2002 Jan 14

Philips Semiconductors

Preliminary specification

44 W into 4

or 4

75 W into 2

quad BTL car radio power amplifier

TDA8591J

CONTENTS

FEATURES

GENERAL DESCRIPTION

ORDERING INFORMATION

QUICK REFERENCE DATA

BLOCK DIAGRAM

PINNING

FUNCTIONAL DESCRIPTION

7.1

Diagnostic facility

7.2

Diagnostic output (DIAG)

7.3

Mute timer and single-pin mute control

7.4

Output power

LIMITING VALUES

THERMAL CHARACTERISTICS

QUALITY SPECIFICATION

DC CHARACTERISTICS

AC CHARACTERISTICS

12.1

Performance curves

TEST INFORMATION

13.1

Protection circuit testing

APPLICATION INFORMATION

14.1

Special attention for SMD input capacitors

14.2

Capacitors on outputs

14.3

EMC precautions

14.4

Offset detection

14.5

Channel selection

14.6

Detection of short-circuits

14.7

PCB layout

14.8

PCB design advice

PACKAGE OUTLINE

SOLDERING

16.1

Introduction to soldering through-hole mount
packages

16.2

Soldering by dipping or by solder wave

16.3

Manual soldering

16.4

Suitability of through-hole mount IC packages
for dipping and wave soldering methods

DATA SHEET STATUS

DEFINITIONS

DISCLAIMERS

2002 Jan 14

Philips Semiconductors

Preliminary specification

44 W into 4

or 4

75 W into 2

quad BTL car radio power amplifier

TDA8591J

FEATURES

Low quiescent current

Low distortion

Low output offset voltage

Soft thermal clipping to prevent audio holes

External mute timer for low start-up plop (also allows a
fast mute function)

High output power

Operating, mute and standby mode selection by two-pin
or single-pin operation

Diagnostic information available:

Dynamic Distortion Detection (DDD)

High temperature detection

Short-circuit detection

Detection of output offset due to leakage current at

the input

No switch-on/switch-off plops when switching between
standby and mute modes or between mute and
operating modes

Fast mute with supply voltage drops

Package with flexible leads

All outputs can withstand short-circuits to ground, to the
positive supply voltage and across the load

Pin CP can withstand short-circuits to its adjacent pins,
all other pins can withstand short-circuits to ground and
to the positive supply voltage

ESD protection on all pins

Thermal protection against junction temperatures
exceeding 150

Load dump protection

Protected against open ground pins (loss of ground) and
outputs short-circuited to supply ground

All negative outputs are protected against open supply
voltage and output short-circuited to supply voltage

Reverse-polarity safe.

GENERAL DESCRIPTION

The TDA8591J is a quad BTL audio power amplifier
comprising four independent amplifiers in Bridge Tied
Load (BTL) configuration. Each amplifier has a gain of
26 dB and supplies an output power of 75 W (EIAJ) into a
2

load. The TDA8591J has low quiescent current and is

primarily developed for car audio applications.

ORDERING INFORMATION

TYPE

NUMBER

PACKAGE

NAME

DESCRIPTION

VERSION

TDA8591J

DBS27P

plastic DIL-bent-SIL power package; 27 leads (lead length 7.7 mm)

SOT521-1

2002 Jan 14

Philips Semiconductors

Preliminary specification

44 W into 4

or 4

75 W into 2

quad BTL car radio power amplifier

TDA8591J

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

supply voltage

8.0

14.4

18.0

q(tot)

total quiescent current

120

200

290

stb

standby supply current

input impedance

output power

THD + N = 0.5%

= 4

= 2

THD + N = 10%

= 4

= 2

EAIJ values

= 4

41.5

= 2

output offset voltage

mute mode

DC operating mode

voltage gain

= 40 mV (RMS)

THD + N

total harmonic distortion
plus noise

= 1 W; f = 1 kHz; R

= 4

0.03

0.1

channel separation

= 40 mV (RMS); R

= 0

n(o)

noise output voltage

= 0

; see Fig.29

SVRR

supply voltage ripple
rejection

ripple

= 2 V (p-p); mute or

operating mode; R

= 0

;

see Fig.29

2002 Jan 14

Philips Semiconductors

Preliminary specification

44 W into 4

or 4

75 W into 2

quad BTL car radio power amplifier

TDA8591J

PINNING

SYMBOL

PIN

DESCRIPTION

power supply to channels 1 and 4

SGND

signal ground

OUT1

channel 1 negative output

PGND1

channel 1 power ground

OUT1+

channel 1 positive output

DIAG

diagnostic output

PGND2

channel 2 power ground

MUTE/ON

mode select input: mute/amplifier
operating (via mute timer)

