DATA SHEET
Product specification
Supersedes data of 2003 Aug 13
2004 Jan 27
INTEGRATED CIRCUITS
TDA1565TH
High efficiency 2
40 W / 2
stereo car radio power amplifier
2004 Jan 27
2
Philips Semiconductors
Product specification
High efficiency 2
40 W / 2
stereo car radio power amplifier
TDA1565TH
FEATURES
Low dissipation due to switching from Single-Ended
(SE) to Bridge-Tied Load (BTL) mode
Differential inputs with high Common Mode Rejection
Ratio (CMRR)
Mute, standby or operating mode selectable by pin
Load dump protection circuit
Short-circuit safe to ground; to supply voltage and
across load
Loudspeaker protection circuit
Thermal protection at high junction temperature
Device switches to single-ended operation at high
junction temperature
Clip detection at 2.5 % THD
Diagnostic signal indicating clipping, short-circuit
protection and pre-warning of thermal protection.
GENERAL DESCRIPTION
The TDA1565TH is a monolithic power amplifier in a
20-lead heatsink small outline plastic package. It contains
two identical 40 W amplifiers. Power dissipation is
minimized by switching from SE to BTL mode only when a
higher output voltage swing is needed. The device is
developed primarily for car radio applications.
QUICK REFERENCE DATA
ORDERING INFORMATION
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
P
supply voltage
DC-biased
6.0
14.4
18
V
non-operating
-
-
30
V
load dump
-
-
45
V
I
ORM
repetitive peak output current
-
-
8
A
I
q(tot)
total quiescent current
R
L
=
-
95
150
mA
I
stb
standby current
-
1
50
A
Z
i
differential input impedance
90
120
150
k
P
o
output power
R
L
= 2
; THD 0.5 %
25
31
-
W
R
L
= 2
; THD 10 %
37
40
-
W
R
L
= 2
; EIAJ
-
60
-
W
G
v
voltage gain
25
26
27
dB
CMRR
common mode rejection ratio
f = 1 kHz; R
s
= 0
-
80
-
dB
SVRR
supply voltage ripple rejection
f = 1 kHz; R
s
= 0
50
65
-
dB
V
O
DC output offset voltage
-
-
100
mV
cs
channel separation
R
s
= 0
; P
o
= 25 W
50
70
-
dB
G
v
channel unbalance
-
-
1
dB
TYPE
NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
TDA1565TH
HSOP20
plastic, heatsink small outline package; 20 leads; low stand-off
height
SOT418-3
2004 Jan 27
3
Philips Semiconductors
Product specification
High efficiency 2
40 W / 2
stereo car radio power amplifier
TDA1565TH
BLOCK DIAGRAM
handbook, full pagewidth
MHC600
+
-
+
-
+
-
+
-
MUTE
channel 2
channel 1
V/I
V/I
V/I
I/V
I/V
V/I
SLAVE
CONTROL
14
13
IN2
+
19
CIN
IN2
-
60
k
60
k
60
k
60
k
25 k
Vref
OUT2
-
OUT2
+
7
8
CSE
16
+
-
+
-
+
-
+
-
MUTE
SLAVE
CONTROL
17
18
IN1
+
1
n.c.
IN1
-
OUT1
+
OUT1
-
4
3
+
-
VP
STANDBY
LOGIC
CLIP DETECTION AND
THERMAL PROTECTION
PRE-WARNING
2
15
MODE
DIAG
GND1
5
GND2
6
VP2
11
VP1
20
TDA1565TH
9
n.c.
10
n.c.
12
n.c.
Fig.1 Block diagram.
2004 Jan 27
4
Philips Semiconductors
Product specification
High efficiency 2
40 W / 2
stereo car radio power amplifier
TDA1565TH
PINNING
SYMBOL
PIN
DESCRIPTION
n.c.
1
not connected
MODE
2
mute/standby/operating mode
selection
OUT1
-
3
inverting channel 1 output
OUT1+
4
non-inverting channel 1 output
GND1
5
ground 1
GND2
6
ground 2
OUT2
-
7
inverting channel 2 output
OUT2+
8
non-inverting channel 2 output
n.c.
