Si4420DY
N-channel enhancement mode field-effect transistor
Rev. 01 -- 28 May 2001
Product data
c
c
M3D315
1.
Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOSTM
1
technology.
Product availability:
Si4420DY in SOT96-1 (SO8).
2.
Features
s
Low on-state resistance
s
Fast switching
s
TrenchMOSTM technology.
3.
Applications
s
DC to DC convertors
s
DC motor control
s
Lithium-ion battery applications
s
Notebook PC
s
Portable equipment applications.
4.
Pinning information
1.
TrenchMOS is a trademark of Royal Philips Electronics.
Table 1:
Pinning - SOT96-1, simplified outline and symbol
Pin
Description
Simplified outline
Symbol
1,2,3
source (s)
SOT96-1 (SO8)
4
gate (g)
5,6,7,8
drain (d)
4
5
1
8
Top view
MBK187
s
d
g
MBB076
Philips Semiconductors
Si4420DY
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 -- 28 May 2001
2 of 12
9397 750 08239
Philips Electronics N.V. 2001. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
V
DS
drain-source voltage (DC)
T
j
= 25 to 150
C
-
30
V
I
D
drain current (DC)
T
amb
= 25
C; pulsed; t
p
10 s
-
12.5
A
P
tot
total power dissipation
T
amb
= 25
C; pulsed; t
p
10 s
-
2.5
W
T
j
junction temperature
-
150
C
R
DSon
drain-source on-state resistance
V
GS
= 10 V; I
D
= 12.5 A
7.3
9
m
V
GS
= 4.5 V; I
D
= 10.5 A
10.9
13
m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
V
DS
drain-source voltage (DC)
T
j
= 25 to 150
C
-
30
V
V
GS
gate-source voltage (DC)
-
20
V
I
D
drain current (DC)
T
amb
= 25
C; pulsed; t
p
10 s;
Figure 2
and
3
-
12.5
A
T
amb
= 70
C; pulsed; t
p
10 s;
Figure 2
-
10
A
I
DM
peak drain current
T
amb
= 25
C; pulsed; t
p
10
s;
Figure 3
-
50
A
P
tot
total power dissipation
T
amb
= 25
C; pulsed; t
p
10 s;
-
2.5
W
T
amb
= 70
C; pulsed; t
p
10 s;
Figure 1
-
1.6
W
T
stg
storage temperature
-
55
+150
C
T
j
operating junction temperature
-
55
+150
C
Source-drain diode
I
S
source (diode forward) current (DC)
T
amb
= 25
C; pulsed; t
p
10 s
-
2.3
A
Philips Semiconductors
Si4420DY
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 -- 28 May 2001
3 of 12
9397 750 08239
Philips Electronics N.V. 2001. All rights reserved.
V
GS
10 V
Fig 1.
Normalized total power dissipation as a
function of ambient temperature.
Fig 2.
Normalized continuous drain current as a
function of ambient temperature.
T
amb
= 25
C; I
DM
is single pulse
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03aa11
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
P
der
T
amb
(
o
C)
(%)
03aa19
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
I
der
T
amb
(
o
C)
(%)
P
der
P
tot
P
tot 25 C
(
)
----------------------
100%
=
I
D
I
D
I
D 25 C
(
)
-------------------
100%
=
03ae55
10-2
10-1
1
10
102
10-1
1
10
102
V
DS
(V)
I
D
(A)
D.C.
100 ms
10 ms
R
DSon
= V
DS
/ I
D
1 ms
tp = 10 s
100 s
tp
tp
T
P
t
T
=
Philips Semiconductors
Si4420DY
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 -- 28 May 2001
4 of 12
9397 750 08239
Philips Electronics N.V. 2001. All rights reserved.
7.
Thermal characteristics
7.1 Transient thermal impedance
Table 4:
Thermal characteristics
Symbol Parameter
Conditions
Value
Unit
R
th(j-a)
thermal resistance from junction to ambient
mounted on a printed circuit board;
minimum footprint, t
10 sec.