OUT2+

channel 2 positive output

IN1

channel 1 input

OUT2

channel 2 negative output

IN2

channel 2 input

channel 2 power supply

charge pump capacitor

channel 3 power supply

IN3

channel 3 input

OUT3

channel 3 negative output

IN4

channel 4 input

OUT3+

channel 3 positive output

STBY

standby select input

PGND3

channel 3 power ground

CIN

common input voltage

OUT4+

channel 4 positive output

PGND4

channel 4 power ground

OUT4

channel 4 negative output

OFFCAP

offset detection capacitor

GNDHS

ground (heatsink of encapsulation)

handbook, halfpage

TDA8591J

MGW450

VP1

SGND

OUT1

PGND1

OUT1

DIAG

PGND2

MUTE/ON

OUT2

IN1

OUT2

IN2

VP2

VP3

IN3

OUT3

IN4

OUT3

STBY

PGND3

CIN

OUT4

PGND4

OUT4

OFFCAP

GNDHS

Fig.2 Pin configuration.

2002 Jan 14

Philips Semiconductors

Preliminary specification

44 W into 4

or 4

75 W into 2

quad BTL car radio power amplifier

TDA8591J

FUNCTIONAL DESCRIPTION

The TDA8591J is an audio power amplifier with four
independent Bridge Tied Load (BTL) amplifiers with high
output power and low distortion. The gain of each amplifier
is fixed at 26 dB. The TDA8591J has two-pin mode control
which allows the amplifiers to be switched to standby (off)
with the STBY pin, and the MUTE/ON pin to be used to
switch between mute mode (input signal suppressed) and
amplifier operating mode.

Special attention is paid to dynamic behaviour:

A fast mute that switches all amplifiers to mute mode at
low supply voltage and suppresses noise during engine
start

No plops when switching between standby and mute
modes

Slow offset change when switching from mute mode to
operating mode (can be adjusted by an external
capacitor)

A fast mute function by discharging the external mute
capacitor quickly

The following protection circuits are included to prevent
the IC from being damaged:

Thermal shutdown:

At junction temperature T

> 170

C, all power stages

are switched off to prevent a further increase in
temperature

Soft thermal clipping:

At junction temperature T

> 155

C, the gain reduces

as temperature increases, resulting in less output power
and decreasing temperature and therefore no thermal
shutdown (no break in the audio)

Short-circuit protection:

If a short-circuit to ground or supply voltage occurs at
one or more of the output pins, or across the load of one
or more of the channels, the following action occurs to
reduce power dissipation and case temperature
(see Figs 5 and 6):

All amplifiers switch off for approximately 20 ms

After 20 ms the amplifiers switch on again

If the short-circuit persists, the amplifiers switch off for

another 20 ms period and the action repeats

ESD protection:

Human body model 2000 V

Machine model 200 V

Protection against open ground pins and outputs
short-circuited to supply ground (see Fig.30)

All outputs protected are against open power supply
pins and outputs short-circuited to power supply voltage
(see Fig.31)

With a reversed polarity power supply an external diode
conducts and a fuse blows and therefore the reversed
polarity voltage will not damage the device (see Fig.32).

7.1

Diagnostic facility

A diagnostic facility is available from the status of pin DIAG
for the following conditions:

In normal operation, the level on the DIAG pin is
continuously HIGH (see Fig.3)

When a temperature pre-warning occurs due to the
junction temperature T

reaching 145

C, the DIAG pin

goes continuously LOW

When there is distortion over 2.5% because of clipping,
the DIAG pin has a pulsed output as shown in Fig.4

When a short-circuit is detected, the short-circuit
protection becomes active and DIAG goes continuously
LOW for the period of the short-circuit (see Figs 5 and 6)

With an extreme output offset, input leakage current
causes a DC output offset voltage and results in power
dissipation in the loudspeakers. Therefore, if the
DC output offset voltage of a bridge is larger than 2 V,
DIAG is pulled LOW to indicate an error condition.

The DIAG pin has an open-drain output to allow several
devices to be tied together. An external pull-up resistor is
needed.

2002 Jan 14

Philips Semiconductors

Preliminary specification

44 W into 4

or 4

75 W into 2

quad BTL car radio power amplifier

TDA8591J

handbook, halfpage

MGU489

amplifier

output

STBY

MUTE/ON

DIAG

play normal

mute

t (ms)

standby

operating

Fig.3

Diagnostic waveforms: standby, mute and
operating mode sequence.

Pull-up resistor = 47 k

handbook, halfpage

MGT605

normal

active

DDD

normal

amplifier

output

DIAG

t (ms)

Pull-up resistor = 47 k

Fig.4

Diagnostic waveforms: dynamic distortion
detection function.

handbook, halfpage

MGT604

amplifier

output

DIAG

short-circuit
across load

20 ms

t (ms)

Fig.5

Diagnostic waveforms: short-circuit across
load.