9
not connected
n.c.
10
not connected
V
P2
11
supply voltage 2
n.c.
12
not connected
IN2
-
13
inverting channel 2 input
IN2+
14
non-inverting channel 2 input
DIAG
15
diagnostic output
CSE
16
electrolytic capacitor for SE mode
IN1+
17
non-inverting channel 1 input
IN1
-
18
inverting channel 1 input
CIN
19
common input
V
P1
20
supply voltage 1
TDA1565TH
V
P1
n.c.
CIN
MODE
IN1
-
OUT1
-
IN1
+
OUT1
+
CSE
GND1
DIAG
GND2
IN2
+
OUT2
-
IN2
-
OUT2
+
n.c.
n.c.
V
P2
n.c.
001aaa306
20
19
18
17
16
15
14
13
12
11
9
10
7
8
5
6
3
4
1
2
Fig.2 Pin configuration.
2004 Jan 27
5
Philips Semiconductors
Product specification
High efficiency 2
40 W / 2
stereo car radio power amplifier
TDA1565TH
FUNCTIONAL DESCRIPTION
The TDA1565TH contains two identical amplifiers with
differential inputs. At low output power (output amplitudes
of up to 3 V (RMS) at V
P
= 14.4 V), the device operates as
a normal SE amplifier. When a larger output voltage swing
is required, the circuit automatically switches internally to
BTL operation.
With a sine wave input signal, the power dissipation of a
conventional BTL amplifier with an output power of up to
3 W is more than twice the power dissipation of the
TDA1565TH (see Fig.10).
During normal use, when the amplifier is driven by typical
variable signals such as music, the high (BTL) output
power is only needed for a small percentage of time.
Assuming that a music signal has a normal (Gaussian)
amplitude distribution, the power dissipation of a
conventional BTL amplifier with the same output power is
approximately 70 % higher (see Fig.11).
The heatsink must be designed for music signal operation.
When such a heatsink is used, the IC's thermal protection
will disable the BTL mode when the junction temperature
exceeds 150
C. In this case the output power is limited to
10 W per amplifier. The gain of each amplifier is internally
fixed at 26 dB.
The device can be switched to any of the following modes
by applying the appropriate voltage to the MODE pin (see
Fig.3):
Standby with low standby current (less than 50
A)
Mute condition; DC adjusted
On, operation.
The device is fully protected against a short-circuit of the
output pins to ground or to the supply voltage. It is also
protected against a loudspeaker short-circuit and against
high junction temperatures. In the event of a permanent
short-circuit condition, the output stage is repeatedly
switched on and off with a low duty-cycle resulting in low
power dissipation.
When the supply voltage drops below 6 V (e.g. vehicle
engine start), the circuit is immediately muted to prevent
audible `clicks' that may be produced in the electronic
circuitry preceding the power amplifier.
The voltage across the SE electrolytic capacitor
connected to pin 16 is kept at 0.5 V
P
by a voltage buffer
(see Fig.1). The capacitor value has an important
influence on the output power in SE mode, especially at
low frequency signals; a high value is recommended to
minimize power dissipation at low frequencies.
The diagnostic output indicates the following conditions:
Clip detection at 2.5 % THD (see Fig.4)
Short-circuit protection (see Fig.5):
When an output short-circuit occurs (for at least
10
s); the output stages are switched off for approx.
500 ms, after which time the outputs are checked to
see if a short-circuit condition still exists. During any
short-circuit condition, the power dissipation is very
low. During a short-circuit condition pin DIAG is at
logic LOW.
Start-up/shutdown; when the product is internally muted
Thermal protection pre-warning:
If the junction temperature rises above 145
C but is
below the thermal protection temperature of 150
C,
the diagnostic output indicates that the thermal
protection condition is about to become active. This
pre-warning can be used by another device to reduce
the amplitude of the input signal which would reduce
the power dissipation. The thermal protection
pre-warning is indicated by a logic LOW at pin DIAG.
handbook, halfpage
MGR176
18
VMODE
(V)
4
3
2
1
0
Mute
Operating
Standby
Fig.3
Switching levels of the mode select pin
(pin MODE).
