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Электронный компонент: PMST4401

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DATA SHEET
Preliminary specification
Supersedes data of 1997 Jul 07
1999 Apr 26
DISCRETE SEMICONDUCTORS
BC846T; BC847T
NPN general purpose transistors
M3D173
1999 Apr 26
2
Philips Semiconductors
Preliminary specification
NPN general purpose transistors
BC846T; BC847T
FEATURES
Low current (max. 100 mA)
Low voltage (max. 65 V).
APPLICATIONS
General purpose switching and amplification, especially
in portable communication equipment
Electronic data processing (EDP) and consumer
applications.
DESCRIPTION
NPN transistor in an SC-75 plastic package.
PNP complements: BC856T and BC857T.
MARKING
TYPE
NUMBER
MARKING
CODE
TYPE
NUMBER
MARKING
CODE
BC846AT
1A
BC847BT
1F
BC846BT
1B
BC847CT
1G
BC847AT
1E
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
Fig.1 Simplified outline (SC-75) and symbol.
handbook, halfpage
MAM348
1
2
3
Top view
1
2
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
open emitter
BC846AT; BC846BT
-
80
V
BC847AT; BC847BT; BC847CT
-
50
V
V
CEO
collector-emitter voltage
open base
BC846AT; BC846BT
-
65
V
BC847AT; BC847BT; BC847CT
-
45
V
V
EBO
emitter-base voltage
open collector
-
5
V
I
C
collector current (DC)
-
100
mA
I
CM
peak collector current
-
200
mA
I
BM
peak base current
-
100
mA
P
tot
total power dissipation
T
amb
25
C; note 1
-
150
mW
T
stg
storage temperature
-
65
+150
C
T
j
junction temperature
-
150
C
T
amb
operating ambient temperature
-
65
+150
C
1999 Apr 26
3
Philips Semiconductors
Preliminary specification
NPN general purpose transistors
BC846T; BC847T
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
Note
1. Pulse test: t
p
300
s;
0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
833
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector cut-off current
I
E
= 0; V
CB
= 30 V
-
-
15
nA
I
E
= 0; V
CB
= 30 V; T
j
= 150
C
-
-
5
A
I
EBO
emitter cut-off current
I
C
= 0; V
EB
= 5 V
-
-
100
nA
h
FE
DC current gain
I
C
= 2 mA; V
CE
= 5 V
BC846AT; BC847AT
110
-
220
BC846BT; BC847BT
200
-
450
BC847CT
420
-
800
V
CEsat
collector-emitter saturation
voltage
I
C
= 10 mA; I
B
= 0.5 mA
-
-
200
mV
I
C
= 100 mA; I
B
= 5 mA; note 1
-
-
400
mV
V
BE
base-emitter voltage
I
C
= 2 mA; V
CE
= 5 V
580
-
700
mV
I
C
= 10 mA; V
CE
= 5 V
-
-
770
mV
C
c
collector capacitance
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
-
-
1.5
pF
C
e
emitter capacitance
I
C
= i
c
= 0; V
EB
= 500 mV; f = 1 MHz
-
11
-
pF
f
T
transition frequency
I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz
100
-
-
MHz
F
noise figure
I
C
= 200
A; V
CE
= 5 V; R
S
= 2 k
;
f = 1 kHz; B = 200 Hz
-
-
10
dB
1999 Apr 26
4
Philips Semiconductors
Preliminary specification
NPN general purpose transistors
BC846T; BC847T
handbook, full pagewidth
0
250
50
100
150
200
MBH723
10
-
2
10
-
1
hFE
1
IC (mA)
10
10
3
10
2
VCE = 5 V
Fig.2 DC current gain; typical values.
BC846AT; BC847AT.
handbook, full pagewidth
0
300
100
200
MBH724
10
-
2
10
-
1
hFE
1
IC (mA)
10
10
3
10
2
VCE = 5 V
Fig.3 DC current gain; typical values.
BC846BT; BC847BT.
1999 Apr 26
5
Philips Semiconductors
Preliminary specification
NPN general purpose transistors
BC846T; BC847T
handbook, full pagewidth
0
600
200
400
MBH725
10
-
2
10
-
1
hFE
1
IC (mA)
10
10
3
10
2
VCE = 5 V
Fig.4 DC current gain; typical values.
BC847CT.
1999 Apr 26
6
Philips Semiconductors
Preliminary specification
NPN general purpose transistors
BC846T; BC847T
PACKAGE OUTLINE
UNIT
A1
max
bp
c
D
E
e
1
H
E
L
p
Q
w
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
0.1
0.30
0.15
0.25
0.10
1.8
1.4
0.9
0.7
0.5
e
1
1.75
1.45
0.2
v
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
0.23
0.13
SOT416
SC-75
w
M
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
A
B
B
v
M
A
0
0.5
1 mm
scale
A
0.95
0.60
c
X
1
2
3
Plastic surface mounted package; 3 leads
SOT416
97-02-28
1999 Apr 26
7
Philips Semiconductors
Preliminary specification
NPN general purpose transistors
BC846T; BC847T
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Internet: http://www.semiconductors.philips.com
Philips Semiconductors a worldwide company
Philips Electronics N.V. 1999
SCA63
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Printed in The Netherlands
115002/00/02/pp8
Date of release: 1999 Apr 26
Document order number:
9397 750 05803