Pull-up resistor = 47 k

andbook, halfpage

MGU498

short to

GND

short to

amplifier

output

DIAG

GND

20 ms

t (ms)

Fig.6

Diagnostic waveforms: short-circuit to
V

pin or GND.

Pull-up resistor = 47 k

2002 Jan 14

Philips Semiconductors

Preliminary specification

44 W into 4

or 4

75 W into 2

quad BTL car radio power amplifier

TDA8591J

7.2

Diagnostic output (DIAG)

The internal circuit of the diagnostic open-drain output is
shown in Fig.7.

A pull-up resistor is required if the diagnostic output is
connected to a microcontroller. Figure 8 shows four
possible solutions for fault diagnosis.

Figures 8a and 8b show simple configurations. The output
offset diagnostic cannot trigger the microcontroller
because of the 4-diode stack, only the temperature,
short-circuit and dynamic distortion diagnostic will give an
input LOW level for the microcontroller.

In Fig.8c, the diagnostic output is connected to an external
level shifter. Now DIAG pin output can also generate an
input LOW level for the microcontroller.

Assuming that a microcontroller HIGH input level must be
equal to, or greater than 2 V, the following equations are
used to calculate values for resistors R1 and R2:

IN1

> 2 V and

where:

5 V is the pull-up supply voltage

is the forward voltage of a diode (0.6 V)

R1 and R2 are the resistors in the level shifter.

Using both equations:

thus R1 > 3.3 R2

Therefore, R1 can be 47 k

and R2 can be 10 k

The level shifter shown in Fig.8d is used as a 2-bit
analog-to-digital converter.

With reference to Figs 7 and 8c, the truth table in Table 1
can be made:

Table 1

Truth table.

IN1

5 V

-------------------------------

5 V

----------------------------------------

HIGH TEMPERATURE

OR SHORT-CIRCUIT OR

DDD

OFFSET

IN1

IN2

yes

don't care

handbook, halfpage

MGT610

DIAG

PGND

temperature diagnostic

short-circuit diagnostic

dynamic distortion detection

output offset diagnostic

Fig.7 Internal circuit diagnostic output pin DIAG.

2002 Jan 14

Philips Semiconductors

Preliminary specification

44 W into 4

or 4

75 W into 2

quad BTL car radio power amplifier

TDA8591J

7.3

Mute timer and single-pin mute control

The transition time from mute mode to operating mode can
be used to hide plops that occur during switching. This
transition time is determined by the value of the external
capacitor at the MUTE/ON input (see Fig.33). To
guarantee the mute suppression, the resistor value may
not be more than 15 k

. The switching can be controlled

by a transistor switch with an open-drain output or a
voltage output with a minimum high level of 5.5 V.

When controlling with an open-drain output, the high
voltage level also must be at least 5.5 V and should not be
clamped on a lower value by the ESD diode of the
microcontroller. If the minimum high voltage cannot be
guaranteed, an external open-drain transistor or switch to
ground can be used. Charging of the external capacitor at
the MUTE/ON input is done by an internal current source.

If muting is performed by the microcontroller, the mute
connection to the microcontroller can be omitted. The
mute on and off transitions during start-up and switch-off
are controlled by an internal push-pull current source and
the external capacitor at pin 8 (MUTE/ON).

Fast mute can be achieved by quickly discharging the
mute capacitor by means of an open-drain transistor
without a series resistor.

7.4

Output power

EIAJ power is a power rating which indicates the maximum
possible output power of a specific application at a nominal
supply voltage. The power losses caused by PCB layout,
copper area, connector block, coil, loudspeaker wires, etc.
depend on the applications.

Therefore, the EIAJ power is defined and measured at the
pins of the IC using the following test conditions:

The supply voltage is 14.4 V measured on the pins of
the TDA8591J

All channels are loaded with 4

and are driven

simultaneously

The input signal is a continuous (no burst) square wave:

V = 1 V (RMS); f = 1 kHz

RMS output power is measured immediately at the start
(cold heatsink) and after 1 minute of operation. The
mean value is the rated EIAJ power.

To have optimum output power performance, the external
heatsink should be chosen carefully. A small heatsink
causes a high junction temperature, resulting in an
increase of the drain-source on-state resistance (R

DSon

) of

the power amplifiers and a decrease of the maximum
output power.

The reason for using a square wave input signal for EIAJ
power measurement is illustrated in Fig.9.

Figure 9a shows a square wave signal with

Assuming this square wave is the output signal of an
amplifier, the EIAJ output power is given by

where:

= load resistor in

top

= maximum voltage across the load in V

f = frequency of the square wave in Hz

= rise time of the slope in s.

A sine wave has a lower slew rate than a square wave as
shown in Fig.9b, therefore EIAJ power measurement with
a sine wave will give a lower power value. The maximum
slew rate of a sine wave output signal is given by

where:

A = amplitude of the output sinewave in V

f = frequency of the output sinewave in Hz.

