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Электронный компонент: TDA8922BTH

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1.
General description
The TDA8922B is a high efficiency class-D audio power amplifier with very low
dissipation. The typical output power is 2
50 W.
The device is available in the HSOP24 power package and in the DBS23P through-hole
power package. The amplifier operates over a wide supply voltage range from
12.5 V
to
30 V and consumes a very low quiescent current.
2.
Features
s
Zero dead time switching
s
Advanced current protection: output current limiting
s
Smooth start-up: no pop-noise due to DC offset
s
High efficiency
s
Operating supply voltage from
12.5 V to
30 V
s
Low quiescent current
s
Usable as a stereo Single-Ended (SE) amplifier or as a mono amplifier in Bridge-Tied
Load (BTL)
s
Fixed gain of 30 dB in Single-Ended (SE) and 36 dB in Bridge-Tied Load (BTL)
s
High supply voltage ripple rejection
s
Internal switching frequency can be overruled by an external clock
s
Full short-circuit proof across load and to supply lines
s
Thermally protected.
3.
Applications
s
Television sets
s
Home-sound sets
s
Multimedia systems
s
All mains fed audio systems
s
Car audio (boosters).
TDA8922B
2
50 W class-D power amplifier
Rev. 01 -- 1 October 2004
Preliminary data sheet
9397 750 13357
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Preliminary data sheet
Rev. 01 -- 1 October 2004
2 of 32
Philips Semiconductors
TDA8922B
2
50 W class-D power amplifier
4.
Quick reference data
5.
Ordering information
Table 1:
Quick reference data
Symbol Parameter
Conditions
Min
Typ
Max
Unit
General; V
P
=
26 V
V
P
supply voltage
12.5
26
30
V
I
q(tot)
total quiescent
supply current
no load; no filter; no
RC-snubber network
connected
-
50
65
mA
Stereo single-ended configuration
P
o
output power
R
L
= 6
; THD = 10 %;
V
P
=
26 V
-
50
-
W
R
L
= 8
; THD = 10 %;
V
P
=
21 V
-
25
-
W
Mono bridge-tied load configuration
P
o
output power
R
L
= 8
; THD = 10 %;
V
P
=
21 V
-
88
-
W
Table 2:
Ordering information
Type number
Package
Name
Description
Version
TDA8922BTH
HSOP24
plastic; heatsink small outline package; 24 leads; low
stand-off height
SOT566-3
TDA8922BJ
DBS23P
plastic DIL-bent-SIL power package; 23 leads
(straight lead length 3.2 mm)
SOT411-1
9397 750 13357
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Preliminary data sheet
Rev. 01 -- 1 October 2004
3 of 32
Philips Semiconductors
TDA8922B
2
50 W class-D power amplifier
6.
Block diagram
(1) Pin numbers in parenthesis refer to the TDA8922BJ.
Fig 1.
Block diagram.
coa022
OUT1
V
SSP1
V
DDP2
DRIVER
HIGH
OUT2
BOOT2
TDA8922BTH
(TDA8922BJ)
BOOT1
DRIVER
LOW
RELEASE1
SWITCH1
ENABLE1
CONTROL
AND
HANDSHAKE
PWM
MODULATOR
MANAGER
OSCILLATOR
TEMPERATURE SENSOR
CURRENT PROTECTION
VOLTAGE PROTECTION
STABI
MODE
INPUT
STAGE
mute
9 (3)
8 (2)
IN1M
IN1P
22 (15)
21 (14)
20 (13)
17 (11)
16 (10)
15 (9)
V
SSP2
V
SSP1
DRIVER
HIGH
DRIVER
LOW
RELEASE2
SWITCH2
ENABLE2
CONTROL
AND
HANDSHAKE
PWM
MODULATOR
11 (5)
SGND1
7 (1)
OSC
2 (19)
SGND2
6 (23)
MODE
INPUT
STAGE
mute
5 (22)
4 (21)
IN2M
IN2P
19 (-)
24 (17)
V
SSD
n.c.
1 (18)
V
SSA2
12 (6)
V
SSA1
3 (20)
V
DDA2
10 (4)
V
DDA1
23 (16)
13 (7)
18 (12)
14 (8)
V
DDP2
PROT
STABI
V
DDP1
9397 750 13357
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Preliminary data sheet
Rev. 01 -- 1 October 2004
4 of 32
Philips Semiconductors
TDA8922B
2
50 W class-D power amplifier
7.
Pinning information
7.1 Pinning
7.2 Pin description
Fig 2.
Pin configuration TDA8922BTH.
Fig 3.
Pin configuration TDA8922BJ.
TDA8922BTH
V
SSD
V
SSA2
V
DDP2
SGND2
BOOT2
V
DDA2
OUT2
IN2M
V
SSP2
IN2P
n.c.
MODE
STABI
OSC
V
SSP1
IN1P
OUT1
IN1M
BOOT1
V
DDA1
V
DDP1
SGND1
PROT
V
SSA1
001aab170
24
23
22
21
20
19
18
17
16
15
14
13
11
12
9
10
7
8
5
6
3
4
1
2
TDA8922BJ
OSC
IN1P
IN1M
V
DDA1
SGND1
V
SSA1
PROT
V
DDP1
BOOT1
OUT1
V
SSP1
STABI
V
SSP2
OUT2
BOOT2
V
DDP2
V
SSD
V
SSA2
SGND2
V
DDA2
IN2M
IN2P
MODE
001aab171
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
Table 3:
Pin description
Symbol
Pin
Description
TDA8922BTH
TDA8922BJ
V
SSA2
1
18
negative analog supply voltage for channel 2
SGND2
2
19
signal ground for channel 2
V
DDA2
3
20
positive analog supply voltage for channel 2
IN2M
4
21
negative audio input for channel 2
IN2P
5
22
positive audio input for channel 2
MODE
6
23
mode selection input: Standby; Mute or
Operating mode
OSC
7
1
oscillator frequency adjustment or tracking input
IN1P
8
2
positive audio input for channel 1
IN1M
9
3
negative audio input for channel 1
V
DDA1
10
4
positive analog supply voltage for channel 1
9397 750 13357
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Preliminary data sheet
Rev. 01 -- 1 October 2004
5 of 32
Philips Semiconductors
TDA8922B
2
50 W class-D power amplifier
8.
Functional description
8.1 General
The TDA8922B is a two channel audio power amplifier using class-D technology.
The audio input signal is converted into a digital Pulse Width Modulated (PWM) signal via
an analog input stage and PWM modulator. To enable the output power transistors to be
driven, this digital PWM signal is applied to a control and handshake block and driver
circuits for both the high side and low side. In this way a level shift is performed from the
low power digital PWM signal (at logic levels) to a high power PWM signal which switches
between the main supply lines.
A 2nd-order low-pass filter converts the PWM signal to an analog audio signal across the
loudspeakers.
The TDA8922B one-chip class-D amplifier contains high power D-MOS switches, drivers,
timing and handshaking between the power switches and some control logic. For
protection a temperature sensor and a maximum current detector are built-in.
The two audio channels of the TDA8922B contain two PWMs, two analog feedback loops
and two differential input stages. It also contains circuits common to both channels such
as the oscillator, all reference sources, the mode functionality and a digital timing
manager.
The TDA8922B contains two independent amplifier channels with high output power, high
efficiency, low distortion and a low quiescent current. The amplifier channels can be
connected in the following configurations:
Mono Bridge-Tied Load (BTL) amplifier
Stereo Single-Ended (SE) amplifiers.
