Document Outline
- FEATURES
- APPLICATIONS
- DESCRIPTION
- QUICK REFERENCE DATA
- PINNING
- MARKING
- RELATED PRODUCTS
- LIMITING VALUES
- THERMAL CHARACTERISTICS
- ELECTRICAL CHARACTERISTICS
- GRAPHICAL DATA
- PACKAGE OUTLINE
- DATA SHEET STATUS
- DEFINITIONS
- DISCLAIMERS
DATA SHEET
Product specification
2003 Aug 20
DISCRETE SEMICONDUCTORS
PMEG2005AEA; PMEG3005AEA;
PMEG4005AEA
Very low V
F
MEGA Schottky barrier
rectifiers
dbook, halfpage
M3D049
2003 Aug 20
2
Philips Semiconductors
Product specification
Very low V
F
MEGA
Schottky barrier rectifiers
PMEG2005AEA; PMEG3005AEA;
PMEG4005AEA
FEATURES
Very low forward voltage
High surge current
Very small plastic SMD package.
APPLICATIONS
Low voltage rectification
High efficiency DC/DC conversion
Voltage clamping
Inverse polarity protection
Low power consumption applications.
DESCRIPTION
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier rectifier with an integrated guard ring for
stress protection, encapsulated in a SOD323 (SC-76) very
small SMD plastic package.
PINNING
PIN
DESCRIPTION
1
cathode
2
anode
olumns
k
a
MAM283
Fig.1
Simplified outline (SOD323; SC-76) and
symbol.
The marking bar indicates the cathode.
1
2
QUICK REFERENCE DATA
SYMBOL
PARAMETER
MAX.
UNIT
I
F
forward current
0.5
A
V
R
reverse voltage
PMEG2005AEA
20
V
PMEG3005AEA
30
V
PMEG4005AEA
40
V
MARKING
RELATED PRODUCTS
TYPE NUMBER
MARKING CODE
PMEG2005AEA
E5
PMEG3005AEA
E4
PMEG4005AEA
E3
TYPE NUMBER
DESCRIPTION
FEATURE
PMEGxx05AEV
0.5 A; 20/30/40 V very low V
F
MEGA Schottky rectifier SOT666 package
PMEG2005EB
0.5 A; 20 V very low V
F
MEGA Schottky rectifier
smaller SOD523 (SC-79) package
PMEG2010EA
1 A; 20 V very low V
F
MEGA Schottky rectifier
higher forward current
2003 Aug 20
3
Philips Semiconductors
Product specification
Very low V
F
MEGA
Schottky barrier rectifiers
PMEG2005AEA; PMEG3005AEA;
PMEG4005AEA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Refer to SOD323 (SC-76) standard mounting conditions.
2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses
P
R
are a significant part of the total power losses. Nomograms for determination of the reverse power losses P
R
and
I
F(AV)
rating will be available on request.
THERMAL CHARACTERISTICS
Notes
1. Refer to SOD323 (SC-76) standard mounting conditions.
2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses
P
R
are a significant part of the total power losses. Nomograms for determination of the reverse power losses P
R
and
I
F(AV)
rating will be available on request.
3. Device mounted on an FR4 printed-circuit board with copper clad 10
10 mm.
4. Solder point of cathode tab.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
R
continuous reverse voltage
PMEG2005AEA
-
20
V
PMEG3005AEA
-
30
V
PMEG4005AEA
-
40
V
I
F
continuous forward current
note 1
-
0.5
A
I
FRM
repetitive peak forward current
t
p
1 ms;
0.5
-
3.5
A
I
FSM
non-repetitive peak forward current
t
p
= 8 ms; square wave
-
10
A
T
j
junction temperature
note 2
-
150
C
T
amb
operating ambient temperature
note 2
-
65
+150
C
T
stg
storage temperature
-
65
+150
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to
ambient
in free air; notes 1 and 2
450
K/W
in free air; notes 2 and 3
210
K/W
R
th j-s
thermal resistance from junction to
soldering point
note 4
90
K/W
2003 Aug 20
4
Philips Semiconductors
Product specification
Very low V
F
MEGA
Schottky barrier rectifiers
PMEG2005AEA; PMEG3005AEA;
PMEG4005AEA
ELECTRICAL CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
Note
1. Pulse test: t
p
300
s;
0.02.
SYMBOL
PARAMETER
CONDITIONS
PMEG2005AEA PMEG3005AEA PMEG4005AEA
UNIT
TYP.
MAX.
TYP.
MAX.
TYP.
MAX.