For a non-clipping sinewave output with amplitude
A = 13 V and frequency f = 1 kHz, the slew rate is

A faster slew rate can be obtained by increasing the
amplitude: for an amplitude of 28 V, the slew rate will
increase to 1.8

V/s. A supply voltage of V

= 14.4 V will

result in a clipped output with a shape similar to a square
wave but with a slower slew rate.

Figure 9c shows the dependency of P

EIAJ

on slew rate.

Using a square wave input signal, the EIAJ output power
is determined by the drop voltage and bandwidth of the
output stage.

slew rate

top

----------

EIAJ

top

-------------

8
3

---

top

slew rate

-------------------------------------------

out

t max

------------------

sin

(

)

(

)

t max

------------------------------------------------

out

t max

------------------

V/s

2002 Jan 14

Philips Semiconductors

Preliminary specification

44 W into 4

or 4

75 W into 2

quad BTL car radio power amplifier

TDA8591J

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Notes

1. Human body model: C = 100 pF; R

= 1500

; all pins have passed all tests to 2500 V to guarantee 2000 V,

according to

"General Quality Specification SNW-FQ-611D", class II, except pin GND, which passed 2200 V,

class Ia.

2. Machine model: C = 200 pF; R

= 10

; L = 0.75 mH.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

supply voltage

operating

not operating

+45

with load dump protection (see Fig.10)

DIAG

voltage on pin DIAG

OSM

non-repetitive peak output
current

ORM

repetitive peak output current

AC and DC short-circuit voltage

short-circuit of output pins across
loads and to ground or supply

reverse polarity voltage

1 ms

tot

total power dissipation

case

= 70

virtual junction temperature

150

stg

storage temperature

+150

amb

ambient temperature

+85

esd

electrostatic handling voltage

note 1

2000

note 2

200

handbook, halfpage

MGT601

VP
(V)

2.5 ms

47.5 ms

14.4

Fig.10 Load dump pulse definition.

2002 Jan 14

Philips Semiconductors

Preliminary specification

44 W into 4

or 4

75 W into 2

quad BTL car radio power amplifier

TDA8591J

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

th(j-a)

thermal resistance from junction to ambient

in free air

K/W

th(j-c)

thermal resistance from junction to case

see Fig.11

K/W

handbook, halfpage

2 K/W

0.5 K/W

2 K/W

virtual junction

OUT1

OUT2

OUT3

OUT4

case

MGT602

Fig.11 Equivalent thermal resistance network.

10 QUALITY SPECIFICATION

Quality according to

"SNW-FQ-611E".

11 DC CHARACTERISTICS
T

amb

= 25

C; R

; V

= V

= 14.4 V; measured in the circuit of Fig.29; unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Supplies

supply voltage

8.0

14.4

18.0

q(tot)

total quiescent current

120

200

290

stb

standby current

DC output voltage

7.2

P(mute)

low supply voltage mute

operating to mute mode

6.0

7.0

8.0

mute to operating mode

6.3

7.0

8.5

P(mute)(hys)

low supply voltage mute
hysteresis

0.4

output offset voltage

mute mode; V

MUTE/ON

= 0 V

operating mode; V

MUTE/ON

= 5 V

2002 Jan 14

Philips Semiconductors

Preliminary specification

44 W into 4

or 4

75 W into 2

quad BTL car radio power amplifier

TDA8591J

Notes

1. With open MUTE/ON pin, the TDA8591J will switch to operating mode (see Section 7.3)

2. V

OO(det)

is the offset voltage across the load. Pin OFFCAP should never be left open-circuit. If pin OFFCAP is

connected to one of the PGND pins, the offset detection is switched off (see Section 14.4).

Table 2

Mode selection

STBY and MUTE/ON inputs (see Table 2)

STBY

control voltage on pin STBY standby mode

0.8

STBY(hys)

voltage hysteresis on
pin STBY

0.2

MUTE/ON

voltage on pin MUTE/ON

mute mode; V

STBY

> 2.5 V

0.8

operating mode; V

STBY

> 2.5 V;

note 1

5.5

STBY

STBY pin current

STBY

= 5 V

MUTE/ON

MUTE/ON pin current

MUTE/ON

= 5.5 V

DIAG output (see Figs 3 to 6)

DIAG

diagnostic output voltage

DIAG(sink)

= 250

DDD, protection circuits and
temperature pre-warning
active

0.3

0.8

offset diagnostic active

2.0

2.8

3.2

leakage current

DIAG

= 14.4 V

THD

total harmonic distortion at
clip detection

DIAG

< 0.8 V

1.5

OO(det)

output offset voltage
detection; note 2

2.0 < V

DIAG

< 3.2 V

2.5

4.5

6.5

virtual junction temperature

temperature pre-warning;
V

DIAG

< 0.8 V

135

145

soft thermal clipping;
G

3 to

23 dB

155

temperature shut-down

170

STBY

MUTE/ON

AMPLIFIER MODE

don't care

standby (off)

mute (DC settled)

operating

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

2002 Jan 14

Philips Semiconductors

Preliminary specification

44 W into 4

or 4

75 W into 2

quad BTL car radio power amplifier

TDA8591J

12 AC CHARACTERISTICS

= V

= 14.4 V; R

= 4

; f = 1 kHz; T

amb

= 25

C; measured in the circuit of Fig.29; unless otherwise

specified.