Figure 4
50
K/W
Fig 4.
Transient thermal impedance from junction to ambient as a function of pulse duration.
03ae54
10-1
1
10
102
10-4
10-3
10-2
10-1
1
10
102
103
t
p
(s)
Z
th(j-amb)
(K/W)
single pulse
= 0.5
0.2
0.1
0.05
0.02
tp
tp
T
P
t
T
=
Philips Semiconductors
Si4420DY
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 -- 28 May 2001
5 of 12
9397 750 08239
Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
T
j
= 25
C unless otherwise specified
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V
GS(th)
gate-source threshold voltage
I
D
= 250
A; V
DS
= V
GS
;
Figure 9
1
-
-
V
I
DSS
drain-source leakage current
V
DS
= 30 V; V
GS
= 0 V
T
j
= 25
C
-
-
1
A
T
j
= 55
C
-
-
5
A
I
GSS
gate-source leakage current
V
GS
=
20 V; V
DS
= 0 V
-
-
100
nA
I
D(on)
on-state drain current
V
DS
5 V; V
GS
= 10 V
30
-
A
R
DSon
drain-source on-state resistance
V
GS
= 10 V; I
D
= 12.5 A;
Figure 7
and
8
-
7.3
9
m
V
GS
= 4.5 V; I
D
= 10.5 A;
Figure 7
and
8
-
10.9
13
m
Dynamic characteristics
g
fs
forward transconductance
V
DS
= 15 V; I
D
= 7 A;
Figure 11
-
15
-
S
Q
g(tot)
total gate charge
I
D
= 12.5 A; V
DD
= 15 V; V
GS
= 10 V;
Figure 14
-
64.5
120
nC
Q
gs
gate-source charge
-
7.6
-
nC
Q
gd
gate-drain (Miller) charge
-
11.5
-
nC
t
d(on)
turn-on delay time
V
DD
= 15 V; R
D
= 15
; V
GS
= 10 V; R
G
= 6
-
12
30
ns
t
r
turn-on rise time
-
15
60
ns
t
d(off)
turn-off delay time
-
60
150
ns
t
f
turn-off fall time
-
50
140
ns
Source-drain (reverse) diode
V
SD
source-drain (diode forward) voltage I
S
= 2.3 A; V
GS
= 0 V;
Figure 13
-
0.7
1.1
V
t
rr
reverse recovery time
I
S
= 2.3 A; dI
S
/dt =
-
100 A/
s
-
60
-
ns
T
j
= 25
C and 150
C; V
DS
>
I
D
x R
DSon
Fig 5.
Output characteristic; drain current as a
function of drain-source voltage; typical values.
Fig 6.
Transfer characteristic: drain current as
function of gate-source voltage; typical values
03ae56
0
10
20
30
40
50
0
0.5
1
1.5
2
V
DS
(V)
I
D
(A)
V
GS
= 3 V
4 V
10 V
03ae58
0
10
20
30
40
50
0
1
2
3
4
V
GS
(V)
I
D
(A)
V
DS
> I
D
x R
DSon
25 C
150 C
Philips Semiconductors
Si4420DY
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 -- 28 May 2001
6 of 12
9397 750 08239
Philips Electronics N.V. 2001. All rights reserved.
T
j
= 25
C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
I
D
= 250
A; V
DS
= V
GS
T
j
= 25
C; V
DS
= 5 V
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
03ae57
0
0.01
0.02
0
10
20
30
40
50
I
D
(A)
R
DSon
(
)
T
j
= 25 C
4 V
V
GS
=10 V
03ad57
0
0.4
0.8
1.2
1.6
2
-60
0
60
120
180
T
j
(C)
a
a
R
DSon
R
DSon 25 C
(
)
----------------------------
=
03aa33
0
0.5
1
1.5
2
2.5
-60
0
60
120
180
Tj (
o
C)
VGS(th)
(V)
03aa36
10-6
10-5
10-4
10-3
10-2
10-1
0
0.5
1
1.5
2
2.5
3
VGS (V)
ID
(A)
max
typ
min
Philips Semiconductors
Si4420DY
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 -- 28 May 2001
7 of 12
9397 750 08239
Philips Electronics N.V. 2001. All rights reserved.