SGND1
11
5
signal ground for channel 1
V
SSA1
12
6
negative analog supply voltage for channel 1
PROT
13
7
decoupling capacitor for protection (OCP)
V
DDP1
14
8
positive power supply voltage for channel 1
BOOT1
15
9
bootstrap capacitor for channel 1
OUT1
16
10
PWM output from channel 1
V
SSP1
17
11
negative power supply voltage for channel 1
STABI
18
12
decoupling of internal stabilizer for logic supply
n.c.
19
-
not connected
V
SSP2
20
13
negative power supply voltage for channel 2
OUT2
21
14
PWM output from channel 2
BOOT2
22
15
bootstrap capacitor for channel 2
V
DDP2
23
16
positive power supply voltage for channel 2
V
SSD
24
17
negative digital supply voltage
Table 3:
Pin description
...continued
Symbol
Pin
Description
TDA8922BTH
TDA8922BJ
9397 750 13357
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Preliminary data sheet
Rev. 01 -- 1 October 2004
6 of 32
Philips Semiconductors
TDA8922B
2
50 W class-D power amplifier
The amplifier system can be switched in three operating modes with pin MODE:
Standby mode; with a very low supply current
Mute mode; the amplifiers are operational; but the audio signal at the output is
suppressed by disabling the VI-converter input stages
Operating mode; the amplifiers fully are operational with output signal.
To ensure pop-noise free start-up the DC output offset voltage is applied gradually to the
output between Mute mode and Operating mode. The bias current setting of the VI
converters is related to the voltage on the MODE pin; in Mute mode the bias current
setting of the VI converters is zero (VI converters disabled) and in Operating mode the
bias current is at maximum. The time constant required to apply the DC output offset
voltage gradually between mute and operating can be generated via an RC-network on
the MODE pin. An example of a switching circuit for driving pin MODE is illustrated in
Figure 4
. If the capacitor C is left out of the application the voltage on the MODE pin will
be applied with a much smaller time-constant, which might result in audible pop-noises
during start-up (depending on DC output offset voltage and used loudspeaker).
In order to fully charge the coupling capacitors at the inputs, the amplifier will remain
automatically in the Mute mode before switching to the Operating mode. A complete
overview of the start-up timing is given in
Figure 5
.
Fig 4.
Example of mode selection circuit.
001aab172
SGND
MODE pin
mute/on
R
C
R
+
5 V
standby/
mute
9397 750 13357
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Preliminary data sheet
Rev. 01 -- 1 October 2004
7 of 32
Philips Semiconductors
TDA8922B
2
50 W class-D power amplifier
When switching from standby to mute, there is a delay of 100 ms before the output starts
switching. The audio signal is available after V
mode
has been set to operating, but not earlier
than 150 ms after switching to mute. For pop-noise free start-up it is recommended that the
time constant applied to the MODE pin is at least 350 ms for the transition between mute and
operating.
When switching directly from standby to operating, there is a first delay of 100 ms before the
outputs starts switching. The audio signal is available after a second delay of 50 ms. For
pop-noise free start-up it is recommended that the time constant applied to the MODE pin is at
least 350 ms for the transition between standby and operating
Fig 5.
Timing on mode selection input.
2.2 V
<
V
mode
<
3 V
audio output
operating
standby
mute
50 %
duty cycle
>
4.2 V
0 V (SGND)
time
coa024
V
mode
100 ms
50 ms
modulated PWM
>
350 ms
2.2 V
<
V
mode
<
3 V
audio output
operating
standby
mute
50 %
duty cycle
>
4.2 V
0 V (SGND)
time
V
mode
100 ms
50 ms
modulated PWM
>
350 ms
9397 750 13357
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Preliminary data sheet
Rev. 01 -- 1 October 2004
8 of 32
Philips Semiconductors
TDA8922B
2
50 W class-D power amplifier
8.2 Pulse width modulation frequency
The output signal of the amplifier is a PWM signal with a carrier frequency of
approximately 317 kHz. Using a 2nd-order LC demodulation filter in the application results
in an analog audio signal across the loudspeaker. This switching frequency is fixed by an
external resistor R
OSC
connected between pin OSC and V
SSA
. An optimal setting for the
carrier frequency is between 300 kHz and 350 kHz.
Using an external resistor of 30 k
on the OSC pin, the carrier frequency is set to
317 kHz.
If two or more class-D amplifiers are used in the same audio application, it is advisable to
have all devices operating at the same switching frequency by using an external clock
circuit.
8.3 Protections
The following protections are included in TDA8922B:
OverTemperature Protection (OTP)
OverCurrent Protection (OCP)
Window Protection (WP)
Supply voltage protections:
UnderVoltage Protection (UVP)
OverVoltage Protection (OVP)
UnBalance Protection (UBP).
The reaction of the device on the different fault conditions differs per protection:
8.3.1 OverTemperature Protection (OTP)
If the junction temperature T
j
> 150
C, then the power stage will shut-down immediately.
The power stage will start switching again if the temperature drops to approximately
130
C, thus there is a hysteresis of approximately 20
C.
8.3.2 OverCurrent Protection (OCP)
When the loudspeaker terminals are short-circuited or if one of the demodulated outputs
of the amplifier is short-circuited to one of the supply lines, this will be detected by the
OverCurrent Protection (OCP). If the output current exceeds the maximum output current
of 5 A, this current will be limited by the amplifier to 5 A while the amplifier outputs remain
switching (the amplifier is NOT shut-down completely).
The amplifier can distinguish between an impedance drop of the loudspeaker and
low-ohmic short across the load. In the TDA8922B this impedance threshold (Z
th
)
depends on the supply voltage used.
When a short is made across the load causing the impedance to drop below the threshold
level (< Z
th
) then the amplifier is switched off completely and after a time of 100 ms it will
try to restart again. If the short circuit condition is still present after this time this cycle will
be repeated. The average dissipation will be low because of this low duty cycle.
9397 750 13357
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Preliminary data sheet
Rev. 01 -- 1 October 2004
9 of 32
Philips Semiconductors
TDA8922B
2
50 W class-D power amplifier
In case of an impedance drop (e.g. due to dynamic behavior of the loudspeaker) the same
protection will be activated; the maximum output current is again limited to 5 A, but the
amplifier will NOT switch-off completely (thus preventing audio holes from occurring).
Result will be a clipping output signal without any artefacts.
See also
Section 13.6
for more information on this maximum output current limiting
feature.
8.3.3 Window Protection (WP)
During the start-up sequence, when pin MODE is switched from standby to mute, the
conditions at the output terminals of the power stage are checked. In the event of a
short-circuit at one of the output terminals to V
DD
or V
SS
the start-up procedure is
interrupted and the system waits for open-circuit outputs. Because the test is done before
enabling the power stages, no large currents will flow in the event of a short-circuit. This
system is called Window Protection (WP) and protects for short-circuits at both sides of
the output filter to both supply lines. When there is a short-circuit from the power PWM
output of the power stage to one of the supply lines (before the demodulation filter) it will
also be detected by the start-up safety test. Practical use of this test feature can be found
in detection of short-circuits on the printed-circuit board.
Remark: This test is operational during (every) start-up sequence at a transition between
Standby and Mute mode. However when the amplifier is completely shut-down due to
activation of the OverCurrent Protection (OCP) because a short to one of the supply lines
is made, then during restart (after 100 ms) the window protection will be activated. As a
result the amplifier will not start-up until the short to the supply lines is removed.
8.3.4 Supply voltage protections
If the supply voltage drops below
12.5 V, the UnderVoltage Protection (UVP) circuit is
activated and the system will shut-down correctly. If the internal clock is used, this
switch-off will be silent and without pop noise. When the supply voltage rises above the
threshold level, the system is restarted again after 100 ms. If the supply voltage exceeds
33 V the OverVoltage Protection (OVP) circuit is activated and the power stages will
shut-down. It is re-enabled as soon as the supply voltage drops below the threshold level.