2004 Jan 27
6
Philips Semiconductors
Product specification
High efficiency 2
40 W / 2
stereo car radio power amplifier
TDA1565TH
Heatsink design
There are two parameters that determine the size of the
heatsink. The first is the rating of the virtual junction
temperature and the second is the ambient temperature at
which the amplifier must still deliver its full power in the
BTL mode.
Example:
With a conventional BTL amplifier, the maximum power
dissipation for a typical signal, such as music (at each
amplifier) will be approximately two times 15 W. At a virtual
junction temperature of 150
C and a maximum ambient
temperature of 65
C, R
th(vj-c)
= 1.8 K/W and
R
th(c-h)
= 0.2 K/W. For a conventional BTL amplifier the
thermal resistance of the heatsink should be:
Compared to a conventional BTL amplifier, the
TDA1565TH has a higher efficiency. The thermal
resistance of the heatsink should be:
(see Fig.6).
handbook, halfpage
MHC601
VOUT1;
VOUT2
VDIAG
0
0
t
Fig.4 Clip detection waveforms.
handbook, halfpage
MHC595
output pins
short-circuit
(to ground)
short-circuit
removed
loudspeaker
short-circuit
500
ms
500
ms
500
ms
500
ms
500
ms
VDIAG
0
Imax
Imax
t
t
10
s 10
s
10
s
10
s 10
s
IOUT1;
IOUT2
Fig.5 Short-circuit protection waveforms.
150
65
2
15
----------------------
1.8
0.2
0.83 K/W
=
150
65
2
10
----------------------
1.8
0.2
2.25 K/W
=
handbook, halfpage
MHC586
case
virtual junction
channel 2
channel 1
3.0 K/W
3.0 K/W
0.3 K/W
Fig.6 Equivalent thermal resistance network.
2004 Jan 27
7
Philips Semiconductors
Product specification
High efficiency 2
40 W / 2
stereo car radio power amplifier
TDA1565TH
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
P
supply voltage
operating
-
18
V
non operating
-
30
V
load dump; t
r
>
2.5 ms
-
45
V
V
P(sc)
short-circuit safe voltage
-
16
V
V
rp
reverse polarity voltage
-
6
V
I
ORM
repetitive peak output current
-
8
A
P
tot
total power dissipation
-
60
W
T
stg
storage temperature
-
55
+150
C
T
vj
virtual junction temperature
-
150
C
T
amb
operating ambient temperature
-
40
+85
C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th(j-c)
thermal resistance from junction to case
see Fig.6
1.8
K/W
R
th(j-a)
thermal resistance from junction to ambient
in free air
40
K/W
2004 Jan 27
8
Philips Semiconductors
Product specification
High efficiency 2
40 W / 2
stereo car radio power amplifier
TDA1565TH
DC CHARACTERISTICS
V
P
= 14.4 V; T
amb
= 25
C; measured in Fig.7; unless otherwise specified.
Notes
1. The circuit is DC-biased at V
P
= 6 to 18 V and AC-operating at V
P
= 8 to 18 V.
2. If the junction temperature exceeds 150
C, the output power is limited to 10 W per channel.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supplies
V
P
supply voltage
note 1
6.0
14.4
18.0
V
I
q(tot)
quiescent current
R
L
=
-
95
150
mA
I
stb
standby current
-
1
50
A
V
CSE
average voltage of SE
electrolytic capacitor at pin 16
-
7.1
-
V
V
O
DC output offset voltage
on state
-
-
100
mV
mute state
-
-
100
mV
Mode select switch (see Fig.3)
V
MODE
voltage at mode select pin
standby condition
0
-
1
V
mute condition
2
-
3
V
on condition
4
5
V
P
V
I
MODE
mode select input current
V
MODE
= 5 V
-
25
40
A
Diagnostic
V
DIAG
voltage at diagnostic output pin
protection/temp
pre-warning/clip detection
-
-
0.5
V
I
DIAG
diagnostic sink current
V
DIAG
< 0.5 V
2
-
-
mA
Protection
T
pre
pre-warning temperature
-
145
-
C
T
dis(BTL)
BTL disable temperature
note 2
-
150
-
C
2004 Jan 27
9
Philips Semiconductors
Product specification
High efficiency 2
40 W / 2
stereo car radio power amplifier
TDA1565TH
AC CHARACTERISTICS
V
P
= 14.4 V; R
L
= 2
; f = 1 kHz; T
amb
= 25
C; measured in Fig.7; unless otherwise specified.
