BULD25D, BULD25DR, BULD25SL
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
P R O D U C T I N F O R M A T I O N
1
JULY 1994 - REVISED SEPTEMBER 1997
Copyright 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
q
Designed Specifically for High Frequency
Electronic Ballasts
q
Integrated Fast t
rr
Anti-parallel Diode,
Enhancing Reliability
q
Diode t
rr
Typically 500 ns
q
New Ultra Low-Height SOIC Power Package
q
Tightly Controlled Transistor Storage Times
q
Voltage Matched Integrated Transistor and
Diode
q
Characteristics Optimised for Cool Running
q
Diode-Transistor Charge Coupling
Minimised to Enhance Frequency Stability
q
Custom Switching Selections Available
q
Surface Mount and Through-Hole Options
description
The new BULDxx range of transistors have been
designed specifically for use in High Frequency
Electronic Ballasts (HFEB's). This range of
switching transistors has tightly controlled
PACKAGE
PART # SUFFIX
Small-outline
D
Small-outline taped
and reeled
DR
Single-in-line
SL
storage times and an integrated fast t
rr
anti-parallel diode. The revolutionary design ensures that the diode
has both fast forward and reverse recovery times, achieving the same performance as a discrete anti-parallel
diode plus transistor.
The integrated diode has minimal charge coupling with the transistor, increasing frequency stability,
especially in lower power circuits where the circulating currents are low. By design, this new device offers a
voltage matched integrated transistor and anti-parallel diode.
This device is available in the now well established 8 pin low height surface mount D package, and the TO-
220 pin compatible SL package. Use of the SL package allows for a 40% height saving, making it ideal for
compact ballast applications.
absolute maximum ratings at 25C ambient temperature (unless otherwise noted)
RATING
SYMBOL
VALUE
UNIT
Collector-emitter voltage (V
BE
= 0)
V
CES
600
V
Collector-base voltage (I
E
= 0)
V
CBO
600
V
Collector-emitter voltage (I
B
= 0)
V
CEO
400
V
Emitter-base voltage
V
EBO
9
V
B
C
E
D PACKAGE
(TOP VIEW)
1
2
3
4
5
6
7
8
C
C
C
C
NC
B
E
NC
NC - No internal connection
1
2
3
B
C
E
SL PACKAGE
(TOP VIEW)
device symbol
BULD25D, BULD25DR, BULD25SL
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
2
JULY 1994 - REVISED SEPTEMBER 1997
P R O D U C T I N F O R M A T I O N
NOTES: 1. This value applies for t
p
=
1 s.
2. This value applies for t
p
=
10 ms, duty cycle
2%.
NOTES: 3. These parameters must be measured using pulse techniques, t
p
= 300 s, duty cycle
2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts, and located
within 1 mm from the device body for the D package and 3.2 mm from the device body for the SL package.
NOTE
5: Refer to Figures 12, 13 and 14 for Functional Test Circuit and Switching Waveforms.
Continuous collector current (see Note 1)
I
C
2
A
Peak collector current (see Note 2)
I
CM
4
A
Continuous base current (see Note 1)
I
B
1.5
A
Peak base current (see Note 2)
I
BM
2.5
A
Continuous device dissipation at (or below) 25C ambient temperature
BULD25D
BULD25SL
P
tot
see Figure 10
see Figure 11
W
Maximum average continuous diode forward current at (or below) 25C ambient temperature
I
E(av)
0.5
A
Operating junction temperature range
T
j
-65 to +150
C
Storage temperature range
T
stg
-65 to +150
C
electrical characteristics at 25C ambient temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
V
CEO(sus)
Collector-emitter
sustaining voltage
I
C
= 0.1 A
400
V
I
CES
Collector-emitter
cut-off current
V
CE
= 600 V
V
BE
= 0
10
A
I
EBO
Emitter cut-off
current
V
EB
= 9 V
I
C
= 0
1
mA
V
BE(sat)
Base-emitter
saturation voltage
I
B
= 0.1 A
I
C
= 0.5 A
(see Notes 3 and 4)
0.9
1.1
V
V
CE(sat)
Collector-emitter
saturation voltage
I
B
= 0.1 A
I
B
= 0.2 A
I
C
= 0.5 A
I
C
= 1 A
(see Notes 3 and 4)
0.3
0.6
0.5
1
V
h
FE
Forward current
transfer ratio
V
CE
= 10 V
V
CE
= 1.5 V
V
CE
= 5 V
I
C
= 0.01 A
I
C
= 0.5 A
I
C
= 1 A
(see Notes 3 and 4)
10
10
10
18
15
15
20
20
V
EC
Anti-parallel diode
forward voltage
I
E
= 1 A
(see Notes 3 and 4)
1.5
1.7
V
thermal characteristics
PARAMETER
MIN
TYP
MAX
UNIT
R
JA
Junction to free air thermal resistance
D package
SL Package
165
115
C/W
switching characteristics at 25C ambient temperature
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
t
rr
Anti-parallel diode
reverse recovery time
Measured by holding transistor
in an off condition, V
EB
= -3 V
(see Note 5)
0.5
1
s
t
s
Storage time
(see Note 5)
2
3.5
5
s
t
f
Fall time
(see Note 5)
0.25
0.35
s
absolute maximum ratings at 25C ambient temperature (unless otherwise noted) (continued)
RATING
SYMBOL
VALUE
UNIT
3
JULY 1994 - REVISED SEPTEMBER 1997
BULD25D, BULD25DR, BULD25SL
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
P R O D U C T I N F O R M A T I O N
TYPICAL CHARACTERISTICS
Figure 1.
