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Электронный компонент: PRLL5819

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DATA SHEET
Product specification
Supersedes data of 1996 May 03
1999 Apr 22
DISCRETE SEMICONDUCTORS
PRLL5817; PRLL5818; PRLL5819
Schottky barrier diodes
fpage
M3D121
1999 Apr 22
2
Philips Semiconductors
Product specification
Schottky barrier diodes
PRLL5817; PRLL5818; PRLL5819
FEATURES
Low switching losses
Fast recovery time
Guard ring protected
Hermetically sealed glass SMD
package.
APPLICATIONS
Low power, switched-mode power
supplies
Rectifying
Polarity protection.
DESCRIPTION
The PRLL5817 to PRLL5819 types
are Schottky barrier diodes fabricated
in planar technology, and
encapsulated in SOD87 hermetically
sealed glass SMD packages
incorporating Implotec
TM(1)
technology.
(1) Implotec is a trademark of Philips.
MARKING
TYPE NUMBER
MARKING CODE
PRLL5817
9
PRLL5818
9
PRLL5819
9
Fig.1 Simplified outline (SOD87) and symbol.
handbook, halfpage
MAM190
k
a
1999 Apr 22
3
Philips Semiconductors
Product specification
Schottky barrier diodes
PRLL5817; PRLL5818; PRLL5819
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
R
continuous reverse voltage
PRLL5817
-
20
V
PRLL5818
-
30
V
PRLL5819
-
40
V
V
RSM
non-repetitive peak reverse voltage
PRLL5817
-
24
V
PRLL5818
-
36
V
PRLL5819
-
48
V
V
RRM
repetitive peak reverse voltage
PRLL5817
-
20
V
PRLL5818
-
30
V
PRLL5819
-
40
V
V
RWM
crest working reverse voltage
PRLL5817
-
20
V
PRLL5818
-
30
V
PRLL5819
-
40
V
I
F(AV)
average forward current
T
amb
= 60
C
-
1
A
I
FSM
non-repetitive peak forward current
t = 10 ms half sine wave;
T
j
= T
j max
prior to surge: V
R
= 0
-
25
A
T
stg
storage temperature
-
65
+175
C
T
j
junction temperature
-
125
C
1999 Apr 22
4
Philips Semiconductors
Product specification
Schottky barrier diodes
PRLL5817; PRLL5818; PRLL5819
ELECTRICAL CHARACTERISTICS
T
amb
= 25
C unless otherwise specified.
Note
1. Pulse test: t
p
= 300
s;
= 0.02.
THERMAL CHARACTERISTICS
Note
1. Refer to SOD87 standard mounting conditions.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
F
forward voltage
see Fig.2
PRLL5817
I
F
= 0.1 A
-
-
320
mV
I
F
= 1 A
-
-
450
mV
I
F
= 3 A
-
-
750
mV
V
F
forward voltage
see Fig.2
PRLL5818
I
F
= 0.1 A
-
-
330
mV
I
F
= 1 A
-
-
550
mV
I
F
= 3 A
-
-
875
mV
V
F
forward voltage
see Fig.2
PRLL5819
I
F
= 0.1 A
-
-
340
mV
I
F
= 1 A
-
-
600
mV
I
F
= 3 A
-
-
900
mV
I
R
reverse current
V
R
= V
RRMmax
; note 1
-
0.5
1
mA
V
R
= V
RRMmax
; T
j
= 100
C
-
5
10
mA
C
d
diode capacitance
V
R
= 4 V; f = 1 MHz
PRLL5817
-
70
-
pF
PRLL5818
-
50
-
pF
PRLL5819
-
50
-
pF
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
note 1
150
K/W
1999 Apr 22
5
Philips Semiconductors
Product specification
Schottky barrier diodes
PRLL5817; PRLL5818; PRLL5819
GRAPHICAL DATA
handbook, halfpage
0
1
5
0
1
MBE634
2
3
4
0.5
VF (V)
IF
(A)
Tj = 125
oC
25 oC
Fig.2 Typical forward voltage.
Fig.3
PRLL817. Maximum values steady state forward power dissipation as a function of the average forward
current; a = I
F(RMS)
/I
F(AV).
