PSMN004-36P/36B
N-channel enhancement mode field-effect transistor
Rev. 01 -- 19 November 2001
Product data
1.
Description
N-channel logic level field-effect power transistor in a plastic package using
TrenchMOSTM
1
technology.
Product availability:
PSMN004-36P in SOT78 (TO-220AB)
PSMN004-36B in SOT404 (D
2
-PAK).
2.
Features
s
Very low on-state resistance
s
Fast switching.
3.
Applications
s
DC to DC converters
s
Switch mode power supplies.
4.
Pinning information
[1]
It is not possible to make connection to pin 2 of the SOT404 package.
1.
TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.
Table 1:
Pinning - SOT78 and SOT404, simplified outline and symbol
Pin
Description
Simplified outline
Symbol
1
gate (g)
SOT78 (TO-220AB)
SOT404 (D
2-
PAK)
2
drain (d)
[1]
3
source (s)
mb
drain (d)
MBK106
1 2
mb
3
1
3
2
MBK116
mb
s
d
g
MBB076
Philips Semiconductors
PSMN004-36P/36B
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 -- 19 November 2001
2 of 13
9397 750 08621
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
V
DS
drain-source voltage (DC)
T
j
= 25 to 175
C
-
36
V
I
D
drain current (DC)
T
mb
= 25
C; V
GS
= 5 V
-
75
A
P
tot
total power dissipation
T
mb
= 25
C
-
230
W
T
j
junction temperature
-
175
C
R
DSon
drain-source on-state resistance
V
GS
= 10 V; I
D
= 25 A; T
j
= 25
C
3.5
4
m
V
GS
= 5 V; I
D
= 25 A; T
j
= 25
C
4
5
m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
V
DS
drain-source voltage (DC)
T
j
= 25 to 175
C
-
36
V
V
DGR
drain-gate voltage (DC)
T
j
= 25 to 175
C; R
GS
= 20 k
-
36
V
V
GS
gate-source voltage (DC)
-
15
V
V
GSM
gate-source voltage
t
p
50
s; pulsed;
duty cycle 25 %; T
j
150
C
-
20
V
I
D
drain current (DC)
T
mb
= 25
C; V
GS
= 5 V;
Figure 2
and
3
-
75
A
T
mb
= 100
C; V
GS
= 5 V;
Figure 2
-
75
A
I
DM
peak drain current
T
mb
= 25
C; pulsed; t
p
10
s;
Figure 3
-
240
A
P
tot
total power dissipation
T
mb
= 25
C;
Figure 1
-
230
W
T
stg
storage temperature
-
55
+175
C
T
j
operating junction temperature
-
55
+175
C
Source-drain diode
I
S
source (diode forward) current (DC)
T
mb
= 25
C
-
75
A
I
SM
peak source (diode forward) current T
mb
= 25
C; pulsed; t
p
10
s
-
240
A
Avalanche ruggedness
E
AS
non-repetitive avalanche energy
unclamped inductive load;
I
D
= 75 A; t
p
= 0.1 ms; V
DD
= 15 V;
R
GS
= 50
; V
GS
= 5V; starting T
j
= 25
C;
-
120
mJ
I
AS
non-repetitive avalanche current
unclamped inductive load;
V
DD
= 15 V; R
GS
= 50
; V
GS
= 5V;
starting T
j
= 25
C
-
75
A
Philips Semiconductors
PSMN004-36P/36B
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 -- 19 November 2001
3 of 13
9397 750 08621
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature.
Fig 2.
Normalized continuous drain current as a
function of mounting base temperature.
T
mb
= 25
C; I
DM
is single pulse.
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03aa16
0
40
80
120
0
50
100
150
200
Tmb (
o
C)
Pder
(%)
03ag42
0
40
80
120
0
50
100
150
200
Tmb (C)
ID
(%)
P
der
P
tot
P
tot 25 C
(
)
-----------------------
100%
=
I
der
I
D
I
D 25 C
(
)
-------------------
100%
=
03ag44
1
10
102
103
1
10
102
VDS (V)
ID
(A)
DC
100 ms
10 ms
RDS(on) = VDS/ ID
1 ms
tp = 10 us
100 us
Philips Semiconductors
PSMN004-36P/36B
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 -- 19 November 2001
4 of 13
9397 750 08621
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
7.
Thermal characteristics
7.1 Transient thermal impedance
Table 4:
Thermal characteristics
Symbol Parameter
Conditions
Value
Unit
R
th(j-mb)
thermal resistance from junction to mounting
base
Figure 4
0.65
K/W
R
th(j-a)
thermal resistance from junction to ambient
vertical in still air; SOT78 package
60
K/W
mounted on a printed circuit board;
minimum footprint; SOT404 package
50
K/W
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration.
