF
(mA)
0
100
200
MBG382
1
VF (V)
(1)
(3)
(2)
Fig.3
Forward current as a function of forward
voltage.
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
Based on square wave currents.
T
j
= 25
C prior to surge.
handbook, full pagewidth
MBG704
10
tp (
s)
1
IFSM
(A)
10
2
10
-
1
10
4
10
2
10
3
10
1
1996 Sep 18
6
Philips Semiconductors
Product specification
High-speed double diodes
PMBD2835; PMBD2836
Fig.5
Reverse current as a function of junction
temperature.
handbook, halfpage
10
5
10
4
10
200
0
MBG375
100
IR
(nA)
10
3
10
2
(1)
(2)
(3)
Tj (
o
C)
(1) V
R
= 50 V; maximum values.
(2) V
R
= 50 V; typical values.
(3) V
R
= 30 V; typical values.
Fig.6
Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; T
j
= 25
C.
handbook, halfpage
0
25
VR (V)
2.5
0
0.5
MBH191
1.0
1.5
2.0
5
Cd
(pF)
10
15
20
1996 Sep 18
7
Philips Semiconductors
Product specification
High-speed double diodes
PMBD2835; PMBD2836
Fig.7 Reverse recovery voltage test circuit and waveforms.
(1) I
R
= 1 mA.
handbook, full pagewidth
t rr
(1)
I F
t
output signal
t r
t
t p
10%
90%
VR
input signal
V = V I x R
R
F
S
R = 50
S
IF
D.U.T.
R = 50
i
SAMPLING
OSCILLOSCOPE
MGA881
Fig.8 Forward recovery voltage test circuit and waveforms.
t r
t
t p
10%
90%
I
input
signal
R = 50
S
I
R = 50
i
OSCILLOSCOPE
1 k
450
D.U.T.
MGA882
V fr
t
output
signal
V
1996 Sep 18
8
Philips Semiconductors
Product specification
High-speed double diodes
PMBD2835; PMBD2836
PACKAGE OUTLINE
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Fig.9 SOT23.
Dimensions in mm.
handbook, full pagewidth
MBC846
10
max
o
10
max
o
30
max
o
1.1
max
0.55
0.45
0.150
0.090
0.1
max
2
1
3
M
0.1
A B
0.48
0.38
TOP VIEW
1.4
1.2
2.5
max
3.0
2.8
M
0.2
A
A
B
0.95
1.9
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