So in this case no timer of 100 ms is started.
An additional UnBalance Protection (UBP) circuit compares the positive analog (V
DDA
)
and the negative analog (V
SSA
) supply voltages and is triggered if the voltage difference
between them exceeds a certain level. This level depends on the sum of both supply
voltages. An expression for the unbalanced threshold level is as follows:
V
th(ub)
0.15
(V
DDA
+ V
SSA
).
When the supply voltage difference drops below the threshold level, the system is
restarted again after 100 ms.
Example: With a symmetrical supply of
30 V, the protection circuit will be triggered if the
unbalance exceeds approximately 9 V; see also
Section 13.7
.
In
Table 4
an overview is given of all protections and the effect on the output signal.
9397 750 13357
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Preliminary data sheet
Rev. 01 -- 1 October 2004
10 of 32
Philips Semiconductors
TDA8922B
2
50 W class-D power amplifier
[1]
Hysteresis of 20 degrees will influence restart timing depending on heatsink size.
[2]
Only complete shut-down of amplifier if short-circuit impedance is below threshold of 1
. In all other cases
current limiting: resulting in clipping output signal.
[3]
Fault condition detected during (every) transition between standby-to-mute and during restart after
activation of OCP (short to one of the supply lines).
8.4 Differential audio inputs
For a high common mode rejection ratio and a maximum of flexibility in the application, the
audio inputs are fully differential. By connecting the inputs anti-parallel the phase of one of
the channels can be inverted, so that a load can be connected between the two output
filters. In this case the system operates as a mono BTL amplifier and with the same
loudspeaker impedance an approximately four times higher output power can be
obtained.
The input configuration for a mono BTL application is illustrated in
Figure 6
.
In the stereo single-ended configuration it is also recommended to connect the two
differential inputs in anti-phase. This has advantages for the current handling of the power
supply at low signal frequencies.
Table 4:
Overview protections TDA8922B
Protection name
Complete shut-down
Restart directly
Restart every 100 ms
OTP
Y
Y
[1]
N
[1]
OCP
N
[2]
Y
[2]
N
[2]
WP
Y
[3]
Y
N
UVP
Y
N
Y
OVP
Y
Y
N
UBP
Y
N
Y
Fig 6.
Input configuration for mono BTL application.
V
in
IN1P
OUT1
power stage
mbl466
OUT2
SGND
IN1M
IN2P
IN2M
9397 750 13357
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Preliminary data sheet
Rev. 01 -- 1 October 2004
11 of 32
Philips Semiconductors
TDA8922B
2
50 W class-D power amplifier
9.
Limiting values
[1]
Current limiting concept. See also
Section 13.6
.
10. Thermal characteristics
[1]
See also
Section 13.5
.
11. Static characteristics
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
V
P
supply voltage
-
30
V
I
ORM
repetitive peak current in
output pin
maximum output
current limiting
[1]
5
-
A
T
stg
storage temperature
-
55
+150
C
T
amb
ambient temperature
-
40
+85
C
T
j
junction temperature
-
150
C
Table 6:
Thermal characteristics
Symbol
Parameter
Conditions
Typ
Unit
R
th(j-a)
thermal resistance from junction to ambient
[1]
TDA8922BTH
in free air
35
K/W
TDA8922BJ
in free air
35
K/W
R
th(j-c)
thermal resistance from junction to case
[1]
TDA8922BTH
1.3
K/W
TDA8922BJ
1.3
K/W
Table 7:
Static characteristics
V
P
=
26 V; f
osc
= 317 kHz; T
amb
= 25
C; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max Unit
Supply
V
P
supply voltage
[1]
12.5
26
30
V
I
q(tot)
total quiescent supply
current
no load; no filter; no
snubber network
connected
-
50
65
mA
I
stb
standby supply current
-
150
500
A
Mode select input; pin MODE
V
I
input voltage
[2]
0
-
6
V
I
I
input current
V
I
= 5.5 V
-
100
300
A
V
stb
input voltage for
Standby mode
[2]
[3]
0
-
0.8
V
V
mute
input voltage for Mute
mode
[2]
[3]
2.2
-
3.0
V
V
on
input voltage for
Operating mode
[2]
[3]
4.2
-
6
V
9397 750 13357
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Preliminary data sheet
Rev. 01 -- 1 October 2004
12 of 32
Philips Semiconductors
TDA8922B
2
50 W class-D power amplifier
[1]
The circuit is DC adjusted at V
P
=
12.5 V to
30 V.
[2]
With respect to SGND (0 V).
[3]
The transition between Standby and Mute mode contain hysteresis, while the slope of the transition
between Mute and Operating mode is determined by the time-constant on the MODE pin see
Figure 7
.
[4]
DC output offset voltage is applied to the output during the transition between Mute and Operating mode in
a gradual way.The slope of the dV/dt caused by any DC output offset is determined by the time-constant on
the MODE pin.
Audio inputs; pins IN1M, IN1P, IN2P and IN2M
V
I
DC input voltage
[2]
-
0
-
V
Amplifier outputs; pins OUT1 and OUT2
V
OO(SE)(mute)
mute SE output offset
voltage
-
-
15
mV
V
OO(SE)(on)
operating SE output
offset voltage
[4]
-
-
150
mV
V
OO(BTL)(mute)
mute BTL output offset
voltage
-
-
21
mV
V
OO(BTL)(on)
operating BTL output
offset voltage
[4]
-
-
210
mV
Stabilizer output; pin STABI
V
o(stab)
stabilizer output
voltage
mute and operating;
with respect to V
SSP1
11
12.5 15
V
Temperature protection
T
prot
temperature protection
activation
-
150
-
C
T
hys
hysteresis on
temperature protection
-
20
-
C
Fig 7.
Behavior of mode selection pin MODE.
Table 7:
Static characteristics
...continued
V
P
=
26 V; f
osc
= 317 kHz; T
amb
= 25
C; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max Unit
STBY
MUTE
ON
5.5
coa021
V
MODE
(V)
4.2
3.0
2.2
0.8
0
V
O
(V)
V
oo
(mute)
V
oo
(on)
slope is directly related to
time-constant on the MODE pin
9397 750 13357
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Preliminary data sheet
Rev. 01 -- 1 October 2004
13 of 32
Philips Semiconductors
TDA8922B
2
50 W class-D power amplifier
12. Dynamic characteristics
12.1 Switching characteristics
12.2 Stereo and dual SE application
Table 8:
Switching characteristics
V
DD
=
26 V; T
amb
= 25
C; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Internal oscillator
f
osc
typical internal oscillator
frequency
R
OSC
= 30.0 k
290
317
344
kHz
f
osc(int)
internal oscillator
frequency range
210
-
600
kHz
External oscillator or frequency tracking
V
OSC
high-level voltage on pin
OSC
SGND + 4.5 SGND + 5
SGND + 6
V
V
OSC(trip)
trip level for tracking on
pin OSC
-
SGND + 2.5 -
V
f
track
frequency range for
tracking
210
-
600
kHz
Table 9:
Stereo and dual SE application characteristics
V
P
=
26 V; R
L
= 6
; f
i
= 1 kHz; R
sL
< 0.1
[1]
; T
amb
= 25
C; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
P
o
output power
R
L
= 4
; V
P
=
21 V
[2]
THD = 0.5 %
-
32
-
W
THD = 10 %
-
40
-
W
R
L
= 6
; V
P
=
26 V
[2]
THD = 0.5 %
-
40
-
W
THD = 10 %
-
50
-
W
R
L
= 8
; V
P
=
21 V
[2]
THD = 0.5 %
-
20
-
W
THD = 10 %
-
25
-
W
R
L
= 8
; V
P
=
26 V
[2]
THD = 0.5 %
-
32
-
W
THD = 10 %
-
40
-
W
THD
total harmonic distortion
P
o
= 1 W
[3]
f
i
= 1 kHz
-
0.02
0.05
%
f
i
= 6 kHz
-
0.07
-
%
G
v(cl)
closed loop voltage gain
29
30
31
dB
SVRR
supply voltage ripple
rejection
operating
[4]
f
i
= 100 Hz
-
55
-
dB
f
i
= 1 kHz
40
50
-
dB
mute; f
i
= 100 Hz
[4]
-
55
-
dB
standby; f
i
= 100 Hz
[4]
-
80
-
dB
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Preliminary data sheet
Rev. 01 -- 1 October 2004
14 of 32
Philips Semiconductors
TDA8922B
2
50 W class-D power amplifier
[1]
R
sL
is the series resistance of inductor of low-pass LC filter in the application.