2
1
0
0
0.5
1.5
MBE642
1
(W)
0.5
PF(AV)
IF(AV) (A)
a = 3
2.5
1.57
1.42
1
2
1999 Apr 22
6
Philips Semiconductors
Product specification
Schottky barrier diodes
PRLL5817; PRLL5818; PRLL5819
Fig.4
PRLL5818. Maximum values steady state forward power dissipation as a function of the average forward
current; a = I
F(RMS)
/I
F(AV).
2
1
0
0
0.5
1.5
MBE641
1
(W)
0.5
PF(AV)
IF(AV) (A)
a = 3
2.5
1.57
1.42
1
2
Fig.5
PRLL5819. Maximum values steady state forward power dissipation as a function of the average forward
current; a = I
F(RMS)
/I
F(AV).
2
1
0
0
0.5
1.5
MBE643
1
(W)
0.5
PF(AV)
IF(AV) (A)
a = 3
2.5
1.57
1.42
1
2
1999 Apr 22
7
Philips Semiconductors
Product specification
Schottky barrier diodes
PRLL5817; PRLL5818; PRLL5819
Fig.6
PRLL5817. Maximum permissible junction
temperature as a function of reverse voltage;
device mounted; refer to SOD87 standard
mounting conditions.
0
20
200
0
MBE635
100
10
VR (V)
Tj
(oC)
VRWM
VR
= 0.2
= 0.5
Fig.7
PRLL5817. Reverse power dissipation as a
function of reverse voltage (max. values);
device mounted; refer to SOD87 standard
mounting conditions.
0
20
0.1
0
MBE640
0.05
PR
10
VR (V)
(W)
VRWM
VR
= 0.5
= 0.2
Fig.8
PRLL5818. Maximum permissible junction
temperature as a function of reverse voltage;
device mounted; refer to SOD87 standard
mounting conditions.
0
40
200
0
MBE636
100
20
VR (V)
Tj
(oC)
VRWM
VR
= 0.2
= 0.5
Fig.9
PRLL5818. Reverse power dissipation as a
function of reverse voltage (max. values);
device mounted; refer to SOD87 standard
mounting conditions.
0
40
0.1
0
MBE638
0.05
PR
20
VR (V)
(W)
VRWM
VR
= 0.5
= 0.2
1999 Apr 22
8
Philips Semiconductors
Product specification
Schottky barrier diodes
PRLL5817; PRLL5818; PRLL5819
Fig.10 PRLL5819. Maximum permissible junction
temperature as a function of reverse voltage;
device mounted; refer to SOD87 standard
mounting conditions.
0
20
200
0
MBE637
100
10
VR (V)
Tj
(oC)
VRWM
VR
= 0.2
= 0.5
Fig.11 PRLL5819. Reverse power dissipation as a
function of reverse voltage (max. values);
device mounted; refer to SOD87 standard
mounting conditions.
0
40
0.1
0
MBE639
0.05
PR
20
VR (V)
(W)
VRWM
VR
= 0.5
= 0.2
1999 Apr 22
9
Philips Semiconductors
Product specification
Schottky barrier diodes
PRLL5817; PRLL5818; PRLL5819
PACKAGE OUTLINE
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOD87
100H03
99-03-31
Hermetically sealed glass surface mounted package;
Implotec
TM(1)
technology; 2 connectors
SOD87
UNIT
D
mm
2.1
2.0
2.0
1.8
3.7
3.3
0.3
D1
H
L
DIMENSIONS (mm are the original dimensions)
H
D
D1
L
L
(2)
0
1
2 mm
scale
Notes
1. Implotec is a trademark of Philips.
2. The marking indicates the cathode.
k
a
1999 Apr 22
10
Philips Semiconductors
Product specification
Schottky barrier diodes
PRLL5817; PRLL5818; PRLL5819
NOTES
1999 Apr 22
11
Philips Semiconductors
Product specification
Schottky barrier diodes
PRLL5817; PRLL5818; PRLL5819
NOTES
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Philips Electronics N.V. 1999
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Date of release: 1999 Apr 22
Document order number:
9397 750 05474