03ag43
10-3
10-2
10-1
1
10-6
10-5
10-4
10-3
10-2
10-1
1
tp (s)
Zth j-mb
(K/W)
single pulse
= 0.5
0.2
0.1
0.05
0.02
tp
tp
T
P
t
T
=
Philips Semiconductors
PSMN004-36P/36B
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 -- 19 November 2001
5 of 13
9397 750 08621
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
T
j
= 25
C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V
(BR)DSS
drain-source breakdown voltage
I
D
= 0.25 mA; V
GS
= 0 V
T
j
= 25
C
36
-
-
V
T
j
=
-
55
C
32
-
-
V
V
GS(th)
gate-source threshold voltage
I
D
= 1 mA; V
DS
= V
GS
;
Figure 9
T
j
= 25
C
1
1.5
2
V
T
j
= 175
C
0.5
-
-
V
T
j
=
-
55
C
-
-
2.3
V
I
DSS
drain-source leakage current
V
DS
= 30 V; V
GS
= 0 V
T
j
= 25
C
-
0.05
10
A
T
j
= 175
C
-
-
500
A
I
GSS
gate-source leakage current
V
GS
=
10 V; V
DS
= 0 V
-
1
100
nA
R
DSon
drain-source on-state resistance
V
GS
= 5 V; I
D
= 25 A;
Figure 7
and
8
T
j
= 25
C
-
4
5
m
T
j
= 175
C
-
-
9.25
m
V
GS
= 4.5 V; I
D
= 25 A;
Figure 7
and
8
T
j
= 25
C
-
-
5.4
m
V
GS
= 10 V; I
D
= 25 A;
Figure 7
and
8
T
j
= 25
C
-
3.5
4
m
Dynamic characteristics
Q
g(tot)
total gate charge
I
D
= 75 A; V
DD
= 15 V; V
GS
= 5 V;
Figure 13
-
97
-
nC
Q
gs
gate-source charge
-
20
-
nC
Q
gd
gate-drain (Miller) charge
-
39
-
nC
C
iss
input capacitance
V
GS
= 0 V; V
DS
= 20 V; f = 1 MHz;
Figure 11
-
6000
-
pF
C
oss
output capacitance
-
1700
-
pF
C
rss
reverse transfer capacitance
-
1400
-
pF
t
d(on)
turn-on delay time
V
DD
= 15 V; R
D
= 1.2
; V
GS
= 5 V; R
G
= 6
;
resistive load
-
45
-
ns
t
r
turn-on rise time
-
220
-
ns
t
d(off)
turn-off delay time
-
435
-
ns
t
f
turn-off fall time
-
320
-
ns
Source-drain diode
V
SD
source-drain (diode forward) voltage I
S
= 25 A; V
GS
= 0 V;
Figure 12
-
0.85
1.2
V
V
SD
source-drain (diode forward) voltage I
S
= 75 A; V
GS
= 0 V;
Figure 12
-
1.1
-
V
t
rr
reverse recovery time
I
S
= 20 A; dI
S
/dt =
-
100 A/
s; V
GS
= 0 V
-
400
-
ns
Q
r
recovered charge
-
1
-
C
Philips Semiconductors
PSMN004-36P/36B
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 -- 19 November 2001
6 of 13
9397 750 08621
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
T
j
= 25
C
T
j
= 25
C and 175
C; V
DS
>
I
D
x R
DSON
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
T
j
= 25
C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03ag45
0
20
40
60
80
0
0.2
0.4
0.6
0.8
1
VDS (V)
ID
(A)
2.4 V
Tj = 25 C
VGS = 2 V
2.8 V
2.6 V
10 V
2.2 V
5 V
03ag47
0
20
40
60
80
-0.2
0.6
1.4
2.2
3
VGS (V)
ID
(A)
VDS > ID x RDS(ON)
Tj = 25 C
175 C
03ag46
0
0.002
0.004
0.006
0.008
0.01
0
20
40
60
80
ID (A)
RDS(on)
(
)
VGS = 2.6V
Tj = 25 C
10 V
5 V
2.8 V
03aa27
0
0.4
0.8
1.2
1.6
2
-60
0
60
120
180
Tj (
o
C)
a
a
R
DSon
R
DSon 25 C
(
)
-----------------------------
=
Philips Semiconductors
PSMN004-36P/36B
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 -- 19 November 2001
7 of 13
9397 750 08621
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
I
D
= 1 mA; V
DS
= V
GS
T
j
= 25
C; V
DS
= 5 V
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
V
GS
= 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
03aa33
0
0.5
1
1.5
2
2.5
-60
0
60
120
180
Tj (
o
C)
VGS(th)
(V)
max
typ
min
03aa36
10-6
10-5
10-4
10-3
10-2
10-1
0
0.5
1
1.5
2
2.5
3
V
GS
(V)
I
D
(A)
max
typ
min
03ag49
103
104
105
10-1
1
10
102
VDS (V)
C
(pF)
Ciss
Crss
Coss
Philips Semiconductors
PSMN004-36P/36B
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 -- 19 November 2001
8 of 13
9397 750 08621
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
T
j
= 25
C and 175
C; V
GS
= 0 V
I
D
= 75 A; V
DD
= 15 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
Fig 13. Gate-source voltage as a function of gate
charge; typical values.