[2]
Output power is measured indirectly; based on R
DSon
measurement. See also
Section 13.3
.
[3]
Total harmonic distortion is measured in a bandwidth of 22 Hz to 20 kHz, using an AES17 20 kHz brickwall filter. Maximum limit is
guaranteed but may not be 100 % tested.
[4]
V
ripple
= V
ripple(max)
= 2 V (p-p); R
s
= 0
.
[5]
B = 22 Hz to 20 kHz, using an AES17 20 kHz brickwall filter.
[6]
B = 22 Hz to 20 kHz, using an AES17 20 kHz brickwall filter; independent of R
s
.
[7]
P
o
= 1 W; R
s
= 0
; f
i
= 1 kHz.
[8]
V
i
= V
i(max)
= 1 V (RMS); f
i
= 1 kHz.
12.3 Mono BTL application
Z
i
input impedance
45
68
-
k
V
n(o)
noise output voltage
operating
R
s
= 0
[5]
-
210
-
V
mute
[6]
-
160
-
V
cs
channel separation
[7]
-
70
-
dB
G
v
channel unbalance
-
-
1
dB
V
o(mute)
output signal in mute
[8]
-
100
-
V
CMRR
common mode rejection
ratio
V
i(CM)
= 1 V (RMS)
-
75
-
dB
Table 9:
Stereo and dual SE application characteristics
...continued
V
P
=
26 V; R
L
= 6
; f
i
= 1 kHz; R
sL
< 0.1
[1]
; T
amb
= 25
C; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Table 10:
Mono BTL application characteristics
V
P
=
26 V; R
L
= 8
; f
i
= 1 kHz; f
osc
= 317 kHz; R
sL
< 0.1
[1]
; T
amb
= 25
C; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
P
o
output power
R
L
= 6
; V
P
=
16 V
[2]
THD = 0.5 %
-
48
-
W
THD = 10 %
-
60
-
W
R
L
= 8
; V
P
=
21 V
[2]
THD = 0.5 %
-
71
-
W
THD = 10 %
-
88
-
W
THD
total harmonic distortion
P
o
= 1 W
[3]
f
i
= 1 kHz
-
0.02
0.05
%
f
i
= 6 kHz
-
0.07
-
%
G
v(cl)
closed loop voltage gain
35
36
37
dB
SVRR
supply voltage ripple
rejection
operating
[4]
f
i
= 100 Hz
-
80
-
dB
f
i
= 1 kHz
70
80
-
dB
mute; f
i
= 100 Hz
[4]
-
80
-
dB
standby; f
i
= 100 Hz
[4]
-
80
-
dB
Z
i
input impedance
22
34
-
k
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Preliminary data sheet
Rev. 01 -- 1 October 2004
15 of 32
Philips Semiconductors
TDA8922B
2
50 W class-D power amplifier
[1]
R
sL
is the series resistance of inductor of low-pass LC filter in the application.
[2]
Output power is measured indirectly; based on R
DSon
measurement. See also
Section 13.3
.
[3]
Total harmonic distortion is measured in a bandwidth of 22 Hz to 20 kHz, using an AES17 20 kHz brickwall filter. Maximum limit is
guaranteed but may not be 100 % tested.
[4]
V
ripple
= V
ripple(max)
= 2 V (p-p); R
s
= 0
.
[5]
B = 22 Hz to 20 kHz, using an AES17 20 kHz brickwall filter.
[6]
B = 22 Hz to 20 kHz, using an AES17 20 kHz brickwall filter; independent of R
s
.
[7]
V
i
= V
i(max)
= 1 V (RMS); f
i
= 1 kHz.
13. Application information
13.1 BTL application
When using the power amplifier in a mono BTL application the inputs of both channels
must be connected in parallel and the phase of one of the inputs must be inverted (see
Figure 6
). In principle the loudspeaker can be connected between the outputs of the two
single-ended demodulation filters.
13.2 MODE pin
For pop-noise free start-up an RC time-constant must be applied on the MODE pin. The
bias-current setting of the VI-converter input is directly related to the voltage on the MODE
pin. In turn the bias-current setting of the VI converters is directly related to the DC output
offset voltage. Thus a slow dV/dt on the MODE pin results in a slow dV/dt for the DC
output offset voltage, resulting in pop-noise free start-up. A time-constant of 500 ms is
sufficient to guarantee pop-noise free start-up (see also
Figure 4
,
5
and
7
).
13.3 Output power estimation
The achievable output powers in several applications (SE and BTL) can be estimated
using the following expressions:
SE:
(1)
V
n(o)
noise output voltage
operating
R
s
= 0
[5]
-
300
-
V
mute
[6]
-
220
-
V
V
o(mute)
output signal in mute
[7]
-
200
-
V
CMRR
common mode rejection
ratio
V
i(CM)
= 1 V (RMS)
-
75
-
dB
Table 10:
Mono BTL application characteristics
...continued
V
P
=
26 V; R
L
= 8
; f
i
= 1 kHz; f
osc
= 317 kHz; R
sL
< 0.1
[1]
; T
amb
= 25
C; unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
P
o 1%
(
)
R
L
R
L
0.6
+
--------------------
V
P
1
t
min
f
osc
(
)
2
2
R
L
-----------------------------------------------------------------------------------------
=
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Preliminary data sheet
Rev. 01 -- 1 October 2004
16 of 32
Philips Semiconductors
TDA8922B
2
50 W class-D power amplifier
Maximum current (internally limited to 5 A):
(2)
BTL:
(3)
Maximum current (internally limited to 5 A):
(4)
Variables:
R
L
= load impedance
f
osc
= oscillator frequency
t
min
= minimum pulse width (typical 150 ns).
V
P
= single-sided supply voltage (so, if supply is
30 V symmetrical, then V
P
= 30 V)
P
o(1%)
= output power just at clipping
P
o(10%)
= output power at THD = 10 %
P
o(10%)
= 1.24
P
o(1%)
.
13.4 External clock
When using an external clock the following accuracy of the duty cycle of the external clock
has to be taken into account: 47.5 % <
< 52.5 %.
If two or more class-D amplifiers are used in the same audio application, it is strongly
recommended that all devices run at the same switching frequency.This can be realized
by connecting all OSC pins together and feed them from an external central oscillator.
Using an external oscillator it is necessary to force pin OSC to a DC-level above SGND for
switching from the internal to an external oscillator. In this case the internal oscillator is
disabled and the PWM will be switched on the external frequency. The frequency range of
the external oscillator must be in the range as specified in the switching characteristics;
see
Section 12.1
.
In an application circuit:
Internal oscillator: R
OSC
connected between pin OSC and V
SSA
External oscillator: connect the oscillator signal between pins OSC and SGND; delete
R
OSC
and C
OSC
.
