ChipFind - документация

Электронный компонент: PMEG4010EJ

Скачать:  PDF   ZIP

Document Outline

1.
Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers.
1.2 Features
1.3 Applications
1.4 Quick reference data
[1]
Pulse test: t
p
300
s;
0.02.
PMEGxx10EH/EJ series
1 A very low V
F
MEGA Schottky barrier rectifiers
Rev. 03 -- 11 April 2005
Product data sheet
Table 1:
Product overview
Type number
Package
Configuration
Philips
JEITA
PMEG2010EH
SOD123F
-
single diode
PMEG3010EH
PMEG4010EH
PMEG2010EJ
SOD323F
SC-90
single diode
PMEG3010EJ
PMEG4010EJ
s
Forward current:
1 A
s
Very low forward voltage
s
Low voltage rectification
s
Inverse polarity protection
s
High efficiency DC-to-DC conversion
s
Low power consumption applications
Table 2:
Quick reference data
Symbol Parameter
Conditions
Min
Typ
Max
Unit
I
F
forward current
T
sp
55
C
-
-
1
A
V
R
reverse voltage
PMEG2010EH, PMEG2010EJ
-
-
20
V
PMEG3010EH, PMEG3010EJ
-
-
30
V
PMEG4010EH, PMEG4010EJ
-
-
40
V
V
F
forward voltage
I
F
= 1000 mA
[1]
PMEG2010EH, PMEG2010EJ
-
420
500
mV
PMEG3010EH, PMEG3010EJ
-
450
560
mV
PMEG4010EH, PMEG4010EJ
-
540
640
mV
9397 750 14817
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 03 -- 11 April 2005
2 of 12
Philips Semiconductors
PMEGxx10EH/EJ series
1 A very low V
F
MEGA Schottky barrier rectifiers
2.
Pinning information
[1]
The marking bar indicates the cathode.
3.
Ordering information
4.
Marking
Table 3:
Pinning
Pin
Description
Simplified outline
Symbol
1
cathode
[1]
2
anode
001aab540
1
2
sym001
1
2
Table 4:
Ordering information
Type number
Package
Name
Description
Version
PMEG2010EH
-
plastic surface mounted package; 2 leads
SOD123F
PMEG3010EH
PMEG4010EH
PMEG2010EJ
SC-90
plastic surface mounted package; 2 leads
SOD323F
PMEG3010EJ
PMEG4010EJ
Table 5:
Marking codes
Type number
Marking code
PMEG2010EH
A9
PMEG3010EH
AA
PMEG4010EH
AB
PMEG2010EJ
AH
PMEG3010EJ
AK
PMEG4010EJ
AL
9397 750 14817
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 03 -- 11 April 2005
3 of 12
Philips Semiconductors
PMEGxx10EH/EJ series
1 A very low V
F
MEGA Schottky barrier rectifiers
5.
Limiting values
[1]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
6.
Thermal characteristics
[1]
Schottky barrier rectifier thermal run-away has to be considered, as in some applications the reverse power
losses P
R
are a significant part of the total power losses. Nomograms for determining the reverse power
losses P
R
and I
F(AV)
rating are available on request.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
Table 6:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
V
R
reverse voltage
PMEG2010EH, PMEG2010EJ
-
20
V
PMEG3010EH, PMEG3010EJ
-
30
V
PMEG4010EH, PMEG4010EJ
-
40
V
I
F
forward current
T
sp
55
C
-
1
A
I
FRM
repetitive peak forward current
t
p
1 ms;
0.25
-
7
A
I
FSM
non-repetitive peak forward current square wave;
t
p
= 8 ms
-
9
A
P
tot
total power dissipation
T
amb
25
C
SOD123F
[1]
-
375
mW
[2]
-
830
mW
SOD323F
[1]
-
350
mW
[2]
-
830
mW
T
j
junction temperature
-
150
C
T
amb
ambient temperature
-
65
+150
C
T
stg
storage temperature
-
65
+150
C
Table 7:
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
R
th(j-a)
thermal resistance from junction
to ambient
in free air
[1]
SOD123F
[2]
-
-
330
K/W
[3]
-
-
150
K/W
SOD323F
[2]
-
-
350
K/W
[3]
-
-
150
K/W
R
th(j-sp)
thermal resistance from junction
to solder point
SOD123F
-
-
60
K/W
SOD323F
-
-
55
K/W
9397 750 14817
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 03 -- 11 April 2005
4 of 12
Philips Semiconductors
PMEGxx10EH/EJ series
1 A very low V
F
MEGA Schottky barrier rectifiers
7.
Characteristics
[1]
Pulse test: t
p
300
s;
0.02.
