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Электронный компонент: TDA8042M

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DATA SHEET
Product specification
File under Integrated Circuits, IC02
1997 Apr 11
INTEGRATED CIRCUITS
TDA8042M
Quadrature demodulator
1997 Apr 11
2
Philips Semiconductors
Product specification
Quadrature demodulator
TDA8042M
FEATURES
5 V supply voltage
Internal voltage reference
350 to 650 MHz input frequency range
On-chip 0
and 90
phase shifter
Symbol rate up to 45 Msymbols/s
High input sensitivity
Built-in voltage stabilizer
AGC amplifier with 21 dB control range
AGC detector.
APPLICATION
Binary Phase-Shift Keying (BPSK) and Quadrature
Phase-Shift Keying (QPSK) demodulation.
GENERAL DESCRIPTION
The TDA8042M is a monolitic bipolar IC dedicated for
BPSK and QPSK demodulation. It is designed to be used
together with the TDA8043 as part of a complete
BPSK/QPSK satellite demodulator and decoder.
The bandwidth of the TDA8042M allows symbol rates up
to 45 Msymbols/s. It includes two matched mixers, an IF
gain controlled amplifier, a symmetrical oscillator, a 0
/90
phase shifter, two low-pass filters and two matched
baseband amplifiers.
The high input sensitivity makes interfacing with various
sources easy. The input sensitivity can be adjusted by
means of an internal AGC amplifier.
The oscillator operates at half the IF frequency. The local
oscillator signal driving the mixers is made by doubling the
oscillator frequency by an internal frequency multiplier.
The oscillator frequency can be set by the appropriate
external LC tank circuit. The internal wideband phase
shifter provides two oscillator signals which are
90 degrees out of phase to drive the mixers.
An AGC detector at the I and Q outputs makes it possible
to keep the I and Q signals at a constant level to drive the
analog-to-digital converters of the TDA8043.
QUICK REFERENCE DATA
ORDERING INFORMATION
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CC
supply voltage
4.75
5.0
5.25
V
I
CC
supply current
V
CC
= 5.0 V
54
67.5
81
mA
V
i(RF)
operating input level
-
57
-
dB
V
f
i(RF)
RF input signal frequency
350
-
650
MHz
V
olQ(p-p)
I and Q output voltage (peak-to-peak value)
-
0.8
-
V
E
(I-Q)
phase matching error between I and Q channels
-
0.7
2
deg
E
G(I-Q)
gain matching error between I and Q channels
-
0.15
0.8
dB
G
tilt
gain tilt error between I and Q channels
-
0.3
0.5
dB
TYPE
NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
TDA8042M
SSOP20
plastic shrink small outline package; 20 leads; body width 4.4 mm
SOT266-1
1997 Apr 11
3
Philips Semiconductors
Product specification
Quadrature demodulator
TDA8042M
BLOCK DIAGRAM
Fig.1 Block diagram.
handbook, full pagewidth
MBH968
DET
I
VOLTAGE
REFERENCE
1
2
10
3
5
8
9
6
7
4
Q
90
0
2
VCO
32
20
19
11
14
18
16
15
13
12
17
IDET
VTH
GND1
GND1
VAGC
VCC1
IOUT
OSCDIS
GND2
OSCA
IFA
OSCB
IFB
GND1
VCC2
FDIV(A)
QOUT
FDIV(B)
GND1
VCC1
TDA8042M
1997 Apr 11
4
Philips Semiconductors
Product specification
Quadrature demodulator
TDA8042M
PINNING
SYMBOL
PIN
DESCRIPTION
IDET
1
AGC detector output signal
GND1
2
ground
VAGC
3
gain control input voltage
IOUT
4
I channel amplifier output
GND2
5
ground
IFA
6
IF input A
IFB
7
IF input B
V
CC2
8
supply voltage 2
QOUT
9
Q channel amplifier output
GND1
10
ground
V
CC1
11
supply voltage 1
FDIV(B)
12
prescaler output B
FDIV(A)
13
prescaler output A
GND1
14
ground
OSCB
15
oscillator tank circuit B
OSCA
16
oscillator tank circuit A
OSCDIS
17
oscillator disable input
V
CC1
18
supply voltage 1
GND1
19
ground
VTH
20
AGC threshold voltage input
Fig.2 Pin configuration.
handbook, halfpage
TDA8042M
MBH967
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
IDET
VTH
GND1
GND1
VAGC
VCC1
IOUT
OSCDIS
GND2
OSCA
IFA
OSCB
IFB
GND1
VCC2
FDIV(A)
QOUT
FDIV(B)
GND1
VCC1
1997 Apr 11
5
Philips Semiconductors
Product specification
Quadrature demodulator
TDA8042M
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. The operating ambient temperature can be extended up to +85
C providing the supply voltage remains lower or
equal to 5.2 V in order to maintain the junction temperature below 150
C.