Notes

1. The noise output voltage is measured in a bandwidth of 20 Hz to 20 kHz.

2. The frequency response is fixed with external components.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

output power

THD + N = 0.5 %

= 4

= 2

THD + N = 1 %; R

= 2

THD + N = 10 %

= 4

= 2

EIAJ values

= 4

41.5

= 2

voltage gain

= 40 mV (RMS)

THD + N

total harmonic distortion plus
noise

= 1 W; f = 1 kHz

0.03

0.1

= 10 W; f = 10 kHz

0.2

channel separation

= 40 mV (RMS); R

= 0

channel unbalance

n(o)

noise output voltage

= 0

; note 1

operating mode

110

mute mode

o(mute)

output voltage in mute mode

mute mode; V

= 1 V (RMS)

SVRR

supply voltage ripple rejection

ripple

= 2 V (p-p); mute or

operating mode; R

= 0

input impedance

3 V (RMS)

CMRR

common mode rejection ratio

= 0

;

= 0.35 V (RMS)

power bandwidth

THD + N = 0.5%; P

1 dB

with respect to 17 W

20 to
20000

ro(l)

low frequency roll-off

1 dB; note 2

ro(h)

high frequency roll-off

1 dB

150

300

kHz

2002 Jan 14

Philips Semiconductors

Preliminary specification

44 W into 4

or 4

75 W into 2

quad BTL car radio power amplifier

TDA8591J

12.1

Performance curves

Conditions for Figs 12 to 28 unless otherwise specified are: V

= 14.4 V; R

= 4

: f = 1 kHz; 80 kHz filter.

handbook, halfpage

300

200

100

MGW457

VP (V)

(mA)

Fig.12 Supply current as a function of supply

voltage.

handbook, halfpage

MGW458

f (Hz)

(dB)

Fig.13 Voltage gain as a function of frequency.

= 10 mV.

handbook, halfpage

MGW459

VP (V)

(W)

(1)

(2)

(3)

Fig.14 Output power as a function of supply

voltage; R

= 4

One channel driven.

(1) EIAJ values.

(2) THD + N = 10%.

(3) THD + N = 1%.

handbook, halfpage

120

100

MGW460

VP (V)

(W)

(1)

(2)

(3)

Fig.15 Output power as a function of supply

voltage; R

= 2

One channel driven.

(1) EIAJ values.

(2) THD + N = 10%.

(3) THD + N = 1%.

2002 Jan 14

Philips Semiconductors

Preliminary specification

44 W into 4

or 4

75 W into 2

quad BTL car radio power amplifier

TDA8591J

handbook, halfpage

100

MGW461

f (Hz)

(dB)

(1)

(2)

(3)

Fig.16 Channel separation as a function of

frequency; channel 1 driven.

= 1 W.

(1) Separation between channels 1 and 3.

(2) Separation between channels 1 and 4.

(3) Separation between channels 1 and 2.

handbook, halfpage

100

MGW462

f (Hz)

(dB)

(1)

(2)

(3)

Fig.17 Channel separation as a function of

frequency; channel 2 driven.

= 1 W.

(1) Separation between channels 2 and 1.

(2) Separation between channels 2 and 3.

(3) Separation between channels 2 and 4.

handbook, halfpage

100

MGW463

f (Hz)

(dB)

(1) (2)

(3)

Fig.18 Channel separation as a function of

frequency; channel 3 driven.

= 1 W.

(1) Separation between channels 3 and 1.

(2) Separation between channels 3 and 2.

(3) Separation between channels 3 and 4.

handbook, halfpage

100

MGW464

f (Hz)

(dB)

(1)
(2)
(3)

Fig.19 Channel separation as a function of

frequency; channel 4 driven.

= 1 W.

(1) Separation between channels 4 and 1.

(2) Separation between channels 4 and 2.

(3) Separation between channels 4 and 3.

2002 Jan 14

Philips Semiconductors

Preliminary specification

44 W into 4

or 4

75 W into 2

quad BTL car radio power amplifier

TDA8591J

handbook, halfpage

THD

(%)

MGW465

Po (W)

(1)

(2)

(3)

Fig.20 Total harmonic distortion plus noise as a

function of output power; R

= 4

(1) f = 10 kHz.