Table 8:
Characteristics
T
amb
= 25
C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
V
F
forward voltage
[1]
PMEG2010EH, PMEG2010EJ
I
F
= 0.1 mA
-
90
130
mV
I
F
= 1 mA
-
150
190
mV
I
F
= 10 mA
-
210
240
mV
I
F
= 100 mA
-
280
330
mV
I
F
= 500 mA
-
355
390
mV
I
F
= 1000 mA
-
420
500
mV
PMEG3010EH, PMEG3010EJ
I
F
= 0.1 mA
-
90
130
mV
I
F
= 1 mA
-
150
200
mV
I
F
= 10 mA
-
215
250
mV
I
F
= 100 mA
-
285
340
mV
I
F
= 500 mA
-
380
430
mV
I
F
= 1000 mA
-
450
560
mV
PMEG4010EH, PMEG4010EJ
I
F
= 0.1 mA
-
95
130
mV
I
F
= 1 mA
-
155
210
mV
I
F
= 10 mA
-
220
270
mV
I
F
= 100 mA
-
295
350
mV
I
F
= 500 mA
-
420
470
mV
I
F
= 1000 mA
-
540
640
mV
I
R
reverse current
PMEG2010EH, PMEG2010EJ
V
R
= 10 V
-
15
40
A
V
R
= 20 V
-
40
200
A
PMEG3010EH, PMEG3010EJ
V
R
= 10 V
-
12
30
A
V
R
= 30 V
-
40
150
A
PMEG4010EH, PMEG4010EJ
V
R
= 10 V
-
7
20
A
V
R
= 40 V
-
30
100
A
C
d
diode capacitance
V
R
= 1 V;
f = 1 MHz
PMEG2010EH, PMEG2010EJ
-
66
80
pF
PMEG3010EH, PMEG3010EJ
-
55
70
pF
PMEG4010EH, PMEG4010EJ
-
43
50
pF
9397 750 14817
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 03 -- 11 April 2005
5 of 12
Philips Semiconductors
PMEGxx10EH/EJ series
1 A very low V
F
MEGA Schottky barrier rectifiers
(1) T
amb
= 150
C
(2) T
amb
= 125
C
(3) T
amb
= 85
C
(4) T
amb
= 25
C
(5) T
amb
=
-
40
C
(1) T
amb
= 150
C
(2) T
amb
= 125
C
(3) T
amb
= 85
C
(4) T
amb
= 25
C
(5) T
amb
=
-
40
C
Fig 1.
PMEG2010EH, PMEG2010EJ: Forward current
as a function of forward voltage; typical values
Fig 2.
PMEG2010EH, PMEG2010EJ: Reverse current
as a function of reverse voltage; typical values
T
amb
= 25
C; f = 1 MHz
Fig 3.
PMEG2010EH, PMEG2010EJ: Diode capacitance as a function of reverse voltage; typical values
006aaa247
1
10
-
1
10
2
10
10
3
I
F
(mA)
10
-
2
V
F
(V)
0
0.5
0.4
0.2
0.3
0.1
(1)
(2)
(3)
(4)
(5)
006aaa248
I
R
(
A)
1
10
-
2
10
-
1
10
4
10
3
10
2
10
10
5
10
-
3
V
R
(V)
0
20
16
8
12
4
(1)
(2)
(3)
(4)
(5)
V
R
(V)
0
20
16
8
12
4
006aaa249
40
80
120
C
d
(pF)
0
9397 750 14817
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 03 -- 11 April 2005
6 of 12
Philips Semiconductors
PMEGxx10EH/EJ series
1 A very low V
F
MEGA Schottky barrier rectifiers
(1) T
amb
= 150
C
(2) T
amb
= 125
C
(3) T
amb
= 85
C
(4) T
amb
= 25
C
(5) T
amb
=
-
40
C
(1) T
amb
= 150
C
(2) T
amb
= 125
C
(3) T
amb
= 85
C
(4) T
amb
= 25
C
(5) T
amb
=
-
40
C
Fig 4.
PMEG3010EH, PMEG3010EJ: Forward current
as a function of forward voltage; typical values
Fig 5.
PMEG3010EH, PMEG3010EJ: Reverse current
as a function of reverse voltage; typical values
T
amb
= 25
C; f = 1 MHz
Fig 6.
PMEG3010EH, PMEG3010EJ: Diode capacitance as a function of reverse voltage; typical values
006aaa250
1
10
-
1
10
2
10
10
3
I
F
(mA)
10
-
2
V
F
(V)
0
0.5
0.4
0.2
0.3
0.1
(1)
(2)
(3)
(4)
(5)
006aaa251
V
R
(V)
0
30
20
10
I
R
(
A)
1
10
-
2
10
-
1
10
4
10
3
10
2
10
10
5
10
-
3
(1)
(2)
(3)
(4)
(5)
V
R
(V)
0
30
20
10
006aaa252
40
80
120
C
d
(pF)
0
9397 750 14817
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 03 -- 11 April 2005
7 of 12
Philips Semiconductors
PMEGxx10EH/EJ series
1 A very low V
F
MEGA Schottky barrier rectifiers
(1) T
amb
= 150
C
(2) T
amb
= 125
C
(3) T
amb
= 85
C
(4) T
amb
= 25
C
(5) T
amb
=
-
40
C
(1) T
amb
= 150
C
(2) T
amb
= 125
C
(3) T
amb
= 85
C
(4) T
amb
= 25
C
(5) T
amb
=
-
40
C
Fig 7.