Figure 2.
Figure 3.
FORWARD CURRENT TRANSFER RATIO
vs
COLLECTOR CURRENT
I
C
- Collector Current - A
001
01
10
10
h
FE
- Forward Current Transfer Ratio
30
10
10
LDX25SHF
T
A
= 25C
V
CE
= 1.5 V
V
CE
= 5 V
V
CE
= 10 V
ANTI-PARALLEL DIODE
INSTANTANEOUS FORWARD CURRENT
vs
INSTANTANEOUS FORWARD VOLTAGE
V
EC
- Instantaneous Forward Voltage - V
0
05
10
15
20
25
30
I
E
- Instantaneous Forward Current - A
001
01
10
10
LDX25DVF
T
A
= 25C
BASE-EMITTER SATURATION VOLTAGE
vs
AMBIENT TEMPERATURE
T
A
- Ambient Temperature - C
-50
-25
0
25
50
75
100
125
150
V
BE(sat)
- Base-Emitter Saturation Voltage - V
0.6
0.7
0.8
0.9
1.0
LDX25SVB
I
C
= 0.5 A
I
B
= 0.1 A
BULD25D, BULD25DR, BULD25SL
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
4
JULY 1994 - REVISED SEPTEMBER 1997
P R O D U C T I N F O R M A T I O N
MAXIMUM SAFE OPERATING REGIONS
Figure 4.
Figure 5.
Figure 6.
Figure 7.
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
V
CE
- Collector-Emitter Voltage - V
10
10
100
1000
I
C
- Collector Current - A
001
01
10
10
LDX25DFB
t
p
= 100 s
t
p
= 10 ms
t
p
= 1 s
BULD25D
T
A
= 25C
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
V
CE
- Collector-Emitter Voltage - V
10
10
100
1000
I
C
- Collector Current - A
001
01
10
10
LDX25SFB
t
p
= 100 s
t
p
= 10 ms
t
p
= 1 s
BULD25SL
T
A
= 25C
MAXIMUM REVERSE-BIAS
SAFE OPERATING AREA
V
CE
- Collector-Emitter Voltage - V
0
100
200
300
400
500
600
700
800
I
C
- Collector Current - A
0
1
2
3
4
5
LDX25DRB
BULD25D
I
B(on)
= I
C
/ 5
V
BE(off)
= -5 V
T
A
= 25C
MAXIMUM REVERSE-BIAS
SAFE OPERATING AREA
V
CE
- Collector-Emitter Voltage - V
0
100
200
300
400
500
600
700
800
I
C
- Collector Current - A
0
1
2
3
4
5
LDX25SRB
BULD25SL
I
B(on)
= I
C
/ 5
V
BE(off)
= -5 V
T
A
= 25C
5
JULY 1994 - REVISED SEPTEMBER 1997
BULD25D, BULD25DR, BULD25SL
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE
P R O D U C T I N F O R M A T I O N
THERMAL INFORMATION
Figure 8.
Figure 9.
THERMAL RESPONSE JUNCTION TO AMBIENT
vs
POWER PULSE DURATION
t1 - Power Pulse Duration - s
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
Z
JA
/R
JA
- Normalised Transient Thermal Impedance
0001
001
01
10
LDX25DZA
40%
60%
20%
10%
0%
BULD25D
T
A
= 25C
T
J max
(
)
T
A
P
D peak
(
)
Z
J A
R
J A
R
JA max
(
)
=
t1
t2
duty cycle = t1/t2
Read time at end of t1,
THERMAL RESPONSE JUNCTION TO AMBIENT
vs
POWER PULSE DURATION
t1 - Power Pulse Duration - s
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
Z
JA
/R
JA
- Normalised Transient Thermal Impedance
0001
001
01
10
LDX25SZA
40%
60%
20%
10%
0%
BULD25SL
T
A
= 25C
T
J max
(
)
T
A
P
D peak
(
)
Z
J A
R
J A
R
JA max
(
)
=
t1
t2
duty cycle = t1/t2
Read time at end of t1,
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