(2) f = 1 kHz.

(3) f = 100 Hz.

handbook, halfpage

THD

(%)

MGW467

Po (W)

(1)

(2)

(3)

Fig.21 Total harmonic distortion plus noise as a

function of output power; R

= 2

(1) f = 10 kHz.

(2) f = 1 kHz.

(3) f = 100 Hz.

handbook, halfpage

THD

(%)

MGW466

f (Hz)

(1)

(2)

Fig.22 Total harmonic distortion plus noise as a

function of frequency; R

= 4

(1) P

= 1 W.

(2) P

= 10 W.

handbook, halfpage

THD

(%)

MGW468

f (Hz)

(1)

(2)

Fig.23 Total harmonic distortion plus noise as a

function of frequency; R

= 2

(1) P

= 1 W.

(2) P

= 10 W.

2002 Jan 14

Philips Semiconductors

Preliminary specification

44 W into 4

or 4

75 W into 2

quad BTL car radio power amplifier

TDA8591J

handbook, halfpage

MGW469

(W)

Po (W)

Fig.24 Power dissipation as a function of output

power; R

= 4

Sine wave input; one channel driven.

handbook, halfpage

MGW470

(W)

Po (W)

Fig.25 Power dissipation as a function of output

power; R

= 2

Sine wave input; one channel driven.

handbook, halfpage

MGW471

(W)

Po (W)

Fig.26 Power dissipation as a function of output

power; R

= 4

IEC60268 filtered noise; one channel driven.

handbook, halfpage

MGW472

(W)

Po (W)

Fig.27 Power dissipation as a function of output

power; R

= 2

IEC60268 filtered noise; one channel driven.

2002 Jan 14

Philips Semiconductors

Preliminary specification

44 W into 4

or 4

75 W into 2

quad BTL car radio power amplifier

TDA8591J

13 TEST INFORMATION

handbook, full pagewidth

MGW451

26 dB

PGND1

26 dB

INTERFACE

OFFSET

DETECTION

PGND2

PGND3

PGND4

GNDHS

DIAGNOSTIC

CHARGE

PUMP

TDA8591J

VP1

VP2

VP3

22 nF

OUT1

22 nF

220 nF

22 nF

OUT2

14 CP

DIAG

26 OFFCAP

22 nF

OUT3

10 k

22 nF

OUT4

5 V

Vin4

IN4

220 nF

Vin3

IN3

SGND

CIN

220 nF

Vin2

IN2

220 nF

Vin1

IN1

220 nF

100

(6.3 V)

2200

(16 V)

100

Vcm

STBY

MUTE/ON

Fig.29 Test circuit.

2002 Jan 14

Philips Semiconductors

Preliminary specification

44 W into 4

or 4

75 W into 2

quad BTL car radio power amplifier

TDA8591J

13.1

Protection circuit testing

handbook, full pagewidth

MGW453

4700

100

TDA8591J

(1)

battery

14.4 V

OUT

STBY

GND

Fig.30 Open ground pin test set-up.

One channel output shown.

At the start of the test, the 4700

F capacitor should be discharged.

The amplifier is in standby during test.

(1) Cable length is 1 metre, cable diameter is 1.5 mm.

handbook, full pagewidth

MGW454

4700

100

TDA8591J

(1)

battery

14.4 V

OUT

STBY

GND

One channel output shown.

At the start of the test, the 4700

F capacitor should be discharged.

The amplifier is in standby during test.

(1) Cable length is 1 metre, cable diameter is 1.5 mm.

Fig.31 Open power supply (pin V

) test set-up.

2002 Jan 14

Philips Semiconductors

Preliminary specification

44 W into 4

or 4

75 W into 2

quad BTL car radio power amplifier

TDA8591J

14 APPLICATION INFORMATION

handbook, full pagewidth

MGW452

26 dB

PGND1

26 dB

INTERFACE

OFFSET

DETECTION

PGND2

PGND3

PGND4

GNDHS

DIAGNOSTIC

CHARGE

PUMP

TDA8591J

VP1

VP2

VP3

22 nF

OUT1

22 nF

220 nF

22 nF

OUT2

14 CP

DIAG

26 OFFCAP

22 nF

OUT3

2 or 4

22 nF

to microcontroller

22 nF

OUT4

Vin4

IN4

220 nF

Vin3

IN3

SGND

CIN

220 nF

Vin2

IN2

220 nF

Vin1

IN1

220 nF

100

(6.3 V)

2200

(16 V)

100 nF

2 or 4

STBY

MUTE/ON

from

microcontroller

(1)

2.2

(10 V)

mute

standby

fast mute

Fig.33 Quad BTL application without offset detection circuit.