I
o peak
(
)
V
P
1
t
min
f
osc
(
)
R
L
0.6
+
------------------------------------------------------
=
P
o 1%
(
)
R
L
R
L
1.2
+
--------------------
2V
P
1
t
min
f
osc
(
)
2
2
R
L
---------------------------------------------------------------------------------------------
=
I
o peak
(
)
2V
P
1
t
min
f
osc
(
)
R
L
1.2
+
---------------------------------------------------------
=
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Preliminary data sheet
Rev. 01 -- 1 October 2004
17 of 32
Philips Semiconductors
TDA8922B
2
50 W class-D power amplifier
13.5 Heatsink requirements
In some applications it may be necessary to connect an external heatsink to the
TDA8922B. Limiting factor is the 150
C maximum junction temperature T
j(max)
which
cannot be exceeded. The expression below shows the relationship between the maximum
allowable power dissipation and the total thermal resistance from junction to ambient:
P
diss
is determined by the efficiency (
) of the TDA8922B. The efficiency measured in the
TDA8922B as a function of output power is given in
Figure 19
. The power dissipation can
be derived as function of output power
Figure 18
.
The derating curves (given for several values of the R
th(j-a)
) are illustrated in
Figure 8
. A
maximum junction temperature T
j
= 150
C is taken into account. From
Figure 8
the
maximum allowable power dissipation for a given heatsink size can be derived or the
required heatsink size can be determined at a required dissipation level.
13.6 Output current limiting
To guarantee the robustness of the class-D amplifier the maximum output current which
can be delivered by the output stage is limited. An advanced OverCurrent Protection
(OCP) is included for each output power switch.
When the current flowing through any of the power switches exceeds the defined internal
threshold of 5 A (e.g. in case of a short-circuit to the supply lines or a short-circuit across
the load) the maximum output current of the amplifier will be regulated to 5 A.
(1) R
th(j-a)
= 5 K/W.
(2) R
th(j-a)
= 10 K/W.
(3) R
th(j-a)
= 15 K/W.
(4) R
th(j-a)
= 20 K/W.
(5) R
th(j-a)
= 35 K/W.
Fig 8.
Derating curves for power dissipation as a function of maximum ambient
temperature.
R
th j
a
(
)
T
j max
(
)
T
amb
P
diss
--------------------------------------
=
P
diss
(W)
30
20
10
0
T
amb
(
C)
(1)
(2)
(3)
(4)
(5)
0
20
100
40
60
80
mbl469
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Preliminary data sheet
Rev. 01 -- 1 October 2004
18 of 32
Philips Semiconductors
TDA8922B
2
50 W class-D power amplifier
The TDA8922B amplifier can distinguish between a low-ohmic short circuit condition and
other overcurrent conditions like dynamic impedance drops of the used loudspeakers. The
impedance threshold (Z
th
) depends on the supply voltage used.
Depending on the impedance of the short circuit the amplifier will react as follows:
1. Short-circuit impedance > Z
th
:
The maximum output current of the amplifier is regulated to 5 A, but the amplifier will
not shut-down its PWM outputs. Effectively this results in a clipping output signal
across the load (behavior is very similar to voltage clipping).
2. Short-circuit impedance < Z
th
:
The amplifier will limit the maximum output current to 5 A and at the same time the
capacitor on the PROT pin is discharged. When the voltage across this capacitor
drops below an internal threshold voltage the amplifier will shut-down completely and
an internal timer will be started.
A typical value for the capacitor on the PROT pin is 220 pF. After a fixed time of
100 ms the amplifier is switched on again. If the requested output current is still too
high the amplifier will switch-off again. Thus the amplifier will try to switch to the
Operating mode every 100 ms. The average dissipation will be low in this situation
because of this low duty cycle. If the overcurrent condition is removed the amplifier will
remain in Operating mode once restarted.
In this way the TDA8922B amplifier is fully robust against short circuit conditions while at
the same time so-called audio holes as a result of loudspeaker impedance drops are
eliminated.
13.7 Pumping effects
In a typical stereo half-bridge (Single-Ended (SE)) application the TDA8922B class-D
amplifier is supplied by a symmetrical voltage (e.g V
DD
= +26 V and V
SS
=
-
26 V). When
the amplifier is used in a SE configuration, a so-called `pumping effect' can occur. During
one switching interval, energy is taken from one supply (e.g. V
DD
), while a part of that
energy is delivered back to the other supply line (e.g. V
SS
) and visa versa. When the
voltage supply source cannot sink energy, the voltage across the output capacitors of that
voltage supply source will increase: the supply voltage is pumped to higher levels. The
voltage increase caused by the pumping effect depends on:
Speaker impedance
Supply voltage
Audio signal frequency
Value of decoupling capacitors on supply lines
Source and sink currents of other channels.
The pumping effect should not cause a malfunction of either the audio amplifier and/or the
voltage supply source. For instance, this malfunction can be caused by triggering of the
undervoltage or overvoltage protection or unbalance protection of the amplifier.
Best remedy for pumping effects is to use the TDA8922B in a mono full-bridge application
or in case of stereo half-bridge application adapt the power supply (e.g. increase supply
decoupling capacitors).
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Preliminary data sheet
Rev. 01 -- 1 October 2004
19 of 32
Philips Semiconductors
TDA8922B
2
50 W class-D power amplifier
13.8 Application schematic
Notes to the application schematic:
A solid ground plane around the switching amplifier is necessary to prevent emission.
100 nF capacitors must be placed as close as possible to the power supply pins of the
TDA8922BTH.
The internal heat spreader of the TDA8922BTH is internally connected to V
SS
.
The external heatsink must be connected to the ground plane.
Use a thermal conductive electrically non-conductive Sil-Pad
between the backside
of the TDA8922BTH and a small external heatsink.
The differential inputs enable the best system level audio performance with
unbalanced signal sources. In case of hum due to floating inputs, connect the
shielding or source ground to the amplifier ground. Jumpers J1 and J2 are open on
set level and are closed on the stand-alone demo board.
Minimum total required capacity per power supply line is 3300
F.
xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx
xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxx x x
xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxx
xxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxx xxx
9397 750 13357
K
oninklijk
e Philips Electronics N.V
. 2004. All r
ights reser
v
ed.
Preliminar
y data sheet
Re
v
.
01 -- 1 October 2004
20 of 32
Philips Semiconductor
s
TD
A8922B
2
50 W c
lass-D po
wer amplifier
Fig 9.
TDA8922BTH application diagram.
001aab198
C18
IN1P
IN1
IN2
IN1M
SGND1
FB GND
SGND2
8
9
11
2
5
4
3
1
C19
220 pF
C23
1 nF
C17
1 nF
C30
1 nF
C25
1 nF
R8
470 nF
5.6 k
R3
5.6 k
470 nF
5.6 k
C20
R10
C26
IN2P
IN2M
FB GND
FB GND
C28
220 pF
R11
470 nF
5.6 k
R13
10
R14
22
OUT2M
OUT2P
LS2
C32
100
nF
C9
100 nF
C31
FB
GND
470 nF
5.6 k
C29
100 nF
V
DDA
V
SSA
19
24
13
V
SSA
V
SSP
V
DDA2
V
SSA2
PROT
n.c.