QUALITY SPECIFICATION
All pins withstand the ESD test in accordance with
"UZW-BO/FQ-A302 (human body model)" and with
"UZW-BO/FQ-B302 (machine model)". These numbers can be found in the "Quality reference Handbook". The handbook
can be ordered using the code 9397 750 00192.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
CC
supply voltage
-
0.3
+6.0
V
V
i
input voltage on all pins
-
0.3
V
CC
V
P
tot
total power dissipation
-
470
mW
T
stg
IC storage temperature
-
55
+150
C
T
j
junction temperature
-
+150
C
T
amb
operating ambient temperature
0
+70
(1)
C
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient in free air
120
K/W
1997 Apr 11
6
Philips Semiconductors
Product specification
Quadrature demodulator
TDA8042M
CHARACTERISTICS
V
CC
= 5 V; T
amb
= 25
C; R
L(IQ)
= 1 k
; measured in application circuit of Fig.4; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supply
V
CC1
supply voltage
4.75
5.0
5.25
V
V
CC2
supply voltage
4.75
5.0
5.25
V
I
CC1
supply current
V
CC1
= V
CC2
= 5.0 V 41
51
61
mA
I
CC2
supply current
V
CC1
= V
CC2
= 5.0 V 13
16.5
20
mA
AGC
G
CR
gain control range
21
29
-
dB
G
VAGC
voltage gain control at pin 3
note 1
input level = V
i(RF)min
0.5
-
2
V
input level = V
i(RF)max
3.5
-
4.5
V
R
iVAGC
input resistance at pin 3
-
20
-
k
V
th
AGC threshold voltage
note 2
V
o
= 1.6 V (peak-to-peak value)
-
3.6
-
V
V
o
= 0.8 V (peak-to-peak value)
-
2.4
-
V
V
o
= 0.4 V (peak-to-peak value)
-
1.8
-
V
R
iVTH
VTH input resistance
-
10
-
k
I
det
maximum AGC detector output current
(absolute value)
note 3
-
1
-
mA
QPSK demodulator
f
i(RF)
RF input signal frequency
350
-
650
MHz
R
i(RF)
RF input impedance (resistive part)
f
i(RF)
= 480 MHz
-
50
-
X
i(RF)
RF input impedance (reactive part)
f
i(RF)
= 480 MHz
-
19
-
V
i(RF)
operating RF input level
note 1
57
-
78
dB
V
E
(I-Q)
phase matching error between I and Q
channels
note 4
-
0.7
2
deg
E
G(I-Q)
gain matching error between I and Q channels note 5
-
0.15
0.8
dB
G
tilt
gain tilt error between I and Q channels
note 6
-
0.3
0.5
dB
F
DSB noise figure
source
impedance = 50
;
note 7
-
13
17
dB
d
3(IQ)
third-order intermodulation distortion in I and
Q channels
note 8
-
50
-
dB
1997 Apr 11
7
Philips Semiconductors
Product specification
Quadrature demodulator
TDA8042M
Notes
1. The voltage gain control range (G
VAGC
) is defined as the DC voltage to be applied on pin 3 to get a signal level of
800 mV (peak-to-peak value) at I and Q outputs.
The lowest control voltage corresponds to the highest sensitivity and gain.
2. V
th
is the level of voltage to be applied at pin 20 to get a current I
det
of 0.5 mA at pin 1. This voltage depends on the
amplitude of the signal at I and Q outputs.
The AGC threshold voltage can be set by a resistive voltage divider connected at pin 20. Without the external
resistors V
th
is set at a value close to 2.35 V.
3. The current I
det
increases when the output level (at pins 4 and 9) increases above the value set by the adjustment of
V
th
.