Notes
1. The distortion is measured with a bandwidth of 10 Hz to 30 kHz (see Figures 20 and 21).
2. Frequency response externally fixed (input capacitors determine the low frequency roll-off).
3. The SE to BTL switch voltage level depends on the value of V
P
.
4. Noise output voltage measured with a bandwidth of 20 Hz to 20 kHz.
5. Noise output voltage is independent of the source resistance (R
s
).
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
P
o
output power
R
L
= 2
; THD = 0.5 %
25
31
-
W
R
L
= 2
; THD = 10 %
37
40
-
W
R
L
= 2
; EIAJ
-
60
-
W
V
P
= 13.2 V; THD = 0.5 %
-
26
-
W
V
P
= 13.2 V; THD = 10 %
-
34
-
W
THD
total harmonic distortion
P
o
= 1 W; note 1
-
0.1
-
%
P
power dissipation
see Figs 10 and 11
W
B
p
power bandwidth
THD = 0.5 %; P
o
=
-
1 dB
with respect to 25 W
-
20 to
15000
-
Hz
f
ro(l)
low frequency roll-off
-
1 dB; note 2
-
25
-
Hz
f
ro(h)
high frequency roll-off
-
1 dB
130
-
-
kHz
G
v
closed-loop voltage gain
P
o
= 1 W; (see Fig.16)
25
26
27
dB
SVRR
supply voltage ripple rejection
R
s
= 0
; V
ripple
= 2 V
(p-p)
;
(see Fig.17)
on/mute
50
65
-
dB
standby
90
-
dB
CMRR
common mode rejection ratio
f = 1 kHz; R
s
= 0
-
80
-
dB
Z
i
differential input impedance
90
120
150
k
Z
i
mismatch in input impedance
-
1
-
%
V
SE-BTL
SE to BTL switch voltage level
note 3
-
3
-
V
V
out
output voltage mute (RMS value)
V
i
= 1 V (RMS)
-
95
150
V
V
n(o)
noise output voltage
on; R
s
= 0
; note 4
-
95
150
V
on; R
s
= 10 k
; note 4
-
100
-
V
mute; note 5
-
90
150
V
cs
channel separation
R
s
= 0
; P
o
= 25 W
50
70
-
dB
G
v
channel unbalance
-
-
1
dB
2004 Jan 27
10
Philips Semiconductors
Product specification
High efficiency 2
40 W / 2
stereo car radio power amplifier
TDA1565TH
TEST AND APPLICATION INFORMATION
handbook, full pagewidth
MHC603
19
CIN
25 k
60
k
60
k
60
k
60
k
Vref
OUT2
-
OUT2
+
7
8
CSE
16
18
IN1
-
17
IN1
+
OUT1
+
OUT1
-
4
3
STANDBY
LOGIC
CLIP AND
DIAGNOSTIC
2
15
MODE
DIAG
5
GND1
6
GND2
VP2
11
VP1
20
TDA1565TH
10
F
2200
F
220 nF
0.5Rs
220 nF
0.5Rs
+
-
+
-
VMODE
VP
Vlogic
Rpu
13
IN2
-
14
IN2
+
220 nF
0.5Rs
100 nF
100 nF
3.9
2
3.9
100 nF
100 nF
3.9
2
3.9
10 k
220 nF
0.5Rs
+
-
+
-
220 nF
2200
F
signal ground
power ground
Fig.7 Application diagram.
Connect Boucherot (IEC-60268) filter to pin 4 and pin 7 using the shortest possible connection.
R
s
= Source resistance.