T
j
= 25
C and 150
C; V
DS
>
I
D
x R
DSon
V
GS
= 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
T
j
= 25
C and 150
C; V
GS
= 0 V
I
D
= 12.5 A; V
DD
=15 V
Fig 13. Source (diode forward) current as a function of
source-drain (diode forward) voltage;
typical values.
Fig 14. Gate-source voltage as a function of gate
charge; typical values.
03ae59
0
10
20
30
40
50
0
10
20
30
40
50
I
D
(A)
g
fs
(S)
T
j
= 25 C
150 C
V
DS
> I
D
x R
DSon
03ae61
102
103
10-1
1
10
102
V
DS
(V)
C
iss
,
C
oss
,
C
rss
(pF)
C
iss
C
oss
C
rss
104
03ae60
0
10
20
30
40
50
0
0.3
0.6
0.9
1.2
V
SD
(V)
I
S
(A)
T
j
= 25 C
150 C
V
GS
= 0 V
03ae62
0
2
4
6
8
10
0
15
30
45
60
75
Q
G
(nC)
V
GS
(V)
I
D
= 12.5A
T
j
= 25 C
V
DD
= 15 V
Philips Semiconductors
Si4420DY
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 -- 28 May 2001
8 of 12
9397 750 08239
Philips Electronics N.V. 2001. All rights reserved.
9.
Package outline
Fig 15. SOT96-1 (SO8).
UNIT
A
max.
A
1
A
2
A
3
b
p
c
D
(1)
E
(2)
(1)
e
H
E
L
L
p
Q
Z
y
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
inches
1.75
0.25
0.10
1.45
1.25
0.25
0.49
0.36
0.25
0.19
5.0
4.8
4.0
3.8
1.27
6.2
5.8
1.05
0.7
0.6
0.7
0.3
8
0
o
o
0.25
0.1
0.25
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
Notes
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
1.0
0.4
SOT96-1
X
w
M
A
A
1
A
2
b
p
D
H
E
L
p
Q
detail X
E
Z
e
c
L
v
M
A
(A )
3
A
4
5
pin 1 index
1
8
y
076E03
MS-012
0.069
0.010
0.004
0.057
0.049
0.01
0.019
0.014
0.0100
0.0075
0.20
0.19
0.16
0.15
0.050
0.244
0.228
0.028
0.024
0.028
0.012
0.01
0.01
0.041
0.004
0.039
0.016
0
2.5
5 mm
scale
SO8: plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
97-05-22
99-12-27
Philips Semiconductors
Si4420DY
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 -- 28 May 2001
9 of 12
9397 750 08239
Philips Electronics N.V. 2001. All rights reserved.
10. Revision history
Table 6:
Revision history
Rev Date
CPCN
Description
01
20010528
-
Product specification; initial version
Philips Semiconductors
Si4420DY
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 -- 28 May 2001
10 of 12
9397 750 08239
Philips Electronics N.V. 2001 All rights reserved.
11. Data sheet status
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
12. Definitions
Short-form specification -- The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition -- Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information -- Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
13. Disclaimers
Life support -- These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes -- Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design
and/or
performance.
Philips
Semiconductors
assumes
no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products
are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
Data sheet status
[1]
Product status
[2]
Definition
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips Semiconductors
reserves the right to change the specification in any manner without notice.
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published at a
later date. Philips Semiconductors reserves the right to change the specification without notice, in order to
improve the design and supply the best possible product.
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the right to
make changes at any time in order to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change Notification (CPCN) procedure
SNW-SQ-650A.
Philips Semiconductors
Si4420DY
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 -- 28 May 2001
11 of 12
9397 750 08239
Philips Electronics N.V. 2001. All rights reserved.
