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Электронный компонент: PMBTH10

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DATA SHEET
Product specification
File under Discrete Semiconductors, SC14
September 1995
DISCRETE SEMICONDUCTORS
PMBTH10
NPN 1 GHz general purpose
switching transistor
September 1995
2
Philips Semiconductors
Product specification
NPN 1 GHz general purpose switching transistor
PMBTH10
FEATURES
Low cost
High power gain.
DESCRIPTION
The PMBTH10 is a general purpose
silicon npn transistor, encapsulated in
a SOT23 plastic envelope. Its pnp
complement is the PMBTH81.
PINNING
PIN
DESCRIPTION
Code: V30
1
base
2
emitter
3
collector
Fig.1 SOT23.
fpage
MSB003
Top view
1
2
3
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1. T
s
is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
30
V
V
CEO
collector-emitter voltage
open base
-
25
V
V
EBO
emitter-base voltage
open collector
-
3
V
P
tot
total power dissipation
T
s
= 45
C (note 1)
-
400
mW
h
FE
DC current gain
V
CE
= 10 V; I
C
= 4 mA
60
-
C
re
collector-emitter feedback
capacitance
V
CB
= 10 V; I
E
= 0; f = 1 MHz
-
0.7
pF
C
rb
collector-base feedback
capacitance
V
CB
= 10 V; I
E
= 0; f = 1 MHz
0.35
0.65
pF
f
T
transition frequency
V
CE
= 10 V; I
C
= 4 mA;
f = 100 MHz; T
amb
= 25
C
650
-
MHz
r
b
C
c
collector-base time constant
V
CE
= 10 V; I
C
= 4 mA;
f = 100 MHz; T
amb
= 25
C
-
9
ps
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
-
30
V
V
CEO
collector-emitter voltage
open base
-
25
V
V
EBO
emitter-base voltage
open collector
-
3
V
I
C
DC collector current
-
40
mA
P
tot
total power dissipation
T
s
= 45
C (note 1)
-
400
mW
T
stg
storage temperature
-
65
150
C
T
j
junction temperature
-
150
C
September 1995
3
Philips Semiconductors
Product specification
NPN 1 GHz general purpose switching transistor
PMBTH10
THERMAL RESISTANCE
Note
1. T
s
is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
T
j
= 25
C.
SYMBOL
PARAMETER
THERMAL RESISTANCE
R
th j-s
from junction to soldering point (note 1)
260 K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
(BR)CBO
collector-base breakdown voltage
open emitter; I
C
= 100
A; I
E
= 0
30
-
V
V
(BR)CEO
collector-emitter breakdown voltage
open base; I
C
= 1 mA; I
B
= 0
25
-
V
V
(BR)EBO
emitter-base breakdown voltage
open collector; I
E
= 10
A; I
C
= 0
3
-
V
V
CE sat
collector-emitter saturation voltage
I
C
= 4 mA; I
B
= 0.4 mA
-
0.5
V
V
BE on
base-emitter ON voltage
V
CE
= 10 V; I
C
= 4 mA
-
0.95
V
I
CBO
collector-base cut-off current
V
CB
= 25 V; I
E
= 0
-
100
nA
I
EBO
emitter-base cut-off current
V
CB
= 25 V; I
C
= 0
-
100
nA
h
FE
DC current gain
V
CE
= 10 V; I
C
= 4 mA
60
-
C
re
collector-emitter feedback
capacitance
V
CB
= 10 V; I
E
= i
e
= 0;
f = 1 MHz
-
0.7
pF
C
rb
collector-base feedback capacitance
V
CB
= 10 V; I
C
= i
c
= 0;
f = 1 MHz
0.35
0.65
pF
f
T
transition frequency
V
CE
= 10 V; I
C
= 4 mA;
f = 100 MHz; T
amb
= 25
C
650
-
MHz
r
b
C
c
collector-base time constant
V
CB
= 10 V; I
C
= 4 mA;
f = 100 MHz; T
amb
= 25
C
-
9
ps
September 1995
4
Philips Semiconductors
Product specification
NPN 1 GHz general purpose switching transistor
PMBTH10
Fig.2
Common base input admittance (Y
11
) as a
function of frequency.
V
CB
= 10 V; I
C
= 4 mA.
handbook, halfpage
0
100
20
40
Y11
(mS)
f (MHz)
60
80
MRA168
10
2
g11
-
b11
10
3
Fig.3 Common base input admittance (Y
11
).
V
CB
= 10 V; I
C
= 4 mA.
handbook, halfpage
0
100
-
10
-
60
-
50
-
40
-
30
-
20
20
40
60
80
g11 (mS)
b11
(mS)
MRA170
1000 MHz
700
400
200 100
Fig.4
Common base forward transfer admittance
(Y
21
) as a function of frequency.
V
CB
= 10 V; I
C
= 4 mA.
handbook, halfpage
-
30
70
-
10
10
Y21
(mS)
f (MHz)
30
50
MRA169
10
2
10
3
b21
-
g21
Fig.5
Common base forward transfer admittance
(Y
21
).
V
CB
= 10 V; I
C
= 4 mA.
handbook, halfpage
-
70
30
60
10
20
30
40
50
-
50
-
30
-
10
10
g21 (mS)
b21
(mS)
MRA171
1000 MHz
700
400
200
100
600
September 1995
5
Philips Semiconductors
Product specification
NPN 1 GHz general purpose switching transistor
PMBTH10
Fig.6
Common base reverse transfer admittance
(Y
12
) as a function of frequency.
V
CB
= 10 V; I
C
= 4 mA.
handbook, halfpage
0
5
1
2
Y12
(mS)
f (MHz)
3
4
MRA164
10
2
-
b12
g12
10
3
Fig.7
Common base reverse transfer admittance
(Y
12
).
V
CB
= 10 V; I
C
= 4 mA.
handbook, halfpage
-
2
2
0
-
5
-
4
-
3
-
2
-
1
-
1.2
-
0.4
0.4
1.2
g12 (mS)
b12
(mS)
MRA166
1000 MHz
100
200
400
700
Fig.8
Common base reverse admittance (Y
22
) as
a function of frequency.
V
CB
= 10 V; I
C
= 4 mA.
handbook, halfpage
0
10
2
4
Y22
(mS)
f (MHz)
6
8
MRA165
10
2
10
3
b22
g22
Fig.9 Common base reverse admittance (Y
22
).
V
CB
= 10 V; I
C
= 4 mA.
handbook, halfpage
0
10
10
0
2
4
6
8
2
4
6
8
g22 (mS)
b22
(mS)
MRA167
100 MHz
700 MHz
400 MHz
200 MHz
1000 MHz
September 1995
6
Philips Semiconductors
Product specification
NPN 1 GHz general purpose switching transistor
PMBTH10
PACKAGE OUTLINE
UNIT
A
1
max.
b
p
c
D
E
e
1
H
E
L
p
Q
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
IEC
JEDEC
EIAJ
mm
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
0.95
e
1.9
2.5
2.1
0.55
0.45
0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
w
M
v
M
A
B
A
B
0
1
2 mm
scale
A
1.1
0.9
c
X
1
2
3
Plastic surface mounted package; 3 leads
SOT23
September 1995
7
Philips Semiconductors
Product specification
NPN 1 GHz general purpose switching transistor
PMBTH10
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.