2004 Jan 27
11
Philips Semiconductors
Product specification
High efficiency 2
40 W / 2
stereo car radio power amplifier
TDA1565TH
handbook, full pagewidth
MHC587
TDA1564TH/65TH
GND
AGND
DIAG
22
F
220 nF
1000
F
2200
F
22
F
10
F
IN2
IN1
VP
on
off
Out1
Out2
Fig.8 PCB layout (component side) for the application shown in Fig.7.
a. Top silk screen (top view).
b. Top copper track (top view).
2004 Jan 27
12
Philips Semiconductors
Product specification
High efficiency 2
40 W / 2
stereo car radio power amplifier
TDA1565TH
handbook, full pagewidth
MHC588
100 nF
220 nF
220 nF
220 nF
3E9
3E9
3E9
100 nF
100 nF
3E9
100 nF
150 k
51 k
2.7
k
Fig.9 PCB layout (soldering side) for the application shown in Fig.7.
a. Bottom silk screen (top view; legend reversed).
b. Bottom copper track (top view).
2004 Jan 27
13
Philips Semiconductors
Product specification
High efficiency 2
40 W / 2
stereo car radio power amplifier
TDA1565TH
handbook, halfpage
0
10
30
50
0
20
10
20
30
40
MHC589
(1)
(2)
Po (W)
P
(W)
Fig.10 Power dissipation as a function of output
power; sine wave driven.
Input signal 1 kHz, sinusoidal; V
P
= 14.4 V; R
L
= 2
.
(1) For a conventional BTL amplifier.
(2) For TDA1565TH.
handbook, halfpage
0
10
40
0
10
20
30
2
4
6
8
MHC590
(1)
(2)
Po (W)
P
(W)
Fig.11 Power dissipation as a function of output
power; pink noise through IEC-60268 filter.
Input signal IEC 268 filtered pink noise; V
P
= 14.4 V; R
L
= 2
.
(1) For a conventional BTL amplifier.
(2) For TDA1565TH.
430
input
output
330
3.3
k
3.3
k
10
k
91
nF
68
nF
470 nF
2.2
F
2.2
F
MGC428
Fig.12 IEC-60268 filter.
2004 Jan 27
14
Philips Semiconductors
Product specification
High efficiency 2
40 W / 2
stereo car radio power amplifier
TDA1565TH
handbook, full pagewidth
MHC604
19
CIN
25 k
60
k
60
k
60
k
60
k
Vref
OUT2
-
OUT2
+
7
8
CSE
16
18
IN1
-
17
IN1
+
OUT1
+
OUT1
-
4
3
VP2
11
VP1
20
TDA1565TH
10
F
2200
F
220 nF
220 nF
IEC-60268
FILTER
pink
noise
+
-
+
-
VP
13
IN2
-
14
IN2
+
220 nF
100 nF
100 nF
3.9
2
3.9
100 nF
100 nF
3.9
2
3.9
220 nF
+
-
+
-
220 nF
2200
F
signal ground
power ground
INTERFACE
2
15
MODE
DIAG
DIAG
MODE
5
GND1
6
GND2
VMODE
Vlogic
Rpu
Fig.13 Test and application diagram for dissipation measurements with a simulated music signal (pink noise).
2004 Jan 27
15
Philips Semiconductors
Product specification
High efficiency 2
40 W / 2
stereo car radio power amplifier
TDA1565TH
handbook, halfpage
0
150
100
50
0
8
24
16
MHC598
VP (V)
IP
(mA)
Fig.14 Quiescent current as a function of V
P
.
V
MODE
= 5 V; R
L
=
.
handbook, halfpage
0
200
100
150
50
0
1
5
MHC599
2
3
(3)
(2)
(1)
4
VMODE (V)
IP
(mA)
Fig.15 I
P
as a function of V
MODE
.
V
IN
= 5 mV; V
P
= 14.4 V.
(1) Standby.
(2) Mute.
(3) Operating.
handbook, halfpage
20
28
22
24
26
MHC597
10
10
2
10
3
10
4
10
5
10
6
Gv
(dB)
f (Hz)
Fig.16 Gain as a function of frequency.