4. The phase error is defined as the phase quadrature imbalance between I and Q channels.
5. The gain error is defined as the phase quadrature imbalance between I and Q channels.
6. The tilt is defined as the difference between the maximum and the minimum channel gain measured in a frequency
band of
30 MHz around f
i(RF)
. The specified tilt is the maximum tilt value found in one of the I and Q channels
.
Oscillator
f
osc
oscillator frequency
note 9
175
-
325
MHz
f
osc
frequency drift
note 10
-
-
500
kHz
V
CC
=
5%
-
-
100
kHz
N
osc
oscillator phase noise
measured10 kHz
from f
osc
; note 11
-
-
91
dBc/Hz
V
osc(dis)
oscillator disable voltage at pin 17
oscillator disabled
-
-
1.0
V
oscillator enabled
4.0
-
-
V
Prescaler
V
OH
HIGH level output voltage
note 12
4.0
-
-
V
V
OL
LOW level output voltage
note 12
-
-
3.35
V
output duty cycle
40
50
60
%
DIV
spu(IQ)
output spurious voltage at I and Q outputs
note 13
-
-
50
-
dB
I and Q internal filters
B
-
1
bandwidth for 1 dB attenuation
30
-
-
MHz
B
-
30
bandwidth for 30 dB attenuation
-
450
-
MHz
I and Q output amplifiers
V
O(IQ)(DC)
I and Q channels DC output voltage
-
2.45
-
V
V
o(IQ)(p-p)
I and Q channels output voltage
(peak-to-peak value)
note 14
-
0.8
-
V
V
clip(p-p)
I and Q output clipping level
(peak-to-peak value)
1.8
V
R
L(IQ)
I and Q channels output load resistance
note 15
500
-
-
R
o(IQ)
I and Q channels output resistance
-
67
-
ct(I-Q)
crosstalk between I and Q channels
30
-
-
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
1997 Apr 11
8
Philips Semiconductors
Product specification
Quadrature demodulator
TDA8042M
7. The specified noise figure is the maximum value obtained from I and Q channels noise measurement. The figure
holds for the maximum gain (G
VAGC
= 0.5 V).
8. The specified intermodulation distortion is the minimum value obtained from intermodulation measurements in I and
Q channels. The specified value is the minimum distance between wanted signal and intermodulation products
measured at the output for a wanted output level of 0.8 V (peak-to-peak value).
9. The oscillator is tuned with an appropriate tank circuit designed for each frequency limit.
10. The drift of the oscillator frequency with temperature is defined for
T
amb
= 25
C. It is measured in the application
circuit (see Fig.4) with a temperature compensated tank circuit. The temperature compensation used for this
measurement is realized using the application which is depicted in Fig.3.
11. The phase noise is measured at the oscillator frequency (= 240 MHz). Due to the internal frequency doubler the
phase noise at the input of the mixers will be 6 dB worse.
12. Measured with a high impedance load (R
L
> 5 k
) connected at pins 12 and 13.
13. The prescaler output spurious voltage at I and Q outputs are measured with respect to an output level of 800 mV
(peak-to-peak value).
14. Measured with an input signal f
i(RF)
+ 500 kHz (i.e. 480.5 MHz).
15. The load should be AC-coupled.
Fig.3 Temperature compensation circuit.
handbook, full pagewidth
MBH969
to pin 15
TOKO ref.:
100 082 93278
to pin 16
8.2 pF
NP0
2.2 pF
NP0
6 pF
N470
1 pF
N470
1997 Apr 11
9
Philips Semiconductors
Product specification
Quadrature demodulator
TDA8042M
APPLICATION INFORMATION
Fig.4 Application diagram.