Philips Semiconductors - a worldwide company
Argentina:
see South America
Australia:
Tel. +61 2 9704 8141, Fax. +61 2 9704 8139
Austria:
Tel. +43 160 101, Fax. +43 160 101 1210
Belarus:
Tel. +375 17 220 0733, Fax. +375 17 220 0773
Belgium:
see The Netherlands
Brazil:
see South America
Bulgaria:
Tel. +359 268 9211, Fax. +359 268 9102
Canada:
Tel. +1 800 234 7381
China/Hong Kong:
Tel. +852 2 319 7888, Fax. +852 2 319 7700
Colombia:
see South America
Czech Republic:
see Austria
Denmark:
Tel. +45 3 288 2636, Fax. +45 3 157 0044
Finland:
Tel. +358 961 5800, Fax. +358 96 158 0920
France:
Tel. +33 1 4728 6600, Fax. +33 1 4728 6638
Germany:
Tel. +49 40 23 5360, Fax. +49 402 353 6300
Hungary:
Tel. +36 1 382 1700, Fax. +36 1 382 1800
India:
Tel. +91 22 493 8541, Fax. +91 22 493 8722
Indonesia:
see Singapore
Ireland:
Tel. +353 17 64 0000, Fax. +353 17 64 0200
Israel:
Tel. +972 36 45 0444, Fax. +972 36 49 1007
Italy:
Tel. +39 039 203 6838, Fax +39 039 203 6800
Japan:
Tel. +81 33 740 5130, Fax. +81 3 3740 5057
Korea:
Tel. +82 27 09 1412, Fax. +82 27 09 1415
Malaysia:
Tel. +60 37 50 5214, Fax. +60 37 57 4880
Mexico:
Tel. +9-5 800 234 7381
Middle East:
see Italy
Netherlands:
Tel. +31 40 278 2785, Fax. +31 40 278 8399
New Zealand:
Tel. +64 98 49 4160, Fax. +64 98 49 7811
Norway:
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Philippines:
Tel. +63 28 16 6380, Fax. +63 28 17 3474
Poland:
Tel. +48 22 5710 000, Fax. +48 22 5710 001
Portugal:
see Spain
Romania:
see Italy
Russia:
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore:
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia:
see Austria
Slovenia:
see Italy
South Africa:
Tel. +27 11 471 5401, Fax. +27 11 471 5398
South America:
Tel. +55 11 821 2333, Fax. +55 11 829 1849
Spain:
Tel. +34 33 01 6312, Fax. +34 33 01 4107
Sweden:
Tel. +46 86 32 2000, Fax. +46 86 32 2745
Switzerland:
Tel. +41 14 88 2686, Fax. +41 14 81 7730
Taiwan:
Tel. +886 22 134 2451, Fax. +886 22 134 2874
Thailand:
Tel. +66 23 61 7910, Fax. +66 23 98 3447
Turkey:
Tel. +90 216 522 1500, Fax. +90 216 522 1813
Ukraine:
Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom:
Tel. +44 208 730 5000, Fax. +44 208 754 8421
United States:
Tel. +1 800 234 7381
Uruguay:
see South America
Vietnam:
see Singapore
Yugoslavia:
Tel. +381 11 3341 299, Fax. +381 11 3342 553
For all other countries apply to: Philips Semiconductors,
Marketing Communications,
Building BE, P.O. Box 218, 5600 MD EINDHOVEN,
The Netherlands, Fax. +31 40 272 4825
Internet: http://www.semiconductors.philips.com
(SCA72)
Philips Electronics N.V. 2001.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 28 May 2001
Document order number: 9397 750 08239
Contents
Philips Semiconductors
Si4420DY
N-channel enhancement mode field-effect transistor
1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
3
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
4
Pinning information . . . . . . . . . . . . . . . . . . . . . . 1
5
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
6
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
7
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
7.1
Transient thermal impedance . . . . . . . . . . . . . . 4
8
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5
9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
10
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9
11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 10
12
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
13
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
PDF 
ZIP