(1) Not needed with single-pin mute control.

2002 Jan 14

Philips Semiconductors

Preliminary specification

44 W into 4

or 4

75 W into 2

quad BTL car radio power amplifier

TDA8591J

handbook, full pagewidth

MGW476

26 dB

PGND1

26 dB

INTERFACE

OFFSET

DETECTION

PGND2

PGND3

PGND4

GNDHS

DIAGNOSTIC

CHARGE

PUMP

TDA8591J

VP1

VP2

VP3

22 nF

OUT1

22 nF

220 nF

22 nF

OUT2

14 CP

DIAG

26 OFFCAP

22 nF

OUT3

2 or 4

2 k

22 nF

to microcontroller

22 nF

OUT4

Vin4

IN4

220 nF

Vin3

IN3

SGND

CIN

220 nF

Vin2

IN2

220 nF

Vin1

IN1

220 nF

100

(6.3 V)

2200

(16 V)

100 nF

2 or 4

220 k

STBY

MUTE/ON

from

microcontroller

(1)

2.2

(10 V)

mute

standby

fast mute

Fig.34 Quad BTL application with offset detection circuit.

(1) Not needed with single-pin mute control.

2002 Jan 14

Philips Semiconductors

Preliminary specification

44 W into 4

or 4

75 W into 2

quad BTL car radio power amplifier

TDA8591J

14.1

Special attention for SMD input capacitors

When SMD capacitors are used as input capacitors, low
frequency noise can occur due to stress on the PCB. The
SMD capacitors can operate like small microphones with
sensitivity of

. Special attention should be paid to this

issue when selecting SMD capacitors at the four inputs
(MKT capacitors are recommended).

14.2

Capacitors on outputs

The TDA8591J is optimized for a capacitor of 22 nF from
each output to ground for RF immunity and ESD. These
capacitors can be replaced by the capacitors on the
connector block.

14.3

EMC precautions

The TDA8591J has an all N-type DMOS output stage. The
main advantage of having the same type of power
transistors in the output stage is symmetrical behaviour for
positive and negative signals (sound quality).

A charge pump (DC to DC converter with capacitors only)
is used to generate a voltage above the battery voltage to
drive the high-side power. The clock frequency of the
charge pump (2.9 MHz) is chosen above the AM
frequency band. To prevent possible crosstalk in the FM
frequency band, a SIL pad can be used between the rear
of the TDA8591J and the heatsink. This SIL pad is an
electrical isolator and thermal conductor. It is advisable to
connect the power supply lines of the TDA8591J directly to
the power supply on the printed circuit board of the radio,
so that a one-point earth bonding with the tuner supply is
achieved.

The external capacitor of the charge pump (connected to
pin CP) filters and buffers the voltage generated internally.

The loop area of the capacitor connected to pins CP and
PGND2 should be kept as small as possible. For optimum
performance the capacitor used should have a good
frequency performance, for example an SMD ceramic
capacitor. See Figs 35 and 36 for a good PCB layout.

14.4

Offset detection

As shown in Fig.34, to obtain the DC offset information, an
output from each bridge is summed and filtered through
external 220 k

resistors and a 1

F capacitor at

pin OFFCAP. The low frequency roll-off can be chosen
with the resistor/capacitor combination. Because of the
random phase of the DC offset voltage, the capacitor on
pin OFFCAP should not be a conventional electrolytic
capacitor as leakage current in this capacitor would cause
a shift in low frequency roll-off because of no pre-biasing.

If the offset detection is not used, pin OFFCAP can be
connected to ground, the external components (resistors
of 220 k

and 2 k

and the capacitor of 1

F) are not

needed and the circuit is as shown in Fig.33.

14.5

Channel selection

The following recommendation for a four channel
application is given on the basis of the results of the
channel separation measurements and the dissipation
spread within the package:

Front-left = OUT1

Rear-left = OUT2

Rear-right = OUT3

Front-right = OUT4.

14.6

Detection of short-circuits

Table 3

Detection of short-circuits in standby, mute and operating modes.

AMPLIFIER MODE

SHORT-CIRCUIT ACROSS LOAD

SHORT-CIRCUIT TO SUPPLY

OR GROUND

Standby

no diagnosis

Mute (no output signal)

the value of short-circuit that activates
diagnosis and protection depends on
the output offset voltage

no diagnosis and no active protection if
short-circuit >100

Operating (output signal present)

diagnosis and active protection if
short-circuit <0.4

no diagnosis and no active protection if
short-circuit >100

2002 Jan 14

Philips Semiconductors

Preliminary specification

44 W into 4

or 4

75 W into 2

quad BTL car radio power amplifier

TDA8591J

14.8

PCB design advice

handbook, full pagewidth

MGW456

IN1

PCB SGND

DIAG

(3)

(8)

(4)

(5)

3.3

220 nF

(2)

220 nF

(1)

TDA8591J

(7)

(6)

220 nF

22 nF

IN2

220 nF

IN3

220 nF

IN4

220 nF

2200

(16 V)

13 15

21 24 27

OUT1

22 nF

OUT1

22 nF

OUT2

22 nF

OUT2

22 nF

OUT3

22 nF

OUT3

22 nF

OUT4

22 nF

0.22

(9)

OUT4

GND

8 to 18 V

2.2

(6.3 V)

100

(6.3 V)

C =

Fig.37 PCB design advice.