handbook, full pagewidth
MBH970
TDA8042M
100
nF
100 nF
100
nF
10 nF
10 nF
470
5 V
100
nF
100
nF
5 V
5 V
maximum
100
nF
VTH
GND1
VCC1
OSCDIS
OSCA
OSCB
GND1
FDIV(A)
FDIV(B)
VCC1
1 k
50
5 k
5 V
100
nF
100
nF
1 k
1 k
11
10
9
8
7
12
to
prescaler
10 nF
5
2
1
4
3
6
100 nF
10 nF
18 pF
470
1 k
13
14
19
20
18
17
16
15
TOKO ref.:
100 082 93278
+
IDET
GND1
VAGC
5 V
IOUT
GND2
IFA
IFB
VCC2
QOUT
5 V
GND1
ANZAC
NOT ON THE TESTBOARD
H-183-4
RF
test point
1997 Apr 11
10
Philips Semiconductors
Product specification
Quadrature demodulator
TDA8042M
PACKAGE OUTLINE
UNIT
A
1
A
2
A
3
b
p
c
D
(1)
E
(1)
(1)
e
H
E
L
L
p
Q
Z
y
w
v
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
mm
0.15
0
1.4
1.2
0.32
0.20
0.20
0.13
6.6
6.4
4.5
4.3
0.65
1.0
0.2
6.6
6.2
0.65
0.45
0.48
0.18
10
0
o
o
0.13
0.1
DIMENSIONS (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.
0.75
0.45
SOT266-1
90-04-05
95-02-25
w
M
A
A
1
A
2
b
p
D
H
E
L
p
Q
detail X
E
Z
e
c
L
v
M
A
X
(A )
3
A
y
0.25
1
10
20
11
pin 1 index
0
2.5
5 mm
scale
SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm
SOT266-1
A
max.
1.5
1997 Apr 11
11
Philips Semiconductors
Product specification
Quadrature demodulator
TDA8042M
SOLDERING
Introduction
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our
"IC Package Databook" (order code 9398 652 90011).
Reflow soldering
Reflow soldering techniques are suitable for all SSOP
packages.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
Several techniques exist for reflowing; for example,
thermal conduction by heated belt. Dwell times vary
between 50 and 300 seconds depending on heating
method. Typical reflow temperatures range from
215 to 250
C.
Preheating is necessary to dry the paste and evaporate
the binding agent. Preheating duration: 45 minutes at
45
C.
Wave soldering
Wave soldering is not recommended for SSOP packages.
This is because of the likelihood of solder bridging due to
closely-spaced leads and the possibility of incomplete
solder penetration in multi-lead devices.
If wave soldering cannot be avoided, the following
conditions must be observed:
A double-wave (a turbulent wave with high upward
pressure followed by a smooth laminar wave)
soldering technique should be used.
The longitudinal axis of the package footprint must
be parallel to the solder flow and must incorporate
solder thieves at the downstream end.
Even with these conditions, only consider wave
soldering SSOP packages that have a body width of
4.4 mm, that is SSOP16 (SOT369-1) or
SSOP20 (SOT266-1)
.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Maximum permissible solder temperature is 260
C, and
maximum duration of package immersion in solder is
10 seconds, if cooled to less than 150
C within
6 seconds. Typical dwell time is 4 seconds at 250
C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Repairing soldered joints
Fix the component by first soldering two diagonally-
opposite end leads. Use only a low voltage soldering iron
(less than 24 V) applied to the flat part of the lead. Contact
time must be limited to 10 seconds at up to 300
C. When
using a dedicated tool, all other leads can be soldered in
one operation within 2 to 5 seconds between
270 and 320
C.
1997 Apr 11
12
Philips Semiconductors
Product specification
Quadrature demodulator
TDA8042M
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
1997 Apr 11
13
Philips Semiconductors
Product specification
Quadrature demodulator
TDA8042M
NOTES
1997 Apr 11
14
Philips Semiconductors
Product specification
Quadrature demodulator
TDA8042M
NOTES
1997 Apr 11
15
Philips Semiconductors
Product specification
Quadrature demodulator
TDA8042M
NOTES
Internet: http://www.semiconductors.philips.com
Philips Semiconductors a worldwide company
Philips Electronics N.V. 1997
SCA54
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Czech Republic: see Austria
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,
Tel. +45 32 88 2636, Fax. +45 31 57 0044
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615800, Fax. +358 9 61580920
France: 4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex,
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427
Germany: Hammerbrookstrae 69, D-20097 HAMBURG,
Tel. +49 40 23 53 60, Fax. +49 40 23 536 300
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,
Tel. +30 1 4894 339/239, Fax. +30 1 4814 240
Hungary: see Austria
India: Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd.
Worli, MUMBAI 400 018, Tel. +91 22 4938 541, Fax. +91 22 4938 722
Indonesia: see Singapore
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,
Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Middle East: see Italy
Printed in The Netherlands
547047/1200/01/pp16
Date of release: 1997 Apr 11
Document order number:
9397 750 00909