03ag48
0
20
40
60
80
0
0.4
0.8
1.2
VSD (V)
IS
(A)
Tj = 25 C
175 C
VGS = 0 V
03ag50
0
2
4
6
8
10
0
40
80
120
160
200
QG (nC)
VGS
(V)
ID = 75 A
Tj = 25 C
VDD = 15 V
Philips Semiconductors
PSMN004-36P/36B
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 -- 19 November 2001
9 of 13
9397 750 08621
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
9.
Package outline
Fig 14. SOT78 (TO-220AB).
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT78
SC-46
3-lead TO-220AB
D
D1
q
p
L
1
2
3
L1
(1)
b1
e
e
b
0
5
10 mm
scale
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
DIMENSIONS (mm are the original dimensions)
A
E
A1
c
Note
1. Terminals in this zone are not tinned.
Q
L2
UNIT
A1
b1
D1
e
p
mm
2.54
q
Q
A
b
D
c
L2
max.
3.0
3.8
3.6
15.0
13.5
3.30
2.79
3.0
2.7
2.6
2.2
0.7
0.4
15.8
15.2
0.9
0.7
1.3
1.0
4.5
4.1
1.39
1.27
6.4
5.9
10.3
9.7
L1
(1)
E
L
00-09-07
01-02-16
mounting
base
Philips Semiconductors
PSMN004-36P/36B
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 -- 19 November 2001
10 of 13
9397 750 08621
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Fig 15. SOT404 (D
2-
PAK)
UNIT
A
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
A1
D1
D
max.
E
e
Lp
HD
Q
c
2.54
2.60
2.20
15.80
14.80
2.90
2.10
11
1.60
1.20
10.30
9.70
4.50
4.10
1.40
1.27
0.85
0.60
0.64
0.46
b
DIMENSIONS (mm are the original dimensions)
SOT404
0
2.5
5 mm
scale
Plastic single-ended surface mounted package (Philips version of D
2
-PAK); 3 leads
(one lead cropped)
SOT404
e
e
E
b
D1
HD
D
Q
Lp
c
A1
A
1
3
2
mounting
base
99-06-25
01-02-12
Philips Semiconductors
PSMN004-36P/36B
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 -- 19 November 2001
11 of 13
9397 750 08621
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
10. Revision history
Table 6:
Revision history
Rev Date
CPCN
Description
01
20011119
Product Data; Initial Version
9397 750 08621
Philips Semiconductors
PSMN004-36P/36B
N-channel enhancement mode field-effect transistor
Koninklijke Philips Electronics N.V. 2001. All rights reserved.
Product data
Rev. 01 -- 19 November 2001
12 of 13
Contact information
For additional information, please visit http://www.semiconductors.philips.com.
For sales office addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com.
Fax: +31 40 27 24825
11. Data sheet status
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
12. Definitions
Short-form specification -- The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition -- Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information -- Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
13. Disclaimers
Life support -- These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes -- Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Data sheet status
[1]
Product status
[2]
Definition
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips Semiconductors
reserves the right to change the specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published at a
later date. Philips Semiconductors reserves the right to change the specification without notice, in order to
improve the design and supply the best possible product.
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the right to
make changes at any time in order to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change Notification (CPCN) procedure
SNW-SQ-650A.
Koninklijke Philips Electronics N.V. 2001.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 19 November 2001
Document order number: 9397 750 08621
Contents
Philips Semiconductors
PSMN004-36P/36B
N-channel enhancement mode field-effect transistor
1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
3
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
4
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
5
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
6
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
7
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
7.1
Transient thermal impedance . . . . . . . . . . . . . . 4
8
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11
11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12
12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
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