DATA SHEET
Product specification
Supersedes data of 2004 Apr 02
2004 Jun 14
DISCRETE SEMICONDUCTORS
PMEGXX10BEA;
PMEGXX10BEV
1 A very low V
F
MEGA Schottky
barrier rectifier
2004 Jun 14
2
Philips Semiconductors
Product specification
1 A very low V
F
MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
FEATURES
Forward current: 1 A
Reverse voltages: 20 V, 30 V, 40 V
Very low forward voltage
Ultra small and very small plastic SMD package
Power dissipation comparable to SOT23.
APPLICATIONS
High efficiency DC-to-DC conversion
Voltage clamping
Protection circuits
Low voltage rectification
Blocking diodes
Low power consumption applications.
DESCRIPTION
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier rectifier with an integrated guard ring for
stress protection, encapsulated in a very small SOD323
(SC-76) and ultra small SOT666 SMD plastic package.
MARKING
QUICK REFERENCE DATA
PINNING
TYPE NUMBER
MARKING CODE
PMEG2010BEA
V1
PMEG3010BEA
V2
PMEG4010BEA
V3
PMEG2010BEV
G6
PMEG3010BEV
G5
PMEG4010BEV
G4
SYMBOL
PARAMETER
MAX.
UNIT
I
F
forward current
1
A
V
R
reverse voltage
20; 30; 40
V
PIN
DESCRIPTION
PMEGXX10BEA (see Fig.1)
1
cathode
2
anode
PMEGXX10BEV (see Fig.2)
1, 2, 5, 6
cathode
3, 4
anode
sym001
1
2
Top view
2
1
Fig.1
Simplified outline (SOD323; SC-76) and
symbol.
The marking bar indicates the cathode.
1
2
3
4
6
5
Top view
sym038
1, 2
5, 6
3, 4
Fig.2 Simplified outline (SOT666) and symbol.
2004 Jun 14
3
Philips Semiconductors
Product specification
1 A very low V
F
MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Refer to SOD323 (SC-76) and SOT666 standard mounting conditions.
2. Only valid if pins 3 and 4 are connected in parallel (SOT666 package).
3. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses
P
R
are a significant part of the total power losses. Nomograms for determining the reverse power losses P
R
and I
F(AV)
rating will be available on request.
TYPE NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
PMEGXX10BEA
-
plastic surface mounted package; 2 leads
SOD323
PMEGXX10BEV
plastic surface mounted package; 6 leads
SOT666
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
R
continuous reverse voltage
PMEG2010BEA/PMEG2010BEV
-
20
V
PMEG3010BEA/PMEG3010BEV
-
30
V
PMEG4010BEA/PMEG4010BEV
-
40
V
I
F
continuous forward current
T
s
55
C; note 1
-
1
A
I
FRM
repetitive peak forward current
t
p
1 ms;
0.5; note 2
-
3.5
A
I
FSM
non-repetitive peak forward current
t
p
= 8 ms; square wave;
note 2
-
10
A
T
j
junction temperature
note 3
-
150
C
T
amb
operating ambient temperature
note 3
-
65
+150
C
T
stg
storage temperature
-
65
+150
C
2004 Jun 14
4
Philips Semiconductors
Product specification
1 A very low V
F
MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
THERMAL CHARACTERISTICS
Notes
1. Refer to SOD323 (SC-76) standard mounting conditions.
2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses
P
R
are a significant part of the total power losses. Nomograms for determining the reverse power losses P
R
and I
F(AV)
rating will be available on request.
3. Device mounted on an FR4 printed-circuit board with copper clad 10
10 mm.
4. Solder point of cathode tab.
5. Refer to SOT666 standard mounting conditions.
6. Only valid if pins 3 and 4 are connected in parallel (SOT666 package).
CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
Note
1. Pulse test: t
p
300
s;
0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
PMEGXX10BEA (SOD323)
R
th(j-a)
thermal resistance from junction to
ambient
in free air; notes 1 and 2
450
K/W
in free air; notes 2 and 3
210
K/W
R
th(j-s)
thermal resistance from junction to
soldering point
note 4
90
K/W
PMEGXX10BEV (SOT666)
R
th(j-a)
thermal resistance from junction to
ambient
in free air; notes 2 and 5
405
K/W
in free air; notes 2 and 6
215
K/W
R
th(j-s)
thermal resistance from junction to
soldering point
note 4
80
K/W
SYMBOL
PARAMETER
CONDITIONS
PMEG2010BEA/
PMEG2010BEV
PMEG3010BEA/
PMEG3010BEV
PMEG4010BEA/
PMEG4010BEV
UNIT
TYP.
MAX.
TYP.
MAX.
TYP.
MAX.
V
F
forward voltage
I
F
= 0.1 mA
90
130
90
130
95
130
mV
I
F
= 1 mA
150
190
150
200
155
210
mV
I
F
= 10 mA
210
240
215
250
220
270
mV
I
F
= 100 mA
280
330
285
340
295
350
mV
I
F
= 500 mA
355
390
380
430
420
470
mV
I
F
= 1000 mA
420
500
450
560
540
640
mV
I
R
continuous reverse
current
V
R
= 10 V; note 1
15
40
12
30
7
20
A
V
R
= 20 V; note 1
40
200
-
-
-
-
A
V
R
= 30 V; note 1
-
-
40
150
-
-
A
V
R
= 40 V; note 1
-
-
-
-
30
100
A
C
d
diode capacitance
V
R
= 1 V; f = 1 MHz
66
80
55
70
43
50
pF
2004 Jun 14
5
Philips Semiconductors
Product specification
1 A very low V
F
MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
GRAPHICAL DATA
handbook, halfpage
0.6
VF (V)
0.4
IF
(mA)
0.2
0
10
4
10
3
10
2
10
1
10
-
1
MHC673
(1)
(2)
(3)
Fig.3
Forward current as a function of forward
voltage; typical values.