20
21
22
V
SSP
V
SSP2
OUT2
BOOT2
23
V
DDP
V
DDP2
V
SSD
C34
100 nF
C35
FB GND
FB GND
100 nF
V
DDA
V
SSA
C12
100 nF
C13
V
DDA1
V
SSA1
100 nF
C37
15 nF
C27
L4
100 nF
C39
100 nF
C38
V
SSP
V
DDP
17
V
SSP1
14
U1
V
DDP1
6
MODE
7
12
10
OSC
100 nF
C14
100 nF
C16
100 nF
C15
47
F/
63 V
C8
100
F/10 V
C4
C3
470
F/35 V
C6
470
F/35 V
C33
220 pF
18
STABI
C36
100 nF
V
DDP
C40
220 pF
C10
220 pF
V
SSP
C41
220 pF
R12
TDA8922BTH
R2
10
R5
10
R7
10
R6
30 k
R9
22
R4
5.6 k
R1
5.6 k
DZ1
5V6
S2
C2
47
F/35 V
C5
47
F/35 V
C1
100 nF
1
C7
100 nF
S1
OUT1P
OUT1M
LS1
LS1/LS2
L3/L4
C22/C31
2
10
H
1
F
4
22
H
680 nF
6
33
H
470 nF
8
47
H
330 nF
C24
100
nF
C22
FB
GND
16
15
OUT1
BOOT1
15 nF
C21
L3
L1 BEAD
V
DD
CON1
GND
V
SS
+
25 V
-
25 V
L2 BEAD
V
DDP
V
SSA
ON/OFF
OPERATE/MUTE
V
DDP
V
DDA
V
DDP
V
SSP
V
SSA
V
SSP
SINGLE ENDED
OUTPUT FILTER VALUES
C11
220 pF
2
3
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Preliminary data sheet
Rev. 01 -- 1 October 2004
21 of 32
Philips Semiconductors
TDA8922B
2
50 W class-D power amplifier
13.9 Curves measured in reference design
V
P
=
26 V; 2
6
SE configuration.
(1) f = 6 kHz.
(2) f = 1 kHz.
(3) f = 100 Hz.
V
P
=
26 V; 2
8
SE configuration.
(1) f = 6 kHz.
(2) f = 1 kHz.
(3) f = 100 Hz.
Fig 10. (THD + N)/S as a function of output power; SE
configuration with 2
6
load.
Fig 11. (THD + N)/S as a function of output power; SE
configuration with 2
8
load.
V
P
=
21 V; 1
8
BTL configuration.
(1) f = 6 kHz.
(2) f = 1 kHz.
(3) f = 100 Hz.
V
P
=
26 V; 2
6
SE configuration.
(1) P
o
= 10 W.
(2) P
o
= 1 W.
Fig 12. (THD + N)/S as a function of output power; BTL
configuration with 8
load.
Fig 13. (THD + N)/S as function of frequency, SE
configuration with 2
6
load.
P
o
(W)
10
-
2
10
3
10
2
10
-
1
10
1
001aab199
(2)
(3)
(1)
10
-
1
10
-
2
10
1
10
2
(THD
+
N)/S
(%)
10
-
3
001aab200
10
-
1
10
-
2
10
1
10
2
10
-
3
P
o
(W)
10
2
10
10
-
1
10
-
2
1
(2)
(3)
(1)
(THD
+
N)/S
(%)
P
o
(W)
10
-
2
10
3
10
2
10
-
1
10
1
001aab201
10
-
1
10
-
2
10
1
10
2
10
-
3
(2)
(3)
(1)
(THD
+
N)/S
(%)
001aab202
10
-
1
10
-
2
10
1
10
2
10
-
3
f (Hz)
10
10
5
10
4
10
2
10
3
(1)
(2)
(THD
+
N)/S
(%)
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Preliminary data sheet
Rev. 01 -- 1 October 2004
22 of 32
Philips Semiconductors
TDA8922B
2
50 W class-D power amplifier
V
P
=
26 V; 2
8
SE configuration.
(1) P
o
= 10 W.
(2) P
o
= 1 W.
V
P
=
21 V; 1
8
BTL configuration.
(1) P
o
= 10 W.
(2) P
o
= 1 W.
Fig 14. (THD + N)/S as function of frequency, SE
configuration with 2
8
load.
Fig 15. (THD + N)/S as function of frequency, BTL
configuration with 8
load.
V
P
=
26 V; 2
6
SE configuration.
(1) P
o
= 10 W.
(2) P
o
= 1 W.
V
P
=
26 V; 2
8
SE configuration.
(1) P
o
= 10 W.
(2) P
o
= 1 W.
Fig 16. Channel separation as a function of frequency;
SE configuration with 2
6
load.
Fig 17. Channel separation as a function of frequency;
SE configuration with 2
8
load.
001aab203
10
-
1
10
-
2
10
1
10
2
10
-
3
f (Hz)
10
10
5
10
4
10
2
10
3
(1)
(2)
(THD
+
N)/S
(%)
001aab204
10
-
1
10
-
2
10
1
10
2
10
-
3
f (Hz)
10
10
5
10
4
10
2
10
3
(1)
(2)
(THD
+
N)/S
(%)
001aab205
-
60
-
40
-
80
-
20
0
cs
(dB)
-
100
f (Hz)
10
10
5
10
4
10
2
10
3
(1)
(2)
001aab206
-
60
-
40
-
80
-
20
0
cs
(dB)
-
100
f (Hz)
10
10
5
10
4
10
2
10
3
(1)
(2)
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Preliminary data sheet
Rev. 01 -- 1 October 2004
23 of 32
Philips Semiconductors
TDA8922B
2
50 W class-D power amplifier
f = 1 kHz.
(1) V
P
=
21 V; 1
8
BTL configuration.
(2) V
P
=
26 V; 2
6
SE configuration.
(3) V
P
=
26 V; 2
8
SE configuration.
f = 1 kHz.
(1) V
P
=
26 V; 2
8
SE configuration.
(2) V
P
=
26 V; 2
6
SE configuration.
(3) V
P
=
21 V; 1
8
BTL configuration.
Fig 18. Power dissipation as a function of total output
power.
Fig 19. Efficiency as a function of total output power.
(THD + N)/S = 0.5 %; f = 1 kHz.
(1) 1
8
BTL configuration.
(2) 2
6
SE configuration.
(3) 2
8
SE configuration.
(THD + N)/S = 10 %; f = 1 kHz.
(1) 1
8
BTL configuration.
(2) 2
6
SE configuration.
(3) 2
8
SE configuration.
Fig 20. Output power as a function of supply voltage;
(THD + N)/S = 0.5 %.
Fig 21. Output power as a function of supply voltage;
(THD + N)/S = 10 %.
001aab207
8
12
4
16
20
P
tot
(W)
0
P
o
(W)
10
-
2
10
3
10
2
10
-
1
10
1
(1)
(2)
(3)
P
o
(W)
0
200
160
80
120
40
001aab208
40
60
20
80
100
(%)
0
(1)
(2)
(3)
V
S
(V)
10
35
30
20
25
15
001aab209
40
80
120
P
o
(W)
0
(1)
(2)
(3)
V
S
(V)
10
35
30
20
25
15
001aab210
80
120
40
160
200
P
o
(W)
0
(1)
(2)
(3)
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Preliminary data sheet
Rev. 01 -- 1 October 2004
24 of 32
Philips Semiconductors
TDA8922B
2
50 W class-D power amplifier
V
i
= 100 mV; R
s
= 5.6 k
; C
i
= 330 pF.
(1) V
P
=
21 V; 1
8
BTL configuration.
(2) V
P
=
26 V; 2
6
SE configuration.
(3) V
P
=
26 V; 2
8
SE configuration.
V
i
= 100 mV; R
s
= 0
; C
i
= 330 pF.
(1) V
P
=
21 V; 1
8
BTL configuration.
(2) V
P
=
26 V; 2
6
SE configuration.
(3) V
P
=
26 V; 2
8
SE configuration.
Fig 22. Gain as a function of frequency; R
s
= 5.6 k
and C
i
= 330 pF.
Fig 23. Gain as a function of frequency; R
s
= 0
and
C
i
= 330 pF.
V
P
=
26 V; V
ripple
= 2 V (p-p).