V
F
forward voltage
I
F
= 0.1 mA
90
130
90
130
95
130
mV
I
F
= 1 mA
150
190
150
200
155
210
mV
I
F
= 10 mA
210
240
215
250
220
270
mV
I
F
= 100 mA
280
330
285
340
295
350
mV
I
F
= 500 mA
355
390
380
430
420
470
mV
I
R
continuous reverse
current
V
R
= 10 V; note 1
15
40
12
30
7
20
A
V
R
= 20 V; note 1
40
200
-
-
-
-
A
V
R
= 30 V; note 1
-
-
40
150
-
-
A
V
R
= 40 V; note 1
-
-
-
-
30
100
A
C
d
diode capacitance
V
R
= 1 V; f = 1 MHz
66
80
55
70
43
50
pF
2003 Aug 20
5
Philips Semiconductors
Product specification
Very low V
F
MEGA
Schottky barrier rectifiers
PMEG2005AEA; PMEG3005AEA;
PMEG4005AEA
GRAPHICAL DATA
handbook, halfpage
0.6
0.4
0.2
10
3
10
2
1
10
-
1
MDB675
VF (V)
(1)
(2)
(3)
0
10
IF
(mA)
Fig.2
Forward current as a function of forward
voltage; typical values.
PMEG2005AEA
(1) T
amb
= 150
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
handbook, halfpage
0
10
5
15
20
VR (V)
MDB676
10
5
10
4
10
3
10
2
10
1
IR
(
A)
(1)
(2)
(3)
Fig.3
Reverse current as a function of reverse
voltage; typical values.
PMEG2005AEA
(1) T
amb
= 150
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
handbook, halfpage
0
10
5
15
20
VR (V)
Cd
(pF)
0
150
100
50
MDB677
Fig.4
Diode capacitance as a function of reverse
voltage; typical values.
PMEG2005AEA
f = 1 MHz; T
amb
= 25
C.
2003 Aug 20
6
Philips Semiconductors
Product specification
Very low V
F
MEGA
Schottky barrier rectifiers
PMEG2005AEA; PMEG3005AEA;
PMEG4005AEA
handbook, halfpage
0.6
0.4
0.2
10
3
10
2
1
10
-
1
MDB672
VF (V)
(1)
(2)
(3)
0
10
IF
(mA)
Fig.5
Forward current as a function of forward
voltage; typical values.
PMEG3005AEA
(1) T
amb
= 150
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
handbook, halfpage
30
20
10
0
MDB673
10
5
10
4
10
3
10
2
10
1
IR
(
A)
VR (V)
(1)
(2)
(3)
Fig.6
Reverse current as a function of reverse
voltage; typical values.
PMEG3005AEA
(1) T
amb
= 150
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
handbook, halfpage
0
5
10
20
120
0
40
80
15
MDB674
Cd
(pF)
VR (V)
Fig.7
Diode capacitance as a function of reverse
voltage; typical values.
PMEG3005AEA
f = 1 MHz; T
amb
= 25
C.
2003 Aug 20
7
Philips Semiconductors
Product specification
Very low V
F
MEGA
Schottky barrier rectifiers
PMEG2005AEA; PMEG3005AEA;
PMEG4005AEA
handbook, halfpage
0.6
0.4
0.2
0
10
3
10
2
10
1
10
-
1
MDB669
IF
(mA)
VF (V)
(1)
(2)
(3)
Fig.8
Forward current as a function of forward
voltage; typical values.
PMEG4005AEA
(1) T
amb
= 150
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
handbook, halfpage
0
20
10
30
40
VR (V)
MDB670
10
5
10
4
10
3
10
2
10
1
IR
(
A)
(1)
(2)
(3)
Fig.9
Reverse current as a function of reverse
voltage; typical values.
PMEG4005AEA
(1) T
amb
= 150
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
handbook, halfpage
0
5
10
20
100
0
80
15
60
40
20
MDB671
VR (V)
Cd
(pF)
Fig.10 Diode capacitance as a function of reverse
voltage; typical values.
PMEG4005AEA
f = 1 MHz; T
amb
= 25
C.
2003 Aug 20
8
Philips Semiconductors
Product specification
Very low V
F
MEGA
Schottky barrier rectifiers
PMEG2005AEA; PMEG3005AEA;
PMEG4005AEA
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOD323
SC-76
98-09-14
99-09-13
0
1
2 mm
scale
SOD323
UNIT
bp
c
D
E
Q
v
mm
0.40
0.25
+
0.05
-
0.05
0.25
0.10
0.2
1.35
1.15
1.8
1.6
A
1.1
0.8
HE
2.7
2.3
0.25
0.15
Lp
0.45
0.15
DIMENSIONS (mm are the original dimensions)
D
1
2
HE
Lp
A
E
bp
A1
Q
Note
1. The marking bar indicates the cathode.
A1
max.
Plastic surface mounted package; 2 leads
v
M
A
A
c
(1)
2003 Aug 20
9
Philips Semiconductors
Product specification
Very low V
F
MEGA
Schottky barrier rectifiers
PMEG2005AEA; PMEG3005AEA;
PMEG4005AEA
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
LEVEL
DATA SHEET
STATUS
(1)
PRODUCT
STATUS
(2)(3)
DEFINITION
I
Objective data
Development
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
DEFINITIONS
Short-form specification
The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition
Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications
These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status `Production'), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
Koninklijke Philips Electronics N.V. 2003
SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Philips Semiconductors a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands
613514/01/pp
10
Date of release:
2003 Aug 20
Document order number:
9397 750 11615
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