(1) Power supply high frequency capacitor to be mounted close to the IC. An SMD component is recommended.

(2) Charge pump capacitor to be mounted close to the IC between pins 14 and 7.

(3) Switch closed is the mute mode.

(4) Switch open is the standby mode.

(5) A 3.3 nF capacitor has been added to provide a smooth offset detection diagnostic.

(6) Diagnostic output is less than 0.8 V when DDD or temperature pre-warning or protection circuits are activated.

(7) Signal ground switch is closed if the source is floating. Avoid ground loops in the input signal path. Keep inputs and signal ground close together.

(8) The 22 nF capacitors on the outputs can be replaced by the capacitor on the connector block to ground, where it is often used for RF immunity and

ESD suppression.

(9) Offset detection: if R = 100 k

then C = 2.2 nF; if R = 220 k

then C = 1

F. An electrolytic capacitor is not allowed because of the random phase

of the DC offset.

2002 Jan 14

Philips Semiconductors

Preliminary specification

44 W into 4

or 4

75 W into 2

quad BTL car radio power amplifier

TDA8591J

15 PACKAGE OUTLINE

UNIT

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

IEC

JEDEC

EIAJ

17.0
15.5

4.6
4.3

1.15
0.85

1.65
1.35

DIMENSIONS (mm are the original dimensions)

Note

1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.

SOT521-1

10 mm

scale

DBS27P: plastic DIL-bent-SIL power package; 27 leads (lead length 7.7 mm)

SOT521-1

non-concave

view B: mounting base side

(1)

0.60
0.45

0.5
0.3

30.4
29.9

28.0
27.5

2.0

12.2
11.8

10.15

9.85

1.0

4.0

2.4
1.6

2.4
1.8

2.1
1.8

1.85
1.65

4.3

8.4
7.0

0.25

0.6

0.03

99-01-05

2002 Jan 14

Philips Semiconductors

Preliminary specification

44 W into 4

or 4

75 W into 2

quad BTL car radio power amplifier

TDA8591J

16 SOLDERING

16.1

Introduction to soldering through-hole mount
packages

This text gives a brief insight to wave, dip and manual
soldering. A more in-depth account of soldering ICs can be
found in our

"Data Handbook IC26; Integrated Circuit

Packages" (document order number 9398 652 90011).

Wave soldering is the preferred method for mounting of
through-hole mount IC packages on a printed-circuit
board.

16.2

Soldering by dipping or by solder wave

The maximum permissible temperature of the solder is
260

C; solder at this temperature must not be in contact

with the joints for more than 5 seconds.

The total contact time of successive solder waves must not
exceed 5 seconds.

The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (T

stg(max)

). If the

printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.

16.3

Manual soldering

Apply the soldering iron (24 V or less) to the lead(s) of the
package, either below the seating plane or not more than
2 mm above it. If the temperature of the soldering iron bit
is less than 300

C it may remain in contact for up to

10 seconds. If the bit temperature is between
300 and 400

C, contact may be up to 5 seconds.

16.4

Suitability of through-hole mount IC packages for dipping and wave soldering methods

Note

1. For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.

PACKAGE

SOLDERING METHOD

DIPPING

WAVE

DBS, DIP, HDIP, SDIP, SIL

suitable

(1)

2002 Jan 14

Philips Semiconductors

Preliminary specification

44 W into 4

or 4

75 W into 2

quad BTL car radio power amplifier

TDA8591J

17 DATA SHEET STATUS

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

DATA SHEET STATUS

(1)

PRODUCT

STATUS

(2)

DEFINITIONS

Objective data

Development

This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

Preliminary data

Qualification

This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.

Product data

Production

This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.

18 DEFINITIONS

Short-form specification

The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition

Limiting values given are in

accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information

Applications that are

described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.

19 DISCLAIMERS

Life support applications

These products are not

designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes

Philips Semiconductors

reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.

SCA74

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Philips Semiconductors a worldwide company

Contact information

For additional information please visit http://www.semiconductors.philips.com.

Fax: +31 40 27 24825

For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.

Printed in The Netherlands

753503/01/pp

Date of release:

2002 Jan 14

Document order number:

9397 750 08682

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Document Outline

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Document Outline

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