(1) Both supply lines rippled.
(2) Both supply lines rippled in anti phase.
(3) One supply line rippled.
V
i
= 100 mV; f = 1 kHz.
Fig 24. SVRR as a function of frequency.
Fig 25. Output voltage as a function of mode voltage.
001aab211
30
35
25
40
45
G
(dB)
20
f (Hz)
10
10
5
10
4
10
2
10
3
(1)
(2)
(3)
001aab212
30
35
25
40
45
G
(dB)
20
f (Hz)
10
10
5
10
4
10
2
10
3
(1)
(2)
(3)
001aab213
-
60
-
40
-
80
-
20
0
SVRR
(dB)
-
100
f (Hz)
10
10
5
10
4
10
2
10
3
(1)
(2)
(3)
001aab214
V
o
(V)
10
-
3
10
-
5
10
-
4
1
10
-
1
10
-
2
10
10
-
6
V
mode
(V)
0
6
4
2
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Preliminary data sheet
Rev. 01 -- 1 October 2004
25 of 32
Philips Semiconductors
TDA8922B
2
50 W class-D power amplifier
14. Test information
14.1 Quality information
The
General Quality Specification for Integrated Circuits, SNW-FQ-611 is applicable.
V
P
=
26 V; R
s
= 5.6 k
; 20 kHz AES17 filter.
(1) 2
6
SE configuration and 2
8
SE configuration.
(2) 1
8
BTL configuration.
Fig 26. S/N ratio as a function of output power.
001aab215
40
80
120
S/N
(dB)
0
P
o
(W)
10
-
2
10
3
10
2
10
-
1
10
1
(1)
(2)
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Preliminary data sheet
Rev. 01 -- 1 October 2004
26 of 32
Philips Semiconductors
TDA8922B
2
50 W class-D power amplifier
15. Package outline
Fig 27. HSOP24 package outline.
UNIT
A4
(1)
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
03-02-18
03-07-23
IEC
JEDEC
JEITA
mm
+
0.08
-
0.04
3.5
0.35
DIMENSIONS (mm are the original dimensions)
Notes
1. Limits per individual lead.
2. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
SOT566-3
0
5
10 mm
scale
HSOP24: plastic, heatsink small outline package; 24 leads; low stand-off height
SOT566-3
A
max.
detail X
A2
3.5
3.2
D2
1.1
0.9
HE
14.5
13.9
Lp
1.1
0.8
Q
1.7
1.5
2.7
2.2
v
0.25
w
0.25
y
Z
8
0
0.07
x
0.03
D1
13.0
12.6
E1
6.2
5.8
E2
2.9
2.5
bp
c
0.32
0.23
e
1
D
(2)
16.0
15.8
E
(2)
11.1
10.9
0.53
0.40
A3
A4
A2
(A3)
Lp
A
Q
D
y
x
HE
E
c
v
M
A
X
A
bp
w
M
Z
D1
D2
E2
E1
e
24
13
1
12
pin 1 index
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Preliminary data sheet
Rev. 01 -- 1 October 2004
27 of 32
Philips Semiconductors
TDA8922B
2
50 W class-D power amplifier
Fig 28. DBS23P package outline.
UNIT A
2
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
mm
4.6
4.3
A
4
1.15
0.85
A
5
1.65
1.35
DIMENSIONS (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
SOT411-1
98-02-20
02-04-24
0
5
10 mm
scale
D
L
L
1
L
2
E
2
E
c
A
4
A
5
A
2
m
L
3
E
1
Q
w
M
b
p
1
d
Z
e
2
e
e
1
23
j
DBS23P: plastic DIL-bent-SIL power package; 23 leads (straight lead length 3.2 mm)
SOT411-1
v
M
D
x
h
Eh
non-concave
view B: mounting base side
B
e
1
b
p
c
D
(1)
E
(1)
Z
(1)
d
e
D
h
L
L
3
m
0.75
0.60
0.55
0.35
30.4
29.9
28.0
27.5
12
2.54
12.2
11.8
10.15
9.85
1.27
e
2
5.08
2.4
1.6
E
h
6
E
1
14
13
L
1
10.7
9.9
L
2
6.2
5.8
E
2
1.43
0.78
2.1
1.8
1.85
1.65
4.3
3.6
2.8
Q
j
0.25
w
0.6
v
0.03
x
45
9397 750 13357
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Preliminary data sheet
Rev. 01 -- 1 October 2004
28 of 32
Philips Semiconductors
TDA8922B
2
50 W class-D power amplifier
16. Soldering
16.1 Introduction
This text gives a very brief insight to a complex technology. A more in-depth account of
soldering ICs can be found in our
Data Handbook IC26; Integrated Circuit Packages
(document order number 9398 652 90011).
There is no soldering method that is ideal for all IC packages. Wave soldering is often
preferred when through-hole and surface mount components are mixed on one
printed-circuit board. Wave soldering can still be used for certain surface mount ICs, but it
is not suitable for fine pitch SMDs. In these situations reflow soldering is recommended.
Driven by legislation and environmental forces the worldwide use of lead-free solder
pastes is increasing.
16.2 Through-hole mount packages
16.2.1 Soldering by dipping or by solder wave
Typical dwell time of the leads in the wave ranges from 3 seconds to 4 seconds at 250
C
or 265
C, depending on solder material applied, SnPb or Pb-free respectively.
The total contact time of successive solder waves must not exceed 5 seconds.
The device may be mounted up to the seating plane, but the temperature of the plastic
body must not exceed the specified maximum storage temperature (T
stg(max)
). If the
printed-circuit board has been pre-heated, forced cooling may be necessary immediately
after soldering to keep the temperature within the permissible limit.
16.2.2 Manual soldering
Apply the soldering iron (24 V or less) to the lead(s) of the package, either below the
seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is
less than 300
C it may remain in contact for up to 10 seconds. If the bit temperature is
between 300
C and 400
C, contact may be up to 5 seconds.
16.3 Surface mount packages
16.3.1 Reflow soldering
Reflow soldering requires solder paste (a suspension of fine solder particles, flux and
binding agent) to be applied to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
Several methods exist for reflowing; for example, convection or convection/infrared
heating in a conveyor type oven. Throughput times (preheating, soldering and cooling)
vary between 100 seconds and 200 seconds depending on heating method.
Typical reflow peak temperatures range from 215
C to 270
C depending on solder paste
material. The top-surface temperature of the packages should preferably be kept:
below 225
C (SnPb process) or below 245
C (Pb-free process)
for all BGA, HTSSON..T and SSOP..T packages
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Preliminary data sheet
Rev. 01 -- 1 October 2004
29 of 32
Philips Semiconductors
TDA8922B
2
50 W class-D power amplifier
for packages with a thickness
2.5 mm
for packages with a thickness < 2.5 mm and a volume
350 mm
3
so called
thick/large packages.
below 240
C (SnPb process) or below 260
C (Pb-free process) for packages with a
thickness < 2.5 mm and a volume < 350 mm
3
so called small/thin packages.
Moisture sensitivity precautions, as indicated on packing, must be respected at all times.
16.3.2 Wave soldering
Conventional single wave soldering is not recommended for surface mount devices
(SMDs) or printed-circuit boards with a high component density, as solder bridging and
non-wetting can present major problems.
To overcome these problems the double-wave soldering method was specifically
developed.
If wave soldering is used the following conditions must be observed for optimal results:
Use a double-wave soldering method comprising a turbulent wave with high upward
pressure followed by a smooth laminar wave.
For packages with leads on two sides and a pitch (e):
larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be
parallel to the transport direction of the printed-circuit board;
smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the
transport direction of the printed-circuit board.
The footprint must incorporate solder thieves at the downstream end.