PMEG2010BEA/PMEG2010BEV
(1) T
amb
= 150
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
handbook, halfpage
20
10
5
0
15
MHC674
10
5
10
4
10
3
10
2
10
1
VR (V)
IR
(
A)
(1)
(3)
(2)
Fig.4
Reverse current as a function of reverse
voltage; typical values.
PMEG2010BEA/PMEG2010BEV
(1) T
amb
= 150
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
handbook, halfpage
0
5
10
20
VR (V)
120
140
100
0
40
20
80
60
15
Cd
(pF)
MHC675
Fig.5
Diode capacitance as a function of reverse
voltage; typical values.
PMEG2010BEA/PMEG2010BEV
T
amb
= 25
C; f = 1 MHz.
handbook, halfpage
0.6
VF (V)
0.4
IF
(mA)
0.2
0
10
4
10
3
10
2
10
1
10
-
1
MHC676
(1)
(2)
(3)
Fig.6
Forward current as a function of forward
voltage; typical values.
PMEG3010BEA/PMEG3010BEV
(1) T
amb
= 150
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
2004 Jun 14
6
Philips Semiconductors
Product specification
1 A very low V
F
MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
30
VR (V)
10
5
0
20
25
15
IR
(
A)
10
5
10
4
10
3
10
2
10
1
MHC677
(1)
(3)
(2)
Fig.7
Reverse current as a function of reverse
voltage; typical values.
PMEG3010BEA/PMEG3010BEV
(1) T
amb
= 150
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
handbook, halfpage
0
5
10
20
VR (V)
120
100
0
40
20
80
60
15
Cd
(pF)
MHC678
Fig.8
Diode capacitance as a function of reverse
voltage; typical values.
PMEG3010BEA/PMEG3010BEV
T
amb
= 25
C; f = 1 MHz.
handbook, halfpage
0.6
VF (V)
0.4
IF
(mA)
0.2
0
10
4
10
3
10
2
10
1
10
-
1
MHC679
(1)
(2)
(3)
Fig.9
Forward current as a function of forward
voltage; typical values.
PMEG4010BEA/PMEG4010BEV
(1) T
amb
= 150
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
handbook, halfpage
40
20
10
0
30
MHC680
10
5
10
4
10
3
10
2
10
1
VR (V)
IR
(
A)
(1)
(3)
(2)
Fig.10 Reverse current as a function of reverse
voltage; typical values.
PMEG4010BEA/PMEG4010BEV
(1) T
amb
= 150
C.
(2) T
amb
= 85
C.
(3) T
amb
= 25
C.
2004 Jun 14
7
Philips Semiconductors
Product specification
1 A very low V
F
MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
handbook, halfpage
0
5
10
20
100
0
80
15
60
40
20
MHC681
VR (V)
Cd
(pF)
Fig.11 Diode capacitance as a function of reverse
voltage; typical values.
PMEG4010BEA/PMEG4010BEV
T
amb
= 25
C; f = 1 MHz.
2004 Jun 14
8
Philips Semiconductors
Product specification
1 A very low V
F
MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
PACKAGE OUTLINES
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
SOD323
SC-76
SOD323
99-09-13
03-12-17
Note
1. The marking bar indicates the cathode
UNIT
A
mm
0.05
1.1
0.8
0.40
0.25
0.25
0.10
1.8
1.6
1.35
1.15
2.7
2.3
0.45
0.15
A
1
max
DIMENSIONS (mm are the original dimensions)
Plastic surface mounted package; 2 leads
0
1
(1)
2
1
2 mm
scale
b
p
c
D
E
H
D
Q
0.25
0.15
L
p
v
0.2
A
D
A
E
L
p
b
p
detail X
A
1
c
Q
H
D
v
A
M
X
2004 Jun 14
9
Philips Semiconductors
Product specification
1 A very low V
F
MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
UNIT
b
p
c
D
E
e
1
H
E
L
p
w
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
01-01-04
01-08-27
IEC
JEDEC
EIAJ
mm
0.27
0.17
0.18
0.08
1.7
1.5
1.3
1.1
0.5
e
1.0
1.7
1.5
0.1
y
0.1
DIMENSIONS (mm are the original dimensions)
0.3
0.1
SOT666
bp
pin 1 index
D
e1
e
A
Lp
detail X
HE
E
A
S
0
1
2 mm
scale
A
0.6
0.5
c
X
1
2
3
4
5
6
Plastic surface mounted package; 6 leads
SOT666
Y S
w
M
A
2004 Jun 14
10
Philips Semiconductors
Product specification
1 A very low V
F
MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
LEVEL
DATA SHEET
STATUS
(1)
PRODUCT
STATUS
(2)(3)
DEFINITION
I
Objective data
Development
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
DEFINITIONS
Short-form specification
The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition
Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications
These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status `Production'), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no license or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
Koninklijke Philips Electronics N.V. 2004
SCA76
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
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Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands
R76/04/pp
11
Date of release:
2004 Jun 14
Document order number:
9397 750 13234
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