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DATA SHEET
Product specification
File under Discrete Semiconductors, SC13b
April 1995
DISCRETE SEMICONDUCTORS
BSP126
N-channel enhancement mode
vertical D-MOS transistor
April 1995
2
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
BSP126
DESCRIPTION
N-channel enhancement mode
vertical D-MOS transistor in a
miniature SOT223 envelope and
designed for use as a line interrupter
in telephone sets and for application
in relay, high-speed and
line-transformer drivers.
FEATURES
Direct interface to C-MOS, TTL,
etc.
High-speed switching.
No secondary breakdown.
QUICK REFERENCE DATA
PINNING - SOT223
Marking code
BSP126
Drain-source voltage
V
DS
max.
250 V
Drain current (DC)
I
D
max.
350 mA
Total power dissipation up to T
amb
= 25
C
P
tot
max.
1.5 W
Drain-source on-resistance
typ.
max.
5.0
7.0
I
D
= 300 mA; V
GS
= 10 V
R
DS(on)
Gate-source threshold voltage
V
GS(th)
max.
2 V
1
= gate
2
= drain
3
= source
4
= drain
PIN CONFIGURATION
Fig.1 Simplified outline and symbol.
handbook, halfpage
MAM054
4
1
2
3
Top view
s
d
g
April 1995
3
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
BSP126
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
Note
1. Device mounted on an epoxy printed-circuit board 40 mm
40 mm
1.5 mm; mounting pad for the drain lead
min. 6 cm
2
.
CHARACTERISTICS
T
j
= 25
C unless otherwise specified
Drain-source voltage
V
DS
max.
250 V
Gate-source voltage (open drain)
V
GSO
max.
20 V
Drain current (DC)
I
D
max.
350 mA
Drain current (peak)
I
DM
max.
1.2 A
Total power dissipation up to T
amb
= 25
C (note 1)
P
tot
max.
1.5
W
Storage temperature range
T
stg
-
65 to + 150
C
Junction temperature
T
j
max.
150
C
From junction to ambient (note 1)
R
th j-a
=
83.3
K/W
Drain-source breakdown voltage
I
D
= 10
A; V
GS
= 0
V
(BR)DSS
min.
250 V
Drain-source leakage current
V
DS
= 200 V; V
GS
= 0
I
DSS
max.
1.0
A
Gate-source leakage current
V
GS
= 20 V; V
DS
= 0
I
GSS
max.
100 nA
Gate threshold voltage
min.
max.
0.8
2.0
V
V
I
D
= 1 mA; V
DS
= V
GS
V
GS(th)
Drain-source on-resistance
typ.
max.
5.0
7.0
I
D
= 300 mA; V
GS
= 10 V
R
DS(on)
I
D
= 20 mA; V
GS
= 2.4 V
R
DS(on)
max.
10
Transfer admittance
min.
typ.
200
400
mS
mS
I
D
= 300 mA; V
DS
= 25 V
Y
fs
Input capacitance at f = 1 MHz;
typ.
max.
65
90
pF
pF
V
DS
= 25 V; V
GS
= 0
C
iss
Output capacitance at f = 1 MHz;
typ.
max.
20
30
pF
pF
V
DS
= 25 V; V
GS
= 0
C
oss
April 1995
4
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
BSP126
Feedback capacitance at f = 1 MHz;
typ.
max.
5
15
pF
pF
V
DS
= 25 V; V
GS
= 0
C
rss
Switching times (see Figs 2 and 3)
I
D
= 250 mA; V
DD
= 50 V;
V
GS
= 0 to 10 V
t
on
typ.
max.
5
10
ns
ns
t
off
typ.
max.
20
30
ns
ns
Fig.2 Switching time test circuit.
handbook, halfpage
MSA631
50
VDD = 50 V
ID
10 V
0 V
Fig.3 Input and output waveforms.
handbook, halfpage
MBB692
10 %
90 %
90 %
10 %
ton
toff
OUTPUT
INPUT
April 1995
5
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
BSP126
Fig.4 Power derating curve.
handbook,
0
50
100
200
2
0
1.6
150
1.2
0.8
0.4
MBB693
Ptot
(W)
Tamb (
C)
Fig.5
Output characteristics; T
j
= 25
C; typical
values.
handbook, halfpage
0
10
2
0
0.4
0.8
1.2
1.6
2
4
6
ID
(A)
8
MDA712
VDS (V)
VGS = 10 V
2 V
4 V
3 V
6 V
5 V
Fig.6
Transfer characteristic; V
DS
= 10 V;
T
j
= 25
C; typical value.
handbook, halfpage
0
10
2
0
0.4
0.8
1.2
1.6
2
4
6
ID
(A)
8
MDA713
VGS (V)
Fig.7
On-resistance as a function of drain current;
T
j
= 25
C; typical values.
handbook, halfpage
16
0
4
8
RDSon (
)
ID
(mA)
12
10
4
10
3
10
2
10
MDA714
VGS = 10 V 5 V
4 V
3 V
April 1995
6
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
BSP126
Fig.8
typical values.
k
R
DS on
(
)
at T
j
R
DS on
(
)
at 25
C
----------------------------------------------
;
=
handbook, half age
-
50
0
50
150
2.8
0.4
2.4
2
100
1.6
1.2
0.8
MDA717
k
Tj (
C)
(1)
(2)
Fig.9
V
GS(th)
at 1 mA;
typical values.
k
V
GS th
( )
at T
j
V
GS th
( )
at 25
C
---------------------------------------------
;
=
handbook, halfpage
-
50
0
50
Tj (
C)
k
150
1.4
1.2
0.8
0.6
1
100
MDA716
Fig.10 Capacitances as a function of drain-source
voltage; V
GS
= 0; f = 1 MHz; T
j
= 25
C;
typical values.
handbook, halfpage
0
25
200
0
40
80
120
160
5
10
15
C
(pF)
20
MDA715
VDS (V)
Crss
Ciss
Coss
April 1995
7
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
BSP126
PACKAGE OUTLINE
UNIT
A
1
b
p
c
D
E
e
1
H
E
L
p
Q
y
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
0.10
0.01
1.8
1.5
0.80
0.60
b
1
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
2.3
e
4.6
7.3
6.7
1.1
0.7
0.95
0.85
0.1
0.1
0.2
DIMENSIONS (mm are the original dimensions)
SOT223
96-11-11
97-02-28
w
M
b
p
D
b
1
e
1
e
A
A
1
L
p
Q
detail X
H
E
E
v
M
A
A
B
B
c
y
0
2
4 mm
scale
A
X
1
3
2
4
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
SOT223
April 1995
8
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
BSP126
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Application information
Where application information is given, it is advisory and does not form part of the specification.
April 1995
9
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
BSP126
NOTES
April 1995
10
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
BSP126
NOTES
April 1995
11
Philips Semiconductors
Product specification
N-channel enhancement mode vertical
D-MOS transistor
BSP126
NOTES
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Philips Electronics N.V. 1997
SCA54
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Date of release: April 1995
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9397 750 02474