For packages with leads on four sides, the footprint must be placed at a 45
angle to
the transport direction of the printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
During placement and before soldering, the package must be fixed with a droplet of
adhesive. The adhesive can be applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the adhesive is cured.
Typical dwell time of the leads in the wave ranges from 3 seconds to 4 seconds at 250
C
or 265
C, depending on solder material applied, SnPb or Pb-free respectively.
A mildly-activated flux will eliminate the need for removal of corrosive residues in most
applications.
16.3.3 Manual soldering
Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage
(24 V or less) soldering iron applied to the flat part of the lead. Contact time must be
limited to 10 seconds at up to 300
C.
When using a dedicated tool, all other leads can be soldered in one operation within
2 seconds to 5 seconds between 270
C and 320
C.
9397 750 13357
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Preliminary data sheet
Rev. 01 -- 1 October 2004
30 of 32
Philips Semiconductors
TDA8922B
2
50 W class-D power amplifier
16.4 Package related soldering information
[1]
For more detailed information on the BGA packages refer to the
(LF)BGA Application Note (AN01026); order a copy from your Philips
Semiconductors sales office.
[2]
All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with
respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of
the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the
Data Handbook IC26; Integrated
Circuit Packages; Section: Packing Methods.
[3]
For SDIP packages, the longitudinal axis must be parallel to the transport direction of the printed-circuit board.
[4]
Hot bar soldering or manual soldering is suitable for PMFP packages.
[5]
These transparent plastic packages are extremely sensitive to reflow soldering conditions and must on no account be processed
through more than one soldering cycle or subjected to infrared reflow soldering with peak temperature exceeding 217
C
10
C
measured in the atmosphere of the reflow oven. The package body peak temperature must be kept as low as possible.
[6]
These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder cannot penetrate
between the printed-circuit board and the heatsink. On versions with the heatsink on the top side, the solder might be deposited on the
heatsink surface.
[7]
If wave soldering is considered, then the package must be placed at a 45
angle to the solder wave direction. The package footprint
must incorporate solder thieves downstream and at the side corners.
[8]
Wave soldering is suitable for LQFP, QFP and TQFP packages with a pitch (e) larger than 0.8 mm; it is definitely not suitable for
packages with a pitch (e) equal to or smaller than 0.65 mm.
[9]
Wave soldering is suitable for SSOP, TSSOP, VSO and VSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely
not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
[10] Image sensor packages in principle should not be soldered. They are mounted in sockets or delivered pre-mounted on flex foil.
However, the image sensor package can be mounted by the client on a flex foil by using a hot bar soldering process. The appropriate
soldering profile can be provided on request.
17. Revision history
Table 11:
Suitability of IC packages for wave, reflow and dipping soldering methods
Mounting
Package
[1]
Soldering method
Wave
Reflow
[2]
Dipping
Through-hole mount
CPGA, HCPGA
suitable
-
-
DBS, DIP, HDIP, RDBS, SDIP, SIL
suitable
[3]
-
suitable
Through-hole-surface
mount
PMFP
[4]
not suitable
not suitable
-
Surface mount
BGA, HTSSON..T
[5]
, LBGA,
LFBGA, SQFP, SSOP..T
[5]
,
TFBGA, VFBGA, XSON
not suitable
suitable
-
DHVQFN, HBCC, HBGA, HLQFP,
HSO, HSOP, HSQFP, HSSON,
HTQFP, HTSSOP, HVQFN,
HVSON, SMS
not suitable
[6]
suitable
-
PLCC
[7]
, SO, SOJ
suitable
suitable
-
LQFP, QFP, TQFP
not recommended
[7] [8]
suitable
-
SSOP, TSSOP, VSO, VSSOP
not recommended
[9]
suitable
-
CWQCCN..L
[10]
, WQCCN..L
[10]
not suitable
not suitable
-
Table 12:
Revision history
Document ID
Release date
Data sheet status
Change notice
Order number
Supersedes
TDA8922B_1
20041001
Preliminary data sheet
-
9397 750 13357
-
Philips Semiconductors
TDA8922B
2
50 W class-D power amplifier
9397 750 13357
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Preliminary data sheet
Rev. 01 -- 1 October 2004
31 of 32
18. Data sheet status
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
[2]
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
19. Definitions
Short-form specification -- The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition -- Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information -- Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
20. Disclaimers
Life support -- These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes -- Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status `Production'),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
21. Trademarks
Sil-Pad --
is a registered trademark of The Bergquist
Company.
22. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
Level
Data sheet status
[1]
Product status
[2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 1 October 2004
Document order number: 9397 750 13357
Published in The Netherlands
Philips Semiconductors
TDA8922B
2
50 W class-D power amplifier
23. Contents
1
General description . . . . . . . . . . . . . . . . . . . . . . 1
2
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
3
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
4
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
5
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
6
Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3
7
Pinning information . . . . . . . . . . . . . . . . . . . . . . 4
7.1
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
7.2
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 4
8
Functional description . . . . . . . . . . . . . . . . . . . 5
8.1
General . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
8.2
Pulse width modulation frequency . . . . . . . . . . 8
8.3
Protections . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
8.3.1
OverTemperature Protection (OTP) . . . . . . . . . 8
8.3.2
OverCurrent Protection (OCP) . . . . . . . . . . . . . 8
8.3.3
Window Protection (WP). . . . . . . . . . . . . . . . . . 9
8.3.4
Supply voltage protections . . . . . . . . . . . . . . . . 9
8.4
Differential audio inputs . . . . . . . . . . . . . . . . . 10
9
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . 11
10
Thermal characteristics. . . . . . . . . . . . . . . . . . 11
11
Static characteristics. . . . . . . . . . . . . . . . . . . . 11
12
Dynamic characteristics . . . . . . . . . . . . . . . . . 13
12.1
Switching characteristics . . . . . . . . . . . . . . . . 13
12.2
Stereo and dual SE application . . . . . . . . . . . 13
12.3
Mono BTL application . . . . . . . . . . . . . . . . . . . 14
13
Application information. . . . . . . . . . . . . . . . . . 15
13.1
BTL application . . . . . . . . . . . . . . . . . . . . . . . . 15
13.2
MODE pin . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
13.3
Output power estimation . . . . . . . . . . . . . . . . . 15
13.4
External clock . . . . . . . . . . . . . . . . . . . . . . . . . 16
13.5
Heatsink requirements . . . . . . . . . . . . . . . . . . 17
13.6
Output current limiting. . . . . . . . . . . . . . . . . . . 17
13.7
Pumping effects . . . . . . . . . . . . . . . . . . . . . . . 18
13.8
Application schematic . . . . . . . . . . . . . . . . . . . 19
13.9
Curves measured in reference design . . . . . . 21
14
Test information . . . . . . . . . . . . . . . . . . . . . . . . 25
14.1
Quality information . . . . . . . . . . . . . . . . . . . . . 25
15
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 26
16
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
16.1
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . 28
16.2
Through-hole mount packages . . . . . . . . . . . . 28
16.2.1
Soldering by dipping or by solder wave . . . . . 28
16.2.2
Manual soldering . . . . . . . . . . . . . . . . . . . . . . 28
16.3
Surface mount packages . . . . . . . . . . . . . . . . 28
16.3.1
Reflow soldering . . . . . . . . . . . . . . . . . . . . . . . 28
16.3.2
Wave soldering. . . . . . . . . . . . . . . . . . . . . . . . 29
16.3.3
Manual soldering . . . . . . . . . . . . . . . . . . . . . . 29
16.4
Package related soldering information . . . . . . 30
17
Revision history . . . . . . . . . . . . . . . . . . . . . . . 30
18
Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 31
19
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
20
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
21
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
22
Contact information . . . . . . . . . . . . . . . . . . . . 31