V
IN
= 100 mV.
handbook, halfpage
-
80
-
60
-
40
-
20
0
MHC591
10
10
2
10
3
10
4
10
5
f (Hz)
SVRR
(dB)
Fig.17 SVRR as a function of frequency.
(V
ripple
= 2 V (p-p).
2004 Jan 27
16
Philips Semiconductors
Product specification
High efficiency 2
40 W / 2
stereo car radio power amplifier
TDA1565TH
handbook, halfpage
-
90
-
70
-
50
-
30
-
10
MHC592
10
10
2
10
3
10
4
10
5
f (Hz)
cs
(dB)
(1)
(2)
Fig.18 Channel separation as a function of
frequency.
(1) P
o
= 1 W.
(2) P
o
= 10 W.
handbook, halfpage
0
8
24
0.8
0.6
0.2
0
0.4
16
MHC596
(2)
(1)
Po
(W)
VP (V)
Fig.19 AC operation as a function of V
P
.
V
IN
= 50 mV.
(1) Low supply mute.
(2) Load dump.
2004 Jan 27
17
Philips Semiconductors
Product specification
High efficiency 2
40 W / 2
stereo car radio power amplifier
TDA1565TH
handbook, full pagewidth
MHC594
10
2
10
1
10
-
1
0.1
1
10
5
2
0.5
0.2
50
20
10
-
2
(3)
THD
+
noise
(%)
Po (W)
(2)
(1)
Fig.20 THD + noise as a function of P
o
.
R
L
= 2
.
(1) 10 kHz.
(2) 1 kHz.
(3) 100 Hz.
2004 Jan 27
18
Philips Semiconductors
Product specification
High efficiency 2
40 W / 2
stereo car radio power amplifier
TDA1565TH
handbook, full pagewidth
MHC593
10
1
10
-
1
10
-
2
10
10
2
10
3
10
4
10
5
(1)
(2)
THD
+
noise
(%)
f (Hz)
Fig.21 THD + noise as a function of frequency.
R
L
= 2
.
(1) P
o
= 10 W.
(2) P
o
= 1 W.
2004 Jan 27
19
Philips Semiconductors
Product specification
High efficiency 2
40 W / 2
stereo car radio power amplifier
TDA1565TH
handbook, full pagewidth
MBH691
0
1
2
t (ms)
3
1/2 VP
1/2 VP
0
-
VP
VP
VP
0
VP
Vload
Vmaster
Vslave
0
Fig.22 Output waveforms.
Also see Fig.7.
V
load
= (V
OUT2+
)
-
(V
OUT2
-
) or (V
OUT1+
)
-
(V
OUT1
-
).
V
master
= V
OUT2+
or V
OUT1
-
.
V
slave
= V
OUT2
-
or V
OUT1+
.
2004 Jan 27
20
Philips Semiconductors
Product specification
High efficiency 2
40 W / 2
stereo car radio power amplifier
TDA1565TH
Application notes
A
DVANTAGES OF HIGH EFFICIENCY
1. Power conversion improvement (power supply): The
fact that the reduction of power dissipation is directly
related to a reduction of supply current is often
neglected. One advantage is voltage is dropped over
the whole supply chain. Another advantage is reduced
stress for the coil in the supply line. Even the adapter
or supply circuit is cooler due to the reduced
dissipation of heat in the whole chain because more
supply current will be converted into output power.
2. Power dissipation reduction: This is the best known
advantage of high efficiency amplifiers.
3. Heatsink size reduction. The size of heatsink for a
conventional amplifier can be reduced by
approximately 50 % at V
P
= 14.4 V when the
TDA1565TH is used. In this case, the maximum
heatsink temperature remains the same.
4. Heatsink temperature reduction: The power
dissipation and the thermal resistance of the heatsink
determine the rise in heatsink temperature.
If the same sized heatsink of a conventional amplifier is
used, the maximum heatsink temperature and the
maximum junction temperature both decrease, which
extends the life of the semiconductor device; the maximum
power dissipation for music, or similar input signals
decreases by 40 %.