PMEG4010EH, PMEG4010EJ: Forward current
as a function of forward voltage; typical values
Fig 8.
PMEG4010EH, PMEG4010EJ: Reverse current
as a function of reverse voltage; typical values
T
amb
= 25
C; f = 1 MHz
Fig 9.
PMEG4010EH, PMEG4010EJ: Diode capacitance as a function of reverse voltage; typical values
006aaa253
V
F
(V)
0
0.6
0.4
0.2
0.5
0.3
0.1
1
10
-
1
10
2
10
10
3
I
F
(mA)
10
-
2
(1)
(2)
(3)
(4)
(5)
006aaa254
V
R
(V)
0
40
30
20
10
I
R
(
A)
1
10
-
2
10
-
1
10
4
10
3
10
2
10
10
5
10
-
3
(1)
(2)
(3)
(4)
(5)
V
R
(V)
0
40
30
10
20
006aaa255
40
60
20
80
100
C
d
(pF)
0
9397 750 14817
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 03 -- 11 April 2005
8 of 12
Philips Semiconductors
PMEGxx10EH/EJ series
1 A very low V
F
MEGA Schottky barrier rectifiers
8.
Package outline
9.
Packing information
[1]
For further information and the availability of packing methods, see
Section 15
.
Fig 10. Package outline SOD123F
Fig 11. Package outline SOD323F (SC-90)
04-11-29
Dimensions in mm
1.2
1.0
0.25
0.10
3.6
3.4
2.7
2.5
0.55
0.35
0.70
0.55
1.7
1.5
1
2
04-09-13
Dimensions in mm
0.80
0.65
0.25
0.10
0.5
0.3
2.7
2.3
1.8
1.6
0.40
0.25
1.35
1.15
1
2
Table 9:
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number
Package
Description
Packing quantity
3000
10000
PMEGxx10EH
SOD123F
4 mm pitch, 8 mm tape and reel
-115
-135
PMEGxx10EJ
SOD323F
9397 750 14817
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 03 -- 11 April 2005
9 of 12
Philips Semiconductors
PMEGxx10EH/EJ series
1 A very low V
F
MEGA Schottky barrier rectifiers
10. Soldering
Reflow soldering is the only recommended soldering method.
Dimensions in mm
Fig 12. Reflow soldering footprint SOD123F
Reflow soldering is the only recommended soldering method.
Dimensions in mm
Fig 13. Reflow soldering footprint SOD323F (SC-90)
1.6
1.6
2.9
4
4.4
1.1 1.2
2.1
1.1
(2
)
solder lands
solder resist
occupied area
solder paste
msa433
1.65
0.50
(2
)
2.10
1.60
2.80
0.60
3.05
0.50
0.95
solder lands
solder resist
occupied area
solder paste
9397 750 14817
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 03 -- 11 April 2005
10 of 12
Philips Semiconductors
PMEGxx10EH/EJ series
1 A very low V
F
MEGA Schottky barrier rectifiers
11. Revision history
Table 10:
Revision history
Document ID
Release date Data sheet status
Change notice Doc. number
Supersedes
PMEGXX10EH_EJ_
SER_3
20050411
Product data sheet
-
9397 750 14817 PMEGXX10EJ_SER_2
Modifications:
Types PMEG2010EH, PMEG3010EH, PMEG4010EH added
Table 6
P
tot
values for SOD323F added
PMEGXX10EJ_SER_2
20050131
Product data sheet
-
9397 750 14228 PMEGXX10EJ_SER_1
PMEGXX10EJ_SER_1
20040907
Objective data sheet -
9397 750 13596 -
Philips Semiconductors
PMEGxx10EH/EJ series
1 A very low V
F
MEGA Schottky barrier rectifiers
9397 750 14817
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 03 -- 11 April 2005
11 of 12
12. Data sheet status
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
13. Definitions
Short-form specification -- The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition -- Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information -- Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
14. Disclaimers
Life support -- These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes -- Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status `Production'),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
15. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
Level
Data sheet status
[1]
Product status
[2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 11 April 2005
Document number: 9397 750 14817
Published in The Netherlands
Philips Semiconductors
PMEGxx10EH/EJ series
1 A very low V
F
MEGA Schottky barrier rectifiers
16. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
3
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
4
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
7
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4
8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
9
Packing information. . . . . . . . . . . . . . . . . . . . . . 8
10
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10
12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
14
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
15
Contact information . . . . . . . . . . . . . . . . . . . . 11