UV ENHANCED PIN PHOTODIODES
SPECIFICATIONS
Responsivity:
0.10 A/W min., 0.18 A/W typ. @ 365nm
Part Number
Total
Area
Active
Area
Shunt
Resistance
1
Dark Current
1
at 5V
Breakdown
Voltage
2
at 10A
Capacitance
3
Typ.
NEP
4
Max
Linear
Current
5
Response
Time
6
at 5V
Min.
Typ.
Max.
Typ.
at 0V
at 5V
Typ.
Typ.
Typ.
(mm
2
) (in) (M
)
(nA) (nA) (V) (pF) (pF) (W/
Hz)
(mA) (ns)
SD 172-13-23-222
15
0.185
x
0.125
105
4.4
19
10
255
75
7.2x10
-14
1.5
30
SD 200-13-23-242
20.3
0.200
(dia).
77 6.0
30 10 345
102
8.9x10
-14
2.03 45
SD 290-13-23-242
42.6
0.300
x
0.220
36
12.5
50
10
723
215
1.3x10
-13
4.86
70
SD 445-13-23-305
100
0.394
x
0.394
15 30
120 10 1700
500
1.9x10
-13
10.0 200
* All values at 23C
1. Dark Current and Shunt Resistance vary with temperature as follows; for T23
C, I
DT
= I
D23
* 1.09
T
,
R
SHT
= R
SH23
* 0.9
T
, where
T=(T-23) and I
D23
and R
SH23
are values at 23
C.
2. Typical values listed. Minimum value shall be 50% of typical.
3. Typical values listed. Maximum value shall be 20% higher than the typical.
4. Test conditions are V
B
= -10mV, and 365 nm.
5. In photovoltaic mode. Maximum linear current specifies the level at which the output current characteristic deviates more than 10% from the
straight line. The short circuit current saturates at approximately 10 times this level.
6. Response Time (transition time between 10% and 90% of the output signal amplitude) measured at 670 nm with a 50
load. Shorter
wavelengths will result in faster rise and fall times.
Storage and Operating Temperature Range for all photodiodes is -40
C to 110C, except for the SD
445-13-23-305, which is
20
C to 75C.
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