It is clear that the use of the TDA1565TH saves a
significant amount of energy. The maximum supply current
decreases by approximately 32 %, which reduces the
power dissipation in the amplifier as well as in the whole
supply chain. The TDA1565TH allows the size of the
heatsink to be reduced by approximately 50 %, or the
temperature of the heatsink to be reduced by 40 % if the
size of the heatsink is unchanged.
A
DVANTAGE OF THE CONCEPT USED BY
TDA1565TH
Because the TDA1565TH uses a single-ended capacitor
to create a non-dissipating half supply voltage, it is highly
efficient under all conditions. Other design concepts rely
on the fact that both input signals have the same amplitude
and phase. Using a SE capacitor prevents any adverse
affects on efficiency that could result from any form of
processing that may have been applied to the input
signals, such as amplitude difference, phase shift or
delays between both input signals, or other DSP
processing.
handbook, halfpage
MHC610
Supply
current
reduction of
32%
Heatsink
size
reduction of
50%
Same heatsink
size
Same junction
temperature
Heatsink
temperature
reduction of
40%
Power
dissipation
reduction of 40%
at Po = 3.2 W
VP = 14.4 V
choice
Fig.23 Heatsink design.
2004 Jan 27
21
Philips Semiconductors
Product specification
High efficiency 2
40 W / 2
stereo car radio power amplifier
TDA1565TH
INTERNAL PIN CONFIGURATIONS
PIN
NAME
EQUIVALENT CIRCUIT
2
MODE
3, 8
OUT1+, OUT2
-
4, 7
OUT1+, OUT2
-
15
DIAG
MHC607
2
MHC608
16
VP1, VP2
3, 8
MHC609
16
VP1, VP2
4, 7
MGW264
VP2
15
2004 Jan 27
22
Philips Semiconductors
Product specification
High efficiency 2
40 W / 2
stereo car radio power amplifier
TDA1565TH
16
CSE
17, 18,
13, 14,
19
IN1+, IN1
-
IN2+, IN2
-
CIN
PIN
NAME
EQUIVALENT CIRCUIT
MHC606
16
VP2
MHC605
13, 14, 17, 18
19
VP1, VP2
VP1, VP2
2004 Jan 27
23
Philips Semiconductors
Product specification
High efficiency 2
40 W / 2
stereo car radio power amplifier
TDA1565TH
PACKAGE OUTLINE
UNIT
A4
(1)
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
mm
+
0.08
-
0.04
3.5
0.35
DIMENSIONS (mm are the original dimensions)
Notes
1. Limits per individual lead.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
SOT418-3
0
5
10 mm
scale
HSOP20: plastic, heatsink small outline package; 20 leads; low stand-off height
SOT418-3
A
max.
detail X
A2
3.5
3.2
D2
1.1
0.9
HE
14.5
13.9
Lp
1.1
0.8
Q
1.7
1.5
2.5
2.0
v
0.25
w
0.25
y
Z
8
0
0.07
x
0.03
D1
13.0
12.6
E1
6.2
5.8
E2
2.9
2.5
bp
c
0.32
0.23
e
1.27
D
(2)
16.0
15.8
E
(2)
11.1
10.9
0.53
0.40
A3
A4
A2
(A3)
Lp
A
Q
D
y
x
HE
E
c
v
M
A
X
A
bp
w
M
Z
D1
D2
E2
E1
e
20
11
1
10
pin 1 index
02-02-12
03-07-23
2004 Jan 27
24
Philips Semiconductors
Product specification
High efficiency 2
40 W / 2
stereo car radio power amplifier
TDA1565TH
SOLDERING
Introduction to soldering surface mount packages
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our
"Data Handbook IC26; Integrated Circuit Packages"
(document order number 9398 652 90011).
There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering can still be used for
certain surface mount ICs, but it is not suitable for fine pitch
SMDs. In these situations reflow soldering is
recommended.
Reflow soldering
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
Driven by legislation and environmental forces the
worldwide use of lead-free solder pastes is increasing.
Several methods exist for reflowing; for example,
convection or convection/infrared heating in a conveyor
type oven. Throughput times (preheating, soldering and
cooling) vary between 100 and 200 seconds depending
on heating method.
Typical reflow peak temperatures range from
215 to 270
C depending on solder paste material. The
top-surface temperature of the packages should
preferably be kept:
below 225
C (SnPb process) or below 245
C (Pb-free
process)
for all BGA, HTSSON-T and SSOP-T packages
for packages with a thickness
2.5 mm
for packages with a thickness < 2.5 mm and a
volume
350 mm
3
so called thick/large packages.
below 240
C (SnPb process) or below 260
C (Pb-free
process) for packages with a thickness < 2.5 mm and a
volume < 350 mm
3
so called small/thin packages.
Moisture sensitivity precautions, as indicated on packing,
must be respected at all times.
Wave soldering
Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.
To overcome these problems the double-wave soldering
method was specifically developed.
If wave soldering is used the following conditions must be
observed for optimal results:
Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
For packages with leads on two sides and a pitch (e):
larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
The footprint must incorporate solder thieves at the
downstream end.
For packages with leads on four sides, the footprint must
be placed at a 45
angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Typical dwell time of the leads in the wave ranges from
3 to 4 seconds at 250
C or 265
C, depending on solder
material applied, SnPb or Pb-free respectively.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Manual soldering
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300
C.
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320
C.
2004 Jan 27
25
Philips Semiconductors
Product specification
High efficiency 2
40 W / 2
stereo car radio power amplifier
TDA1565TH
Suitability of surface mount IC packages for wave and reflow soldering methods
Notes
1. For more detailed information on the BGA packages refer to the
"(LF)BGA Application Note" (AN01026); order a copy
from your Philips Semiconductors sales office.
2. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the
"Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods".
3. These transparent plastic packages are extremely sensitive to reflow soldering conditions and must on no account
be processed through more than one soldering cycle or subjected to infrared reflow soldering with peak temperature
exceeding 217
C
10
C measured in the atmosphere of the reflow oven. The package body peak temperature
must be kept as low as possible.
4. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder
cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side,
the solder might be deposited on the heatsink surface.
5. If wave soldering is considered, then the package must be placed at a 45
angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
6. Wave soldering is suitable for LQFP, TQFP and QFP packages with a pitch (e) larger than 0.8 mm; it is definitely not
suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
7. Wave soldering is suitable for SSOP, TSSOP, VSO and VSSOP packages with a pitch (e) equal to or larger than
0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
8. Image sensor packages in principle should not be soldered. They are mounted in sockets or delivered pre-mounted
on flex foil. However, the image sensor package can be mounted by the client on a flex foil by using a hot bar
soldering process. The appropriate soldering profile can be provided on request.
9. Hot bar or manual soldering is suitable for PMFP packages.
PACKAGE
(1)
SOLDERING METHOD
WAVE
REFLOW
(2)
BGA, HTSSON..T
(3)
, LBGA, LFBGA, SQFP, SSOP..T
(3)
, TFBGA,
USON, VFBGA
not suitable
suitable
DHVQFN, HBCC, HBGA, HLQFP, HSO, HSOP, HSQFP, HSSON,
HTQFP, HTSSOP, HVQFN, HVSON, SMS
not suitable
(4)
suitable
PLCC
(5)
, SO, SOJ
suitable
suitable
LQFP, QFP, TQFP
not recommended
(5)(6)
suitable
SSOP, TSSOP, VSO, VSSOP
not recommended
(7)
suitable
CWQCCN..L
(8)
, PMFP
(9)
, WQCCN..L
(8)
not suitable
not suitable
2004 Jan 27
26
Philips Semiconductors
Product specification
High efficiency 2
40 W / 2
stereo car radio power amplifier
TDA1565TH
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
LEVEL
DATA SHEET
STATUS
(1)
PRODUCT
STATUS
(2)(3)
DEFINITION
I
Objective data
Development
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
DEFINITIONS
Short-form specification
The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition
Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information
Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications
These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status `Production'), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
Koninklijke Philips Electronics N.V. 2004
SCA76
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Philips Semiconductors a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands
R32/02/pp
27
Date of release:
2004 Jan 27
Document order number:
9397 750 12581
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